NST3906DXV6T1, NST3906DXV6T5. Dual General Purpose Transistor

Transcription

1 NST396DXV6T1, NST396DXV6T5 Dual General Purpose Transistor The NST396DXV6T1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT 563 sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium. (3) (2) (1) h FE, 3 Low V CE(sat),.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count LeadFree Solder Plating MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4 Vdc Emitter Base Voltage V EBO 5. Vdc Collector Current Continuous I C 2 madc Electrostatic Discharge ESD HBM>16, MM>2 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25 C Derate above 25 C Thermal Resistance JunctiontoAmbient P D R JA 35 V mw mw/ C C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = 25 C Derate above 25 C Thermal Resistance JunctiontoAmbient P D 5 4. R JA 25 mw mw/ C C/W Q 1 (4) (5) (6) NST396DXV6T SOT563 CASE 463A PLASTIC MARKING DIAGRAM A2 D A2 = Specific Device Code D = Date Code ORDERING INFORMATION Q 2 Device Package Shipping NST396DXV6T1 SOT563 4 mm pitch 4/Tape & Reel NST396DXV6T5 SOT563 2 mm pitch 8/Tape & Reel Junction and Storage Temperature Range T J, T stg 55 to +15 C 1. Minimum Pad Semiconductor Components Industries, LLC, 23 March, 23 Rev. 1 Publication Order Number: NST396DXV6T1/D

2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 2) V (BR)CEO 4 Vdc Collector Base Breakdown Voltage V (BR)CBO 4 Vdc Emitter Base Breakdown Voltage V (BR)EBO 5. Vdc Base Cutoff Current I BL 5 nadc Collector Cutoff Current I CEX 5 nadc ON CHARACTERISTICS (Note 2) DC Current Gain (I C =.1 madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = madc, V CE = Vdc) (I C = 5 madc, V CE = Vdc) (I C = madc, V CE = Vdc) Collector Emitter Saturation Voltage (I C = madc, I B = madc) (I C = 5 madc, I B = 5. madc) Base Emitter Saturation Voltage (I C = madc, I B = madc) (I C = 5 madc, I B = 5. madc) SMALL SIGNAL CHARACTERISTICS h FE V CE(sat) V BE(sat).65 Current Gain Bandwidth Product f T 25 MHz Output Capacitance C obo 4.5 pf Input Capacitance C ibo. pf Input Impedance (V CE = Vdc, I C = madc, f = khz) Voltage Feedback Ratio (V CE = Vdc, I C = madc, f = khz) Vdc Vdc h ie k Ω h re.1 X 4 Small Signal Current Gain (V CE = Vdc, I C = madc, f = khz) Output Admittance (V CE = Vdc, I C = madc, f = khz) Noise Figure (V CE = 5. Vdc, I C = Adc, R S = k Ω, f = khz) h fe 4 h oe 3. 6 mhos NF 4. db SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc, V BE =.5 Vdc) t d 35 Rise Time (I C = madc, I B1 = madc) t r 35 Storage Time (V CC = 3. Vdc, I C = madc) t s 225 Fall Time (I B1 = I B2 = madc) t f Pulse Test: Pulse Width 3 µs; Duty Cycle 2.%. ns ns 2

3 f NST396DXV6T1, NST396DXV6T5 +.5 V < 1 ns k 3 V V < 1 ns k 3 V V 3 ns DUTY CYCLE = 2% C s < 4 pf* < t 1 < 5 s DUTY CYCLE = 2% t 1.9 V 1N916 C s < 4 pf* * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 7. CAPACITANCE (pf) C obo C ibo REVERSE BIAS (VOLTS) Figure 3. Capacitance T J = 25 C T J = 125 C TIME (ns) V 7 t V OB = V Figure 4. Turn On Time I C /I B = t V CC = 3. V 15 V 4 V t, FALL TIME (ns) I C /I B = I C /I B = Figure 5. Fall Time V CC = 4 V I B1 = I B2 3

4 NF, NOISE FIGURE (db) SOURCE RESISTANCE = 2 I C = ma TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE = 5. Vdc, T A = 25 C, Bandwidth = Hz) SOURCE RESISTANCE = 2 I C =.5 ma SOURCE RESISTANCE = 2. k I C = A SOURCE RESISTANCE = 2. k I C = 5 A NF, NOISE FIGURE (db) f = khz I C = ma I C =.5 ma I C = 5 A I C = A f, FREQUENCY (khz) R g, SOURCE RESISTANCE (k OHMS) Figure 6. Figure 7. 3 h PARAMETERS (V CE = Vdc, f = khz, T A = 25 C) h fe, DC CURRENT GAIN h oe, OUTPUT ADMITTANCE ( mhos) Figure 8. Current Gain Figure 9. Output Admittance h ie, INPUT IMPEDANCE (k OHMS) h re, VOLTAGE FEEDBACK RATIO (x 4 ) Figure. Input Impedance Figure 11. Voltage Feedback Ratio 4

5 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS T J = +125 C +25 C 55 C V CE = V Figure 12. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS).8 I C = ma T J = 25 C ma 3 ma ma I B, BASE CURRENT (ma) Figure 13. Collector Saturation Region V, VOLTAGE (VOLTS) T J = 25 C V I C /I B = V I C /I B = V V CE = V, TEMPERATURE COEFFICIENTS (mv/ C) VC FOR V CE(sat) VB FOR V BE(sat) +25 C TO +125 C 55 C TO +25 C +25 C TO +125 C 55 C TO +25 C V Figure 14. ON Voltages Figure 15. Temperature Coefficients 5

6 INFORMATION FOR USING THE SOT563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process Dimensions in mm SOT563 SOT563 POWER DISSIPATION The power dissipation of the SOT563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θja, the thermal resistance from the device junction to ambient, and the operating temperature, T A. Using the values provided on the data sheet for the SOT563 package, P D can be calculated as follows: P D = T J(max) T A R θja The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature T A of 25 C, one can calculate the power dissipation of the device which in this case is 15 milliwatts. P D = 15 C 25 C 833 C/W = 15 milliwatts The 833 C/W for the SOT563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 15 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of C. The soldering temperature and time shall not exceed 26 C for more than seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5 C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device 6

7 PACKAGE DIMENSIONS SOT563, 6 LEAD CASE 463A1 ISSUE O A X C K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL G B Y D 65 PL.8 (.3) M X Y S J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.5 BSC.2 BSC J K S STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 2: PIN 1. EMITTER 1 2. EMITTER2 3. BASE 2 4. COLLECTOR 2 5. BASE 1 6. COLLECTOR 1 STYLE 3: PIN 1. CATHODE 1 2. CATHODE 1 3. ANODE/ANODE 2 4. CATHODE 2 5. CATHODE 2 6. ANODE/ANODE 1 STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR 7

8 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 NST396DXV6T1/D