MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
|
|
- Joella Geraldine Norman
- 6 years ago
- Views:
Transcription
1 MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Features Designed for W Audio Frequency Gain Complementary: Gain Linearity from ma to 7 A h FE = 45 I C = 8 A Low Harmonic Distortion High Safe Operation Area 1 A/ 1 Second High f T 3 MHz Typical PbFree Packages are Available* MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage V CEO 23 Vdc CollectorBase Voltage V CBO 23 Vdc EmitterBase Voltage V EBO 5. Vdc CollectorEmitter Voltage 1.5 V V CEX 23 Vdc Collector Current Continuous Collector Current Peak (Note 1) I C Adc Base Current Continuous I B 1.5 Adc Total Power T C = 25 C Derate Above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D W W/ C T J, T stg 65 to +1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.625 C/W Thermal Resistance, JunctiontoAmbient R JA 4 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < %. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 23 VOLTS 2 WATTS 1 2 ORDERING INFORMATION Device Package Shipping MJW3281A MJW3281AG 3 TO247 TO247 CASE 34L MARKING DIAGRAM MJWxxxxA AYWWG 1 BASE 3 EMITTER 2 COLLECTOR xxxx = 3281 or 132 A = Assembly Location Y = Year WW = Work Week G = PbFree Package 3 Units/Rail MJW132A TO247 3 Units/Rail MJW132AG TO247 (PbFree) TO247 (PbFree) 3 Units/Rail 3 Units/Rail Semiconductor Components Industries, LLC, 2 March, 2 Rev. 4 1 Publication Order Number: MJW3281A/D
2 MJW3281A (NPN) MJW132A (PNP) ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = ) Collector Cutoff Current (V CB = 23 Vdc, I E = ) Emitter Cutoff Current (V EB = 5 Vdc, I C = ) V CEO(sus) 23 I CBO I EBO 5 Vdc Adc Adc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (V CE = Vdc, t = 1 s (nonrepetitive) (V CE = Vdc, t = 1 s (nonrepetitive) I S/b 4 1 Adc ON CHARACTERISTICS DC Current Gain (I C = madc, V CE = 5 Vdc) (I C = 1 Adc, V CE = 5 Vdc) (I C = 3 Adc, V CE = 5 Vdc) (I C = 5 Adc, V CE = 5 Vdc) (I C = 7 Adc, V CE = 5 Vdc) (I C = 8 Adc, V CE = 5 Vdc) (I C = 15 Adc, V CE = 5 Vdc) CollectorEmitter Saturation Voltage (I C = Adc, I B = 1 Adc) BaseEmitter On Voltage (I C = 8 Adc, V CE = 5 Vdc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 Adc, V CE = 5 Vdc, ) Output Capacitance (V CB = Vdc, I E =, ) h FE V CE(sat).4 2 V BE(on) 2 f T 3 C ob 6 Vdc Vdc MHz pf 2
3 MJW3281A (NPN) MJW132A (PNP) TYPICAL CHARACTERISTICS f, T CURRENT BANDWIDTH PRODUCT (MHz) V Figure 1. Typical Current Gain Bandwidth Product V CE = V f, T CURRENT BANDWIDTH PRODUCT (MHz) V Figure 2. Typical Current Gain Bandwidth Product V CE = V T J = C 25 C 25 C T J = C V CE = 2 V Figure 3. DC Current Gain, V CE = 2 V V CE = 2 V Figure 4. DC Current Gain, V CE = 2 V T J = C 25 C 25 C T J = C V CE = 5 V Figure 5. DC Current Gain, V CE = 5 V V CE = 5 V Figure 6. DC Current Gain, V CE = 5 V 3
4 MJW3281A (NPN) MJW132A (PNP) TYPICAL CHARACTERISTICS I C, COLLECTOR CURRENT (A) A I B = 2 A A.5 A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics I C, COLLECTOR CURRENT (A) A I B = 2 A A.5 A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics SATURATION VOLTAGE (VOLTS) I C /I B = V BE(sat) V CE(sat) SATURATION VOLTAGE (VOLTS) I C /I B = V BE(sat) V CE(sat) Figure 9. Typical Saturation Voltages Figure. Typical Saturation Voltages V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) Figure 11. Typical BaseEmitter Voltage V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) Figure 12. Typical BaseEmitter Voltage 4
5 MJW3281A (NPN) MJW132A (PNP) 1 Sec msec msec 1 Sec msec msec V CE, COLLECTOR EMITTER (VOLTS) V CE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 14. Active Region Safe Operating Area The data of Figures 13 and 14 is based on T J(pk) = 1 C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS C ib C ib C, CAPACITANCE (pf) C ob C, CAPACITANCE (pf) C ob V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 15. MJW132A Typical Capacitance Figure 16. MJW3281A Typical Capacitance 5
6 MJW3281A (NPN) MJW132A (PNP) PACKAGE DIMENSIONS TO247 CASE 34L2 ISSUE E N A K F 2 PL B U L P Y W J G D 3 PL C T E H 4 Q.63 (.25) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC.215 BSC H J K L N P Q U 6.15 BSC.242 BSC W (.) M Y Q S PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MJW3281A/D
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
More informationMJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
More informationNJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
More informationMJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
More information2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
More informationMJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC
More informationMJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
More informationMJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
More informationAdc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
More information2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS
2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features Forward Biased
More information2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
More information2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W
N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
More informationTIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
More informationMJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
More informationNJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
More information2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS
, Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree
More informationMJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
More information2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
More informationNJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
More informationBDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
More informationBC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationBC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationMJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS
MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
More informationMJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
More informationVdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High
More informationMJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
More informationMPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
More informationNSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NSS3MZ Bipolar Power Transistors V, 3. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
More informationPZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
More information2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP
2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
More informationNPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
More informationNJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W
NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.
More informationMJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationMPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
More information2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W
Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage
More informationBC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
More informationBC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
More informationBC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon
BC856BWT1, SBC856BWT1, BC857BWT1, SBC857BWT1, BC858AWT1 General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT2
More informationMJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
More informationMPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
More informationNSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
More informationBC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
More informationBC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
More informationMPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
More informationTIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP14, TIP141, TIP142, (); TIP145, TIP146, TIP147, () TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and
More informationBDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors
BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
More informationMMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
More informationMUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationMMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
More informationMUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
More informationMJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications
More informationNJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction
More informationMJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
More informationNSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationNSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor
NSS66MZ, NSV66MZTG, NSV66MZT3G 6 V, 6. A, Low V CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage
More informationNSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m
NSS66MZ 6 V, 6. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V CE(sat) ) and high
More informationTIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V
More informationBC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
More informationMPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
More informationMMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
More informationMUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
More informationNSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
More informationMMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
More informationMJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors. NPN/PNP Silicon DPAK For Surface Mount Applications
MJD (NPN), MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, lowpower, highgain audio amplifier applications. Features High DC Current
More informationNJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
More informationBU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS
NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed
More informationBC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
More informationMJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors
MJD, NJVMJDT4G (NPN), MJD7, NJVMJD7T4G (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in
More informationMJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Complementary Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More information2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
More informationUMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationMMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon
Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are
More informationNSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
More informationMJE18002G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 100 VOLTS 50 WATTS
MJE82G SWITCHMODE NPN Bipolar Power Traistor For Switching Power Supply Applicatio The MJE82G have an applicatio specific stateoftheart die designed for use in 22 V line operated Switchmode Power supplies
More informationMPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS
MPS65, MPS65, MPS, MPS, MPS65 and MPS are Preferred Devices Amplifier Transistors Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol MPS65 MPS MPS65 MPS Unit Collector Emitter Voltage
More informationEMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationMPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
More informationNSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
More informationMMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
More informationBCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS
PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT package which is designed for medium power surface
More informationMJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationBC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
More informationTIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
More informationMMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
More informationMJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead
More informationMJE5740G, MJE5742G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS
NPN Silicon Power Darlington Transistors The MJE74G and MJE74G Darlington transistors are designed for highvoltage power switching in inductive circuits. Features These Devices are PbFree and are RoHS
More informationMMBT2222L, MMBT2222AL, SMMBT2222AL. General Purpose Transistors. NPN Silicon
L, AL, SAL General Purpose Transistors NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant AECQ Qualified and PPAP Capable S Prefix for Automotive and Other Applications
More informationNSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
More information