BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry. High DC Current Gain Specified. to madc High Current Gain Bandwidth Product f T = MHz I C = madc Low Collector Emitter Saturation Voltage V CE(sat) =.4 Vdc I C = madc N94A thru N97, A Complement to NPN N9, A, N, A MAXIMUM RATINGS Rating Symbol Non A Suffix A Suffix Unit Collector Emitter Voltage V CEO 6 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 5. Vdc Collector Current Continuous I C 6 madc Total Device T A = 5 C Derate above 5 C Total Device T C = 5 C Derate above 5 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS N94A N95,A P D 6.4 P D. 7. N96A N97,A mw mw/ C Watts mw/ C T J, T stg 65 to + C Characteristic Symbol Max Unit N94A N95,A N96A N97,A Thermal Resistance, Junction to Ambient R JA 9 48 C/W Thermal Resistance, Junction to Case R JC C/W ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage () Non A Suffix V (BR)CEO Vdc (I C = madc, I B = ) A Suffix 6 Collector Base Breakdown Voltage (I C = µadc, I E = ) V (BR)CBO 6 Vdc Emitter Base Breakdown Voltage (I E = µadc, I C = ) V (BR)EBO 5. Vdc Collector Cutoff Current (V CE = Vdc, V EB =.5 Vdc) I CEX nadc Collector Cutoff Current (V CB = Vdc, I E = ) Non A Suffix A Suffix (V CB = Vdc, I E =, T A = C) Non A Suffix A Suffix I CBO.. Base Current (V CE = Vdc, V EB =.5 Vdc) I B nadc. Pulse Test: Pulse Width s, Duty Cycle.%. BASE Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces N94/D) COLLECTOR EMITTER *N94A, N95A and N97A are Motorola Preferred Devices N94A/N95,A CASE 79 4, STYLE TO 9 (TO 5AD) N96A/N97,A CASE, STYLE TO 8 (TO 6AA) µadc LAST ORDER /9/99 LAST SHIP // Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996

2 h ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C =. madc, V CE = Vdc) N95, N97 N94A, N96A N95A, N97A FE 5 75 (I C =. madc, V CE = Vdc) N95, N97 N94A, N96A N95A, N97A (I C = madc, V CE = Vdc) N95, N97 N94A, N96A N95A, N97A (I C = madc, V CE = Vdc) () N94A, N96A N95,A, N97,A (I C = madc, V CE = Vdc) () N95, N97 N94A, N96A N95A, N97A Collector Emitter Saturation Voltage () (I C = madc, I B = 5 madc) (I C = madc, I B = madc) Base Emitter Saturation Voltage () (I C = madc, I B = 5 madc) (I C = madc, I B = madc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product () (I C = madc, V CE = Vdc, f = MHz) Output Capacitance (V CB = Vdc, I E =, f =. MHz) Input Capacitance (V EB =. Vdc, I C =, f =. MHz) 5 75 V CE(sat) V BE(sat) Vdc Vdc f T MHz C ob 8. pf C ib pf SWITCHING CHARACTERISTICS Turn On Time (V CC = Vdc, I C = madc, t on 6 45 ns Delay Time I B = 5 madc) t d 6. Rise Time (Figure 5a) t r Turn Off Time Storage Time Fall Time (V CC = 6. Vdc, I C = madc, t off 7 ns I B = I B 5 madc) t s 8 (Figure 5b) t f. Pulse Test: Pulse Width s, Duty Cycle.%.. f T is defined as the frequency at which h fe extrapolates to unity. hfe, NORMALIZED DC CURRENT GAIN C +5 C V CE = V V CE =. V C LAST ORDER /9/99 LAST SHIP // Figure. Normalized DC Current Gain Motorola Small Signal Transistors, FETs and Diodes Device Data

3 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) ON VOLTAGE (VOLTS) NF, NOISE FIGURE (db) I C = ma ma T J = 5 C ma ma β o /β F, OVERDRIVE FACTOR V I C /I B = Figure. Normalized Collector Saturation Region V I C /I B = V V CE =. V This graph shows the effect of base current on collector current. β o (current gain at the edge of saturation) is the current gain of the transistor at volt, and β F (forced gain) is the ratio of I C /I BF in a circuit. EXAMPLE: For type N95, estimate a base current (I BF ) to ensure saturation at a temperature of 5 C and a collector current of ma. Observe that at I C = ma an overdrive factor of at least is required to drive the transistor well into the saturation region. From Figure, it is seen that h volt is approximately.6 of h volts. Using the guaranteed minimum ma and V, β o = 6 and substituting values in the overdrive equation, we find: o F h IC IBF 6 IBF IBF 7.5 ma Figure. On Voltages T J = 5 C. I C = µa R S =. kω f, FREQUENCY (khz) θ VC for V CE(sat) 55 C to + 5 C +5 C to +75 C θ VB for V BE +5 C to +75 C SMALL SIGNAL CHARACTERISTICS NOISE FIGURE V CE = V, T A = 5 C I C = µa R S = 4.7 kω I C =. ma R S =.7 kω COEFFICIENT (mv/ C) NF, NOISE FIGURE (db) C to + 5 C Figure 4. Temperature Coefficients µa. ma I C = µa f =. khz R s, SOURCE RESISTANCE (k OHMS) LAST ORDER /9/99 LAST SHIP // Figure 5. Frequency Effects Figure 6. Source Resistance Effects Motorola Small Signal Transistors, FETs and Diodes Device Data

4 hfe, SMALL SIGNAL CURRENT GAIN h ie, INPUT IMPEDANCE (k OHMS) t, TIME (ns) h PARAMETERS V CE = Vdc, f =. khz, T A = 5 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a high gain and a low gain unit were selected and the same units were used to develop the correspondingly numbered curves on each graph Figure 7. Input Impedance t r t d Figure 9. Current Gain V CC = V, V BE(off) = V V CC = V, V BE(off) =. V h, VOLTAGE FEEDBACK RATIO (X 4 re ) h oe, OUTPUT ADMITTANCE ( mhos) Q, CHARGE (pc) Figure 8. Voltage Feedback Ratio Figure. Output Admittance Q A, ACTIVE REGION CHARGE Q T, TOTAL CONTROL CHARGE V CC = V LAST ORDER /9/99 LAST SHIP // Figure. Turn On Time Figure. Charge Data 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

5 ts, STORAGE TIME (ns) ft, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 7 I C /I B = I C /I B = INPUT Z o = Ω PRF = PPS RISE TIME. ns Figure. Storage Time V t s t s /8 t f I B = I B tf, FALL TIME (ns) 7 I C /I B = I C /I B = INPUT Z o = Ω PRF = PPS RISE TIME. µs. k. k TO OSCILLOSCOPE RISE TIME 5. ns 6 V V 7 ns ns Figure 5a. Delay and Rise Time Test Circuit V CE = V T J = 5 C Figure 6. Current Gain Bandwidth Product Figure 5. C, CAPACITANCE (pf) Figure 4. Fall Time +5 V 6.. k 7 N96 Figure 5b. Storage and Fall Time Test Circuit C ib REVERSE BIAS (VOLTS) V CC = V I B = I B TO OSCILLOSCOPE RISE TIME 5. ns Figure 7. Capacitances T J = 5 C C ob LAST ORDER /9/99 LAST SHIP // Motorola Small Signal Transistors, FETs and Diodes Device Data 5

6 IC, COLLECTOR CURRENT (AMP) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.. ms µs..7.5 TO 8 TO 5 µs.. T J = C. SECOND BREAKDOWN LIMITED dc.7 PULSE DUTY CYCLE %.5 BONDING WIRE LIMITED THERMAL T. C = 5 C APPLICABLE FOR RATED BV CEO V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) TO 5 PACKAGE Figure 8. Active Region Safe Operating Areas TO 8 This graph shows the maximum I C V CE limits of the device both from the standpoint of thermal dissipation (at 5 C case temperature), and secondary breakdown. For case temperatures other than 5 C, the thermal dissipation curve must be modified in accordance with the derating factor in the Maximum Ratings table. To avoid possible device failure, the collector load line must fall below the limits indicated by the applicable curve. Thus, for certain operating conditions the device is thermally limited, and for others it is limited by secondary breakdown. For pulse applications, the maximum I C V CE product indicated by the dc thermal limits can be exceeded. Pulse thermal limits may be calculated by using the transient thermal resistance curve of Figure t, TIME (s) Figure 9. Thermal Resistance θ JC (t) = r(t) θ JC LAST ORDER /9/99 LAST SHIP // 6 Motorola Small Signal Transistors, FETs and Diodes Device Data

7 PACKAGE DIMENSIONS T E F H M R E H B M F J A D PL N J B P A L C K SEATING PLANE D PL.6 (.4) M T A M H M P L G C K T.6 (.4) M T A M H M N G SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN.5 (.) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. CASE 79 4 (TO 5AD) ISSUE N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS.5(.) MAXIMUM). CASE (TO 6AA) ISSUE N INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G. BSC 5.8 BSC H J K L. 6.5 M 45 BSC 45 BSC P..7 R..54 STYLE : PIN. EMITTER. BASE. COLLECTOR INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E..76 F G. BSC.54 BSC H J K..7 L. 6.5 M 45 BSC 45 BSC N. BSC.7 BSC P..7 STYLE : PIN. EMITTER. BASE. COLLECTOR LAST ORDER /9/99 LAST SHIP // Motorola Small Signal Transistors, FETs and Diodes Device Data 7

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