Designer s Data Sheet Insulated Gate Bipolar Transistor
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1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies. Industry Standard High Power TO 247 Package with Isolated Mounting Hole High Speed E off : 6 J/A typical at 25 C High Short Circuit Capability s minimum Robust High Voltage Termination MGW2N2 Motorola Preferred Device IGBT IN TO C C 2 VOLTS SHORT CIRCUIT RATED C G G C E E CASE 34K STYLE 4 TO 247AE MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage V CES 2 Vdc Collector Gate Voltage (R GE =. MΩ) V CGR 2 Vdc Gate Emitter Voltage Continuous V GE ±2 Vdc Collector Current T C = 25 C T C = 9 C Repetitive Pulsed Current () Total Power T C = 25 C Derate above 25 C I C25 I C9 I CM P D Operating and Storage Junction Temperature Range T J, T stg 55 to 5 C Adc Apk Watts W/ C Short Circuit Withstand Time (V CC = 72 Vdc, V GE = 5 Vdc, T J = 25 C, R G = 2 Ω) t sc s Thermal Resistance Junction to Case IGBT Junction to Ambient R θjc.7 R θja 35 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 5 seconds T L 26 C Mounting Torque, 6 32 or M3 screw () Pulse width is limited by maximum junction temperature. Repetitive rating. lbf in (.3 N m) Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Designer s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. IGBT 997Device Data
2 MGW2N2 ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage (V GE = Vdc, I C = 25 µadc) Temperature Coefficient (Positive) V (BR)CES 2 Emitter to Collector Breakdown Voltage (V GE = Vdc, I EC = madc) V (BR)ECS 25 Vdc Zero Gate Voltage Collector Current (V CE = 2 Vdc, V GE = Vdc) (V CE = 2 Vdc, V GE = Vdc, T J = 25 C) I CES Gate Body Leakage Current (V GE = ± 2 Vdc, V CE = Vdc) I GES 25 nadc ON CHARACTERISTICS () Collector to Emitter On State Voltage (V GE = 5 Vdc, I C = Adc) (V GE = 5 Vdc, I C = Adc, T J = 25 C) (V GE = 5 Vdc, I C = 2 Adc) Gate Threshold Voltage (V CE = V GE, I C =. madc) Threshold Temperature Coefficient (Negative) V CE(on) V GE(th) 4. Forward Transconductance (V CE = Vdc, I C = 2 Adc) g fe 2 Mhos Vdc mv/ C µadc Vdc Vdc mv/ C DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (V CE = 25 Vdc, V GE = Vdc, f =. MHz) C ies 86 pf C oes 22 C res 29 SWITCHING CHARACTERISTICS () Turn On Delay Time t d(on) 88 ns Rise Time (V CC = 72 Vdc, I C = 2 Adc, t r 3 Turn Off Delay Time V GE = 5 Vdc, L = 3 H R G = 2 Ω) t d(off) 9 Fall Time Energy losses include tail t f 284 Turn Off Switching Loss E off mj Turn On Delay Time t d(on) 83 ns Rise Time (V CC = 72 Vdc, I C = 2 Adc, t r 7 Turn Off Delay Time V GE = 5 Vdc, L = 3 H R G = 2 Ω, T J = 25 C) t d(off) 26 Fall Time Energy losses include tail t f 494 Turn Off Switching Loss E off 3.9 mj Gate Charge (V CC = 72 Vdc, I C = 2 Adc, V GE = 5 Vdc) INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emitter lead.25 from package to emitter bond pad) () Pulse Test: Pulse Width 3 µs, Duty Cycle 2%. Q T 62 nc Q 2 Q 2 25 L E 3 nh 2 Motorola IGBT Device Data
3 TYPICAL ELECTRICAL CHARACTERISTICS MGW2N2 IC, COLLECTOR CURRENT (AMPS) T J = 25 C V GE = 2 V 7.5 V 5 V 2.5 V V I C, COLLECTOR CURRENT (AMPS) T J = 25 C V GE = 2 V 7.5 V 5 V 2.5 V V Figure. Output Characteristics Figure 2. Output Characteristics IC, COLLECTOR CURRENT (AMPS) V CE = V 25 µs PULSE WIDTH T J = 25 C 25 C V GE, GATE TO EMITTER VOLTAGE (VOLTS) 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) V GE = 5 V 25 µs PULSE WIDTH I C = 2 A 5 A A 5 5 T J, JUNCTION TEMPERATURE ( C) 5 Figure 3. Transfer Characteristics Figure 4. Collector to Emitter Saturation Voltage versus Junction Temperature C, CAPACITANCE (pf), C ies C oes C res T J = 25 C V GE = V VGE, GATE TO EMITTER VOLTAGE (VOLTS) Q T Q Q Q g, TOTAL GATE CHARGE (nc) T J = 25 C I C = 2 A 6 7 Figure 5. Capacitance Variation Figure 6. Gate to Emitter Voltage versus Total Charge Motorola IGBT Device Data 3
4 MGW2N2 I C, COLLECTOR CURRENT (AMPS). V GE = 5 V R GE = 2 Ω T J = 25 C Figure 7. Reverse Biased Safe Operating Area,. D =.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE..E 5.E 4.E 3.E 2.E.E+.E+ t, TIME (s) P (pk) t t 2 DUTY CYCLE, D = t /t 2 R θjc (t) = r(t) R θjc D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) T C = P (pk) R θjc (t) Figure 8. Thermal Response 4 Motorola IGBT Device Data
5 PACKAGE DIMENSIONS MGW2N2 Q.25 (.) M T B M U A P K F D B 2 3 G V R L Y C J E T H 4 NOTES: М. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. М 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E.27 REF.5 REF F G 5.5 BSC.26 BSC H J K L 5.5 NOM.27 NOM P Q R 5. NOM.97 NOM U 5.5 BSC.27 BSC V (.) M Y Q S CASE 34K TO 247AE ISSUE A STYLE 4: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR Motorola IGBT Device Data 5
6 MGW2N2 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4, P.O. Box 545, Denver, Colorado or Nishi Gotanda, Shagawa ku, Tokyo, Japan Customer Focus Center: Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong HOME PAGE: 6 MGW2N2/D Motorola IGBT Device Data
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