BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
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- Evangeline Lamb
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1 BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 CollectorEmitter Sustaining Voltage at madc V CEO(sus) = 80 (min) BDX33B, BDX334B = (min) BDX33C, BDX334C Low CollectorEmitter Saturation Voltage V CE(sat) = 2.5 (max) at I C = Adc BDX33B, 33C/34B, 34C Monolithic Construction with BuildIn BaseEmitter Shunt Resistors PbFree Packages are Available* DARLINGTON AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage BDX33B, BDX34B BDX33C, BDX34C CollectorBase Voltage BDX33B, BDX34B BDX33C, BDX34C V CEO 80 V CB 80 EmitterBase Voltage V EB 5.0 Collector Current Continuous Peak I C 15 Adc Base Current I B 5 Adc Total Device T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 70 6 W W/ C T J, T stg 65 to +150 C AB CASE 221A09 STYLE 1 MARKING DIAGRAM BDX3xyG AY WW THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 1.78 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BDX3xy A Y WW G = Device Code x = 3 or 4 y = B or C = Assembly Location = Year = Work Week = PbFree Package *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 6 February, 6 Rev Publication Order Number: BDX33B/D
2 80 P D, POWER DISSIPATION (WATTS) T C, CASE TEMPERATURE ( C) Figure 1. Power Derating Î ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Max Unit Î OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V CEO(sus) (I C = madc, I B = 0) BDX33B/BDX34B BDX33C/BDX34CÎÎ 80 Î CollectorEmitter Sustaining Voltage (Note 1) V CER(sus) (I C = madc, I B = 0, R BE = ) BDX33B/BDX34B ÎÎ 80 Î BDX33C/BDX33C Î CollectorEmitter Sustaining Voltage (Note 1) V (I C = madc, I B = 0, V BE = 1.5 ) BDX33B/BDX34B CEX(sus) 80 Î BDX33C/BDX34C Î Collector Cutoff Current I (V CE = 1/2 rated V CEO, I B = 0) T C = 25 C CEO madc Î T C = C ÎÎ Î Collector Cutoff Current (V CB = rated V CBO, I E = 0) T C I CBO madc = 25 C T C = C ÎÎ Î 5.0 Emitter Cutoff Current I EBO Î madc (V BE = 5.0, I C = 0) Î ON CHARACTERISTICS Î DC Current Gain (Note 1) h (I C = Adc, V CE = ) BDX33B, 33C/34B, 34C FE 750 Î Î CollectorEmitter Saturation Voltage V CE(sat) Î (I C = Adc, I B = 6.0 madc) BDX33B, 33C/34B, 34C ÎÎ 2.5 Î BaseEmitter On Voltage V BE(on) (I C = Adc, V CE Î 2.5 = ) BDX33B, 33C/34B, 34C Î Diode Forward Voltage V F (I C = 8.0 Adc) ÎÎ Î 4.0 Î 1. Pulse Test: Pulse Width s, Duty Cycle %. 2. Pulse Test non repetitive: Pulse Width = 5 seconds. 2
3 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.01 SINGLE PULSE P (pk) t 1 t 2 SINGLE PULSE DUTY CYCLE, D = t 1 /t 2 R JC (t) = r(t) R JC R JC = 1.92 C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) T C = P (pk) R JC (t) t, TIME OR PULSE WIDTH (ms) Figure 1. Thermal Response 5.0 T C = 25 C 5.0 ms ms BONDING WIRE LIMITED THERMALLY T C = 25 C М(SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO dc BDX34B BDX34C 500 s 5.0 T C = 25 C V CE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 2. ActiveRegion Safe Operating Area s 5.0 ms ms BONDING WIRE LIMITED THERMALLY T C = 25 C М(SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V CEO V CE, COLLECTOREMITTER VOLTAGE (VOLTS) dc BDX33B BDX33C s 500 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided T J(pk) = 150 C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. h FE, SMALLSIGNAL CURRENT GAIN, V CE = 4.0 I C = Adc PNP NPN f, FREQUENCY (khz) Figure 3. SmallSignal Current Gain C, CAPACITANCE (pf) PNP NPN C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance 3
4 NPN BDX33B, 33C PNP BDX34B, 34C,000,000 V CE = 4.0 V,000,000 V CE = 4.0 V h FE, DC CURRENT GAIN T J = 150 C 25 C 55 C h FE, DC CURRENT GAIN T J = 150 C 25 C 55 C Figure 5. DC Current Gain V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 I C = A 4.0 A 6.0 A V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 2.6 I C = A 4.0 A 6.0 A I B, BASE CURRENT (ma) I B, BASE CURRENT (ma) Figure 6. Collector Saturation Region V, VOLTAGE (VOLTS) V I C /I B = 250 V, VOLTAGE (VOLTS) V V CE = 4.0 V V V CE = 4.0 V V I C /I B = 250 V I C /I B = 250 V I C /I B = Figure 7. On Voltages 4
5 ORDERING INFORMATION BDX33B BDX33BG Device Package Shipping (PbFree) BDX33C BDX33CG BDX34B BDX34BG (PbFree) (PbFree) BDX34C BDX34CG (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5
6 PACKAGE DIMENSIONS AB CASE 221A09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1551 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. BDX33B/D
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Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
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NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
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