SEMICONDUCTOR TECHNICAL DATA

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for W Audio Frequency Gain Complementary: Gain Linearity from ma to 7 A High Gain 6 to hfe = 45 IC = 8 A Low Harmonic Distortion High Safe Operation Area 1 A/ 1 Second High ft 3 MHz Typical *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 2 VOLTS 2 WATTS MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit Collector Emitter Voltage VCEO 2 Vdc Collector Base Voltage VCBO 2 Vdc Emitter Base Voltage VEBO 7 Vdc Collector Emitter Voltage 1.5 V VCEX 2 Vdc Collector Current Continuous Collector Current Peak (1) CASE 34G 2, STYLE 2 TO 264 IC Base Current Continuous IB 1.5 Adc Adc Total Power TC = 25 C Derate Above 25 C PD Watts W/ C Operating and Storage Junction Temperature Range TJ, Tstg 65 to +15 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC.7 C/W ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = madc, IB = ) VCEO(sus) 2 Vdc Emitter Base Voltage (IE = Adc, IC = ) VEBO 7 (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle < %. (continued) Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Designer s is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Vdc Motorola, Inc Motorola Bipolar Power Transistor Device Data 1

2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Cutoff Current (VCB = 2 Vdc, IE = ) ICBO 5 µadc Emitter Cutoff Current (VEB = 5 Vdc, IC = ) IEBO 5 µadc Emitter Cutoff Current (VEB = 7 Vdc, IC = ) IEBO 25 µadc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 5 Vdc, t = 1 s (non repetitive) (VCE = Vdc, t = 1 s (non repetitive) IS/b 4 1 Adc ON CHARACTERISTICS DC Current Gain (IC = madc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hfe Collector Emitter Saturation Voltage (IC = Adc, IB = 1 Adc) VCE(sat) 3 Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ) ft 3 MHz Output Capacitance (VCB = Vdc, IE =, ) Cob 6 pf f T, CURRENT BANDWIDTH PRODUCT (MHz) V VCE = V f T, CURRENT BANDWIDTH PRODUCT (MHz) V VCE = V Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product 2 Motorola Bipolar Power Transistor Device Data

3 TYPICAL CHARACTERISTICS TJ = C 25 C 25 C TJ = C VCE = 2 V VCE = 2 V Figure 3. DC Current Gain, VCE = 2 V Figure 4. DC Current Gain, VCE = 2 V TJ = C 25 C 25 C TJ = C VCE = 5 V VCE = 5 V Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V I C, COLLECTOR CURRENT (A) A VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) IB = 2 A 1 A.5 A I C, COLLECTOR CURRENT (A) A IB = 2 A 35 1 A 3.5 A VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 3

4 TYPICAL CHARACTERISTICS SATURATION VOLTAGE (VOLTS) IC/IB = VBE(sat) VCE(sat) SATURATION VOLTAGE (VOLTS) IC/IB = VBE(sat) VCE(sat) Figure 9. Typical Saturation Voltages Figure. Typical Saturation Voltages V BE(on), BASE EMITTER VOLTAGE (VOLTS) VCE = 5 V (DASHED) VCE = 2 V (SOLID) V BE(on), BASE EMITTER VOLTAGE (VOLTS) VCE = 5 V (DASHED) VCE = 2 V (SOLID) Figure 11. Typical Base Emitter Voltage Figure 12. Typical Base Emitter Voltage I C, COLLECTOR CURRENT (AMPS) ms 5 ms 1 sec 25 ms VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 2 C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 4 Motorola Bipolar Power Transistor Device Data

5 TYPICAL CHARACTERISTICS Cib Cib C, CAPACITANCE (pf) Cob C, CAPACITANCE (pf) Cob VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL132A Typical Capacitance Figure 15. MJL3281A Typical Capacitance Motorola Bipolar Power Transistor Device Data 5

6 PACKAGE DIMENSIONS.25 (.) M T B M R N Y F 2 PL B Q U A L P K W G D 3 PL.25 (.) M Y Q S J H C T E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC.215 BSC H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 34G 2 ISSUE F Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, P.O. Box 545, Denver, Colorado or Nishi Gotanda, Shinagawa ku, Tokyo, Japan Customer Focus Center: Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong HOME PAGE: 6 Motorola Bipolar Power Transistor Device MJL3281A/D Data