J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 1 madc Total Device Derate above 25 C PD mw mw/ C CASE 29 4, STYLE 5 TO 92 (TO 226AA) Junction Temperature Range TJ 65 to +125 C Storage Temperature Range Tstg 65 to +15 C ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate Source Breakdown Voltage V(BR)GSS 25 Vdc (IG = 1. µadc, VDS = ) Gate Reverse Current (VGS = 15 Vdc, VDS =, ) (VGS = 15 Vdc, VDS =, TA = +125 C) Gate Source Cutoff Voltage (VDS = 1 Vdc, ID = 1. nadc) ON CHARACTERISTICS Zero Gate Voltage Drain Current(1) (VDS = 1 Vdc, VGS = ) Gate Source Forward Voltage (VDS =, IG = 1. madc) SMALL SIGNAL CHARACTERISTICS Common Source Input Conductance (VDS = 1 Vdc, ID = 1 madc, f = 1 MHz) Common Source Output Conductance (VDS = 1 Vdc, ID = 1 madc, f = 1 MHz) Common Gate Power Gain (VDS = 1 Vdc, ID = 1 madc, f = 1 MHz) 1. Pulse Test: Pulse Width 3 µs, Duty Cycle 3.%. J38 J39 J31 J38 J39 J31 J38 J39 J31 IGSS VGS(off) IDSS nadc µadc Vdc madc VGS(f) 1. Vdc Re(yis) mmhos Re(yos).25 mmhos Gpg 16 db Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc

2 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL SIGNAL CHARACTERISTICS (continued) Common Source Forward Transconductance Re(yfs) 12 mmhos (VDS = 1 Vdc, ID = 1 madc, f = 1 MHz) Common Gate Input Conductance (VDS = 1 Vdc, ID = 1 madc, f = 1 MHz) Common Source Forward Transconductance (VDS = 1 Vdc, ID = 1 madc, f = 1. khz) Common Source Output Conductance (VDS = 1 Vdc, ID = 1 madc, f = 1. khz) Common Gate Forward Transconductance (VDS = 1 Vdc, ID = 1 madc, f = 1. khz) Common Gate Output Conductance (VDS = 1 Vdc, ID = 1 madc, f = 1. khz) Gate Drain Capacitance (VDS =, VGS = 1 Vdc, f = 1. MHz) Gate Source Capacitance (VDS =, VGS = 1 Vdc, f = 1. MHz) FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 1 Vdc, ID = 1 madc, f = 45 MHz) J38 J39 J31 J38 J39 J31 J38 J39 J31 Re(yig) 12 mmhos gfs µmhos gos 25 µmhos gfg gog µmhos µmhos Cgd pf Cgs pf NF 1.5 db Equivalent Short Circuit Input Noise Voltage (VDS = 1 Vdc, ID = 1 madc, f = 1 Hz) en 1 nv 2Hz 2 Motorola Small Signal Transistors, FETs and Diodes Device Data

3 5 Ω SOURCE C3 L1 C5 C1 U31 C2 L2P C6 L2S C4 5 Ω LOAD 1. k C7 RFC +VDD C1 = C2 =.8 1 pf, JFD #MVM1W. C3 = C4 = 8.35 pf Erie #539 2D. C5 = C6 = 5 pf Erie (2443 ). C7 = 1 pf, Allen Bradley #FA5C. RFC =.33 µh Miller # L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). Figure MHz Common Gate Amplifier Test Circuit I D, DRAIN CURRENT (ma) VDS = 1 V IDSS TA = 55 C 55 C +15 C +15 C ID VGS, GATE SOURCE VOLTAGE (VOLTS) IDSS VGS, GATE SOURCE CUTOFF VOLTAGE (VOLTS) , SATURATION DRAIN CURRENT (ma) I DSS Y fs, FORWARD TRANSCONDUCTANCE (mmhos) VDS = 1 V f = 1. MHz TA = 55 C +15 C 55 C VGS, GATE SOURCE VOLTAGE (VOLTS) +15 C Figure 2. Drain Current and Transfer Characteristics versus Gate Source Voltage Figure 3. Forward Transconductance versus Gate Source Voltage, FORWARD TRANSCONDUCTANCE ( mhos) Y fs µ 1 k 1 k 1. k Yos VGS(off) = 2.3 V = VGS(off) = 5.7 V = Yfs ID, DRAIN CURRENT (ma) Yfs 1. k 1 1, OUTPUT ADMITTANCE ( mhos) Y os µ CAPACITANCE (pf) RDS Cgs Cgd VGS, GATE SOURCE VOLTAGE (VOLTS) R DS, ON RESISTANCE (OHMS) Figure 4. Common Source Output Admittance and Forward Transconductance versus Drain Current Figure 5. On Resistance and Junction Capacitance versus Gate Source Voltage Motorola Small Signal Transistors, FETs and Diodes Device Data 3

4 3 3. S21, S S12, S Y11, Y21, Y22 (mmhos) VDS = 1 V ID = 1 ma Y11 Y21 Y Y 12 (mmhos) VDS = 1 V ID = 1 ma S21 S11 S Y S Figure 6. Common Gate Y Parameter Magnitude versus Frequency Figure 7. Common Gate S Parameter Magnitude versus Frequency θ21, θ θ22 θ21 θ12, θ θ11, θ θ21 θ11 θ22 θ21, θ θ12 θ11 1 VDS = 1 V ID = 1 ma θ21 θ12 4 VDS = 1 V θ11 ID = 1 ma Figure 8. Common Gate Y Parameter Phase Angle versus Frequency Figure 9. S Parameter Phase Angle versus Frequency NF, NOISE FIGURE (db) VDD = 2 V f = 45 MHz BW 1 MHz CIRCUIT IN FIGURE 1 Gpg NF ID, DRAIN CURRENT (ma) Figure 1. Noise Figure and Power Gain versus Drain Current G pg, POWER GAIN (db) NF, NOISE FIGURE (db) VDS = 1 V ID = 1 ma CIRCUIT IN FIGURE 1 Gpg NF Figure 11. Noise Figure and Power Gain versus Frequency G pg, POWER GAIN (db) 4 Motorola Small Signal Transistors, FETs and Diodes Device Data

5 C1 INPUT RS = 5 Ω L1 C2 L2 VS C3 U31 S D G C4 SHIELD C6 L3 C5 L4 VD OUTPUT RL = 5 Ω BW (3 db) 36.5 MHz ID 1 madc VDS 2 Vdc Device case grounded IM test tones f1 = MHz, f2 = 45.5 MHz C1 = 1 1 pf Johanson Air variable trimmer. C2, C5 = 1 pf feed thru button capacitor. C3, C4, C6 =.5 6 pf Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 1 5/8 copper bar. L2, L4 = Ferroxcube Vk2 choke. L3 = 1/8 x 1/32 x 1 7/8 copper bar. Figure MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 db, the 3rd order intercept point (IP) value is 29 dbm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 db can be achieved with an intercept point of 19 dbm. OUTPUT POWER PER TONE (dbm) U31 JFET VDS = 2 Vdc ID = 1 madc F1 = MHz F2 = 45.5 MHz FUNDAMENTAL OUTPUT 3RD ORDER INTERCEPT POINT 3RD ORDER IMD OUTPUT INPUT POWER PER TONE (dbm) Example of intercept point plot use: Assume two in band signals of 2 dbm at the amplifier input. They will result in a 3rd order IMD signal at the output of 9 dbm. Also, each signal level at the output will be 11 dbm, showing an amplifier gain of 9. db and an intermodulation ratio (IMR) capability of 79 db. The gain and IMR values apply only for signal levels below comparison. Figure 13. Two Tone 3rd Order Intercept Point Motorola Small Signal Transistors, FETs and Diodes Device Data 5

6 PACKAGE DIMENSIONS SEATING PLANE R A X X H V 1 N F G P N B L K C D J SECTION X X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N P R V CASE 29 4 (TO 226AA) ISSUE AD STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE 6 Motorola Small Signal Transistors, FETs and Diodes Device Data

7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Small Signal Transistors, FETs and Diodes Device Data 7

8 Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, , P.O. Box 545, Denver, Colorado or Nishi Gotanda, Shinagawa ku, Tokyo 141, Japan Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong INTERNET: 8 Motorola Small Signal Transistors, FETs and Diodes Device J38/D Data

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by MPF2/D N Channel Depletion 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate