Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db
|
|
- Alexia Mathews
- 5 years ago
- Views:
Transcription
1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip technology and reliable Motorola push pull transistors. Specified 8 Volts, MHz Characteristics Output Power 1 Watts (CW) Gain 8 db Min (@ 1 W) 5 Ω Input and Output Impedance 1 W C.W. (8 V) 7 W P. SYNC. (3 V) MHz RF POWER AMPLIFIER CASE 49, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage VCC 3 Vdc Quiescent Current ICQ [ x 3] madc Input Power Pin 35 W Storage Temperature Range Tstg to + C Operating Temperature (1) Top to +7 C ELECTRICAL CHARACTERISTICS (TC = 5 C, VCC = 8 V, ICQ = x ma, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db FUNCTIONAL TESTS IN CW (SOUND) (TC = 5 C, VCC = 8 V, ICQ = x ma, f = MHz, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Power Gain (Pout = 1 W) Gp 8 db Gain Ripple (Pout = 1 W) Grple ±1 db Output 1 db Compression Pout 1 W Mismatch Tolerance (Pout = 1 W) VSWR 3:1 Efficiency (Pout = 1 W) η % FUNCTIONAL TESTS IN VIDEO (standard black level) Peak Output Power (synch.) (VCC = 8 Vdc) Characteristic Symbol Min Typ Max Unit Pout1 3 W Peak Output Power (synch.) (VCC = 3 Vdc) Pout 7 W NOTE: 1. Temperature is measured at temperature test point (on the flange of the transistor). MOTOROLA Motorola, Inc RF DEVICE DATA 1
2 TYPICAL CHARACTERISTICS CW WIDEBAND 11 G p,power GAIN (db) 9 VCC = 8 V Pout = 1 W COMPRESSION (db) 1 VCC = 8 V Pout = 1 W f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 1. Power Gain versus Frequency Figure. Gain Compression versus Frequency Is,CURRENT (A) f, FREQUENCY (MHz) VCC = 8 V Pout = 1 W Figure 3. Supply Current versus Frequency MAXIMUM AVERAGE OUTPUT POWER (CW) TRANSISTOR FLANGE TEMPERATURE ( C) Figure 4. Maximum Average Output Power versus Temperature MAXIMUM PEAK SYNCH. OUTPUT POWER (CW) TRANSISTOR FLANGE TEMPERATURE ( C) Figure 5. Maximum Peak Synch. Output Power (B/G Standard) versus Temperature
3 TYPICAL VIDEO f = 86 MHz TEST CONDITIONS: DIFF. Gain, Steps Channel 61 VCE = 8 V VIDEO SIGNAL % % Pout = 16 W Pout = W Pout = 5 W Figure 6. Differential Gain
4 APPLICATIONS INFORMATION HEATSINK TOOLING Ra.8 8 Fixing holes M3 Minimum useful depth: 6 mm Cavities 5 Minimum depth: 1 mm MOUNTING RECOMMENDATIONS THERMAL COMPOUND Paste with silicones: SICERONT KF Ref. 1 Recommended. Thickness: Optimum between.6 mm and.15 mm, on the whole back surface of the amplifier. (Typical volume: 7 mm 3 for.1 mm thickness) (Equivalent weight: 1.5g for. density paste). SCREWS Socket head cap screws: CHC M3 x for Copper/Aluminum Heatsink. Material: Nickel plated steel. WASHERS Split lock washers WZ 3 + Flat washers ZU 3. 4
5 MOUNTING RECOMMENDATIONS (continued) TIGHTENING ORDER INPUT 3 4 OUTPUT 7 6 Recommended Torque: 1 Kg.cm (.5 in.lbs) MOUNTING VERIFICATION Make the amplifier work at nominal RF conditions, and measure temperature on points 1,, 3, and 4. T1 T T3 Characteristic Typ Max Unit T1, T, T3, T4 (T1, T), (T3, T4) C C T4 CLEANING Some components of the amplifier are not qualified for every kind of cleaning solvent; do not clean the amplifier in a solvent bath. Local cleaning is recommended. 5
6 PACKAGE DIMENSIONS B K J H G N 1 P M D S Q 8 PL A R 3 F L COMPONENT AREA C GROUND TO CASE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L M N P Q R S MILLIMETERS MIN MAX INCHES MIN MAX STYLE 1: PIN 1. RF INPUT. DC VOLTAGE 3. RF OUTPUT GROUND TO PLANE CASE 49 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 91; Phoenix, Arizona EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-3-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 MOTOROLA RF DEVICE /D DATA
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
More informationPD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
More informationPD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
More informationPD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit
SEICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for 9 Hz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF amplifier
More informationP D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment
More informationPD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
More informationEB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER
MOTOROLA Order this document by EB63/D SEMICONDUCTOR ENGINEERING BULLETIN EB63 140 W (PEP) AMATEUR RADIO LINEAR AMPLIFIER 2 30 MHz The popularity of 2 30 MHz, SSB, Solid State, linear amplifiers is increasing
More informationPD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
More informationPD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
More informationPD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
More informationARCHIVE INFORMATION LOW POWER NARROWBAND FM IF
Order this document by MC6C/D The MC6C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for use
More informationWatts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to
More informationPD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed
More informationMRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D... for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hfe = 6000 (Typ) @ IC = 3.0 Adc Monolithic
More informationSN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510
DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LSTTL/ MSI SN54/ LS353 is a Dual 4-Input Multiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs.
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage
More informationSN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366
UNIVERSAL 4-BIT SHIFT REGISTER The SN54 / 74LS95A is a high speed 4-Bit Shift Register offering typical shift frequencies of 39 MHz. It is useful for a wide variety of register and counting applications.
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters,
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationNOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L.
DUAL -OF-4 DECODER/ DEMULTIPLEXER The SN54/ LS55 and SN54/ LS56 are high speed Dual -of-4 Decoder/Demultiplexers. These devices have two decoders with common 2-bit Address inputs and separate gated Enable
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE23/D The MJE23 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
More informationARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005
Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band
More informationLAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER
nc. Order this document by MRFIC856/D The MRFIC856 is designed for dual band subscriber equipment applications at in the cellular (800 MHz) and PCS (900 MHz) bands. The device incorporates two phemt GaAs
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
More informationRF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA
MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.
More informationPD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 5 MHz. Guaranteed
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for
More informationFor Isolated Package Applications
SEMONDUCTOR TECHNAL DATA Order this document by BUT11AF/D For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications.
More informationNOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.
BCD DECADE/MODULO BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS The SN54/ 74LS8 and SN54/ 74LS9 are fully synchronous 4-stage up/down counters featuring a preset capability for programmable operation, carry
More informationDPAK For Surface Mount Applications
SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching
More informationPD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.8 C/W
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 2 MHz frequency range.
More information2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector
More information2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.
Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular
More informationARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
More informationNPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
More informationDesigner s Data Sheet Insulated Gate Bipolar Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor
More informationARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)
More informationMJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS
SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
More information1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationNOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.
PRESETTABLE BCD/DECADE UP/DOWN COUNTER PRESETTABLE 4-BIT BINARY UP/DOWN COUNTER The SN54/74LS192 is an UP/DOWN BCD Decade (8421) Counter and the SN54/74LS193 is an UP/DOWN MODULO- Binary Counter. Separate
More informationELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at
More informationMPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
More informationLOW POWER NARROWBAND FM IF
Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)
More information2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector
More informationTIP120, TIP121, TIP122,
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector
More informationCharacteristic Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 6 C/W
Technical Data Silicon Lateral FET, N-Channel Enhancement-Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
More information2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector
More informationCOLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction
More informationPD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line Designed for wideband large signal amplifier and oscillator applications up to MHz range, in single ended configuration. Guaranteed
More informationWIDEBAND AMPLIFIER WITH AGC
Order this document by MC9/D The MC9 is an integrated circuit featuring wide range AGC for use in RF/IF amplifiers and audio amplifiers over the temperature range, to + C. High Power Gain: db Typ at MHz
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
More informationPD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF26/D The RF Sub Micron Bipolar Line The MRF26 and MRF26S are designed for broadband commercial and industrial applications at frequencies from 1 to
More informationTIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @
More informationJ308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc
More informationCOLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
More informationLOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION
Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion
More informationWatts W/ C Storage Temperature Range T stg 65 to +200 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies
More informationSN54/74LS196 SN54/74LS197 4-STAGE PRESETTABLE RIPPLE COUNTERS 4-STAGE PRESETTABLE RIPPLE COUNTERS FAST AND LS TTL DATA 5-372
4-STAGE PRESETTABLE RIPPLE COUNTERS The SN54/74LS196 decade counter is partitioned into divide-by-two and divide-by-five sectio which can be combined to count either in BCD (8, 4, 2, 1) sequence or in
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D Prepared by: Jean Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8020/D The MOC8020 and MOC802 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington
More informationNPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
More informationBASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
More informationFreescale Semiconductor, I
nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D Single RF power transistors seldom satisfy today s design criteria; several devices in separate packages 1, or in the same package (balanced,
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6547/D The 2N6547 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
More informationMJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
More informationDistributed by: www.jameco.com 1--31-4242 The content and copyrights of the attached material are the property of its owner. Order this document by M3/D The M3 is an integrated circuit featuring wide range
More information1.0. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D The RF Line... designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt,
More informationLM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR
Order this document by /D The is an adjustable threeterminal negative voltage regulator capable of supplying in excess of 5 ma over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally
More information1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
More information2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
More informationDesigned for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability.
Designed for FM radio transposers and transmitters, this amplifier incorporates MOSFET transistors to enhance ruggedness and reliability. General characteristics: 87.5-108.0 MHz. 48 Volts. Internal Bias.
More informationRF LDMOS Wideband 2-Stage Power Amplifiers
Technical Data RF LDMOS Wideband 2-Stage Power Amplifiers Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by N/D The N, N and N7 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
More informationRating Symbol Value Unit Drain Source Voltage V DSS 65 Vdc Gate Source Voltage V GS ±20 Vdc Total Device T C = 25 C Derate above 25 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
More information4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
More informationMJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
More informationTIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
More informationWatts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from
More informationLIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered
More informationPNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationNPN Silicon ON Semiconductor Preferred Device
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
More informationMC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution
More informationGallium Arsenide PHEMT RF Power Field Effect Transistor
Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications.
More informationQUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS
Order this document by MC3487/D Motorolas Quad EIA422 Driver features four independent driver chains which comply with EIA Standards for the Electrical Characteristics of Balanced Voltage Digital Interface
More information100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
More informationSN54/74LS390 SN54/74LS393 DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER FAST AND LS TTL DATA 5-544
DUA DECADE ER; DUA -STAGE BINARY ER The SN5/7S and SN5/7S each contain a pair of high-speed -stage ripple counters. Each half of the S is partitioned into a divide-by-two section and a divide-by five section,
More information