ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.
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1 Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. Third Order Intercept: 49 dbm Typ Power Gain: 17.5 db Typ (@ ) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA and CDMA Multi- Carrier Applications 3.0 W, 17.5 db MHz RF LINEAR LDMOS AMPLIFIER CASE 301AS-01, STYLE 1 Table 1. Absolute Maximum Ratings ( unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage V DD 30 Vdc RF Input Power P in +20 dbm Storage Temperature Range T stg - 40 to +100 C Operating Case Temperature Range T C - 20 to +100 C Table 2. Electrical Characteristics (dc, ; 50 Ω System) Characteristic Symbol Min Typ Max Unit Supply Current I DD ma Power Gain () db Gain Flatness (f = MHz) G F db Power 1 db Comp. () P out 1 db 35.5 dbm Input VSWR (f = MHz) VSWR in 1.2:1 1.5:1 Output VSWR (f = MHz) VSWR out 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO dbm Noise Figure (f = 960 MHz) NF db, Inc., All rights reserved. 1
2 POWER GAIN/RETURN LOSS (db) I ORL IRL P1dB, ITO (dbm) ITO P1dB f, FREQUENCY (MHz) f, FREQUENCY (MHz) 1200, POWER GAIN (db) ) PHASE( Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency I DD TEMPERATURE ( C) Figure 3. Power Gain, I DD versus Temperature PHASE GROUP DELAY DD (ma) GROUP DELAY (ns) ITO (dbm), GAIN FLATNESS (db) G F Figure 2. P1dB, ITO versus Frequency TEMPERATURE ( C) ITO P1dB Figure 4. ITO, P1dB versus Temperature f = MHz PHASE LINEARITY P1dB (dbm) PHASE LINEARITY ( ) TEMPERATURE ( C) Figure 5. Phase (1), Group Delay (1) versus Temperature 1. In Production Test Fixture G F TEMPERATURE ( C) Figure 6. Gain Flatness, Phase Linearity versus Temperature 2
3 I TYPICAL CHARACTERISTICS , POWER GAIN (db) I DD DD (ma) ITO (dbm) 46 ITO P1dB P1dB (dbm) PHASE ( ) VOLTAGE (VOLTS) VOLTAGE (VOLTS) Figure 7. Power Gain, I DD versus Voltage 24 PHASE 26 VOLTAGE (VOLTS) GROUP DELAY Figure 9. Phase (1), Group Delay (1) versus Voltage 1. In Production Test Fixture GROUP DELAY (ns) PHASE LINEARITY ( ) Figure 8. ITO, P1dB versus Voltage PHASE LINEARITY G F f = MHz VOLTAGE (VOLTS) Figure 10. Phase Linearity, Gain Flatness versus Voltage G, GAIN FLATNESS (db) F
4 NOTES 4
5 NOTES 5
6 NOTES 6
7 PACKAGE DIMENSIONS -A (0.020) M T A M G -B- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. K R 0.51 (0.020) M T -S- -T- J D 3 PL B P M 3 PL (0.020) M T H N W F Q 2 PL 0.20 (0.008) M T E S C CASE 301AS-01 ISSUE A M A M SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F BSC 2.18 BSC G BSC BSC H BSC BSC J K N BSC 9.91 BSC P Q R S W BSC 2.29 BSC STYLE 1: PIN 1. RF INPUT 2. VDD 3. RF OUTPUT CASE: GROUND 7
8 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Document Number: Rev. 3, 1/2005 8
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MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz Suitable for WiMAX, WiBro
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
RF LDMOS Wideband Integrated Power Amplifiers
Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 96 MHz. This multi-stage structure
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
LOW POWER NARROWBAND FM IF
Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break
NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching