P D Storage Temperature Range T stg - 65 to +175 C Operating Junction Temperature T J 200 C

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1 Technical Data Document Number: MRF6S186 Rev. 2, 5/26 Replaced by MRF6S186NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S186MR1 MRF6S186MBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 18 to 2 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application Typical GSM Performance:, I DQ = 6 ma, P out = 6 Watts CW, Full Frequency Band ( MHz or MHz) Power Gain 15 db Drain Efficiency - 5% GSM EDGE Application Typical GSM EDGE Performance: V DD = 26 Volts, I DQ = 45 ma, P out = 25 Watts Avg., Full Frequency Band ( MHz or MHz) Power Gain 15.5 db Spectral 4 khz Offset = -62 dbc Spectral 6 khz Offset = -76 dbc EVM 2% rms Capable of Handling 5:1 26 Vdc, 199 MHz, 6 Watts CW Output Power Characterized with Series Equivalent Large- Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 2 C Capable Plastic Package In Tape and Reel. R1 Suffix = 5 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -.5, +68 Vdc Gate-Source Voltage V GS -.5, +12 Vdc Total Device T C = 25 C Derate above 25 C 18-2 MHz, 6 W, 26 V GSM/GSM EDGE LATERAL N- CHANNEL RF POWER MOSFETs CASE , STYLE 1 TO-27 WB-4 PLASTIC MRF6S186MR1 CASE , STYLE 1 TO-272 WB-4 PLASTIC MRF6S186MBR1 P D Storage Temperature Range T stg - 65 to +175 C Operating Junction Temperature T J 2 C W W/ C Table 2. Thermal Characteristics Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case Case Temperature 8 C, 6 W CW Case Temperature 77 C, 25 W CW R θjc C/W 1. MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., 26. All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 1B (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C1) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = Vdc) On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 2 μadc) Gate Quiescent Voltage (V DS = 26 Vdc, I D = 6 madc) Drain-Source On-Voltage (V GS = Vdc, I D = 2 Adc) Forward Transconductance (V DS = Vdc, I D = 2 Adc) Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Reverse Transfer Capacitance (1) (V DS = 26 Vdc ± 3 1 MHz, V GS = Vdc) I DSS μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on).24 Vdc g fs 5.3 S C rss 1.5 pf Functional Tests (In Freescale Test Fixture, 5 ohm system), I DQ = 6 ma, P out = 6 W, f = 193 MHz, f = 199 MHz Power Gain G ps db Drain Efficiency η D 48 5 % Input Return Loss IRL db P 1 db Compression Point P1dB 6 65 W 1. Part is internally matched both on input and output. (continued) 2

3 Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 5 οhm system), I DQ = 45 ma, P out = 25 W Avg., 185 MHz<Frequency<188 MHz or 193 MHz<Frequency<199 MHz Power Gain G ps 15.5 db Drain Efficiency η D 32 % Error Vector Magnitude EVM 2 % rms Spectral Regrowth at 4 khz Offset SR1-62 dbc Spectral Regrowth at 6 khz Offset SR2-76 dbc Typical CW Performances (In Freescale Broadband Test Fixture, 5 οhm system), I DQ = 6 ma, P out = 6 W, 185 MHz<Frequency<188 MHz or 193 MHz<Frequency<199 MHz Power Gain G ps 15 db Drain Efficiency η D 5 % Input Return Loss IRL -12 db P 1 db Compression Point, CW P1dB 65 W 3

4 V BIAS R1 R2 C1 Z6 C2 C9 C + C11 V SUPPLY Z13 RF INPUT Z1 C3 Z2 C5 Z3 C6 R3 Z4 Z5 Z7 DUT Z8 C7 Z9 Z Z11 C8 C4 Z12 RF OUTPUT Z1.25 x.83 Microstrip Z2*.95 x.83 Microstrip Z3*.25 x.83 Microstrip Z4*.315 x.83 Microstrip Z5.365 x 1. Microstrip Z6.68 x.8 Microstrip Z7, Z8.115 x 1. Microstrip Z9.485 x 1. Microstrip Z*.5 x.83 Microstrip Z11*.895 x.83 Microstrip Z12.25 x.83 Microstrip Z13.2 x.8 Microstrip PCB Taconic TLX8-3,.3, ε r = 2.55 * Variable for tuning Figure 1. MRF6S186MR1(MBR1) Test Circuit Schematic 19 MHz Table 6. MRF6S186MR1(MBR1) Test Circuit Component Designations and Values 19 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pf B Chip Capacitors B6R8CW ATC C5 1.5 pf B Chip Capacitor B1R5BW ATC C6 1.8 pf B Chip Capacitor B1R8BW ATC C7, C8 1 pf B Chip Capacitors B1RBW ATC C9, C μf Chip Capacitors (222) C575X5R1H6MT TDK C11 22 μf, 63 V Electrolytic Capacitor, Radial Philips R1, R2 k, 1/4 W Chip Resistors (126) R3, 1/4 W Chip Resistor (126) 4

5 C11 V GS R1 V DS R2 C1 C2 C5 R3 C7 C9 C C3 C6 CUT OUT AREA C8 MRF6S186N/NB Rev. Figure 2. MRF6S186MR1(MBR1) Test Circuit Component Layout 19 MHz C4 5

6 TYPICAL CHARACTERISTICS 19 MHz G ps, POWER GAIN (db) I DQ = 9 ma 75 ma 6 ma 45 ma 3 ma G ps, POWER GAIN (db) G ps, POWER GAIN (db) η D G ps IRL f, FREQUENCY (MHz) I DQ = 6 ma Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus P out = 6 Watts IRL G ps f, FREQUENCY (MHz) I DQ = 6 ma Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus P out = 3 Watts η D f = 196 MHz P out, OUTPUT POWER (WATTS) Figure 5. Power Gain versus Output Power G ps, POWER GAIN (db) V 34 η D, DRAIN EFFICIENCY (%) η D, DRAIN EFFICIENCY (%) 16 V IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) 2 V 24 V P out, OUTPUT POWER (WATTS) CW I DQ = 6 ma f = 196 MHz 26 V V DD = 32 V Figure 6. Power Gain versus Output Power 6

7 TYPICAL CHARACTERISTICS 19 MHz G ps, POWER GAIN (db) EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL 4 khz (dbc) T C = 3 C 25 C 85 C I DQ = 6 ma f = 196 MHz 3 C P out, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Drain Efficiency versus CW Output Power T C = 3 C, 25 C I DQ = 45 ma 5 f = 196 MHz 85 C 8 4 η D G ps P out, OUTPUT POWER (WATTS) AVG. Figure 9. Error Vector Magnitude and Drain Efficiency versus Output Power I DQ = 45 ma f = 196 MHz 85 C T C = 3 C 25 C η D EVM 85 C 25 C 85 C 3 C 25 C P out, OUTPUT POWER (WATTS) AVG. Figure 11. Spectral Regrowth at 4 khz versus Output Power 2 η D, DRAIN EFFICIENCY (%) η D, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) SPECTRAL 4 khz AND 6 khz (dbc) SPECTRAL 6 khz (dbc) I DQ = 45 ma f, FREQUENCY (MHz) Figure 8. Error Vector Magnitude versus Frequency SR 4 khz SR 6 khz W Avg. W Avg. 35 W Avg. 25 W Avg. P out = 35 W Avg. 25 W Avg. W Avg. P out = 35 W Avg f, FREQUENCY (MHz) Figure. Spectral Regrowth at 4 khz and 6 khz versus Frequency I DQ = 45 ma f = 196 MHz T C = 85 C 3 C 22 I DQ = 45 ma f = 196 MHz W Avg. 25 C P out, OUTPUT POWER (WATTS) AVG. Figure 12. Spectral Regrowth at 6 khz versus Output Power 7

8 TYPICAL CHARACTERISTICS 1.E+9 MTTF FACTOR (HOURS X AMPS 2 ) 1.E+8 1.E+7 1.E T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours x ampere 2 drain current. Life tests at elevated temperatures have correlated to better than ±% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature 2 8

9 Z o = Ω f = 193 MHz Z source Z load f MHz f = 199 MHz f = 193 MHz f = 199 MHz, I DQ = 6 ma, P out = 6 W CW Z source Ω Z load Ω j j j j j j4.54 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance 19 MHz 9

10 V BIAS R1 R2 C1 Z6 C2 C C11 + C12 V SUPPLY Z14 RF INPUT Z1 C3 Z2 C5 Z3 R3 C6 Z4 Z5 Z7 C7 Z8 DUT Z9 Z Z11 C8 C9 Z12 C4 Z13 RF OUTPUT Z1.25 x.83 Microstrip Z2*.32 x.83 Microstrip Z3*.66 x.83 Microstrip Z4*.535 x.83 Microstrip Z5.365 x 1. Microstrip Z6.86 x.8 Microstrip Z7, Z8.115 x 1. Microstrip Z9.485 x 1. Microstrip Z*.42 x.83 Microstrip Z11*.23 x.83 Microstrip Z12*.745 x.83 Microstrip Z13.25 x.83 Microstrip Z14.64 x.8 Microstrip PCB Taconic TLX8-3,.3, ε r = 2.55 * Variable for tuning Figure 15. MRF6S186MR1(MBR1) Test Circuit Schematic 18 MHz Table 7. MRF6S186MR1(MBR1) Test Circuit Component Designations and Values 18 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pf B Chip Capacitors B6R8CW ATC C5.8 pf 6B Chip Capacitor 6BR8BW ATC C6, C9.5 pf 6B Chip Capacitors 6BR5BW ATC C7 2.2 pf 2B Chip Capacitor 2B2R2BW ATC C8 1.5 pf 6B Chip Capacitor 6B1R5BW ATC C, C11 μf Chip Capacitors (222) C575X5R1H6MT TDK C12 22 μf, 63 V Electrolytic Capacitor, Radial Philips R1, R2 k, 1/4 W Chip Resistors (126) R3, 1/4 W Chip Resistor (126)

11 V GS R1 C12 V DS R2 C1 C2 C6 R3 C C11 C3 C5 C7 CUT OUT AREA C8 C9 C4 MRF6S186N/NB Rev. Figure 16. MRF6S186MR1(MBR1) Test Circuit Component Layout 18 MHz 11

12 TYPICAL CHARACTERISTICS 18 MHz EVM, ERROR VECTOR MAGNITUDE (% rms) W Avg. 182 G ps, POWER GAIN (db) G ps, POWER GAIN (db) η D IRL I DQ = 6 ma f, FREQUENCY (MHz) Figure 17. Power Gain, Input Return Loss and Drain Efficiency versus P out = 6 Watts G ps f, FREQUENCY (MHz) G ps IRL 35 I DQ = 6 ma Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus P out = 3 Watts P out = 35 W Avg W Avg. 186 f, FREQUENCY (MHz) 188 η D I DQ = 45 ma 19 Figure 19. Error Vector Magnitude versus Frequency 192 EVM, ERROR VECTOR MAGNITUDE (% rms) I DQ = 45 ma f = 186 MHz η D, DRAIN EFFICIENCY (%) η D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) η D T C = 25 C EVM P out, OUTPUT POWER (WATTS) AVG. Figure 2. Error Vector Magnitude and Drain Efficiency versus Output Power η D, DRAIN EFFICIENCY (%) 12

13 TYPICAL CHARACTERISTICS 18 MHz SPECTRAL 4 khz (dbc) SPECTRAL 4 khz AND 6 khz (dbc) T C = 25 C P out = 35 W Avg. 25 W Avg. 15 W Avg. P out, OUTPUT POWER (WATTS) AVG. 35 W Avg. 25 W Avg. W Avg. SR 4 khz SR 6 khz I DQ = 45 ma Figure 21. Spectral Regrowth at 4 khz and 6 khz versus Frequency I DQ = 45 ma f = 186 MHz Figure 22. Spectral Regrowth at 4 khz versus Output Power f, FREQUENCY (MHz) SPECTRAL 6 khz (dbc) T C = 25 C P out, OUTPUT POWER (WATTS) AVG. I DQ = 45 ma f = 186 MHz Figure 23. Spectral Regrowth at 6 khz versus Output Power 13

14 Z o = Ω f = 188 MHz f MHz Z load f = 185 MHz f = 188 MHz Z source Ω j j j7.21 f = 185 MHz Z source, I DQ = 6 ma, P out = 65 W CW Z load Ω j j j4.45 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 24. Series Equivalent Source and Load Impedance 18 MHz 14

15 NOTES 15

16 PACKAGE DIMENSIONS B E1 2X E3 A GATE LEAD DRAIN LEAD D1 D 4X e aaa 4X b1 M C A A2 NOTE 7 A1 2X D2 c1 D3 H 4 3 DATUM PLANE F ZONE J 2X E 2X E2 E5 E4 E5 BOTTOM VIEW C SEATING PLANE PIN 5 A NOTE CASE ISSUE C TO-27 WB-4 PLASTIC MRF6S186MR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M DATUM PLANE H IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS D" AND E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS.6 PER SIDE. DIMENSIONS D" AND E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE H. 5. DIMENSION b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.5 TOTAL IN EXCESS OF THE b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. 7. DIMENSION A2 APPLIES WITHIN ZONE J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A A D D D D E E E E E E F.25 BSC.64 BSC b c e.6 BSC 2.69 BSC aaa.4. STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE 16

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20 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH37 13 N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 545 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 26. All rights reserved. Document Number: MRF6S186 2 Rev. 2, 5/26 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. For further information, see or contact your Freescale sales representative. For information on Freescale s Environmental Products program, go to