ARCHIVE INFORMATION. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5. Freescale Semiconductor

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1 Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 32 volt digital television transmitter equipment. Typical Broadband DVBT OFDM MHz, 32 Volts, I DQ = 2.0 A, 8K Mode, 64 QAM Output Power 45 Watts Avg. Power Gain 16.7 db Efficiency 21% ACPR -58 dbc Typical Broadband ATSC 8VSB MHz, 32 Volts, I DQ = 2.0 A Output Power 80 Watts Avg. Power Gain 16.5 db Efficiency 27.5% IMD dbc Internally Input and Output Matched for Ease of Use Integrated ESD Protection Capable of Handling :1 32 Vdc, 860 MHz, 45 Watts DVBT OFDM Output Power Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Rating Symbol Value Unit Drain-Source Voltage V DSS -0.5, +65 Vdc Gate-Source Voltage V GS -0.5, +15 Vdc Drain Current - Continuous I D 17 Adc Total Device T C = 25 C Derate above 25 C P D Storage Temperature Range T stg -65 to +150 C Operating Junction Temperature T J 200 C Table 2. Thermal Characteristics MRF377 MRF377R3 MRF377R MHz, 240 W, 32 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375G-04, STYLE 1 NI-860C3 W W/ C Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 0.36 C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model Machine Model Charge Device Model 1. Each side of device measured separately. 1 (Minimum) M3 (Minimum) 7 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., 2004, All rights reserved. 1

2 Table 4. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Drain-Source Breakdown Voltage (V GS = 0 Vdc, I D = μa) Zero Gate Voltage Drain Current (V DS = 32 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (V DS = Vdc, I D = 200 μa) V (BR)DSS 65 Vdc I DSS 1 μadc I GSS 1 μadc V GS(th) 2.8 Vdc Gate Quiescent Voltage (V DS = 32 Vdc, I D = 225 ma) Drain-Source On-Voltage (V GS = Vdc, I D = 3 A) Dynamic Characteristics (1) Reverse Transfer Capacitance (V DS = 28 Vdc, V GS = 0, f = 1 MHz) Functional Characteristics (In DVBT OFDM Single-Channel, Narrowband Fixture, 50 ohm system) (2) Common Source Power Gain (, P out = 45 W Avg., I DQ = 2 x 00 ma, f = 860 MHz) Drain Efficiency (, P out = 45 W Avg., I DQ = 2 x 00 ma, f = 860 MHz) Adjacent Channel Power Ratio (, P out = 45 W Avg., I DQ = 2 x 00 ma, f = 860 MHz) Typical Characteristics (In DVBT OFDM Single-Channel, Broadband Fixture, 50 ohm system) (2) Common Source Power Gain (, P out = 45 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Drain Efficiency (, P out = 45 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz V GS(Q) 3.5 Vdc V DS(on) 0.27 Vdc C rss 3.2 pf G ps db η % ACPR dbc G ps η db % Adjacent Channel Power Ratio (, P out = 45 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz ACPR dbc 1. Each side of device measured separately. 2. Measured in push-pull configuration. 2

3 Table 4. Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Characteristics (In ATSC 8VSB Single-Channel, Broadband Fixture, 50 ohm system) (1) Common Source Power Gain (, P out = 80 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz G ps db Drain Efficiency (, P out = 80 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz Intermodulation Distortion (, P out = 80 W Avg., I DQ = 2 x 00 ma) f = 470 MHz f = 560 MHz f = 660 MHz f = 760 MHz f = 860 MHz 1. Measured in push-pull configuration. η IMD % dbc 3

4 Table MHz Narrowband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Surface Mount, 11 Ω (0805) Y0 Fair-Rite Balun 1, Balun GHz Xinger Balun 3A412 Anaran C1 33 pf Chip Capacitor (0805) 08055J330JBT AVX / Kyocera C2 2.7 pf Chip Capacitor (0603) 06035J2R7BBT AVX / Kyocera C3 12 pf Chip Capacitor (0805) 08051J120GBT AVX / Kyocera C4, C5 6.8 pf Chip Capacitors (0805) 08051J6R8BBT AVX / Kyocera C6 2.7 pf Chip Capacitor (0805) 0805J2R7BBT AVX / Kyocera C7, C8, C9, C 3.3 pf Chip Capacitors (0805) 08051J3R3BBT AVX / Kyocera C11, C μf, 50 V Chip Capacitors C1825C225J5RAC38 Kemet C13, C14, C15, C μf, 0 V Chip Capacitors C1825C3J1GAC Kemet C17, C μf, 50 V Chip Capacitors C1825C564J5RAC Kemet C19, C20 μf, 50 V Tantalum Chip Capacitors 522Z050/0MTRE Tecate C21, C22, C23, C24 47 μf, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX / Kyocera C25, C μf, 63 V Electrolytic Capacitors NACZF471M63V (18x22) Nippon L1 12 nh Inductor (0603) 0603HC-12NXJB CoilCraft L nh Inductor CoilCraft L3, L4 nh Inductor (0603) 0603HC-NXJB CoilCraft R1, R2 24 Ω, 1/8 W, 5% Chip Resistors (1206) WB1, WB2, WB3, WB4 Brass Wear Shims PCB Arlon 30 mil, ε r = 2.56 DS1152 DS Electronics MRF377 Gate MRF377 Drain C19 V GG C11 V DD C22 C9 C21 C26 Balun 1 C14 L3 C18 R1 B1 C15 Balun 2 C2 L1 C1 WB2 WB1 C3 WB4 WB3 C4 C5 C6 L2 C7 C8 R2 B2 C16 C13 L4 C17 C23 C25 C24 C V GG C12 V DD C20 DS1152 A Rev 0 DS1152 B Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure MHz Narrowband Test Circuit Component Layout 4

5 TYPICAL NARROWBAND CHARACTERISTICS G ps, POWER GAIN (db) INTERMODULATION DISTORTION (dbc) IMD, G ps I DQ = 2000 ma f1 = MHz, f2 = MHz 0 P out, OUTPUT POWER (WATTS) PEP Figure 2. Two- Tone Power Gain versus Output Power 3rd Order 5th Order 7th Order I DQ = 2000 ma f1 = MHz, f2 = MHz 0 P out, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion Products versus Output Power G ps, POWER GAIN (db) 19 INTERMODULATION DISTORTION (dbc) IMD, η, DRAIN EFFICIENCY (%) ma 1800 ma I DQ = 1400 ma 2000 ma ma f1 = MHz, f2 = MHz P out, OUTPUT POWER (WATTS) PEP Figure 3. Third Order Intermodulation Distortion versus Output Power I DQ = 2000 ma f1 = MHz, f2 = MHz G ps η I DQ = 2000 ma 20 f1 = MHz, f2 = MHz 14 IMD P out, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain, Efficiency and IMD versus Output Power 5 0 P out, OUTPUT POWER (WATTS) PEP Figure 5. Two- Tone Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%) INTERMODULATION DISTORTION (dbc) IMD, η 5

6 f = 845 MHz f = 875 MHz Z load Z source f = 875 MHz f = 845 MHz V DD = 32 V, I DQ = 2 x 00 ma, P out = 45 W Avg., DVBT OFDM f MHz Z source Ω j j j5.33 Z load Ω j j j6.06 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test Z o = Ω Output Matching Network + Z source Z load Figure MHz Narrowband Series Equivalent Source and Load Impedance 6

7 Table MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Surface Mount, 30 Ω (0603) Y0 Fair-Rite Balun 1, Balun 2 Rogers 3.006, ε r = 6.06, 1 oz Cu DS46 DS Electronics C1 12 pf Chip Capacitor (0603) 06035J120GBT AVX / Kyocera C2, C5 12 pf Chip Capacitors (0805) 08051J120GBT AVX / Kyocera C3 3.9 pf Chip Capacitor (0805) 08051J3R9BBT AVX / Kyocera C4, C7, C12, C15, C pf Chip Capacitors (0805) 08051J8R2BBT AVX / Kyocera C6 3.3 pf Chip Capacitor (0805) 08051J3R3BBT AVX / Kyocera C pf Variable Capacitor 27283PC Gigatronics C9, C 3.3 pf Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera C11, C14 pf Chip Capacitor (0805) 08051J0GBT AVX / Kyocera C pf Chip Capacitor (0805) 08051J4R7BBT AVX / Kyocera C pf Chip Capacitor (0603) 06035J2R2BBT AVX / Kyocera C pf Chip Capacitor (0805) 08051J2R2BBT AVX / Kyocera C19, C20, C21, C22 47 μf, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX C23, C μf, 50 V Ceramic Chip Capacitors C1825C225J5RAC38 Kemet C24, C25, C27, C μf, 0 V Ceramic Chip Capacitors C1825C3J1GAC Kemet C28, C μf, 50 V Ceramic Chip Capacitors C1825C564J5GAC Kemet C31, C32 μf, 50 V Chip Capacitors 522Z-050/0MTRE Tecate C33, C μf, 63 V Electrolytic Capacitors SME63VB471M12X25LL United Chemi-Con L1, L2 15 nh Inductors (0603) L GGW003 AVX L3, L4 12 nh Inductors (0603) 0603HC-12NHJBU CoilCraft L5, L6 8 nh Coil Inductors A03T-5 CoilCraft L7 22 nh Coil Inductor B07T-5 CoilCraft L nh Coil Inductor A05T-5 CoilCraft R1, R Ω, 1/16 W, 1% Chip Resistors (0603) PCB Gate, PCB Drain PCB Motherboard w/integrated Daughterboard, Rogers 3003, ε r = 3.03, 0.5 oz Cu DS47 DS Electronics 7

8 C34 V GG C20 C19 V DD L3 R1 C9 C32 C8 V GG C7 L8 Balun 1 C6 C21 C23 C5 C26 C24 C4 C25 C22 B1 C3 C2 B2 L4 R2 C L1 C1 L2 L5 L6 C27 C11 C13 C12 C29 C31 C28 C14 C30 C15 Balun 2 DS47 Rev 4 DS47 Rev 4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Topside View Multilayer Balun Mounting Detail C16 C17 L7 C33 C18 V DD Upside Down View Figure MHz Broadband Test Circuit Component Layout 8

9 TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS G ps, POWER GAIN (dbc) G ps, POWER GAIN (db) P out, OUTPUT POWER (WATTS) AVG. Figure. Single- Channel DVBT OFDM Broadband Performance Power Gain versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dbc) MHz 660 MHz 860 MHz 470 MHz 760 MHz 470 MHz 660 MHz 860 MHz I DQ = 2000 ma 8K Mode DVBT OFDM 64 QAM Data Carrier Modulation 5 Symbols G ps η 20 14, P out = 45 W (Avg.), I DQ = 2000 ma K Mode DVBT OFDM 64 QAM Data Carrier Modulation Symbols ACPR f, FREQUENCY (MHz) Figure 9. Single- Channel DVBT OFDM Broadband Performance, I DQ = 2000 ma 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 760 MHz 560 MHz P out, OUTPUT POWER (WATTS) AVG. Figure 12. Single- Channel DVBT OFDM Broadband Performance Adjacent Channel Power Ratio versus Output Power 0 η, DRAIN EFFICIENCY (%) (db) ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) I DQ = 2000 ma 8K Mode OFDM 64 QAM Data Carrier Modulation 5 Symbols 560 MHz 760 MHz P out, OUTPUT POWER (WATTS) AVG. 860 MHz 470 MHz 660 MHz 0 Figure 11. Single- Channel DVBT OFDM Broadband Performance Drain Efficiency versus Output Power 5 4 khz BW 7.61 MHz f, FREQUENCY (MHz) 4 khz BW Figure 13. 8K Mode DVBT OFDM Spectrum 5 9

10 TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS G ps, POWER GAIN (dbc) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 560 MHz 660 MHz 470 MHz 860 MHz 760 MHz G ps, POWER GAIN (db) G ps η P out = 80 W (Avg.) I DQ = 2000 ma ATSC 8VSB ACPR f, FREQUENCY (MHz) Figure 14. Single- Channel ATSC 8VSB Broadband Performance ACPR, ADJACENT CHANNEL POWER RATIO η, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) AVG. I DQ = 2000 ma ATSC 8VSB Figure 15. Single- Channel ATSC 8VSB Broadband Performance Power Gain versus Output Power MHz 660 MHz 760 MHz 860 MHz 560 MHz P out, OUTPUT POWER (WATTS) AVG. I DQ = 2000 ma ATSC 8VSB Figure 17. Single- Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power 0 η, DRAIN EFFICIENCY (%) (db) I DQ = 2000 ma ATSC 8VSB 560 MHz 660 MHz P out, OUTPUT POWER (WATTS) AVG. 470 MHz 860 MHz 760 MHz Figure 16. Single- Channel ATSC 8VSB Broadband Performance Drain Efficiency versus Output Power IMRL 3.25 MHz Offset f, FREQUENCY (MHz) Reference Point 3.25 MHz Offset Figure 18. ATSC 8VSB Spectrum IMRU 4.0

11 f = 470 MHz f = 470 MHz Z load Z source Z o = Ω Z o = Ω f = 860 MHz f = 860 MHz Optimized for V DD = 32 V, I DQ = 2 x 00 ma, P out = 45 W Avg., DVBT OFDM f MHz Z source Ω j j j j6.28 Z load Ω j j j j j j5.45 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test Output Matching Network + Z source Z load Figure MHz Broadband Series Equivalent Source and Load Impedance 11

12 NOTES 12

13 NOTES 13

14 NOTES 14

15 PACKAGE DIMENSIONS ccc M R (LID) T A M B M 4X K J G 4 L X Q bbb M B (FLANGE) T A M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M DIMENSION H TO BE MEASURED (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF (28.96) BASED ON 3M SCREW. S (INSULATOR) bbb M T A M E B M H A 4X D bbb M T A A M ccc M T A M N (LID) M (INSULATOR) bbb M T A M B M B M B M B F C CASE 375G-04 ISSUE E NI-860C3 T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 1.0 BSC BSC H J BSC BSC K L BSC.8 BSC M N Q R S bbb 0.0 REF 0.25 REF ccc REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE 15

16 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 2004, All rights reserved. Document Number: MRF Rev. 1, 12/2004