ARCHIVE INFORMATION. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5. Freescale Semiconductor

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1 Technical Data Document Number: MRF6P3300H Rev. 2, /08 MRF6P3300HR3/HR replaced by MRFE6P3300HR3/HR. Refer to Device Migration PCN1289 for more details. RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 32 volt analog or digital television transmitter equipment. Typical Narrowband Two-Tone 860 MHz: V DD = 32 Volts, I DQ = 1600 ma, P out = 270 Watts PEP Power Gain.2 db Drain Efficiency 44.1% IMD.8 dbc Typical Narrowband DVB-T OFDM 860 MHz: V DD = 32 Volts, I DQ = 1600 ma, P out = 60 Watts Avg., 8K Mode, 64 QAM Power Gain.4 db Drain Efficiency 29% 3.9 MHz Offset -7 khz Bandwidth Capable of Handling :1 32 Vdc, 860 MHz, 300 Watts CW Output Power Features Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use Designed for Push-Pull Operation Only Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R3 Suffix = 20 Units per 6 mm, 13 inch Reel. R Suffix = 0 Units per 6 mm, 13 inch Reel. Table 1. Maximum Ratings MHz, 300 W, 32 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 37G-04, STYLE 1 NI-860C3 Rating Symbol Value Unit Drain-Source Voltage V DSS -0., 68 Vdc Gate-Source Voltage V GS -0., 12 Vdc Storage Temperature Range T stg - 6 to 10 C Case Operating Temperature T C 10 C Operating Junction Temperature (1,2) T J 22 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 300 W CW Case Temperature 82 C, 2 W CW Case Temperature 79 C, 0 W CW Case Temperature 81 C, 60 W CW R θjc C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN19, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN19., Inc., 0-06, 08. All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A11) Charge Device Model (per JESD22-C1) Class 3B (Minimum) C (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T C = 2 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (4) (V DS = 68 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (V DS = 32 Vdc, V GS = 0 Vdc) I DSS μadc I DSS 1 μadc Gate-Source Leakage Current (V GS = Vdc, V DS = 0 Vdc) On Characteristics (1) Gate Threshold Voltage (V DS = Vdc, I D = 30 μadc) Gate Quiescent Voltage (V DD = 32 Vdc, I D = 1600 madc, Measured in Functional Test) Drain-Source On-Voltage (V GS = Vdc, I D = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (V DS = 32 Vdc ± 30 1 MHz, V GS = 0 Vdc) I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 1.4 pf Functional Tests (3) (In Freescale Narrowband Test Fixture, 0 ohm system) V DD = 32 Vdc, I DQ = 1600 ma, P out = 270 W PEP, f1 = 87 MHz, f2 = 863 MHz Power Gain G ps db Drain Efficiency η D % Intermodulation Distortion IMD.8-28 dbc Input Return Loss IRL db P 1 db Compression Point, CW (f = 860 MHz) 1. Each side of the device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push-pull configuration. 4. Drains are tied together internally as this is a total device value. P1dB 3 W 2

3 R1 V BIAS R3 COAX1 C1 C2 C3 B1 Z19 Z C23 C1 C16 C18 C17 COAX3 V SUPPLY Z4 Z8 Z12 Z14 Z16 RF INPUT Z1 C4 Z2 Z3 Z6 C6 Z7 DUT C C11 C14 C12 Z18 RF OUTPUT V BIAS COAX2 C9 C C7 C8 R2 B2 Z x Microstrip Z2, Z x 0.1 Microstrip Z4, Z x 0.08 Microstrip Z6, Z x Microstrip Z8, Z x 0.07 Microstrip Z, Z x 0.10 Microstrip Z Z9 Z13 Z1 Z17 Figure MHz Narrowband Test Circuit Schematic Table MHz Narrowband Test Circuit Component Designations and Values Z Z11 C24 C19 C13 C C22 COAX4 C21 V SUPPLY Z12, Z x 0.07 Microstrip Z14, Z x 0.43 Microstrip Z16, Z x 0.21 Microstrip Z x Microstrip Z19, Z x 0.16 Microstrip PCB Arlon CuClad 20GX , 0.030, ε r = 2. Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short Fair-Rite C1, C9 1.0 μf, 0 V Tantulum Chip Capacitors T491CK00AT Kemet C2, C7, C17, C μf, 0 V Chip Capacitors CDR33BX4AKYS Kemet C3, C8, C16, C 00 pf Chip Capacitors ATC0B2JT0XT ATC C4, C, C13, C14 0 pf Chip Capacitors ATC0B1JT00XT ATC C6, C pf Chip Capacitors ATC0B8R2JT00XT ATC C 9.1 pf Chip Capacitor ATC0B9R1BT00XT ATC C pf Chip Capacitor ATC0B1R8BT00XT ATC C1, C19 47 μf, 0 V Electrolytic Capacitors EMVY00ADA470MF80G Nippon C18, C μf, 63 V Electrolytic Capacitors ESME630ELL471MK2S United Chemi-Con C23, C24 22 pf Chip Capacitors ATC0B2FT00XT ATC Coax1, 2, 3, 4 0 Ω, Semi Rigid Coax, 2.06 Long UT-141A-TP Micro-Coax R1, R2 Ω, 1/4 W Chip Resistors CRCW16R0FKEA Vishay R3 1 kω, 1/4 W Chip Resistor CRCW1601FKEA Vishay 3

4 C1 C1 C18 C23 V GG C2 C3 B1 V DD R3 R1 C16 C17 COAX1 COAX3 V GG C9 MRF6P92, Rev. 2 COAX2 C4 C6 C R2 C7 C8 B2 C24 VDD C19 Figure MHz Narrowband Test Circuit Component Layout CUT OUT AREA C14 C C11 C12 C13 COAX4 C C21 C22 4

5 TYPICAL NARROWBAND CHARACTERISTICS ma 00 ma 1600 ma 10 ma I DQ = 800 ma ACPR f, FREQUENCY (MHz) Figure 3. Single-Carrier OFDM Broadband 60 Watts Avg V DD = 32 Vdc, P out = 1 W (Avg.) I DQ = 1600 ma, 8K Mode OFDM 64 QAM Data Carrier Modulation, Symbols 830 ACPR 840 V DD = 32 Vdc, P out = 60 W (Avg.) I DQ = 1600 ma, 8K Mode OFDM 64 QAM Data Carrier Modulation Symbols f, FREQUENCY (MHz) G ps IRL 880 IRL 890 η D G ps η D, DRAIN EFFICIENCY (%) -4 - Figure 4. Single-Carrier OFDM Broadband 1 Watts Avg. V DD = 32 Vdc f1 = 87 MHz, f2 = 863 MHz Figure. Two-T one Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) η D ACPR (dbc) η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) IRL, INPUT RETURN LOSS (db) V DD = 32 Vdc, f1 = 87 MHz, f2 = 863 MHz I DQ = 2400 ma 00 ma 800 ma 1600 ma 10 ma Figure 6. Third Order Intermodulation Distortion versus Output Power

6 TYPICAL NARROWBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, I DQ = 1600 ma, f1 = 87 MHz f2 = 863 MHz, Two-Tone Measurements th Order 3rd Order 7th Order Figure 7. Intermodulation Distortion Products versus Output Power P out, OUTPUT POWER (dbm) η D, DRAIN EFFICIENCY (%), P3dB =.87 dbm ( W) P1dB =. dbm ( W) IMD, INTERMODULATION DISTORTION (dbc) P6dB = 6.28 dbm (424.4 W) V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma Two-Tone Measurements, f = 860 MHz 3rd Order th Order 7th Order P in, INPUT POWER (dbm) Figure 9. Pulsed CW Output Power versus Input Power TWO-T ONE SPACING (MHz) 1 40 Figure 8. Intermodulation Distortion Products versus Tone 860 MHz Actual Ideal V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 860 MHz 4 40 V DD = 32 Vdc, I DQ = 1600 ma, f = 860 MHz 2 C 8K Mode OFDM, 64 QAM Data Carrier Modulation, Symbols -44 T C = 8 C 2 C 3 C η D ACPR C 2 C -60 G ps 8 C P out, OUTPUT POWER (WATTS) AVG. Figure. Single-Carrier DVB-T OFDM ACPR, Power Gain and Drain Efficiency versus Output Power 44 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) 6

7 TYPICAL NARROWBAND CHARACTERISTICS C 22 G 60 ps 2 C T C = C 21 8 C C 8 C η D V DD = 32 Vdc I DQ = 1600 ma f = 860 MHz 0 P out, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) η D, DRAIN EFFICIENCY (%) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD = 32 Vdc, P out = 270 W PEP, and η D = 44.1%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature V DD = 24 V P out, OUTPUT POWER (WATTS) CW I DQ = 1600 ma f = 860 MHz 28 V 32 V Figure 12. Power Gain versus Output Power

8 DIGITAL TEST SIGNALS PROBABILITY (%) PROBABILITY (%) K Mode DVB-T OFDM 64 QAM Data Carrier Modulation Symbols PEAK-T O-AVERAGE (db) Figure 14. Single-Carrier DVB-T OFDM ATSC 8VSB PEAK-T O-A VERAGE (db) Figure 16. Single-Carrier ATSC 8VSB 12 (db) (db) khz BW 7.61 MHz ACPR Measured at 3.9 MHz Offset from Center Frequency f, FREQUENCY (MHz) khz BW Figure 1. 8K Mode DVB-T OFDM Spectrum IMRL 3.2 MHz Offset f, FREQUENCY (MHz) Reference Point 3.2 MHz Offset Figure 17. ATSC 8VSB Spectrum IMRU 4.0 8

9 f = 890 MHz Z load f = 830 MHz Z o = Ω f = 890 MHz V DD = 32 Vdc, I DQ = 1600 ma, P out = 270 W PEP f MHz Z source Z source Ω j j j j4.32 f = 830 MHz Z load Ω j j j j j j0.43 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network Device Under Test - Output Matching Network - Z source Z load Figure MHz Narrowband Series Equivalent Source and Load Impedance 9

10 R2 Z6 V BIAS R1 C28 C26 B1 C3 C C7 COAX1 COAX3 Z2 Z4 Z8 Z Z12 RF INPUT Z1 C1 C9 C Z3 Z Z9 Z11 Z13 V BIAS COAX2 C29 C27 DUT C2 R3 B2 Z14 C11 Z1 Z7 Z16 C12 Z17 COAX4 C4 C6 C8 COAX Z18 C13 Z19 C18 C16 Z22 Z23 C14 C Z Z24 Z2 C22 C24 COAX7 V SUPPLY Z26 RF OUTPUT COAX6 C21 Z21 COAX8 V SUPPLY C19 C17 C1 C23 C2 Z x Microstrip Z2, Z x Microstrip Z4, Z x Microstrip Z6, Z x 0.01 Microstrip Z8, Z x 0.0 Microstrip Z, Z x Microstrip Z12, Z x Microstrip Z14, Z x 0.4 Microstrip Z16, Z x 0.4 Microstrip Z18, Z x Microstrip Z, Z x Microstrip Z22, Z x Microstrip Z24, Z x Microstrip Z x Microstrip PCB Arlon CuClad 20GX , 0.030, ε r = 2. Figure MHz Broadband Test Circuit Schematic

11 Table MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Short Fair-Rite C1, C2, C, C21 43 pf Chip Capacitors ATC700B430FT00XT ATC C3, C4, C14, C1 0 μf, 0 V Electrolytic Capacitors 1D7M00BB6AE3 Vishay C, C6, C16, C17 2 nf, 0 V Chip Capacitors C1812C224KRAC Kemet C7, C8, C18, C μf, 0 V Chip Capacitors C12C3J1RAC Kemet C9, C pf Variable Capacitors, Gigatrim 27291SL Johanson C 1 pf 600B Chip Capacitor ATC600S10FT20XT ATC C11 16 pf 600B Chip Capacitor ATC600B160FT20XT ATC C pf 600B Chip Capacitor ATC600B4R3BT20XT ATC C22, C μf, 63 V Electrolytic Capacitors EMVY630GTR471MLN0S Nippon C24, C2, C26, C μf, 0 V Chip Capacitors CDR33BX4AKYS Kemet C28, C29 μf, 0 V Electrolytic Capacitors ECE-V1HA0SP Nippon Chemi-Con Coax1, 2, 7, 8 0 Ω, Semi Rigid Coax, 3.00 Long UT-141C-SP Micro-Coax Coax3, 4,, 6 2 Ω, Semi Rigid Coax, 3.00 Long UT-141C-2 Micro-Coax R1 1 kω, 1/8 W Resistor CRCW1601FKEA Vishay R2, R3 Ω, 1/8 W Resistors CRCW16R0FKEA Vishay MRF6P93300 C28 R1 C26 C24 V GG V DD COAX3 COAX COAX1 R2 B1 COAX7 Rev. 3 C1 C2 C3 C4 C C7 C8 C6 C9 C CUT OUT AREA C11 C12 C16 C18 C13 C19 C17 C14 C1 C C21 C22 COAX2 R3 V GG B2 C27 COAX4 COAX6 C2 V DD COAX8 C29 C23 Figure MHz Broadband Test Circuit Component Layout 11

12 TYPICAL TWO-TONE BROADBAND CHARACTERISTICS η D, DRAIN EFFICIENCY (%), η D IMD V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma G ps f, FREQUENCY (MHz) Figure 21. Two-T one Broadband P out = 270 Watts PEP IMD, INTERMODULATION DISTORTION (dbc) 12

13 TYPICAL TWO-TONE BROADBAND CHARACTERISTICS I DQ = 2400 ma I DQ = 2400 ma ma 1600 ma 10 ma ma 1600 ma 10 ma ma Figure 22. Two-T one Power Gain versus Output 473 MHz I DQ = 2400 ma 00 ma 1600 ma 10 ma 800 ma V DD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz V DD = 32 Vdc, f1 = 67 MHz, f2 = 663 MHz Figure 24. Two-T one Power Gain versus Output 660 MHz I DQ = 2400 ma 00 ma 1600 ma 10 ma ma Figure 23. Two-T one Power Gain versus Output 60 MHz I DQ = 2400 ma 00 ma 1600 ma 10 ma 800 ma 800 ma V DD = 32 Vdc, f1 = 84 MHz, f2 = 860 MHz Figure 26. Two-T one Power Gain versus Output 87 MHz V DD = 32 Vdc, f1 = 7 MHz, f2 = 63 MHz V DD = 32 Vdc f1 = 77 MHz, f2 = 763 MHz Two-Tone Measurements 6 MHz Tone Spacing Figure 2. Two-T one Power Gain versus Output 760 MHz 13

14 TYPICAL TWO-TONE BROADBAND CHARACTERISTICS IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) I DQ = 800 ma 10 ma 2400 ma 1600 ma 00 ma Figure 27. Third Order Intermodulation Distortion versus Output 473 MHz I DQ = 800 ma 10 ma V DD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz V DD = 32 Vdc, f1 = 67 MHz, f2 = 663 MHz 2400 ma Figure 29. Third Order Intermodulation Distortion versus Output 660 MHz IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) 00 ma 1600 ma IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) I DQ = 800 ma 10 ma 00 ma 1600 ma IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) ma I DQ = 800 ma 10 ma 1600 ma 00 ma V DD = 32 Vdc, f1 = 7 MHz, f2 = 63 MHz 0 Figure 28. Third Order Intermodulation Distortion versus Output 60 MHz I DQ = 800 ma 10 ma 2400 ma 00 ma 1600 ma V DD = 32 Vdc, f1 = 84 MHz, f2 = 860 MHz Figure 31. Third Order Intermodulation Distortion versus Output 87 MHz 2400 ma V DD = 32 Vdc, f1 = 77 MHz, f2 = 763 MHz 0 Figure 30. Third Order Intermodulation Distortion versus Output 760 MHz

15 TYPICAL TWO-TONE BROADBAND CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma Two-Tone Measurements f1 = 470 MHz, f2 = 470 MHz Tone Spacing 3rd Order th Order 7th Order TWO-T ONE SPACING (MHz) Figure 32. Intermodulation Distortion Products versus Tone 470 MHz V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma Two-Tone Measurements, f = 660 MHz 3rd Order th Order 7th Order TWO-T ONE SPACING (MHz) Figure 34. Intermodulation Distortion Products versus Tone 660 MHz IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) IMD, INTERMODULATION DISTORTION (dbc) V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma f1 = 860 MHz - Tone Spacing, f2 = 860 MHz 3rd Order th Order 7th Order V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma Two-Tone Measurements, f = 60 MHz 3rd Order th Order 7th Order TWO-T ONE SPACING (MHz) Figure 33. Intermodulation Distortion Products versus Tone 60 MHz V DD = 32 Vdc, P out = 270 W (PEP), I DQ = 1600 ma Two-Tone Measurements, f = 760 MHz 3rd Order th Order 7th Order Figure 36. Intermodulation Distortion Products versus Tone 860 MHz TWO-T ONE SPACING (MHz) 1 0 TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Tone 760 MHz 1

16 TYPICAL DVB-T OFDM BROADBAND CHARACTERISTICS f = 60 MHz 660 MHz 760 MHz 860 MHz η D, DRAIN EFFICIENCY (%), Figure 38. Single-Carrier DVB-T OFDM Power Gain versus Output Power 30-2 η D V DD = 32 Vdc, I DQ = 1600 ma 8K Mode OFDM, 64 QAM Data Carrier Modulation, Symbols P out, OUTPUT POWER (WATTS) AVG. ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V DD = 32 Vdc, P out = 60 W (Avg.) -7 I DQ = 1600 ma, 8K Mode OFDM G 64 QAM Data Carrier Modulation, Symbols ps f, FREQUENCY (MHz) ACPR Figure 37. Single-Carrier OFDM Broadband 60 Watts Avg. 0 0 η D, DRAIN EFFICIENCY (%) V DD = 32 Vdc, I DQ = 1600 ma 8K Mode OFDM, 64 QAM Data Carrier Modulation, Symbols 760 MHz f = 860 MHz 60 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V DD = 32 Vdc, I DQ = 1600 ma 8K Mode OFDM, 64 QAM Data Carrier Modulation, Symbols P out, OUTPUT POWER (WATTS) AVG. Figure 40. Single-Carrier DVB-T OFDM ACPR versus Output Power 860 MHz P out, OUTPUT POWER (WATTS) AVG. f = 660 MHz 760 MHz 60 MHz 0 0 Figure 39. Single-Carrier DVB-T OFDM Drain Efficiency versus Output Power 660 MHz 16

17 TYPICAL CW BROADBAND CHARACTERISTICS MHz 660 MHz 760 MHz f = 60 MHz V DD = 32 Vdc, I DQ = 1600 ma 860 MHz 0 00 P out, OUTPUT POWER (WATTS) CW Figure 41. CW Power Gain versus Output Power η D, DRAIN EFFICIENCY (%) V DD = 32 Vdc, I DQ = 1600 ma 760 MHz 60 MHz f = 660 MHz 860 MHz 0 00 P out, OUTPUT POWER (WATTS) CW Figure 42. CW Drain Efficiency versus Output Power 470 MHz 17

18 TYPICAL CW BROADBAND CHARACTERISTICS P out, OUTPUT POWER (dbm) P out, OUTPUT POWER (dbm) P1dB = 4.84 dbm ( W) P out, OUTPUT POWER (dbm) P3dB =.49 dbm (33.76 W) P1dB = 3.9 dbm ( W) P in, INPUT POWER (dbm) Figure 44. Pulsed CW Output Power versus Input 60 MHz P1dB = 4.6 dbm ( W) P3dB =.2 dbm ( W) Ideal Actual V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 470 MHz P in, INPUT POWER (dbm) Figure 43. Pulsed CW Output Power versus Input 470 MHz Ideal Actual V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 60 MHz Ideal Actual V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 760 MHz P out, OUTPUT POWER (dbm) P out, OUTPUT POWER (dbm) P1dB = 4.04 dbm (23.67 W) P3dB = 4.88 dbm (307.4 W) Ideal Actual V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 660 MHz P in, INPUT POWER (dbm) Figure 4. Pulsed CW Output Power versus Input 660 MHz P1dB = 4.82 dbm (303.2 W) P3dB =.8 dbm ( W) Ideal Actual V DD = 32 Vdc, I DQ = 1600 ma Pulsed CW, 8 μsec(on), 1 msec(off) f = 860 MHz P in, INPUT POWER (dbm) Figure 46. Pulsed CW Output Power versus Input 760 MHz P in, INPUT POWER (dbm) Figure 47. Pulsed CW Output Power versus Input 860 MHz 18

19 TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS f = 60 MHz 470 MHz 660 MHz 760 MHz 860 MHz η D, DRAIN EFFICIENCY (%), V DD = 32 Vdc, P out = 0 W (Avg.) I DQ = 1700 ma, ATSC 8VSB G ps P out, OUTPUT POWER (WATTS) AVG. η D Figure 49. Single-Carrier ATSC 8VSB Power Gain versus Output Power ACPR f, FREQUENCY (MHz) Figure 48. Single-Carrier ATSC 8VSB Broadband 0 Watts Avg. V DD = 32 Vdc, I DQ = 1700 ma ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V DD = 32 Vdc, I DQ = 1700 ma ATSC 8VSB η D, DRAIN EFFICIENCY (%) MHz P out, OUTPUT POWER (WATTS) AVG ACPR, ADJACENT CHANNEL POWER RATIO (dbc) V DD = 32 Vdc, I DQ = 1700 ma ATSC 8VSB Figure 1. Single-Carrier ATSC 8VSB ACPR versus Output Power 760 MHz 860 MHz P out, OUTPUT POWER (WATTS) AVG. f = 660 MHz 60 MHz 0 0 Figure 0. Single-Carrier ATSC 8VSB Drain Efficiency versus Output Power f = 860 MHz 470 MHz 660 MHz 760 MHz MHz 19

20 TYPICAL PAL B/G BROADBAND CHARACTERISTICS η D, DRAIN EFFICIENCY (%), G ps V DD = 32 Vdc, I DQ = ma Sync Compression Input = 33%, Output = 27% Peak Sync f, FREQUENCY (MHz) η D Figure 2. Peak Sync, Power Gain and Drain Efficiency versus Frequency PEAK SYNC (W)

21 Z load f = 860 MHz f = 470 MHz f = 470 MHz Z source Z o = 2 Ω Z o = 2 Ω f = 860 MHz f MHz V DD = 32 Vdc, I DQ = 1600 ma, P out = 270 W PEP Z source Ω j j j j Z load Ω j j j j j j j j j j j j j j2.49 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network Device Under Test - Output Matching Network - Z source Z load Figure MHz Broadband Series Equivalent Source and Load Impedance 21

22 PACKAGE DIMENSIONS ccc M R (LID) T A M B M 4X K J G 4 L X Q bbb M B (FLANGE) T A M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.M DIMENSION H TO BE MEASURED (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF (28.96) BASED ON 3M SCREW. S (INSULATOR) bbb M T A M E B M H A 4X D bbb M T A A M ccc M T A M N (LID) M (INSULATOR) bbb M T A M B M B M B M B F C CASE 37G-04 ISSUE G NI-860C3 T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G 1.0 BSC BSC H J BSC.397 BSC K L 0.42 BSC.8 BSC M N Q R S bbb 0.0 REF 0.2 REF ccc 0.01 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE. SOURCE 22

23 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN19: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 2 Oct. 08 Listed replacement part and Device Migration notification reference number, p. 1 Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 Operating Junction Temperature increased from 0 C to 22 C in Maximum Ratings table and related Continuous use at maximum temperature will affect MTTF footnote added, p. 1 Corrected V DS to V DD in the RF test condition voltage callout for V GS(Q), On Characteristics table, p. 2 Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 Corrected Z list in Figs. 1, 19, Test Circuit Schematic, p. 3, Updated PCB information to show more specific material details, Figs. 1, 19, Test Circuit Schematic, p. 3, Updated Part Numbers in Tables, 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 11 Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7 Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p. 7 Adjusted scale for Figs , Two-Tone Power Gain versus Output Power, and Figs , Third Order Intermodulation Distortion versus Output Power, to show wider dynamic range, p. 13, 14 Added Product Documentation and Revision History, p

24 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL16 East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 1F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 0022 China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 40 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer's technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 0-06, 08. All rights reserved. Document Number: MRF6P3300H 24 Rev. 2, /08