RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET This 250 W CW RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band. Document Number: MHT1003N Rev. 0, 12/2014 Typical Performance: V DD =32Vdc,I DQ =25mA Frequency (MHz) Signal Type G ps (db) P out (W) 2400 CW MHz, 250 W CW, 32 V RF POWER LDMOS TRANSISTOR FORCONSUMERAND COMMERCIAL COOKING Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR P in (W) Test Voltage Result 2450 CW > 10:1 at all Phase Angles Features 14 (3 db Overdrive) 32 No Device Degradation OM L PLASTIC Characterized with series equivalent large--signal impedance parameters and common source S--parameters Internally pre--matched for ease of use Qualified for operation at 32 Vdc Integrated ESD protection 150C case operating temperature Gate 2 1 Drain 225C die temperature capability Typical Applications Consumer cooking Commercial cooking (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections, All rights reserved. 1

2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS 0.5, +65 Vdc Gate--Source Voltage V GS 6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg 65 to +150 C Case Operating Temperature Range T C 40 to +150 C Operating Junction Temperature Range (1,2) T J 40 to +225 C Total Device T C =25C Derate above 25C Table 2. Thermal Characteristics P D W W/C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 98C, 250 W CW, 32 Vdc, I DQ = 100 ma, 2450 MHz Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Test Methodology Charge Device Model (per JESD22--C101) Table 4. Moisture Sensitivity Level (MSL) R JC 0.26 C/W Class 2, passes 2500 V B, passes 250 V IV, passes 2000 V Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =32Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 303 Adc) Gate Quiescent Voltage (V DS =30Vdc,I D = 100 madc) Drain--Source On--Voltage (V GS =10Vdc,I D =3.7Adc) I DSS 10 Adc I DSS 1 Adc I GSS 1 Adc V GS(th) Vdc V GS(Q) 1.6 Vdc V DS(on) Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955. (continued) 2

3 Table 6. Typical Performance In Freescale Reference Circuit, 50 ohm system, V DD =32Vdc,I DQ =25mA,P out = 250 W, f = 2450 MHz Characteristic Symbol Min Typ Max Unit Power Gain G ps 15.9 db Power Added Efficiency 59.0 % P 1 db Compression Point P1dB 263 W P 3 db Compression Point P3dB 294 W Gain Variation over Temperature (+25C to +125C) Output Power Variation over Temperature (+25C to +125C) Table 7. Load Mismatch/Ruggedness In Freescale Reference Circuit, 50 ohm system, I DQ = 100 ma Frequency (MHz) Signal Type VSWR 2450 CW > 10:1 at all Phase Angles G db/c P1dB db/c P in (W) Test Voltage, V DD Result No Device Degradation (3 db Overdrive) 3

4 Table 8. Load Pull Performance Maximum Power Tuning V DD =32Vdc,I DQ = 136 ma, Pulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source () Z in () Max Output Power P1dB Z (1) load () Gain (db) (dbm) (W) j j j j j j j j j D f (MHz) Z source () Z in () Max Output Power P3dB Z (2) load () Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. D Table 9. Load Pull Performance Maximum Power Added Efficiency Tuning V DD =32Vdc,I DQ = 136 ma, Pulsed CW, 10 sec(on), 10% Duty Cycle f (MHz) Z source () Z in () Max Power Added Efficiency P1dB Z (1) load () Gain (db) (dbm) (W) j j j j j j j j j D f (MHz) Z source () Z in () Max Power Added Efficiency P3dB Z (2) load () Gain (db) (dbm) (W) j j j j j j j j j (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Z source = Measured impedance presented to the input of the device at the package reference plane. Z in = Impedance as measured from gate contact to ground. Z load = Measured impedance presented to the output of the device at the package reference plane. D Input Load Pull Tuner and Test Circuit Device Under Test Output Load Pull Tuner and Test Circuit Z source Z in Z load 4

5 P3dB - TYPICAL LOAD PULL CONTOURS 2450 MHz IMAGINARY () E P REAL () Figure 2. P3dB Load Pull Output Power Contours (dbm) IMAGINARY () E 5 P REAL () Figure 3. P3dB Load Pull Efficiency Contours IMAGINARY () E P REAL () Figure 4. P3dB Load Pull Gain Contours (db) Gain Power Added Efficiency Output Power NOTE: P E = Maximum Output Power = Maximum Power Added Efficiency 5

6 MHz REFERENCE CIRCUIT 2 3 Table MHz Performance (In Freescale Reference Circuit, 50 ohm system) V DD =32Vdc,I DQ =25mA,T C =25C Frequency (MHz) P in (W) G ps (db) D P out (W) Table 11. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type VSWR P in (W) Test Voltage, V DD Result 2450 CW > 10:1 at all Phase Angles 14 (3 db Overdrive) 32 No Device Degradation 6

7 MHz REFERENCE CIRCUIT 2 3 D63942 C6 C2 C3 R1 C1 Q1 C4* C5* C10 C9 C7 C8 MHT1003 Rev. 3 *C4 and C5 are mounted vertically. Figure 5. Reference Circuit Component Layout MHz Table 12. Reference Circuit Component Designations and Values MHz Part Description Part Number Manufacturer C1, C3, C4, C5, C6, C7, C8 27 pf Chip Capacitors ATC600F270JT250XT ATC C2, C9 10 F Chip Capacitors GRM32ER61H106KA12L Murata C F, 50 V Electrolytic Capacitor 227CKE050M Illinois Capacitor Q1 RF Power LDMOS Transistor Freescale R1 10, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay PCB Rogers RT6035HTC, 0.030, r =3.66 D63942 MTL 7

8 V BIAS Z7 Z6 C2 C3 Z17 Z18 RF INPUT Z1 Z2 Z3 Z4 Z5 R1 Z8 Z9 Z10 Z16 Z11 C6 C4 Z12 Z13 Z14 Z15 RF OUTPUT C1 Z19 C5 + Z20 C8 Z21 C10 V SUPPLY C7 C9 Figure 6. Reference Circuit Schematic MHz Table 13. Reference Circuit Microstrips MHz Microstrip Description Microstrip Description Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip Z Microstrip 8

9 TYPICAL CHARACTERISTICS MHz REFERENCE CIRCUIT G ps, POWER GAIN (db) V DD =32Vdc P in =7.0W I DQ =25mA f, FREQUENCY (MHz) Figure 7. Power Gain, Power Added Efficiency and Output Power versus Frequency at a Constant Input Power G ps P out , POWER ADDED EFFICIENCY P out,output POWER (WATTS) P out, OUTPUT POWER (WATTS) V DD =32Vdc,P in =7.0W V DD =32Vdc,P in =3.5W Detail A V DD =32Vdc P in =3.5W f = 2450 MHz 0 f = 2450 MHz V GS, GATE--SOURCE VOLTAGE (VOLTS) V GS, GATE--SOURCE VOLTAGE (VOLTS) Detail A Figure 8. Output Power versus Gate -Source Voltage P out, OUTPUT POWER (WATTS) V DD =32Vdc P in =7.0W 1.2 G ps, POWER GAIN (db) V DD =32Vdc I DQ =25mA f = 2500 MHz 2450 MHz 2400 MHz MHz MHz 2400 MHz MHz 10 G ps MHz P 5 in 2500 MHz P out, OUTPUT POWER (WATTS) Figure 9. Power Gain, Power Added Efficiency and Input Power versus Output Power and Frequency , POWER ADDED EFFICIENCY P in, INPUT POWER (WATTS) 9

10 TYPICAL CHARACTERISTICS MHz REFERENCE CIRCUIT G ps, POWER GAIN (db) V DD =32Vdc I DQ =25mA f = 2450 MHz T A =25_C 85_C 125_C _C 12 G ps _C _C _C 25_C P 5 in 85_C P out, OUTPUT POWER (WATTS) Figure 10. Power Gain, Power Added Efficiency and Input Power versus Output Power and Temperature , POWER ADDED EFFICIENCY P in, INPUT POWER (WATTS) 10

11 MHz REFERENCE CIRCUIT Z o =10 f = 2500 MHz Z load f = 2400 MHz Z source f = 2500 MHz f = 2400 MHz f MHz Z source Z load j j j j j j1.90 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. 50 Input Matching Network Device Under Test Output Matching Network 50 Z source Z load Figure 11. Series Equivalent Source and Load Impedance MHz 11

12 2X SOLDER PADS (20.32) (1) (10.39) (1) (9.88) (13.72) Inches (mm) (1) (20.70) 1. Slot dimensions are minimum dimensions and exclude milling tolerances Figure 12. PCB Pad Layout for OM L MHT1003N ATWLYYWWB Figure 13. Product Marking Table 14. Ordering Information Device Tape and Reel Information Package R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel OM L 12

13 PACKAGE DIMENSIONS 13

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16 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at and select the Part Number link. Go to Software & Tools on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Dec Initial Release of Data Sheet 16

17 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including typicals, must be validated for each customer application by customer s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. Freescale and the Freescale logo are trademarks of, Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 RF Document Device Number: DataMHT1003N Freescale Rev. 0, 12/2014 Semiconductor, Inc. 17