V GS(th) Vdc. V GS(Q) 2.6 Vdc. V GG(Q) Vdc. V DS(on) Vdc

Transcription

1 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: V DD =30Volts,I DQ = 1600 ma, P out = 74 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = % Probability on CCDF. Frequency G ps (db) η D (%) Output PAR (db) ACPR (dbc) Document Number: MRF8S18260H Rev. 1, 2/2012 MRF8S18260HR6 MRF8S18260HSR MHz, 74 W AVG., 30 V SINGLE W -CDMA LATERAL N -CHANNEL RF POWER MOSFETs 1805 MHz MHz MHz Capable of Handling 10:1 32 Vdc, 1840 MHz, 374 Watts CW Output Power (3 db Input Overdrive from Rated P out ) Typical P 1 db Compression Point 260 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. CASE 375I -04 NI MRF8S18260HR6 CASE 375J -03 NI -1230S -8 MRF8S18260HSR6 Table 1. Maximum Ratings Rating Symbol Value Unit N.C. 1 8 VBW Drain--Source Voltage V DSS --0.5, +65 Vdc RF in /V GS 2 7 RF out /V DS Gate--Source Voltage V GS --6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc RF in /V GS 3 6 RF out /V DS Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C CW T C =25 C Derate above 25 C CW W W/ C N.C. 4 5 VBW (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 81 C, 74 W CW, 30 Vdc, I DQ = 1600 ma, 1805 MHz Case Temperature 88 C, 260 W CW (4),30Vdc,I DQ = 1600 ma, 1805 MHz R θjc C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table., 2010, All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics (1) Gate Threshold Voltage (V DS =10Vdc,I D = 400 μadc) Gate Quiescent Voltage (V DS =30Vdc,I D = 1600 ma) Class I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 2.6 Vdc A IV Fixture Gate Quiescent Voltage (V DD =30Vdc,I D = 1600 ma, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =4Adc) V GG(Q) Vdc V DS(on) Vdc Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) V DD =30Vdc,I DQ = 1600 ma, P out = 74 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = % Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHzOffset. Power Gain G ps db Drain Efficiency η D % Output Peak--to--Average 0.01% Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V DD =30Vdc,I DQ = 1600 ma, P out = 74 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = % Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHzOffset. Frequency G ps (db) η D (%) Output PAR (db) ACPR (dbc) 1805 MHz MHz MHz Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally. 2. Part internally matched both on input and output. IRL (db) (continued) 2

3 Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =30Vdc,I DQ = 1600 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 260 W IMD 100 W PEP, P out where IMD Third Order Intermodulation 30 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 21 MHz VBW res 64 MHz Gain Flatness in 75 MHz P out =74WAvg. G F 0.4 db Gain Variation over Temperature (--30 C to+85 C) G db/ C Output Power Variation over Temperature P1dB 0.01 db/ C (--30 C to+85 C) (1) 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3

4 C11 C9 C7 C24 R6 R7 R4 R5 C1 R2 C3 C2 C4 R3 R1 C5 C6 CUT OUT AREA C26 C27 C20 C18 C16 C17 C19 C21 C22 C15 C14 C23 C13 MRF8S18260H/HS Rev. 2 C12 C10 C8 C25 Figure 2. MRF8S18260HR6(HSR6) Test Circuit Component Layout Table 5. MRF8S18260HR6(HSR6) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 2.2 pf Chip Capacitor ATC600F2R2BT250XT ATC C2, C7, C8, C14, C20, C21 15 pf Chip Capacitors ATC600F150JT250XT ATC C3, C4, C5, C6 C16, C17, 1.0 pf Chip Capacitors ATC600F1R0BT250XT ATC C18, C19 C9, C10, C22, C23 10 μf, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C11, C12 47 μf, 35 V Electrolytic Capacitors 476KXM050M Illinois Capacitor C pf Chip Capacitor ATC600F0R6BT250XT ATC C pf Chip Capacitor ATC600F0R4BT250XT ATC C24, C μf, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C26, C μf Chip Capacitors C4532X7RIH685K TDK R1 2kΩ, 1/4 W Chip Resistor CRCW12062k00FKEA Vishay R2, R Ω, 1/4 W Chip Resistors CRCW12064R75FKEA Vishay R4, R5, R6, R7 1kΩ, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay PCB 0.020, ε r =3.5 RO4350B Rogers 4

5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) V DD =30Vdc,P out =74W(Avg.),I DQ = 1600 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF PARC IRL f, FREQUENCY (MHz) Figure 3. Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 74 Watts Avg. G ps ACPR η D 31 η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) IMD, INTERMODULATION DISTORTION (dbc) V DD =30Vdc,P out = 100 W (PEP), I DQ = 1600 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz IM7--L IM3--U IM3--L IM5--U IM5--L IM7--U TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing G ps, POWER GAIN (db) OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (db) η D PARC G ps --1 db = 60 W --2 db = 85 W ACPR --3dB=115W --4 V DD =30Vdc,I DQ = 1600 ma, f = 1840 MHz 10 Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF η D, DRAIN EFFICIENCY (%) ACPR (dbc) P out, OUTPUT POWER (WATTS) Figure 5. Output Peak -to -Average Ratio Compression (PARC) versus Output Power 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) MHz 1805 MHz 1880 MHz G ps V DD =30Vdc,I DQ = 1600 ma, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF MHz 1840 MHz ACPR MHz 1880 MHz MHz 1805 MHz P out, OUTPUT POWER (WATTS) AVG. Figure 6. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power η D η D, DRAIN EFFICIENCY (%) ACPR (dbc) Gain GAIN (db) 12 8 IRL IRL (db) V DD =30Vdc 4 P in =0dBm --15 I DQ = 1600 ma f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response W -CDMA TEST SIGNAL PROBABILITY (%) Input Signal W--CDMA. ACPR Measured in 3.84 MHz Channel ±5 MHzOffset. Input Signal PAR = % Probability on CCDF PEAK--TO--AVERAGE (db) Figure 8. CCDF W -CDMA IQ Magnitude Clipping, Single -Carrier Test Signal 10 (db) ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW +ACPRin3.84MHz Integrated BW f, FREQUENCY (MHz) Figure 9. Single -Carrier W -CDMA Spectrum 6

7 V DD =30Vdc,I DQ = 1600 ma, P out =74WAvg. f MHz Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j1.18 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance 7

8 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) V DD =30Vdc,I DQ = 1600 ma, Pulsed CW, 10 μsec(on) 10% Duty Cycle Ideal MHz Actual MHz MHz MHz 1845 MHz P in, INPUT POWER (dbm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 30 V f (MHz) P1dB P3dB Watts dbm Watts dbm f (MHz) Test Impedances per Compression Level Z source Ω Z load Ω 1805 P1dB j j P1dB j j P1dB j j1.14 Figure 11. Pulsed CW Output Power versus Input 30 V 8

9 PACKAGE DIMENSIONS 9

10 10

11 11

12 12

13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Sept Initial Release of Data Sheet 1 Feb Table 3, ESD Protection Characteristics, removed the word Minimum after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed dimension F in mm from to , changed dimension U in mm from to , changed dimension W3 in mm from to Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed dimension A in mm from to , changed dimension F in mm from to , changed dimension U in mm from to

14 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed: Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F , Shimo--Meguro, Meguro--ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing China support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of All other product or service names are the property of their respective owners. 2010, All rights reserved. Document Number: MRF8S18260H 14 Rev. 1, 2/2012