RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications. Typical Performance: V DD =50Volts,I DQ = 100 ma Signal Type Pulsed (100 μsec, 20% Duty Cycle) P out (W) f (MHz) G ps (db) η D (%) IRL (db) 300 Peak CW 300 Avg Document Number: MRFE6VP6300H Rev. 0, 10/2010 MRFE6VP6300HR3 MRFE6VP6300HSR MHz, 300 W, 50 V LATERAL N -CHANNEL BROADBAND RF POWER MOSFETs Capable of Handling a Load Mismatch of 65:1 50 Vdc, 230 MHz, at all Phase Angles 300 Watts CW Output Power 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec Capable of 300 Watts CW Operation Features Device can be used Single--Ended or in a Push--Pull Configuration Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 V DD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation RoHS Compliant NI in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. CASE 465M -01, STYLE 1 NI MRFE6VP6300HR3 CASE 465H -02, STYLE 1 NI -780S -4 MRFE6VP6300HSR3 RF in /V GS 3 1 RF out /V DS Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +125 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C RF out /V GS 4 2 RF out /V DS (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 75 C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 50 Vdc, I DQ = 100 ma, 230 MHz Case Temperature 87 C, 300 W CW, 50 Vdc, I DQ = 1100 ma, 230 MHz Z θjc 0.05 R θjc Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955. C/W, Inc., All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) B (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) I GSS 1 μadc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mA) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 100 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (1) (V DS =10Vdc,I D = 480 μadc) Gate Quiescent Voltage (V DD =50Vdc,I D = 100 madc, Measured in Functional Test) Drain--Source On--Voltage (1) (V GS =10Vdc,I D =1Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (V DS =50Vdc± 30 1 MHz, V GS =0Vdc) Output Capacitance (V DS =50Vdc± 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =50Vdc,V GS =0Vdc± 30 1 MHz) V (BR)DSS 125 Vdc I DSS 5 μadc I DSS 10 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) 0.25 Vdc C rss 0.8 pf C oss 76 pf C iss 188 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =50Vdc,I DQ = 100 ma, P out = 300 W Peak (60 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle Power Gain G ps db Drain Efficiency η D % Input Return Loss IRL db 1. Each side of device measured separately. 2

3 V BIAS + C8 L1 C9 + C14 + C15 C10 C11 C12 C13 + C16 V SUPPLY RF INPUT Z1 C1 C4 Z2 C5 C2 Z3 C6 C7 Z4 Z5 C3 R1 Z6 Z7 DUT Z8 Z9 L2 Z10 C17 Z11 C18 C19 Z12 C20 Z13 RF OUTPUT Z x Microstrip Z2* x Microstrip Z3* x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z7, Z x Microstrip Z x Microstrip Z10* x Microstrip Z11* x Microstrip Z12* x Microstrip Z x Microstrip * Line length includes microstrip bends Figure 2. MRFE6VP6300HR3(HSR3) Test Circuit Schematic Table 5. MRFE6VP6300HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C20 15 pf Chip Capacitors ATC100B150JT500XT ATC C2 82 pf Chip Capacitor ATC100B820JT500XT ATC C3, C17 91 pf Chip Capacitors ATC100B910JT500XT ATC C4, C pf Chip Capacitors ATC100B102JT50XT ATC C5, C11 10K pf Chip Capacitors ATC200B103KT50XT ATC C6 0.1 μf, 50 V Chip Capacitor CDR33BX104AKWS AVX C7 2.2 μf, 100 V Chip Capacitor HMK432B7225KM--T Taiyo Yuden C8 10 μf, 35 V Tantalum Capacitor T491D106K035AT Kemet C9 2.2 μf, 100 V Chip Capacitor G2225X7R225KT3AB ATC C μf, 100 V Chip Capacitor C1812F104K1RAC Kemet C μf, 100 V Chip Capacitor C1825C103K1GAC Kemet C14, C15, C μf, 100 V Electolytic Capacitors MCGPR100V227M16X26--RH Multicomp C18, C19 18 pf Chip Capacitors ATC100B180JT500XT ATC L1 120 nh Inductor 1812SMS--R12JLC Coilcraft L nh Inductor GA3095--ALC Coilcraft R Ω, 1/2 W Chip Resistor CRCW20101K00FKEF Vishay PCB 0.030, ε r =2.55 AD255A Arlon 3

4 C8 C14 C15 L1 C13 C16 C6 C5 C7 C9 C10 C12 C11 C1 C4 C3 R1 L2 C17 C18 C20 C2 CUT OUT AREA C19 MRFE6VP6300H/HS Rev. 2 Figure 3. MRFE6VP6300HR3(HSR3) Test Circuit Component Layout 4

5 TYPICAL CHARACTERISTICS PULSED C, CAPACITANCE (pf) Measured with ±30 1 MHz 54 V GS =0Vdc V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 4. Capacitance versus Drain -Source Voltage C iss C oss C rss P out, OUTPUT POWER (dbm) PULSED P1dB = 55.4 dbm (344 W) P3dB = 56.0 dbm (398 W) P2dB = 55.8 dbm (380 W) Ideal Actual V DD =50Vdc,I DQ = 100 ma, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle P in, INPUT POWER (dbm) PULSED Figure 5. Pulsed Output Power versus Input Power 34 G ps, POWER GAIN (db) V DD =50Vdc,I DQ = 100 ma, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle G ps 23 η D P out, OUTPUT POWER (WATTS) PULSED η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD =50Vdc,I DQ = 100 ma, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 50 V DD =30V 35 V 40 V P out, OUTPUT POWER (WATTS) PULSED 45 V 50 V Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Power Gain versus Output Power η D, DRAIN EFFICIENCY (%) V DD =30V 35 V 40 V 45 V V DD =50Vdc,I DQ = 100 ma, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle V 400 G ps, POWER GAIN (db) V DD =50Vdc,I DQ = 100 ma, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle T C =--30_C 85_C η D 25_C G ps 85_C 25_C --30_C η D, DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) PULSED P out, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Drain Efficiency versus Output Power Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power 5

6 TYPICAL CHARACTERISTICS TWO -TONE IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,I DQ = 1600 ma, f1 = 230 MHz f2 = MHz, Two--Tone Measurements 3rd Order 5th Order 7th Order IMD, INTERMODULATION DISTORTION (dbc) V DD =50Vdc,P out = 250 W (PEP), I DQ = 1600 ma Two--Tone Measurements 3rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz) Figure 10. Intermodulation Distortion Products versus Output Power Figure 11. Intermodulation Distortion Products versus Two -Tone Spacing G ps, POWER GAIN (db) I DQ = 1600 ma 1400 ma 1100 ma 900 ma 650 ma V DD = 50 Vdc, f1 = 230 MHz, f2 = MHz Two--Tone Measurements IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 50 Vdc, f1 = 230 MHz, f2 = MHz Two--Tone Measurements I DQ = 650 ma 900 ma 1400 ma 1100 ma 1600 ma P out, OUTPUT POWER (WATTS) PEP Figure 12. Two -Tone Power Gain versus Output Power P out, OUTPUT POWER (WATTS) PEP Figure 13. Third Order Intermodulation Distortion versus Output Power 6

7 TYPICAL CHARACTERISTICS MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD =50Vdc,P out = 300 W Avg., and η D = 80%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 14. MTTF versus Junction Temperature CW 250 7

8 Z source f = 230 MHz Z load f = 230 MHz Z o =5Ω f MHz V DD =50Vdc,I DQ = 100 ma, P out = 300 W Peak Z source Ω Z load Ω j j2.85 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance 8

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13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Oct Initial Release of Data Sheet 13

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