RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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1 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 211 to 217 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single-Carrier W-CDMA Performance: V DD = 28 Volts, I DQ = 97 ma, P out = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 Probability on CCDF. Frequency G ps (db) D (%) Output PAR (db) ACPR (dbc) 211 MHz MHz MHz Capable of Handling 1:1 32 Vdc, 214 MHz, 188 Watts CW (1) Output Power (3 db Input Overdrive from Rated P out ) Typical P 1 db Compression Point 126 Watts CW Features 1% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate-Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 25 Units per 56 mm, 13 inch Reel. Document Number: MRF8S2114H Rev., 5/21 MRF8S2114HR3 MRF8S2114HSR MHz, 34 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs CASE 465-6, STYLE 1 NI-78 MRF8S2114HR3 CASE 465A-6, STYLE 1 NI-78S MRF8S2114HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -.5, +65 Vdc Gate-Source Voltage V GS -6., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg -65 to +15 C Case Operating Temperature T C 15 C Operating Junction Temperature (2,3) T J 225 C CW T C = 25 C Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (3,4) Unit Thermal Resistance, Junction to Case Case Temperature 75 C, 34 W CW, 28 Vdc, I DQ = 97 ma, 214 MHz Case Temperature 8 C, 15 W CW (1), 28 Vdc, I DQ = 97 ma, 214 MHz R θjc Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955. C/W, Inc., 21. All rights reserved. 1
2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C11) Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = Vdc) On Characteristics Gate Threshold Voltage (V DS = 1 Vdc, I D = 2 μadc) Gate Quiescent Voltage (V DS = 28 Vdc, I D = 97 madc) Fixture Gate Quiescent Voltage (1) (V DD = 28 Vdc, I D = 97 madc, Measured in Functional Test) Drain-Source On-Voltage (V GS = 1 Vdc, I D = 3 Adc) I DSS 1 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 2.6 Vdc V GG(Q) Vdc V DS(on) Vdc Functional Tests (2) (In Freescale Test Fixture, 5 ohm system) V DD = 28 Vdc, I DQ = 97 ma, P out = 34 W Avg., f = 214 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHz Offset. Power Gain G ps db Drain Efficiency η D % Output Peak-to-Average Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Broadband Performance (In Freescale Test Fixture, 5 ohm system) V DD = 28 Vdc, I DQ = 97 ma, P out = 34 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHz Offset. Frequency G ps (db) D (%) Output PAR (db) ACPR (dbc) 211 MHz MHz MHz V GG = 2 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) IRL (db) 2
3 Table 4. Electrical Characteristics (T A = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 5 ohm system) V DD = 28 Vdc, I DQ = 97 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 126 W IMD 55 W PEP, P out where IMD Third Order Intermodulation 3 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 1 MHz VBW res 53 MHz Gain Flatness in 6 MHz P out = 34 W Avg. G F.5 db Gain Variation over Temperature (-3 C to +85 C) Output Power Variation over Temperature (-3 C to +85 C) ΔG.16 db/ C ΔP1dB.18 (1) dbm/ C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 3
4 R3 C3 C4 C17 C18 C19 R1 C2 C1 R2 C2 C11* C6 C7* C8* R4 C1* C14* C15* C5 C9* CUT OUT AREA C12* C13* C16 MRF8S2114 Rev. C21 C22 C23 C24 *C7, C8, C9, C1, C11, C12, C13, C14, and C15 are mounted vertically. Figure 1. MRF8S2114HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S2114HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1 μf Chip Capacitor T491D16K55AT Kemet C2.1 μf Chip Capacitor C1825C13K1GAC Kemet C3 4.7 μf Chip Capacitor GRM43ER61H475MA88L Murata C4, C17, C pf Chip Capacitors ATC1B6R8CT5XT ATC C5, C16 11 pf Chip Capacitors ATC1B11JT5XT ATC C6.5 pf Chip Capacitor ATC1BR5BT5XT ATC C7 1.2 pf Chip Capacitor ATC1B1R2BT5XT ATC C8, C9, C11, C13, C14.3 pf Chip Capacitors ATC1BR3BT5XT ATC C1, C12.1 pf Chip Capacitors ATC1BR1BT5XT ATC C15.2 pf Chip Capacitor ATC1BR2BT5XT ATC C18, C19, C22, C23 1 μf Chip Capacitors GRM55DR61H16KA88L Murata C2, C24 47 μf, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp R1, R2 2 kω, 1/4 W Chip Resistors CRCW1262KFKEA Vishay R3 Ω, 3.5 A Chip Resistor CRCW126ZEA Vishay R Ω, 1/4 W Chip Resistor CRCW1262R37FNEA Vishay PCB.3, ε r = 2.55 AD255A Arlon 4
5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) V DD = 28 Vdc, P out = 34 W (Avg.), I DQ = 97 ma Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 Probability on CCDF G ps -28 IRL -32 ACPR f, FREQUENCY (MHz) Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband P out = 34 Watts Avg. η D PARC η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) PARC (db) IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, P out = 55 W (PEP), I DQ = 97 ma Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 214 MHz IM3-U IM3-L IM5-U IM5-L IM7-L IM7-U TWO-T ONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two-T one Spacing G ps, POWER GAIN (db) OUTPUT COMPRESSION AT.1% PROBABILITY ON CCDF (db) V DD = 28 Vdc, I DQ = 97 ma, f = 214 MHz Single-Carrier W-CDMA -1 db = 32 W 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 Probability on CCDF -2 db = 44 W -3 db = 6 W ACPR P out, OUTPUT POWER (WATTS) Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power η D G ps PARC η D, DRAIN EFFICIENCY (%) ACPR (dbc) 5
6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) 2 6 V DD = 28 Vdc, I DQ = 97 ma, Single-Carrier W-CDMA η D 3.84 MHz Channel Bandwidth MHz 211 MHz 217 MHz 211 MHz 217 MHz 214 MHz P out, OUTPUT POWER (WATTS) AVG. ACPR Input Signal PAR = 7.5 Probability on CCDF Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power G ps η D, DRAIN EFFICIENCY (%) ACPR (dbc) Gain GAIN (db) IRL V DD = 28 Vdc P in = dbm I DQ = 97 ma f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response IRL (db) W-CDMA TEST SIGNAL 1 1 PROBABILITY (%) Input Signal W-CDMA. ACPR Measured in 3.84 MHz Channel ±5 MHz Offset. Input Signal PAR = 7.5 Probability on CCDF PEAK-T O-AVERAGE (db) Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal 1 (db) ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW +ACPR in 3.84 MHz Integrated BW f, FREQUENCY (MHz) Figure 8. Single-Carrier W-CDMA Spectrum 6
7 f MHz V DD = 28 Vdc, I DQ = 97 ma, P out = 34 W Avg. Z source Z load j j j j j j j j j j j j j j j j j j3.43 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance 7
8 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) V DD = 28 Vdc, I DQ = 97 ma, Pulsed CW, 1 μsec(on), 1% Duty Cycle 217 MHz 214 MHz 211 MHz 214 MHz P in, INPUT POWER (dbm) Ideal Actual 217 MHz 211 MHz NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V f (MHz) P1dB P3dB Watts dbm Watts dbm f (MHz) Test Impedances per Compression Level Z source Ω Z load Ω 211 P1dB j j P1dB j j P1dB j j2.82 Figure 1. Pulsed CW Output Power versus Input 28 V 8
9 PACKAGE DIMENSIONS 9
10 1
11 11
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13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description May 21 Initial Release of Data Sheet 13
14 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 122 China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer's technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 21. All rights reserved. Document Number: MRF8S2114H 14 Rev., 5/21
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