921 MHz-960 MHz SiFET RF Integrated Power Amplifier

Transcription

1 Technical Data 9 MHz-96 MHz SiFET RF Integrated Power Amplifier The MHVIC9HNR integrated circuit is designed for GSM base stations, uses Freescale s newest High Voltage (6 Volts) LDMOS IC technology, and contains a three- stage amplifier. Target applications include macrocell (driver function) and microcell base stations (final stage). The device is in a PFP- 6 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. Typical GSM Performance: V DD = 6 Volts, I DQ = ma, P out = Watts, Full Frequency Band (9-96 MHz) Power Gain 9 db (Typ) Power Added Efficiency % (Typ) Capable of Handling : 6 Vdc, 9 MHz, Watts CW Output Power Stable into a : VSWR. All Spurs Below -6 to dbm CW P out. Features On-Chip Matching ( Ohm Input, DC Blocked, > Ohm Output) Integrated ESD Protection Usable Frequency Range 9 to 96 MHz RoHS Compliant In Tape and Reel. R Suffix =, Units per 6 mm, inch Reel. Document Number: MHVIC9HNR Rev. 9, /6 MHVIC9HNR 96 MHz, W, 6 V GSM CELLULAR RF LDMOS INTEGRATED CIRCUIT 6 CASE 97- PFP- 6 Table. Maximum Ratings Rating Symbol Value Unit Drain Supply Voltage V DD Vdc Gate Supply Voltage V GS 6 Vdc RF Input Power P in dbm Case Operating Temperature T C - to + C Storage Temperature Range T stg - 6 to + C Operating Channel Temperature T ch C Table. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc.9 C/W RF in V D V D V D RF out N.C. V D V D GND RF in V GATE V GATE V GATE N.C. V D /RF out V D /RF out V D /RF out V D /RF out V D /RF out N.C. N.C. (Top View) V GATE V GATE V GATE Note: Exposed backside flag is source terminal for transistors. Figure. Functional Block Diagram Figure. Pin Connections, Inc., 6. All rights reserved. MHVIC9HNR

2 Table. ESD Protection Characteristics Human Body Model Machine Model Table. Moisture Sensitivity Level Test Conditions Class (Minimum) M (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD - A, IPC/JEDEC J- STD- 6 C Table. Recommended Operating Ranges Parameter Symbol Value Unit Drain Supply Voltage V DD 6 Vdc rd Stage Quiescent Current I DQ ma nd Stage Quiescent Current I DQ ma st Stage Quiescent Current I DQ ma Table 6. Electrical Characteristics (T A = C matched to a Ω system, unless otherwise noted) V DD = 6 V, V GS set for I DQ = ma, frequency range 9-96 MHz Characteristic Symbol Min Typ Max Unit Frequency Range f RF 9 96 MHz Output db Compression Point db 9 dbm Power PdB db 9 db Power Added db Compression Point db % Input Return PdB db - - db Gain dbm Variation (T C = - to + dbm) G F G V. db db MHVIC9HNR

3 6 V D V D C V D C C7 C RF INPUT RF OUTPUT C6 C9 V GS R R C C 6 7 R C 9 C, C, C, C, C, C μf Surface Mount Chip Capacitors C6.7 pf AVX Chip Capacitor, ACCU P (JR7BBT) C7 7 pf AVX Chip Capacitor, ACCU P (K7JBTTR) C9 pf AVX Chip Capacitor, ACCU P (JJBT) J, J Header (Break away), HDRXSTIMCSAFU J, J SMA Connector 6 (Threaded) R, R, R Ω Chip Resistors () PCB Rogers, mils Figure MHz Demo Board Schematic MHVIC9HNR

4 C V D V D V D C C C7 RF Input C6 C9 RF Output C C C R R R V G V G V G MHVIC9HR 9 MHz Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure MHz Demo Board Component Layout MHVIC9HNR

5 TYPICAL CHARACTERISTICS Gps, POWER GAIN (db) T C = C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma 6 PAE, POWER ADDED EFFICIENCY (%) 6 T C = C + C I DQ = ma f = 96 MHz + C P out, OUTPUT POWER (WATTS) P out, OUTPUT POWER (WATTS) Figure. Power Gain versus Output Power Figure 6. Power Added Efficiency versus Output Power T C = C, I DQ = ma Pout, OUTPUT POWER (WATTS) T C = C + C + C I DQ = ma f = 96 MHz T C = + C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma P in, INPUT POWER (dbm) f, FREQUENCY (MHz) Figure 7. Output Power versus Input Power Figure. Power Gain versus Frequency P out = W T C = C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma T C = + C, I DQ = ma PAE, POWER ADDED EFFICIENCY (%) T C = + C, I DQ = ma T C = + C, I DQ = ma f = 96 MHz f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 9. Power Gain versus Frequency P out = PdB Figure. Power Added Efficiency versus Frequency P out = W MHVIC9HNR

6 TYPICAL CHARACTERISTICS IRL, INPUT RETURN LOSS (db) 6 9 T C = + C C C IRL, INPUT RETURN LOSS (db) 6 9 T C = + C C C f, FREQUENCY(MHz) f, FREQUENCY(MHz) Figure. Input Return Loss versus Frequency P out = W Figure. Input Return Loss versus Frequency P out = PdB EVM, ERROR VECTOR MAGNITUDE (%)..... P out =. W (RMS). W (RMS). W (RMS) 6 7 f = MHz 9 ACPR, ADJACENT CHANNEL POWER RATIO (dbc) W (RMS). W (RMS). W (RMS) = khz = 6 khz 6 7 P out =. W (RMS). W (RMS). W (RMS) f = MHz 9 I DQ, DRAIN QUIESCENT CURRENT (ma) I DQ, DRAIN QUIESCENT CURRENT (ma) Figure. Error Vector Magnitude versus I DQ Total Figure. Adjacent Channel Power Ratio versus I DQ Total Pout, OUTPUT POWER (WATTS) P in =. mw. mw.6 mw. mw Pout, OUTPUT POWER (WATTS) P in =. mw I DQ total = ma I DQ total = 7 ma f = MHz f = MHz mw.6 mw. mw V DD, SUPPLY VOLTAGE (VOLTS) Figure. Output Power versus Supply Voltage V DD, SUPPLY VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage MHVIC9HNR 6

7 TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps η IRL P out = W (PEP) IMD I DQ total = ma Two Tone Measurement, khz Tone Spacing f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (db) IMD, INTERMODULATION DISTORTION (dbc) η, DRAIN EFFICIENCY (%), G ps η IRL IMD P out = W (PEP) I DQ total = ma Two Tone Measurement, khz Tone Spacing f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (db) IMD, INTERMODULATION DISTORTION (dbc) Figure 7. Two- Tone Broadband Performance Figure. Two- Tone Broadband Performance η, DRAIN EFFICIENCY (%), G ps P out = W (PEP), I DQ total = ma η Two Tone Measurement khz Tone Spacing IRL IMD 6 9 f, FREQUENCY (MHz) IRL, INPUT RETURN LOSS (db) IMD, INTERMODULATION DISTORTION (dbc) Pout, OUTPUT POWER (WATTS) G ps η P out 9 6 I DQ total = ma f = MHz.... P in, INPUT POWER (mw) η, DRAIN EFFICIENCY (%), Figure 9. Two- Tone Broadband Performance Figure. CW MHz Pout, OUTPUT POWER (WATTS) G ps η P out 9 6 I DQ total = 7 ma f = MHz.... η, DRAIN EFFICIENCY (%), Pout, OUTPUT POWER (WATTS) G ps η P out 9 6 I DQ total = 6 ma f = MHz.... η, DRAIN EFFICIENCY (%), P in, INPUT POWER (mw) Figure. CW MHz P in, INPUT POWER (mw) Figure. CW MHz MHVIC9HNR 7

8 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) 6. f =. MHz, f =. MHz Two Tone Measurement khz Tone Spacing. I DQ total = ma 6 ma 7 ma ma P out, OUTPUT POWER (WATTS) PEP Figure. Intermodulation Distortion versus Output Power MHVIC9HNR

9 V DD = 6 V, I DQ = ma, P out = dbm f MHz Z load Ω j j j j j.96 Z o = Ω f = MHz. + j6.6 Z load Z load = Test circuit impedance as measured from drain to ground. f = 9 MHz Device Under Test Output Matching Network Z load Figure. Series Equivalent Load Impedance MHVIC9HNR 9

10 NOTES MHVIC9HNR

11 PACKAGE DIMENSIONS h X A E x e e/ A A Y E X E bbb M C ccc C B 6 9 S L B C D DATUM H PLANE SEATING PLANE L..9 W W BOTTOM VIEW c b ÇÇÇ ÉÉ c b aaa M C A S SECT W-W GAUGE PLANE A D NOTES:. CONTROLLING DIMENSION: MILLIMETER.. DIMENSIONS AND TOLERANCES PER ASME Y.M, 99.. DATUM PLANE H IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS. PER SIDE. DIMENSIONS D AND E DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE H.. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS.7 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS A AND B TO BE DETERMINED AT DATUM PLANE H. MILLIMETERS DIM MIN MAX A.. A.. A.9. D D.7. E. 9. E E.7. L.66.7 L. BSC b.. b..7 c..79 c.. e. BSC h.6 7 aaa. bbb. ccc. DETAIL Y CASE 97- ISSUE C PFP-6 MHVIC9HNR

12 How to Reach Us: Home Page: E- mail: USA/Europe or Locations Not Listed: Technical Information Center, CH7 N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 9 Muenchen, Germany (English) +6 (English) (German) + 69 (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower F --, Shimo-Meguro, Meguro-ku, Tokyo - 6 Japan 9 or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box Denver, Colorado or -67- Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc. 6. All rights reserved. MHVIC9HNR Document Number: MHVIC9HNR Rev. 9, /6 RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. For further information, see or contact your Freescale sales representative. For information on Freescale s Environmental Products program, go to