ARCHIVE INFORMATION. RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF372R3 MRF372R5. Freescale Semiconductor

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1 Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field -Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large--signal, common source amplifier applications in 32 volt transmitter equipment. Typical Narrowband Two--Tone f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power 180 Watts PEP Power Gain 17 db Efficiency 36% IMD --35 dbc Typical Broadband Two--Tone f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power 180 Watts PEP Power Gain 14.5 db Efficiency 37% IMD --31 dbc Capable of Handling 3:1 32 Vdc, 857 MHz, 90 Watts CW Output Power Features Internally Matched for Ease of Use Integrated ESD Protection Excellent Thermal Stability Characterized with Series Equivalent Large--Signal Impedance Parameters RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +68 Vdc Gate--Source Voltage V GS --0.5, +15 Vdc Drain Current -- Continuous I D 17 Adc Total Device T C =25 C Derate above 25 C P D MRF372R3 MRF372R MHz, 180 W, 32 V LATERAL N -CHANNEL RF POWER MOSFET CASE 375G -04, STYLE 1 NI -860C3 Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature T J 200 C W W/ C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 0.5 C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model Machine Model 1 (Minimum) M3 (Minimum), Inc., 2006, All rights reserved. 1

2 Table 4. Electrical Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics (1) Drain--Source Breakdown Voltage (V GS =0Vdc,I D =10 μa) Zero Gate Voltage Drain Current (V DS =32Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (1) (V DS =10V,I D = 200 μa) V (BR)DSS 68 Vdc I DSS 10 μadc I GSS 1 μadc V GS(th) Vdc Gate Quiescent Voltage (2) (V DS =32V,I D = 100 ma) Drain--Source On--Voltage (1) (V GS =10V,I D =3A) Forward Transconductance (V DS =10V,I D =3A) Dynamic Characteristics (1) Input Capacitance (Includes Input Matching Capacitance) (V DS =32V,V GS =0V,f=1MHz) Output Capacitance (V DS =32V,V GS =0V,f=1MHz) Reverse Transfer Capacitance (V DS =32V,V GS =0V,f=1MHz) V GS(Q) Vdc V DS(on) Vdc g fs 2.6 S C iss 260 pf C oss 69 pf C rss 2.5 pf Functional Characteristics, Narrowband Operation (2) (In Freescale MRF372 Narrowband Circuit, 50 ohm system) Common Source Power Gain (V DD =32V,P out = 180 W PEP, I DQ = 800 ma, f1 = 857 MHz, f2 = 863 MHz) G ps db Drain Efficiency (V DD =32V,P out = 180 W PEP, I DQ = 800 ma, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (V DD =32Vdc,P out = 180 W PEP, I DQ = 800 ma, f1 = 857 MHz, f2 = 863 MHz) η % IMD dbc Typical Characteristics, Broadband Operation (2) (In Freescale MRF372 Broadband Circuit, 50 ohm system) Common Source Power Gain (V DD =32Vdc,P out = 180 W PEP, I DQ = 1000 ma, f1 = 857 MHz, f2 = 863 MHz) G ps 14.5 db Drain Efficiency (V DD =32Vdc,P out = 180 W PEP, I DQ = 1000 ma, f1 = 857 MHz, f2 = 863 MHz) η 37 % Intermodulation Distortion (V DD =32Vdc,P out = 180 W PEP, I DQ = 1000 ma, f1 = 857 MHz, f2 = 863 MHz) 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. IMD dbc 2

3 TYPICAL CHARACTERISTICS , Ciss, Capacitance (pf) Coss C iss C oss C rss , Capacitance (pf) Crss V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: C iss does not include input matching capacitance. Figure 1. Capacitance versus Voltage 3

4 GATE DRAIN V GG R1 L1 L2 L3 R3 L4 R4 R5 VDD + C3 R2 C5 C8 C7 C12 C10 Figure MHz Narrowband DC Bias Networks Table MHz Narrowband DC Bias Networks Component Designations and Values C1 C2 C3A, B C4A, B, C14A, B C5A, B C6 C7A, B C8A, B C9 C10A, B C11 C12A, B C13 C15 L1A, B Designation 2.2 pf Chip Capacitor, ATC Description pf Variable Capacitor, Johansen Gigatrim 22 mf, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS 47.0 pf Chip Capacitors, ATC 100 pf Chip Capacitors, ATC 10.0 pf Chip Capacitor, ATC 2.7 pf Chip Capacitors, ATC 1.0 mf, 100 V Chip Capacitors, Vitramon #VJ3640Y105KXBAT 10.0 pf Chip Capacitor, ATC 2.2 mf, 100 V Chip Capacitors, Vitramon #VJ3640Y225KXBAT 5.1 pf Chip Capacitor, ATC 0.01 mf, 100 V Chip Capacitors, Kemet #VJ1210Y103KXBAT 3.9 pf Chip Capacitor, ATC 1.2 pf Chip Capacitor, ATC 130 nh, Coilcraft # SM L2A, B #24 AWG, 3 Turns Loose, Fair Rite # L3A, B 3.85 nh, Coilcraft # L4A, B R1A, B, R2A, B R4A, B, R5A, B 5.0 nh, Coilcraft #A02T 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B 12 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) PCB Balun A, B MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, ε r =3.48 Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, ε r =

5 C1 C3A C3B Output 1 (12.5 ohm microstrip) R1A R1B Note: TrimBalunPCBsothata35mil tab fits into the main PCB slot resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. R2A L1A C2 L1B R2B C4A C4B L2B Output 2 (12.5 ohm microstrip) C5A L2A C5B Vertical Balun Mounting Detail Ground L3A C8A R3A C6 R3B L3B C7B C8B C7A MRF372 Rev 1a C10A R4A R5A L4A C9 C11 C13 L4B R4B R5B C12B C10B C12A C14A C14B C15 Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) 55 mil slot cut out to accept Balun Input (50 ohm microstrip) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure MHz Narrowband Component Layout 5

6 TYPICAL TWO -TONE NARROWBAND CHARACTERISTICS η, DRAIN EFFICIENCY (%) Gps, POWER GAIN (db) V DD =32Vdc I DQ = 1600 ma 2 K Mode 64 QAM 10 db Peak/Avg. Ratio G ps IMR η IMR, INTERMODULATION RATIO (db) η, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) IMD, INTERMODULATION DISTORTION (dbc) V DD =32Vdc I DQ = 1600 ma 6 db Peak/Avg. Ratio Note: P out, OUTPUT POWER (WATTS) AVG. 0 Figure VSB Performance (860 MHz) V DD =32Vdc f1 = 857 MHz f2 = 863 MHz I DQ = 400 ma 800 ma G ps A 1.6 A IMR P out, OUTPUT POWER (WATTS) AVG. Figure 4. COFDM Performance (860 MHz) η Note: IMR measured using Delta Marker Method. IMR measured using Delta Marker Method IMR, INTERMODULATION RATIO (db) Gps, POWER GAIN (db) η D, DRAIN EFFICIENCY (%) I DQ = 1600 ma 1.2 A 800 ma 400 ma P out, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain versus Output Power V DD =32Vdc I DQ = 800 ma f1 = 857 MHz f2 = 863 MHz V DD =32Vdc f1 = 857 MHz f2 = 863 MHz 6 P out, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power P out, OUTPUT POWER (WATTS) PEP Figure 8. Drain Efficiency versus Output Power

7 Z o =10Ω f = 875 MHz Z load f = 845 MHz f = 875 MHz Z source f MHz V DD =32V,I DQ = 800 ma, P out = 180 W PEP Harmonics f GHz Z source Ω j j j1.46 Z source Ω f = 845 MHz Z load Ω j j j0.56 Z load Ω j j j j j j9.62 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- Output Matching Network -- + Z source Z load Figure 9. Narrowband Series Equivalent Source and Load Impedance 7

8 GATE DRAIN V GG R6 L2 R5 L3 R9A R9B VDD + C9 C8 R7 R2 C7 C18 C17 C16 + R3 R4T Figure MHz Broadband DC Bias Networks Table MHz Broadband DC Bias Networks Component Designations and Values C1 Designation 0.7 pf Chip Capacitor, ATC Description C2, C pf Variable Capacitors, Johansen Gigatrim C3A, B, C14A, B, C, D C4 C5 C6 C7A, B C8A, B C9A, B C10 C11 C12 C15A, B C16A, B C17A, B C18A, B 100 pf Chip Capacitors, ATC 4.7 pf,chip Capacitor, ATC 7.5 pf Chip Capacitor, ATC 10.0 pf Chip Capacitor, ATC 6.2 pf Chip Capacitors, ATC 22 mf, 22 V Tantalum Chip Capacitors, Kemet #T491D226K22AS 0.1 mf, 100 V Chip Capacitors, Vitramon #VJ3640Y104KXBAT 13 pf Chip Capacitor, ATC 6.8 pf Chip Capacitor, ATC 3.9 pf Chip Capacitor, ATC 3.3 pf Chip Capacitors, ATC 10 mf, 35 V Tantalum Chip Capacitors, Kemet #T491D106K35AS 3.3 mf, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT 0.01 mf Chip Capacitors, ATC L1A, B nh, Coilcraft # L2A, B 5.45 nh, Coilcraft # L3A, B, C 12.5 nh, Coilcraft #A04T R1A, B 10 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R2A, B 2.2 kω, 1/4 W Chip Resistors, Vishay Dale (1210) R3A, B, R10A, B 390 Ω, 1/8 W Chip Resistors, Vishay Dale (1206) R4TA, B 520 Ω, Thermistor, Vishay #NTHS 1206J14520R5% R5A, B 6.2 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) R6A, B 6.8 kω, 1/4 W Chip Resistors, Vishay Dale (1210) R7 100 kω Potentiometer, Bourns R kω, 1/8 W Chip Resistor, Vishay Dale (1206) R9A, B, C, D 180 Ω, 1/4 W Chip Resistors, Vishay Dale (1210) PCB Balun A, B MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, ε r =3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, ε r =

9 C8A C1 Output 1 (12.5 ohm microstrip) R6A R8 R6B Note: TrimBalunPCBsothata35mil tab fits into the main PCB slot resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. R1A C2 R1B C9A L1A L1B C9B C3A C4 C3B C8B Output 2 (12.5 ohm microstrip) R4TA R2A L2A L2B R3A R9A R9B L3A C5 C6 C10 C11 C12 R2B R7 R5A R5B R4TB C7A C7B R3B C18A C18B C17A L3B L3C R9C R9D C17B MRF372 Rev. 1a C14A C13 Vertical Balun Mounting Detail Ground C14D C16A C16B C15A R10A C14B C14C R10B C15B Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) PCB Substrate (30 mil thick) 55 mil slot cut out to accept Balun Input (50 ohm microstrip) Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure MHz Broadband Component Layout 9

10 TYPICAL TWO -TONE BROADBAND CHARACTERISTICS Gps, POWER GAIN (db) V DD =32Vdc I DQ = 1000 ma f1 -- f2 = 6 MHz G ps = 660 MHz 860 MHz 470 MHz IMD, INTERMODULATION DISTORTION (dbc) V DD =32Vdc I DQ = 1000 ma f1 -- f2 = 6 MHz IMD = 470 MHz 660 MHz 860 MHz P out, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain versus Output Power, DRAIN EFFICIENCY (%) D η V DD =32Vdc I DQ = 1000 ma f1 -- f2 = 6 MHz η D = 860 MHz P out, OUTPUT POWER (WATTS) PEP Figure 14. Drain Efficiency versus Output Power P out, OUTPUT POWER (WATTS) PEP Figure 13. Intermodulation Distortion versus Output Power 470 MHz 660 MHz 10

11 Z o =10Ω Z o =10Ω f = 860 MHz f = 860 MHz Z source Z load f = 470 MHz f MHz V DD =32V,I DQ = 1000 ma, P out = 180 W PEP Z source Ω j j j j0.31 Z load Ω j j j j j j0.02 Z source = Test circuit impedance as measured from gate to gate, balanced configuration. Z load = Test circuit impedance as measured from drain to drain, balanced configuration. f = 470 MHz Input Matching Network + Device Under Test -- Output Matching Network -- + Z source Z load Figure 15. Broadband Series Equivalent Source and Load Impedance 11

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15 PACKAGE DIMENSIONS ccc M R (LID) T A M B M 4X K J G 4 L X Q bbb M B (FLANGE) T A M B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M DIMENSION H TO BE MEASURED (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF (28.96) BASED ON 3M SCREW. S (INSULATOR) bbb M T A M E B M H A 4X D bbb M T A A M ccc M T A M N (LID) M (INSULATOR) bbb M T A M B M B M B M B F C CASE 375G -04 ISSUE G NI -860C3 T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G BSC BSC H J BSC BSC K L BSC 10.8 BSC M N Q R S bbb REF 0.25 REF ccc REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE 15

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