RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical WiMAX Performance: V DD =28Volts,I DQ = 1500 ma, P out = 23 Watts Avg., f = 2700 MHz, d, 64 QAM 3 / 4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF. Power Gain 16.5 db Drain Efficiency 20% Device Output Signal PAR % Probability on CCDF 5.25 MHz Offset --49 dbc in 0.5 MHz Channel Bandwidth Capable of Handling :1 32 Vdc, 2600 MHz, 5 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14. Document Number: MRF7S27130H Rev. 2, 3/2011 MRF7S27130HR3 MRF7S27130HSR MHz, 23 W AVG., 28 V WiMAX LATERAL N -CHANNEL RF POWER MOSFETs CASE , STYLE 1 NI -780 MRF7S27130HR3 CASE 465A -06, STYLE 1 NI -780S MRF7S27130HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DS --0.5, +65 Vdc Gate--Source Voltage V GS --6.0, + Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C CW T C =25 C Derate above 25 C Table 2. Thermal Characteristics CW W W/ C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80 C, 4 W CW Case Temperature 69 C, 23 W CW R θjc C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955., Inc., , All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C1) Class 1B (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D = 348 μadc) Gate Quiescent Voltage (V DS =28Vdc,I D = 1500 madc) Fixture Gate Quiescent Voltage (1) (V DD =28Vdc,I D = 1500 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =3.4Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) Output Capacitance (V DS =28Vdc± 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =28Vdc,V GS =0Vdc± 30 1 MHz) I DSS μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) 2.7 Vdc V GG(Q) Vdc V DS(on) Vdc C rss.4 pf C oss 711 pf C iss 326 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1500 ma, P out = 23 W Avg., f = 2700 MHz, WiMAX Signal, d, 7 MHz Channel Bandwidth, 64 QAM 3 / 4, 4 Bursts, PAR = % Probability on CCDF. ACPR measured in 0.5 MHz Channel ±5.25 MHz Offset. Power Gain G ps db Drain Efficiency η D % Output Peak--to--Average 0.01% Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db 1. V GG =2xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) 2

3 Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1500 ma, P out =23WAvg., f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single--Carrier, 7 MHz Channel Bandwidth, 64 QAM 3 / 4,4Bursts,PAR=9.5dB@ 0.01% Probability on CCDF. Mask System Type P out =23WAvg. Mask dbc Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset Relative Constellation P out =23WAvg. (1) RCE db Error Vector Magnitude (1) (Typical EVM P out = 23 W Avg. with OFDM d Signal Call) EVM 2.2 %rms Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 1500 ma, MHz Bandwidth Video 5 W PEP P out whereim3=--30dbc VBW (Tone Spacing from 0 khz to VBW) IMD3 = VBW frequency -- 0 khz <1 dbc (both sidebands) 40 Gain Flatness in 200 MHz P out =23WAvg. G F 1.2 db Average Deviation from Linear Phase in 200 MHz out = 5 W CW MHz Φ 135 Average Group P out = 5 W CW, f = 2600 MHz Delay 1.5 ns Part--to--Part Insertion Phase P out = 5 W CW, f = 2600 MHz, Six Sigma Window Gain Variation over Temperature (--30 C to+85 C) Output Power Variation over Temperature (--30 C to+85 C) Φ 81.3 G db/ C P1dB 0.01 db/ C 1. RCE = 20Log(EVM/0) 3

4 V BIAS R1 R2 C2 R3 C3 Z17 Z18 V SUPPLY + C4 C6 C7 C8 C12 Z9 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z Z11 Z12 Z13 Z14 Z15 Z16 RF OUTPUT C1 DUT C13 Z19 C5 C C11 C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip 0.6 x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z17* x 0.0 Microstrip Z18, Z19* x 0.0 Microstrip PCB Taconic TLX , 0.030, ε r =2.55 * Variable for tuning Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 2 pf Chip Capacitor ATC0B2R0BT500XT ATC C2, C6, C7, C8, C9, C, C11 μf, 50 V Chip Capacitors C5750X5R1H6M TDK C3 3 pf Chip Capacitor ATC0B3R0BT500XT ATC C4, C5 3.6 pf Chip Capacitors ATC0B3R6BT500XT ATC C μf, 63 V Electrolytic Capacitor, Radial EKME630ELL471MK255 Multicomp C pf Chip Capacitor ATC0B5R6BT500XT ATC R1, R2 2KΩ, 1/4 W Chip Resistors CRCW FKEA Vishay R3 Ω, 1/4 W Chip Resistor CRCW1206R1FKEA Vishay 4

5 C6 C7 C8 V GS R1 R2 C2 R3 C3 C4 C12 V DD C1 CUT OUT AREA C13 C11 C9 C5 C MRF7S27130H/HS Rev. 0 Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout 5

6 TYPICAL CHARACTERISTICS V DD =28Vdc,P out =23W(Avg.),I DQ = 1500 ma d, 64 QAM 3 / 4, 4 Bursts, 7 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF η D G ps IRL ACPR f, FREQUENCY (MHz) Figure 3. WiMAX Broadband P out = 23 Watts Avg. G ps, POWER GAIN (db) η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) V DD =28Vdc,P out =43W(Avg.),I DQ = 1500 ma d, 64 QAM 3 / 4, 4 Bursts, 7 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF η D G ps IRL ACPR f, FREQUENCY (MHz) Figure 4. WiMAX Broadband P out = 43 Watts Avg. G ps, POWER GAIN (db) η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) I DQ = 2250 ma 2000 ma 1500 ma 1200 ma 00 ma 1 V DD =28Vdc,I DQ = 1500 ma f1 = 2595 MHz, f2 = 2605 MHz Two--Tone Measurements, MHz Tone Spacing 0 P out, OUTPUT POWER (WATTS) PEP Figure 5. Two -Tone Power Gain versus Output Power 500 IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD =28Vdc,I DQ = 1500 ma f1 = 2595 MHz, f2 = 2605 MHz Two--Tone Measurements, MHz Tone Spacing 1 I DQ = 2250 ma 1200 ma 1500 ma 00 ma P out, OUTPUT POWER (WATTS) PEP 2000 ma 0 Figure 6. Third Order Intermodulation Distortion versus Output Power 200 6

7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,I DQ = 1500 ma f1 = 2595 MHz, f2 = 2605 MHz Two--Tone Measurements, MHz Tone Spacing 3rd Order 5th Order 7th Order 0 P out, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion Products versus Output Power 200 IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 5 W (PEP), I DQ = 1500 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2600 MHz IM3--U --40 IM3--L IM5--U --50 IM7--U IM7--L IM5--L TWO--TONE SPACING (MHz) Figure 8. Intermodulation Distortion Products versus Tone Spacing η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD =28Vdc,I DQ = 1500 ma --30_C f = 2600 MHz, d, 64 QAM 3 / 4 25_C 45 4 Bursts, 7 MHz Channel 85_C Bandwidth, Input Signal PAR = 9.5 db 85_C % Probability on CCDF 25_C _C G ps T C =--30_C _C --55 η D ACPR 85_C P out, OUTPUT POWER (WATTS) AVG. WiMAX Figure 9. WiMAX, ACPR, Power Gain and Drain Efficiency versus Output Power ACPR (dbc) G ps, POWER GAIN (db) G ps η D T C =--30_C 25_C 85_C V DD =28Vdc I DQ = 1500 ma f = 2600 MHz P out, OUTPUT POWER (WATTS) CW Figure. Power Gain and Drain Efficiency versus CW Output Power _C 25_C 50 85_C η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD =24V P out, OUTPUT POWER (WATTS) CW I DQ = 1500 ma f = 2600 MHz 28 V 175 Figure 11. Power Gain versus Output Power 32 V 200 7

8 WiMAX TEST SIGNAL 0 -- PROBABILITY (%) d, 64 QAM 3 / 4,4Bursts,7MHz Channel Bandwidth, Input Signal PAR = % Probability on CCDF Input Signal PEAK--TO--AVERAGE (db) Figure 12. OFDM d Test Signal (db) ACPR in 1 MHz Integrated BW MHz Channel BW 0 ACPR in 1 MHz Integrated BW f, FREQUENCY (MHz) Figure 13. WiMAX Spectrum Mask Specifications 8

9 Z o =5Ω f = 2700 MHz Z source f = 2500 MHz f = 2700 MHz Z load f = 2500 MHz f MHz V DD =28Vdc,I DQ = 1500 ma, P out =23WAvg. Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j3.4 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance 9

10 PACKAGE DIMENSIONS

11 11

12 12

13 13

14 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. R5 TAPE AND REEL OPTION The R5 tape and reel option for MRF7S27130H and MRF7S27130HS parts will be available for 2 years after release of MRF7S27130H and MRF7S27130HS., Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7S27130H and MRF7S27130HS in the R3 tape and reel option. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Sept Initial Release of Data Sheet 1 Dec Modified Fig. 13 to display Input Signal only, p. 8 Updated Fig. 14, WiMAX Spectrum Mask Specification, to reflect the distortion free input test signal versus the distortion loaded output signal, p. 8 2 Mar Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 Fig. 12, MTTF versus Junction Temperature removed, p. 8. Refer to the device s MTTF Calculator available at freescale.com/rfpower. Go to Design Resources > Software and Tools. Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p

15 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F , Shimo--Meguro, Meguro--ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 0022 China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc , All rights reserved. RF Document Device Number: DataMRF7S27130H Freescale Rev. 2, 3/2011Semiconductor 15