RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance: V DD =50Volts,I DQ = 900 ma, P out = 300 Watts, Power Gain 22 db Drain Efficiency 60% Capable of Handling :1 50 Vdc, 450 MHz, 300 Watts CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 V DD Operation Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225 C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MRF6V4300N Rev. 3, 4/20 MRF6V4300NR1 MRF6V4300NBR1-600 MHz, 300 W, 50 V LATERAL N -CHANNEL SINGLE -ENDED BROADBAND RF POWER MOSFETs CASE , STYLE 1 TO WB - 4 PLASTIC MRF6V4300NR1 CASE , STYLE 1 TO WB - 4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE -ENDED RF in /V GS RF out /V DS RF in /V GS RF out /V DS Table 1. Maximum Ratings (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +1 Vdc Gate--Source Voltage V GS --6.0, + Vdc Storage Temperature Range T stg to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., Inc., All rights reserved. 1

2 Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case Case Temperature 83 C, 300 W CW R θjc 0.24 C/W Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Test Methodology Charge Device Model (per JESD22--C1) Table 4. Moisture Sensitivity Level Class 1C (Minimum) A (Minimum) IV (Minimum) Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) Drain--Source Breakdown Voltage (I D = 150 ma, V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =50Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 0 Vdc, V GS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =Vdc,I D = 800 μadc) Gate Quiescent Voltage (V DD =50Vdc,I D = 900 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =Vdc,I D =2Adc) Dynamic Characteristics Reverse Transfer Capacitance (V DS =50Vdc± 30 1 MHz, V GS =0Vdc) Output Capacitance (V DS =50Vdc± 30 1 MHz, V GS =0Vdc) Input Capacitance (V DS =50Vdc,V GS =0Vdc± 30 1 MHz) I GSS μadc V (BR)DSS 1 Vdc I DSS 50 μadc I DSS 2.5 ma V GS(th) Vdc V GS(Q) Vdc V DS(on) 0.25 Vdc C rss 2.8 pf C oss 5 pf C iss 304 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD =50Vdc,I DQ = 900 ma, P out = 300 W,, CW Power Gain G ps db Drain Efficiency η D % Input Return Loss IRL db 1. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. 2

3 B3 V SUPPLY V BIAS + C1 C7 B1 C4 C8 R1 L2 C9 C5 C2 L4 C13 RF INPUT Z1 C11 C12 L1 Z2 Z3 Z4 Z5 Z6 C16 C17 C18 DUT Z7 L5 Z8 Z9 C20 C19 Z C21 C23 C22 C24 Z11 C25 C27 C26 C28 Z12 C15 Z13 RF OUTPUT C14 L3 C C6 B2 C3 V SUPPLY Z1 Z2 Z3 Z4 Z5 Z6 Z x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Arlon CuClad 250GX , 0.030, ε r =2.55 Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead Fair--Rite B2, B3 Long Ferrite Beads Fair--Rite C1 47 μf, 25 V, Tantalum Capacitor T491B476M025AT Kemet C2, C3 22 μf, 50 V, Chip Capacitors C5750JF1H226ZT TDK C4, C5, C6, C7 1 μf, 0 V, Chip Capacitors C3225JB2A5KT TDK C8, C9, C 15 nf, 0 V, Chip Capacitors C3225CH2A153JT TDK C11, C12, C13, C14, C pf, Chip Capacitors ATC0B241JT500XT ATC C pf, Chip Capacitor ATC0B9R1JT500XT ATC C17 15 pf, Chip Capacitor ATC0B150JT500XT ATC C18 51 pf, Chip Capacitor ATC0B5JT500XT ATC C19, C pf, Chip Capacitors ATC0B5R6JT500XT ATC C21, C22, C23, C pf, Chip Capacitors ATC0B4R3JT500XT ATC C25, C26, C27, C pf, Chip Capacitors ATC0B4R7JT500XT ATC L1 27 nh Inductor 1812SMS--27NJLC Coilcraft L2, L3 47 nh Inductors 1812SMS--47NJLC Coilcraft L4, L5 5 Turn, #18 AWG Inductors, Hand Wound Copper Wire R1 Ω, 1/4 W, Chip Resistor CRCW1206R1FKEA Vishay 3

4 C1 C7 B1 B3 C2 C4 C8 R1 L2 C9 C5 C12 ATC C13 L1 C20 C21 C22 C25 C26 C15 C11 L4 L5 C16 C17 C18 CUT OUT AREA L3 C19 C14 C23 C24 C27 C28 MRF6V4300N/NB Rev. 1 C C6 B2 C3 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout 4

5 TYPICAL CHARACTERISTICS 00 0 C iss C, CAPACITANCE (pf) 0 C oss C rss Measured with ±30 1 MHz V GS =0Vdc I D, DRAIN CURRENT (AMPS) T C =25 C V DS, DRAIN--SOURCE VOLTAGE (VOLTS) V DS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain -Source Voltage Figure 5. DC Safe Operating Area I D, DRAIN CURRENT (AMPS) V GS =3V 2.75 V 2.63 V 2.5 V ma 450 ma V V DD =50Vdc DRAIN VOLTAGE (VOLTS) P out, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage G ps, POWER GAIN (db) I DQ = 1350 ma 900 ma 1125 ma Figure 7. CW Power Gain versus Output Power IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 50 Vdc, f1 = 450 MHz, f2 = MHz Two--Tone Measurements, 0 khz Tone Spacing 650 ma 900 ma 1350 ma ma --60 I DQ = 450 ma 0 P out, OUTPUT POWER (WATTS) PEP Figure 8. Third Order Intermodulation Distortion versus Output Power 600 P out, OUTPUT POWER (dbm) P3dB = dbm (403 W) P1dB = dbm (327 W) V DD =50Vdc,I DQ = 900 ma P in, INPUT POWER (dbm) Ideal Actual Figure 9. CW Output Power versus Input Power 38 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) V 30 V V DD =20V V 40 V P out, OUTPUT POWER (WATTS) CW 45 V I DQ = 900 ma V Figure. Power Gain versus Output Power 400 P out, OUTPUT POWER (dbm) _C T C =--30_C P in, INPUT POWER (dbm) 85_C V DD =50Vdc I DQ = 900 ma Figure 11. Power Output versus Power Input _C 70 G ps, POWER GAIN (db) G ps 25_C η D T C =--30_C 85_C 85_C P out, OUTPUT POWER (WATTS) CW --30_C V DD =50Vdc I 20 DQ = 900 ma Figure 12. Power Gain and Drain Efficiency versus CW Output Power η D, DRAIN EFFICIENCY (%) MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) This above graph displays calculated MTTF in hours when the device is operated at V DD =50Vdc,P out = 300 W, and η D = 60%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 250 Figure 13. MTTF versus Junction Temperature 6

7 Z o =2Ω Z source Z load f MHz V DD =50Vdc,I DQ = 900 ma, P out = 300 W CW Z source Ω Z load Ω j j0.96 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance 7

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14 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 July 2008 Initial Release of Data Sheet 1 Oct Added Fig. 13, MTTF versus Junction Temperature, p. 6 2 Mar Corrected Z source, j5.93 to j1.26 and Z load, j5.5 to j0.96 in Fig. 14, Series Equivalent Source and Load Impedance data table and replotted data, p. 7 3 Apr. 20 Operating Junction Temperature increased from 200 C to 225 C in Maximum Ratings table, related Continuous use at maximum temperature will affect MTTF footnote added and changed 200 C to 225 C in Capable Plastic Package bullet, p. 1 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p

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