Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier

Transcription

1 Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small-signal, high linearity, general purpose applications. It is suitable for applications with frequencies from to 6 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Features Frequency: to 6 MHz P1dB: 16 9 MHz Small-Signal Gain: 19 9 MHz Third Order Output Intercept Point: 3 9 MHz Single 5 Volt Supply Internally Matched to 5 Ohms Low Cost SOT- 89 Surface Mount Package RoHS Compliant In Tape and Reel. T1 Suffix = 1 Units per 12 mm, 7 inch Reel. Document Number: Rev. 5, 3/28-6 MHz, 19 db 16 dbm InGaP HBT CASE , STYLE 1 SOT-89 PLASTIC Table 1. Typical Performance (1) Characteristic Symbol 9 MHz Small-Signal Gain (S21) Input Return Loss (S11) 214 MHz 35 MHz Unit G p db IRL db Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage V CC 7 V Supply Current I CC 25 ma RF Input Power P in 1 dbm Storage Temperature Range T stg -65 to +15 C Output Return Loss (S22) Power Compression Third Order Output Intercept Point ORL db P1db dbm IP dbm Junction Temperature (2) T J 15 C 2. For reliable operation, the junction temperature should not exceed 15 C. 1., T C = 25 C, 5 ohm system Table 3. Thermal Characteristics (,, T C = 25 C) Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case R θjc 77 C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955., Inc., All rights reserved. 1

2 Table 4. Electrical Characteristics (, 9 MHz, T C = 25 C, 5 ohm system, in Freescale Application Circuit) Characteristic Symbol Min Typ Max Unit Small-Signal Gain (S21) G p db Input Return Loss (S11) IRL -14 db Output Return Loss (S22) ORL -2 db Power 1dB Compression P1dB 16 dbm Third Order Output Intercept Point IP3 3 dbm Noise Figure NF 3.8 db Supply Current (1) I CC ma Supply Voltage (1) V CC 5 V 1. For reliable operation, the junction temperature should not exceed 15 C. 2

3 Table 5. Functional Pin Description Pin Number Pin Function 2 1 RF in 2 Ground 3 RF out /DC Supply Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22-A114) 1A (Minimum) Machine Model (per EIA/JESD 22-A115) A (Minimum) Charge Device Model (per JESD 22-C11) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C 3

4 5 OHM TYPICAL CHARACTERISTICS 25 G p, SMALL SIGNAL GAIN (db) T C = 85 C -4 C 25 C f, FREQUENCY (GHz) S11, S22 (db) S22 S f, FREQUENCY (GHz) 4 Figure 2. Small- Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 23 2 G p, SMALL SIGNAL GAIN (db) MHz 196 MHz 26 MHz 35 MHz 214 MHz P1dB, 1 db COMPRESSION POINT (dbm) P out, OUTPUT POWER (dbm) f, FREQUENCY (GHz) Figure 4. Small- Signal Gain versus Output Figure 5. P1dB versus Frequency Power I CC, COLLECTOR CURRENT (ma) V CC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) MHz Tone Spacing Figure 7. Third Order Output Intercept Point versus Frequency 4

5 5 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) f = 9 MHz 1 MHz Tone Spacing V CC, COLLECTOR VOLTAGE (V) Figure 8. Third Order Output Intercept Point versus Collector Voltage IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dbm) f = 9 MHz 1 MHz Tone Spacing T, TEMPERATURE ( C) Figure 9. Third Order Output Intercept Point versus Case Temperature IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) f = 9 MHz 1 MHz Tone Spacing P out, OUTPUT POWER (dbm) Figure 1. Third Order Intermodulation versus Output Power MTTF (YEARS) T J, JUNCTION TEMPERATURE ( C) NOTE: The MTTF is calculated with, Figure 11. MTTF versus Junction Temperature NF, NOISE FIGURE (db) ACPR, ADJACENT CHANNEL POWER RATIO (dbc) f = 214 MHz Single Carrier W CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 Probability (CCDF) f, FREQUENCY (GHz) Figure 12. Noise Figure versus Frequency P out, OUTPUT POWER (dbm) Figure 13. Single- Carrier W- CDMA Adjacent Channel Power Ratio versus Output Power 5

6 5 OHM APPLICATION CIRCUIT: 4-3 MHz V SUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 DUT Z3 Z4 Z5 RF OUTPUT C1 V CC C2 Z1, Z5.347 x.58 Microstrip Z2.575 x.58 Microstrip Z3.172 x.58 Microstrip Z4.43 x.58 Microstrip PCB Getek Grade ML2C,.31, ε r = 4.1 Figure Ohm Test Circuit Schematic 3 S21, S11, S22 (db) S21 S22 C1 R1 L1 C4 C3 C S f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure Ohm Test Circuit Component Layout Table 8. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3.1 μf Chip Capacitors C63C13J5RAC Kemet C4 1 pf Chip Capacitor C63C12J5RAC Kemet L1 47 nh Chip Inductor BK2125HM471-T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 6

7 5 OHM APPLICATION CIRCUIT: 3-36 MHz V SUPPLY R1 C3 C4 L1 RF INPUT Z1 Z2 DUT Z3 Z4 Z5 RF OUTPUT C1 V CC C2 Z1, Z5.347 x.58 Microstrip Z2.575 x.58 Microstrip Z3.172 x.58 Microstrip Z4.43 x.58 Microstrip PCB Getek Grade ML2C,.31, ε r = 4.1 Figure Ohm Test Circuit Schematic 3 2 S21 R1 S21, S11, S22 (db) 1 1 S22 C1 L1 C4 C3 C2 2 3 S f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency MMG3XX Rev 2 Figure Ohm Test Circuit Component Layout Table 9. 5 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pf Chip Capacitors C63C151J5RAC Kemet C3.1 μf Chip Capacitor C63C13J5RAC Kemet C4 1 pf Chip Capacitor C63C12J5RAC Kemet L1 56 nh Chip Inductor HK16856NJ-T Taiyo Yuden R1 Chip Resistor ERJ3GEYRV Panasonic 7

8 5 OHM TYPICAL CHARACTERISTICS Table 1. Common Emitter S-Parameters (,, T C = 25 C, 5 Ohm System) f S 11 S 21 S 12 S 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ (continued) 8

9 5 OHM TYPICAL CHARACTERISTICS Table 1. Common Emitter S-Parameters (,, T C = 25 C, 5 Ohm System) (continued) f S 11 S 21 S 12 S 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ

10 diameter Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS.381 x.762 MM PITCH. Figure 2. Recommended Mounting Configuration 1

11 PACKAGE DIMENSIONS 11

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14 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN31: General Purpose Amplifier Biasing The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 3 Mar. 27 Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 4 July 27 Replaced Case Outline with , Issue D, p. 1, Case updated to add missing dimension for Pin 1 and Pin 3. 5 Mar. 28 Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 Corrected Fig. 13, Single-Carrier W-CDMA Adjacent Channel Power Ratio versus Output Power y-axis (ACPR) unit of measure to dbc, p. 5 Corrected S-Parameter table frequency column label to read MHz versus GHz and corrected frequency values from GHz to MHz, p. 8, 9 14

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