Characteristic Symbol Value (1,2) Unit. Test Methodology. Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115)
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1 Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical GSM Performance: V DD =28Volts,I DQ = 800 ma, P out = 72 Watts CW Frequency G ps (db) (%) 1805 MHz MHz Document Number: MRF8S18120H Rev. 1, 10/2010 MRF8S18120HR3 MRF8S18120HSR MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N -CHANNEL RF POWER MOSFETs 1880 MHz Capable of Handling 7:1 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 db Input Overdrive from Rated P out ) Typical P 1 db Compression Point 120 Watts CW Typical GSM EDGE Performance: V DD =28Volts,I DQ = 800 ma, P out = 46 Watts Avg. Frequency G ps (db) (%) 400 khz (dbc) 600 khz (dbc) EVM (% rms) 1805 MHz MHz MHz CASE , STYLE 1 NI -780 MRF8S18120HR3 CASE 465A -06, STYLE 1 NI -780S MRF8S18120HSR3 Features Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --0.5, +65 Vdc Gate--Source Voltage V GS --6.0, +10 Vdc Operating Voltage V DD 32, +0 Vdc Storage Temperature Range T stg --65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., Inc., All rights reserved. 1
2 Table 2. Thermal Characteristics Thermal Resistance, Junction to Case Case Temperature 79 C, 72 W CW, 28 Vdc, I DQ = 800 ma Case Temperature 79 C, 120 W CW, 28 Vdc, I DQ = 800 ma Table 3. ESD Protection Characteristics Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Characteristic Symbol Value (1,2) Unit Test Methodology Charge Device Model (per JESD22--C101) R θjc Class 2 (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit C/W Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =65Vdc,V GS =0Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =0Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc) On Characteristics Gate Threshold Voltage (V DS =10Vdc,I D = 260 μadc) Gate Quiescent Voltage (V DD =28Vdc,I D = 800 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =10Vdc,I D =2.3Adc) I DSS 10 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 800 ma, P out = 72 W CW, f = 1805 MHz Power Gain G ps db Drain Efficiency % Input Return Loss IRL db P 1 db Compression Point, CW P1dB 112 W Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 800 ma, P out =72WCW Frequency G ps (db) 1805 MHz MHz MHz MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Part internally matched both on input and output. (continued) (%) IRL (db) 2
3 Table 4. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 800 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 120 W IMD 94 W PEP, P out where IMD Third Order Intermodulation 30 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 10 MHz VBW res 35 MHz Gain Flatness in 75 MHz P out =72WCW G F 0.5 db Gain Variation over Temperature (--30 C to+85 C) Output Power Variation over Temperature (--30 C to+85 C) G 0.01 db/ C P1dB db/ C Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V DD =28Vdc,I DQ = 800 ma, P out =46WAvg., MHz EDGE Modulation Frequency G ps (db) (%) 400 khz (dbc) 600 khz (dbc) EVM (% rms) 1805 MHz MHz MHz
4 R2 C3 C9 C10 C13 C8 C7 C6 C5 C4 R1 C11 C12 C1 CUT OUT AREA C2 MRF8S18120 Rev. 2 Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 12 pf Chip Capacitors ATC100B120JT500XT ATC C3, C8 9.1 pf Chip Capacitors ATC100B9R1CT500XT ATC C4 10 nf Chip Capacitor C1825C103K1GAC--TU Kemet C5 8.2 pf Chip Capacitor ATC100B8R2CT500XT ATC C6, C9 2.2 μf, 100 V Chip Capacitors C3225X7R2A225KT TDK C7 47 μf, 16 V Tantalum Capacitor T491D476K016AT Kemet C10, C11, C12 10 μf, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C μf, 63 V Electrolytic Capacitor MCRH63V337M13X21--RH Multicomp R1 10 Ω, 1/4 W Chip Resistor CRCW120610R0JNEA Vishay R Ω, 1/4 W Chip Resistor CRCW12064R75FNEA Vishay PCB 0.030, ε r = GX Arlon 4
5 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) V DD =28Vdc,P out =72WCW,I DQ = 800 ma IRL G ps f, FREQUENCY (MHz) Figure 2. Power Gain, Input Return Loss and Drain Efficiency versus P out = 72 Watts CW 45 35, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) 21 V DD =28Vdc,P out =46WAvg. 20 I DQ = 800 ma, EDGE Modulation G ps IRL 16 2 EVM f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss, EVM and Drain Efficiency versus P out = 46 Watts Avg , DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) IRL, INPUT RETURN LOSS (db) IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 94 W (PEP) I DQ = 800 ma, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz IM3--L IM7--L IM3--U IM5--U IM5--L IM7--U TWO--TONE SPACING (MHz) 100 G ps, POWER GAIN (db) G ps f = 1880 MHz 1840 MHz 1805 MHz 1840 MHz 1880 MHz 1805 MHz 15 V DD =28Vdc I DQ = 800 ma P out, OUTPUT POWER (WATTS) CW , DRAIN EFFICIENCY (%) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing Figure 5. Power Gain and Drain Efficiency versus Output Power 5
6 EVM, ERROR VECTOR MAGNITUDE (% rms) V DD =28Vdc,I DQ = 800 ma EDGE Modulation 1820 P out =72WAvg W Avg. 25 W Avg f, FREQUENCY (MHz) Figure 6. EVM versus Frequency TYPICAL CHARACTERISTICS SPECTRAL 400 khz (dbc) V DD =28Vdc,I DQ = 800 ma EDGE Modulation 1840 MHz P out, OUTPUT POWER (WATTS) f = 1880 MHz 1805 MHz Figure 7. Spectral Regrowth at 400 khz versus Output Power SPECTRAL 600 khz (dbc) V DD =28Vdc,I DQ = 800 ma EDGE Modulation MHz f = 1880 MHz 1805 MHz EVM, ERROR VECTOR MAGNITUDE (% rms) MHz V DD =28Vdc,I DQ = 800 ma EDGE Modulation MHz EVM f = 1880 MHz 1840 MHz , DRAIN EFFICIENCY (%) P out, OUTPUT POWER (WATTS) P out, OUTPUT POWER (WATTS) AVG. Figure 8. Spectral Regrowth at 600 khz versus Output Power Figure 9. EVM and Drain Efficiency versus Output Power 20 0 Gain GAIN (db) IRL (db) 5 V DD =28Vdc P in =0dBm I DQ = 800 ma IRL f, FREQUENCY (MHz) Figure 10. Broadband Frequency Response 6
7 GSM TEST SIGNAL (db) Reference Power 400 khz 600 khz Center 1.96 GHz VWB = 30 khz Sweep Time = 70 ms RBW = 30 khz 400 khz 600 khz 200 khz Span 2 MHz Figure 11. EDGE Spectrum f MHz V DD =28Vdc,I DQ = 800 ma, P out =72WCW Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j0.06 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance 7
8 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS P out, OUTPUT POWER (dbm) V DD =28Vdc,I DQ = 800 ma, Pulsed CW, 10 μsec(on), 10% Duty Cycle Actual f = 1840 MHz f = 1800 MHz P in, INPUT POWER (dbm) f = 1840 MHz f = 1880 MHz f = 1800 MHz Ideal f = 1880 MHz NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output 28 V f (MHz) P1dB P3dB Watts dbm Watts dbm f (MHz) Test Impedances per Compression Level Z source Ω Z load Ω 1805 P1dB j j P1dB j j P1dB j j2.74 Figure 13. Pulsed CW Output Power versus Input 28 V 8
9 PACKAGE DIMENSIONS 9
10 10
11 11
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13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 0 Sept Initial Release of Data Sheet 1 Oct Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of the device, p. 2 13
14 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed:, Inc. Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F , Shimo--Meguro, Meguro--ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing China support.asia@freescale.com For Literature Requests Only: Literature Distribution Center or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Document Number: MRF8S18120H 14 Rev. 1, 10/2010
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Technical Data Document Number: Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications. It uses Freescale s newest High Voltage
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