RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs

Transcription

1 Technical Data RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 18 to 2 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application Typical GSM Performance:, I DQ = 6 ma, P out = 6 Watts CW, f = 199 MHz Power Gain 15 db Drain Efficiency - 5% GSM EDGE Application Typical GSM EDGE Performance: V DD = 26 Volts, I DQ = 45 ma, P out = 25 Watts Avg., Full Frequency Band ( MHz or MHz) Power Gain 15.5 db Spectral 4 khz Offset = -62 dbc Spectral 6 khz Offset = -76 dbc EVM 2% rms Capable of Handling 5:1 26 Vdc, 199 MHz, 6 Watts CW Output Power Features Characterized with Series Equivalent Large- Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 225 C Capable Plastic Package N Suffix Indicates Lead- Free Terminations. RoHS Compliant. In Tape and Reel. R1 Suffix = 5 Units per 44 mm, 13 inch Reel. Document Number: MRF6S186N Rev. 4, 12/28 MRF6S186NR1 MRF6S186NBR MHz, 6 W, 26 V GSM/GSM EDGE LATERAL N- CHANNEL RF POWER MOSFETs CASE , STYLE 1 TO-27 WB-4 PLASTIC MRF6S186NR1 CASE , STYLE 1 TO-272 WB-4 PLASTIC MRF6S186NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS -.5, +68 Vdc Gate-Source Voltage V GS -.5, +12 Vdc Storage Temperature Range T stg - 65 to +15 C Case Operating Temperature T C 15 C Operating Junction Temperature (1,2) T J 225 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 8 C, 6 W CW Case Temperature 77 C, 25 W CW R θjc C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes - AN1955., Inc., 26, 28. All rights reserved. 1

2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22- A114) 1B (Minimum) Machine Model (per EIA/JESD22- A115) A (Minimum) Charge Device Model (per JESD22- C1) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22- A113, IPC/JEDEC J- STD C Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = Vdc) Gate- Source Leakage Current (V GS = 5 Vdc, V DS = Vdc) On Characteristics Gate Threshold Voltage (V DS = Vdc, I D = 2 μadc) Gate Quiescent Voltage (, I D = 6 madc, Measured in Functional Test) Drain- Source On- Voltage (V GS = Vdc, I D = 2 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (V DS = 26 Vdc ± 3 1 MHz, V GS = Vdc) I DSS μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on).24 Vdc C rss 1.5 pf Functional Tests (In Freescale Test Fixture, 5 ohm system), I DQ = 6 ma, P out = 6 W CW, f = 199 MHz Power Gain G ps db Drain Efficiency η D 48 5 % Input Return Loss IRL db P 1 db Compression Point P1dB 6 65 W Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 5 ohm system), I DQ = 45 ma, P out = 25 W Avg., MHz or MHz, EDGE Modulation Power Gain G ps 15.5 db Drain Efficiency η D 32 % Error Vector Magnitude EVM 2 % rms Spectral Regrowth at 4 khz Offset SR1-62 dbc Spectral Regrowth at 6 khz Offset SR2-76 dbc Typical CW Performances (In Freescale Broadband Test Fixture, 5 ohm system), I DQ = 6 ma, P out = 6 W, MHz or MHz Power Gain G ps 15 db Drain Efficiency η D 5 % Input Return Loss IRL -12 db P 1 db Compression Point, CW P1dB 65 W 1. Part is internally matched both on input and output. 2

3 V BIAS R1 R2 C1 Z6 C2 C9 C + C11 V SUPPLY Z13 RF INPUT Z1 C3 Z2 C5 Z3 C6 R3 Z4 Z5 Z7 DUT Z8 C7 Z9 Z Z11 C8 C4 Z12 RF OUTPUT Z1.25 x.83 Microstrip Z2*.95 x.83 Microstrip Z3*.25 x.83 Microstrip Z4*.315 x.83 Microstrip Z5.365 x 1. Microstrip Z6.68 x.8 Microstrip Z7, Z8.115 x 1. Microstrip Z9.485 x 1. Microstrip Z*.5 x.83 Microstrip Z11*.895 x.83 Microstrip Z12.25 x.83 Microstrip Z13.2 x.8 Microstrip PCB Taconic TLX8-3,.3, ε r = 2.55 * Variable for tuning Figure 1. MRF6S186NR1(NBR1) Test Circuit Schematic 19 MHz Table 6. MRF6S186NR1(NBR1) Test Circuit Component Designations and Values 19 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pf Chip Capacitors ATCB6R8CT5XT ATC C5 1.5 pf Chip Capacitor ATCB1R5BT5XT ATC C6 1.8 pf Chip Capacitor ATCB1R8BT5XT ATC C7, C8 1 pf Chip Capacitors ATCB1RBT5XT ATC C9, C μf Chip Capacitors C575X5R1H6MT TDK C11 22 μf, 63 V Electrolytic Capacitor, Radial Vishay R1, R2 k, 1/4 W Chip Resistors CRCW1262FKEA Vishay R3, 1/4 W Chip Resistor CRCW126RFKEA Vishay 3

4 C11 V GS R1 V DS R2 C1 C2 C5 R3 C7 C9 C C3 C6 CUT OUT AREA C8 C4 MRF6S186N/NB Rev. Figure 2. MRF6S186NR1(NBR1) Test Circuit Component Layout 19 MHz 4

5 TYPICAL CHARACTERISTICS 19 MHz G ps, POWER GAIN (db) η D G ps IRL f, FREQUENCY (MHz) I DQ = 6 ma Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus P out = 6 Watts η D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) η D IRL G ps f, FREQUENCY (MHz) I DQ = 6 ma Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus P out = 3 Watts 34 η D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) I DQ = 9 ma 75 ma 6 ma 45 ma 3 ma f = 196 MHz P out, OUTPUT POWER (WATTS) G ps, POWER GAIN (db) V P out, OUTPUT POWER (WATTS) CW I DQ = 6 ma f = 196 MHz 26 V V DD = 32 V Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 5

6 TYPICAL CHARACTERISTICS 19 MHz G ps, POWER GAIN (db) T C = 3 C 25 C 85 C G ps η D I DQ = 6 ma f = 196 MHz P out, OUTPUT POWER (WATTS) CW 25 C 85 C 3 C Figure 7. Power Gain and Drain Efficiency versus CW Output Power η D, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) I DQ = 45 ma f, FREQUENCY (MHz) Figure 8. EVM versus Frequency P out = 35 W Avg. 25 W Avg. W Avg EVM, ERROR VECTOR MAGNITUDE (% rms) 12 6 T C = 3 C, 25 C I DQ = 45 ma 5 f = 196 MHz 85 C EDGE Modulation 8 4 η D EVM 85 C P out, OUTPUT POWER (WATTS) AVG. 3 C 25 C 2 η D, DRAIN EFFICIENCY (%) SPECTRAL 4 khz AND 6 khz (dbc) khz 6 khz W Avg. W Avg. 35 W Avg. 25 W Avg f, FREQUENCY (MHz) P out = 35 W Avg. I DQ = 45 ma f = 196 MHz EDGE Modulation W Avg. Figure 9. EVM and Drain Efficiency versus Output Power Figure. Spectral Regrowth at 4 khz and 6 khz versus Frequency SPECTRAL 4 khz (dbc) I DQ = 45 ma f = 196 MHz EDGE Modulation 85 C T C = 3 C 25 C P out, OUTPUT POWER (WATTS) AVG. Figure 11. Spectral Regrowth at 4 khz versus Output Power SPECTRAL 6 khz (dbc) I DQ = 45 ma f = 196 MHz EDGE Modulation T C = 85 C 3 C 25 C P out, OUTPUT POWER (WATTS) AVG. Figure 12. Spectral Regrowth at 6 khz versus Output Power 6

7 TYPICAL CHARACTERISTICS 8 7 MTTF (HOURS) This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 6 W CW, and η D = 5%. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature GSM TEST SIGNAL (db) Reference Power 4 khz 6 khz Center 1.96 GHz VBW = 3 khz Sweep Time = 7 ms RBW = 3 khz 4 khz 6 khz 2 khz Span 2 MHz Figure 14. EDGE Spectrum 7

8 Z o = Ω f = 193 MHz Z source f = 199 MHz f = 199 MHz Z load f = 193 MHz, I DQ = 6 ma, P out = 6 W CW f MHz Z source Ω Z load Ω j j j j j j4.54 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance 19 MHz 8

9 V BIAS R1 R2 C1 Z6 C2 C C11 + C12 V SUPPLY Z14 RF INPUT Z1 C3 Z2 C5 Z3 R3 C6 Z4 Z5 Z7 C7 Z8 DUT Z9 Z Z11 C8 C9 Z12 C4 Z13 RF OUTPUT Z1.25 x.83 Microstrip Z2*.32 x.83 Microstrip Z3*.66 x.83 Microstrip Z4*.535 x.83 Microstrip Z5.365 x 1. Microstrip Z6.86 x.8 Microstrip Z7, Z8.115 x 1. Microstrip Z9.485 x 1. Microstrip Z*.42 x.83 Microstrip Z11*.23 x.83 Microstrip Z12*.745 x.83 Microstrip Z13.25 x.83 Microstrip Z14.64 x.8 Microstrip PCB Taconic TLX8-3,.3, ε r = 2.55 * Variable for tuning Figure 16. MRF6S186NR1(NBR1) Test Circuit Schematic 18 MHz Table 7. MRF6S186NR1(NBR1) Test Circuit Component Designations and Values 18 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pf Chip Capacitors ATCB6R8CT5XT ATC C5.8 pf Chip Capacitor ATCBR8BT5XT ATC C6, C9.5 pf Chip Capacitors ATCBR5BT5XT ATC C7 2.2 pf Chip Capacitor ATCB2R2BT5XT ATC C8 1.5 pf Chip Capacitor ATCB1R5BT5XT ATC C, C11 μf Chip Capacitors C575X5R1H6MT TDK C12 22 μf, 63 V Electrolytic Capacitor, Radial Vishay R1, R2 k, 1/4 W Chip Resistors CRCW1262FKEA Vishay R3, 1/4 W Chip Resistor CRCW126RFKEA Vishay 9

10 V GS R1 C12 V DS R2 C1 C2 C6 R3 C C11 C3 C5 C7 CUT OUT AREA C8 C9 C4 MRF6S186N/NB Rev. Figure 17. MRF6S186NR1(NBR1) Test Circuit Component Layout 18 MHz

11 TYPICAL CHARACTERISTICS 18 MHz G ps, POWER GAIN (db) η D IRL I DQ = 6 ma f, FREQUENCY (MHz) Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus P out = 6 Watts G ps η D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) G ps η D IRL 35 I DQ = 6 ma f, FREQUENCY (MHz) Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus P out = 3 Watts η D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (db) EVM, ERROR VECTOR MAGNITUDE (% rms) W Avg. 182 P out = 35 W Avg W Avg. 186 f, FREQUENCY (MHz) 188 I DQ = 45 ma EVM, ERROR VECTOR MAGNITUDE (% rms) I DQ = 45 ma f = 186 MHz EDGE Modulation η D T C = 25 C EVM P out, OUTPUT POWER (WATTS) AVG η D, DRAIN EFFICIENCY (%) Figure 2. EVM versus Frequency Figure 21. EVM and Drain Efficiency versus Output Power 11

12 TYPICAL CHARACTERISTICS 18 MHz SPECTRAL 4 khz AND 6 khz (dbc) P out = 35 W Avg. 25 W Avg. 15 W Avg. 4 khz 35 W Avg. 25 W Avg. 6 khz W Avg f, FREQUENCY (MHz) I DQ = 45 ma EDGE Modulation Figure 22. Spectral Regrowth at 4 khz and 6 khz versus Frequency 45 6 SPECTRAL 4 khz (dbc) T C = 25 C I DQ = 45 ma f = 196 MHz EDGE Modulation SPECTRAL 6 khz (dbc) T C = 25 C I DQ = 45 ma f = 196 MHz EDGE Modulation P out, OUTPUT POWER (WATTS) AVG. P out, OUTPUT POWER (WATTS) AVG. Figure 23. Spectral Regrowth at 4 khz versus Output Power Figure 24. Spectral Regrowth at 6 khz versus Output Power 12

13 Z o = Ω f = 188 MHz f = 185 MHz Z load f = 185 MHz f = 188 MHz Z source, I DQ = 6 ma, P out = 65 W CW f MHz Z source Ω j j j7.21 Z load Ω j j j4.45 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 25. Series Equivalent Source and Load Impedance 18 MHz 13

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20 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes AN197: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description 4 Dec. 28 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +15 for standardization across products, p. 1 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 15 C, p. 1 Operating Junction Temperature increased from 2 C to 225 C in Maximum Ratings table, related Continuous use at maximum temperature will affect MTTF footnote added and changed 2 C to 225 C in Capable Plastic Package bullet, p. 1 Corrected V DS to V DD in the RF test condition voltage callout for V GS(Q), and added Measured in Functional Test, On Characteristics table, p. 2 Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 9 Removed lower voltage tests from Fig. 6, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 5 Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps 2 and listed operating characteristics and location of MTTF calculator for device, p. 7 Replaced Case Outline , Issue C, with , Issue D, p Added pin numbers 1 through 4 on Sheet 1. Replaced Case Outline , Issue D, with , Issue E, p Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. Added Product Documentation and Revision History, p. 2 2

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