RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

Transcription

1 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 96 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: V DD =28Volts,I DQ = 14 ma, P out = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 Probability on CCDF. Frequency η D (%) Output PAR ACPR (dbc) 92 MHz MHz MHz Capable of Handling 1:1 32 Vdc, 94 MHz, 33 Watts CW Output Power (3 db Input Overdrive from Rated P out ), Designed for Enhanced Ruggedness Typical P 1 db Compression Point 23 Watts CW 88 MHz Typical Single--Carrier W--CDMA Performance: V DD =28Volts,I DQ = 14 ma, P out = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 Probability on CCDF. Document Number: MRF8S9232N Rev., 1/ MHz, 63 W AVG., 28 V SINGLE W -CDMA LATERAL N -CHANNEL RF POWER MOSFET CASE 221-3, STYLE 1 OM PLASTIC Frequency η D (%) Output PAR ACPR (dbc) 865 MHz MHz MHz Features 1% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation 225 C Capable Plastic Package Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 25 Units, 32 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V DSS --.5, +7 Vdc Gate--Source Voltage V GS --6., +1 Vdc Operating Voltage V DD 32, + Vdc Storage Temperature Range T stg --65 to +15 C Case Operating Temperature T C 15 C Operating Junction Temperature (1,2) T J 225 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product., 211. All rights reserved. 1

2 Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case R θjc C/W Case Temperature 76 C, 63 W CW, 28 Vdc, I DQ = 14 ma, 96 MHz Case Temperature 82 C, 23 W CW, 28 Vdc, I DQ = 14 ma, 96 MHz Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C11) Table 4. Moisture Sensitivity Level Class Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD C Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit B IV Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS =7Vdc,V GS =Vdc) Zero Gate Voltage Drain Leakage Current (V DS =28Vdc,V GS =Vdc) Gate--Source Leakage Current (V GS =5Vdc,V DS =Vdc) On Characteristics Gate Threshold Voltage (V DS =1Vdc,I D = 92 μadc) Gate Quiescent Voltage (V DD =28Vdc,I D = 14 madc, Measured in Functional Test) Drain--Source On--Voltage (V GS =1Vdc,I D =3.4Adc) I DSS 1 μadc I DSS 1 μadc I GSS 1 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc Functional Tests (3) (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 14 ma, P out = 63 W Avg., f = 96 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHzOffset. Power Gain db Drain Efficiency η D % Output Peak--to--Average Probability on CCDF PAR db Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db Typical Broadband Performance (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 14 ma, P out =63WAvg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHz Offset. Frequency η D (%) Output PAR ACPR (dbc) 92 MHz MHz MHz MTTF calculator available at Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to Select Documentation/Application Notes -- AN Part internally matched both on input and output. (continued) IRL 2

3 Table 5. Electrical Characteristics (T A =25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 14 ma, MHz Bandwidth P 1 db Compression Point, CW P1dB 23 W IMD 23 W PEP, P out where IMD Third Order Intermodulation 3 dbc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 db) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) IMD sym 2 MHz VBW res 65 MHz Gain Flatness in 4 MHz P out =63WAvg. G F.3 db Gain Variation over Temperature (--3 C to+85 C) Output Power Variation over Temperature (--3 C to+85 C) G.19 db/ C P1dB.23 db/ C Typical Broadband Performance 88 MHz (In Freescale 88 MHz Test Fixture, 5 ohm system) V DD =28Vdc,I DQ = 14 ma, P out = 63 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 Probability on CCDF. ACPR measured in 3.84 MHz Channel ±5 MHzOffset. Frequency η D (%) Output PAR ACPR (dbc) 865 MHz MHz MHz IRL 3

4 V GG C22 V DD C29 B1 C2 C25 C5 C9 C1 C11 C6 R1 C1* C12 C18 C19 C23* C26 C24 C3 C4 C7 C27 C28 C8 R2 CUT OUT AREA C13 C14 C15 C16 C2 C21 C3 MRF8S9232N Rev. 1 C17 *C1 and C23 are mounted vertically. Figure 1. Test Circuit Component Layout Table 6. Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead MPZ212S3AT TDK C1, C pf Chip Capacitors ATC1B4R7CT5XT ATC C2, C1, C11, C15, C16, C26 1 μf, 5 V Chip Capacitors C575X7R1H16K TDK C3 1.2 pf Chip Capacitor ATC1B1R2CT5XT ATC C4, C7 2. pf Chip Capacitors ATC1B2RBT5XT ATC C5, C9, C14, C23, C28 39 pf Chip Capacitors ATC1B39JT5XT ATC C6, C8 3.3 pf Chip Capacitors ATC1B3R3BT5XT ATC C12, C pf Chip Capacitors ATC1B5R1BT5XT ATC C17, C22 47 μf, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C18.8 pf Chip Capacitor ATC1BR8BT5XT ATC C2 1.7 pf Chip Capacitor ATC1B1R7BT5XT ATC C pf Chip Capacitor ATC1B1R5BT5XT ATC C24 62 pf Chip Capacitor ATC1B62JT5XT ATC C25, C27 33 nf 1 V Chip Capacitors C121C334K1RAC Kemet C29, C3 22 nf 5 V Chip Capacitors GRM32DR72E224KW1L TDK R1, R2 2 Ω, 1/4 W Chip Resistors CRCW1262RFNEA Vishay PCB.2, ε r =3.5 RO435B Rogers 4

5 TYPICAL CHARACTERISTICS, POWER GAIN V DD =28Vdc,P out =63W(Avg.),I DQ = 14 ma η 17.8 D Single--Carrier W--CDMA MHz Channel Bandwidth --32 Input Signal PAR = % Probability on CCDF --34 IRL PARC ACPR f, FREQUENCY (MHz) Figure 2. Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 63 Watts Avg. η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS PARC IMD, INTERMODULATION DISTORTION (dbc) V DD =28Vdc,P out = 23 W (PEP), I DQ = 14 ma Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 94 MHz IM7--L IM7--U IM5--L IM5--U IM3--L IM3--U TWO--TONE SPACING (MHz) Figure 3. Intermodulation Distortion Products versus Two -Tone Spacing, POWER GAIN OUTPUT COMPRESSION AT.1% PROBABILITY ON CCDF V DD =28Vdc,I DQ = 14 ma, f = 94 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 Probability on CCDF --1 db = 54 W η D ACPR --2 db = 76 W PARC --3 db = 14 W η D, DRAIN EFFICIENCY (%) ACPR (dbc) P out, OUTPUT POWER (WATTS) Figure 4. Output Peak -to -Average Ratio Compression (PARC) versus Output Power 5

6 , POWER GAIN MHz TYPICAL CHARACTERISTICS 96 MHz 92 MHz V DD =28Vdc,I DQ = 14 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 Probability on CCDF 96 MHz 94 MHz P out, OUTPUT POWER (WATTS) AVG. ACPR MHz MHz 94 MHz Figure 5. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power η D 92 MHz η D, DRAIN EFFICIENCY (%) ACPR (dbc) Gain 2 1 GAIN V DD =28Vdc P in =dbm I DQ = 14 ma IRL f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W -CDMA TEST SIGNAL IRL 1 1 PROBABILITY (%) Input Signal W--CDMA. ACPR Measured in 3.84 MHz Channel ±5 MHz Offset. Input Signal PAR = 7.5 Probability on CCDF PEAK--TO--AVERAGE Figure 7. CCDF W -CDMA IQ Magnitude Clipping, Single -Carrier Test Signal ACPR in 3.84 MHz Integrated BW 3.84 MHz Channel BW +ACPRin3.84MHz Integrated BW f, FREQUENCY (MHz) Figure 8. Single -Carrier W -CDMA Spectrum 6

7 V DD =28Vdc,I DQ = 14 ma, P out =63WAvg. f MHz Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j.21 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance 7

8 f (MHz) V DD =28Vdc,I DQ = 115 ma, P out =63WAvg., Pulsed CW, 1 μsec(on), 1% Duty Cycle Z source (Ω) Z load (1) (Ω) P1dB Max Output Power P3dB (dbm) (W) η D (%) (dbm) (W) η D (%) j j j j j j (1) Load impedance for optimum P1dB power. Z source = Impedance as measured from gate contact to ground. Z load = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 1. Load Pull Performance Maximum P1dB Tuning V DD =28Vdc,I DQ = 115 ma, P out =63WAvg., Pulsed CW, 1 μsec(on), 1% Duty Cycle Max Drain Efficiency f Z source Z (1) load P1dB P3dB (MHz) (Ω) (Ω) (dbm) (W) η D (%) (dbm) (W) η D (%) j j j j j j (1) Load impedance for optimum P1dB efficiency. Z source = Impedance as measured from gate contact to ground. Z load = Impedance as measured from drain contact to ground. Input Load Pull Tuner Device Under Test Output Load Pull Tuner Z source Z load Figure 11. Load Pull Performance Maximum Efficiency Tuning 8

9 V GG C22 V DD C29 B1 C2 C25 C5 C9 C1 C11 C6 R1 C1* C3 C12 C19 C23* C26 C24 C4 C27 C7 C28 C8 R2 CUT OUT AREA C13 C14 C15 C16 C2 C21 C18 *C1 and C23 are mounted vertically. MRF8S9232N Rev. 1 C17 Figure 12. Test Circuit Component Layout MHz Table 7. Test Circuit Component Designations and Values MHz Part Description Part Number Manufacturer B1 Short Ferrite Bead MPZ212S3AT TDK C1, C pf Chip Capacitors ATC1B4R7CT5XT ATC C2, C1, C11, C15, C16, C26 1 μf, 5 V Chip Capacitors C575X7R1H16K TDK C3 2. pf Chip Capacitor ATC1B2RBT5XT ATC C4 1.8 pf Chip Capacitor ATC1B1R8CT5XT ATC C5, C9, C14, C23, C28 39 pf Chip Capacitors ATC1B39JT5XT ATC C6, C8 3.3 pf Chip Capacitors ATC1B3R3BT5XT ATC C7 3.9 pf Chip Capacitor ATC1B3R9BT5XT ATC C12, C pf Chip Capacitors ATC1B5R1BT5XT ATC C17, C22 47 μf, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp C18, C29 22 nf 5 V Chip Capacitors GRM32DR72E224KW1L TDK C2 1.7 pf Chip Capacitor ATC1B1R7BT5XT ATC C pf Chip Capacitor ATC1B1R5BT5XT ATC C24 62 pf Chip Capacitor ATC1B62JT5XT ATC C25, C27 33 nf 1 V Chip Capacitors C121C334K1RAC Kemet R1, R2 2 Ω, 1/4 W Chip Resistors CRCW1262RFNEA Vishay PCB.2, ε r =3.5 RO435B Rogers 9

10 TYPICAL CHARACTERISTICS MHz, POWER GAIN V DD =28Vdc,P out =63W(Avg.),I DQ = 14 ma Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth η 19.5 D 3.84 MHz Channel Bandwidth Input Signal PAR = % Probability on CCDF PARC ACPR IRL f, FREQUENCY (MHz) Figure 13. Output Peak -to -Average Ratio Compression (PARC) Broadband P out = 63 Watts Avg. η D, DRAIN EFFICIENCY (%) ACPR (dbc) IRL, INPUT RETURN LOSS PARC 2 19 V DD =28Vdc,I DQ = 14 ma, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth η D , POWER GAIN MHz 865 MHz 895 MHz 895 MHz 88 MHz 865 MHz P out, OUTPUT POWER (WATTS) AVG. ACPR Input Signal PAR = 7.5 db Probability on CCDF Figure 14. Single -Carrier W -CDMA Power Gain, Drain Efficiency and ACPR versus Output Power η D, DRAIN EFFICIENCY (%) ACPR (dbc) Gain 2 1 GAIN 12 8 IRL --1 IRL V DD =28Vdc P in =dbm --2 I DQ = 14 ma f, FREQUENCY (MHz) Figure 15. Broadband Frequency Response 1

11 V DD =28Vdc,I DQ = 14 ma, P out =63WAvg. f MHz Z source Ω Z load Ω j j j j j j j j j j j j j j j j j j.4 Z source = Test circuit impedance as measured from gate to ground. Z load = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MHz 11

12 PACKAGE DIMENSIONS 12

13 13

14 14

15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents and software to aid your design process. Application Notes AN197: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model.s2p File For Software, do a Part Number search at and select the Part Number link. Go to the Software & Tools tab on the part s Product Summary page to download the respective tool. The following table summarizes revisions to this document. REVISION HISTORY Revision Date Description Oct. 211 Initial Release of Data Sheet 15

16 How to Reach Us: Home Page: Web Support: USA/Europe or Locations Not Listed: Technical Information Center, EL East Elliot Road Tempe, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F , Shimo--Meguro, Meguro--ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 122 China support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of All other product or service names are the property of their respective owners All rights reserved. Document Number: MRF8S9232N 16 Rev., 1/211