RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Transcription

1 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz The high gain and broadband performance of this device makes it ideal for large- signal, common- source amplifier applications in 28 volt base station equipment Typical Single-Carrier N-CDMA 880 MHz, V DD = 28 Volts, I DQ = 350 ma, P out = 10 Watts Avg, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = MHz PAR = % Probability on CCDF Power Gain 221 db Drain Efficiency 32% 750 khz Offset -46 dbc in 30 khz Channel Bandwidth Capable of Handling 5:1 32 Vdc, 880 MHz, 3 db Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application Typical GSM EDGE Performance: V DD = 28 Volts, I DQ = 350 ma, P out = 16 Watts Avg, Full Frequency Band ( MHz) Power Gain 20 db Drain Efficiency 46% Spectral 400 khz Offset = -62 dbc Spectral 600 khz Offset = -78 dbc EVM 15% rms GSM Application Typical GSM Performance: V DD = 28 Volts, I DQ = 350 ma, P out = 45 Watts, Full Frequency Band ( MHz) Power Gain 20 db Drain Efficiency 68% Features Characterized with Series Equivalent Large- Signal Impedance Parameters Integrated ESD Protection 225 C Capable Plastic Package RoHS Compliant In Tape and Reel R1 Suffix = 500 Units per 24 mm, 13 inch Reel Document Number: MRFE6S9045N Rev 0, 10/ MHz, 10 W AVG, 28 V SINGLE N- CDMA LATERAL N- CHANNEL BROADBAND RF POWER MOSFET CASE , STYLE 1 TO PLASTIC Table 1 Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 05, +66 Vdc Gate-Source Voltage V GS - 05, +12 Vdc Maximum Operation Voltage V DD 32, +0 Vdc Storage Temperature Range T stg - 65 to +150 C Case Operating Temperature T C 150 C Operating Junction Temperature (1,2) T J 225 C Table 2 Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 81 C, 45 W CW Case Temperature 79 C, 10 W CW R θjc C/W 1 Continuous use at maximum temperature will affect MTTF 2 MTTF calculator available at Select Tools (Software & Tools)/Calculators to access MTTF calculators by product 3 Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers Go to Select Documentation/Application Notes - AN1955, Inc, 2007 All rights reserved 1

2 Table 3 ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 3A (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4 Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD C Table 5 Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current (V DS = 66 Vdc, V GS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 10 Vdc, I D = 200 μa) Gate Quiescent Voltage (V DD = 28 Vdc, I D = 350 madc, Measured in Functional Test) Drain-Source On-Voltage (V GS = 10 Vdc, I D = 10 Adc) Dynamic Characteristics Reverse Transfer Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) Output Capacitance (V DS = 28 Vdc ± 30 1 MHz, V GS = 0 Vdc) Input Capacitance (V DS = 28 Vdc, V GS = 0 Vdc ± 30 1 MHz) I DSS 10 μadc I DSS 1 μadc I GSS 10 μadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc C rss 102 pf C oss 27 pf C iss 81 pf Functional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 350 ma, P out = 10 W Avg, f = 880 MHz, Single-Carrier N-CDMA, MHz Channel Bandwidth Carrier ACPR measured in 30 khz Channel ±750 khz Offset PAR = % Probability on CCDF Power Gain G ps db Drain Efficiency η D % Adjacent Channel Power Ratio ACPR dbc Input Return Loss IRL db (continued) 2

3 Table 5 Electrical Characteristics (T C = 25 C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for MHz, 50 ohm system) V DD = 28 Vdc, I DQ = 350 ma, P out = 16 W Avg, f = MHz, GSM EDGE Signal Power Gain G ps 20 db Drain Efficiency η D 46 % Error Vector Magnitude EVM 15 % Spectral Regrowth at 400 khz Offset SR1-62 dbc Spectral Regrowth at 600 khz Offset SR2-78 dbc Typical CW Performances (In Freescale GSM Test Fixture Optimized for MHz, 50 ohm system) V DD = 28 Vdc, I DQ = 350 ma, P out = 45 W, f = MHz Power Gain G ps 20 db Drain Efficiency η D 68 % Input Return Loss IRL -12 db P 1 db Compression Point (f = 940 MHz) P1dB 52 W Typical Performances (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 350 ma, MHz Bandwidth Video 48 W PEP P out where IM3 = -30 dbc VBW (Tone Spacing from 100 khz to VBW) ΔIMD3 = VBW frequency khz <1 dbc (both sidebands) 10 Gain Flatness in 35 MHz P out = 10 W Avg G F 072 db Gain Variation over Temperature (-30 C to +85 C) Output Power Variation over Temperature (-30 C to +85 C) MHz ΔG 0011 db/ C ΔP1dB 0006 dbm/ C 3

4 RF INPUT V BIAS Z1 C1 R1 + C15 Z2 Z3 B1 R3 R2 C7 L1 Z4 Z5 Z6 Z7 C2 C3 Z8 C4 C5 Z9 C6 Z10 DUT C8 C9 L2 B2 V SUPPLY C10 C16 C17 C18 Z11 Z12 Z13 Z14 Z15 C11 C12 C14 C13 Z16 RF OUTPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z x 0065 Microstrip 0221 x 0065 Microstrip 0500 x 0100 Microstrip 0460 x 0270 Microstrip 0040 x 0270 Microstrip 0280 x 0270 x 0530 Taper 0087 x 0525 Microstrip 0435 x 0525 Microstrip 0057 x 0525 Microstrip Z x 0270 Microstrip Z x 0270 Microstrip Z x 0065 Microstrip Z x 0065 Microstrip Z x 0065 Microstrip Z x 0065 Microstrip Z x 0065 Microstrip PCB Taconic RF , ε r = 35 Figure 1 Test Circuit Schematic Table 6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead Fair Rite B2 Ferrite Bead Fair Rite C1, C7, C10, C14 47 pf Chip Capacitors ATC100B470JT500XT ATC C2, C4, C pf Variable Capacitors, Gigatrim 27291SL Johanson C3 15 pf Chip Capacitor ATC100B150JT500XT ATC C5, C6 12 pf Chip Capacitors ATC100B120JT500XT ATC C8, C9 13 pf Chip Capacitors ATC100B130JT500XT ATC C11 75 pf Chip Capacitor ATC100B7R5JT500XT ATC C pf Variable Capacitor, Gigatrim 27271SL Johanson C15, C16, C17 10 μf, 35 V Tantalum Capacitors T491D106K035AT Kemet C μf, 50 V Electrolytic Capacitor EMVY500ADA221MJA0G Nippon Chemi-con L1, L2 125 nh Inductors A04T-5 Coilcraft R1 1 kω, 1/4 W Chip Resistor CRCW FKEA Vishay R2 560 kω, 1/4 W Chip Resistor CRCW FKEA Vishay R3 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay 4

5 C15 R2 C18 V GG R1 R3 B1 B2 V DD C16 C17 C7 C10 L1 C5 C8 L2 C1 C2 C3 C4 C6 CUT OUT AREA C9 C11 C12 C13 C14 TO 270/272 Surface / Bolt down Figure 2 Test Circuit Component Layout 5

6 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) η D G ps V DD = 28 Vdc 20 P out = 10 W (Avg) I DQ = 350 ma N CDMA IS 95 Pilot Sync, Paging IRL Traffic Codes 8 Through ACPR ALT f, FREQUENCY (MHz) η D, DRAIN EFFICIENCY (%) Figure 3 Single-Carrier N-CDMA Broadband P out = 10 Watts Avg ACPR (dbc), ALT1 (dbc) IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) η D G ps V DD = 28 Vdc, P out = 20 W (Avg) 20 I DQ = 350 ma, N CDMA IS 95 Pilot 19 Sync, Paging, Traffic Codes 8 30 Through 13 ACPR η D, DRAIN EFFICIENCY (%) 16 ALT IRL f, FREQUENCY (MHz) Figure 4 Single-Carrier N-CDMA Broadband P out = 20 Watts Avg ACPR (dbc), ALT1 (dbc) 0 5 IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) ma I DQ = 525 ma 2625 ma 175 ma 4375 ma V DD = 28 Vdc, f1 = 880 MHz, f2 = 8801 MHz Two Tone Measurements 10 P out, OUTPUT POWER (WATTS) PEP 100 Figure 5 Two- Tone Power Gain versus Output Power 200 IMD, THIRD ORDER INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, f1 = 880 MHz, f2 = 8801 MHz Two Tone Measurements 2625 ma I DQ = 175 ma 4375 ma 525 ma 350 ma P out, OUTPUT POWER (WATTS) PEP Figure 6 Third Order Intermodulation Distortion versus Output Power 6

7 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, I DQ = 350 ma, f1 = 880 MHz f2 = 8801 MHz, Two Tone Measurements 3rd Order 5th Order 7th Order P out, OUTPUT POWER (WATTS) PEP Figure 7 Intermodulation Distortion Products versus Output Power IMD, INTERMODULATION DISTORTION (dbc) V DD = 28 Vdc, P out = 48 W (PEP), I DQ = 350 ma Two Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz IM3 U IM5 L IM3 L IM5 U IM7 L IM7 U TWO TONE SPACING (MHz) Figure 8 Intermodulation Distortion Products versus Tone Spacing P out, OUTPUT POWER (dbm) P6dB = 4921 dbm (8336 W) P3dB = 4840 dbm (6918 W) Ideal 51 P1dB = 4738 dbm 50 (547 W) 49 Actual 48 V DD = 28 Vdc, I DQ = 350 ma, Pulsed CW μsec(on), 1% Duty Cycle, f = 880 MHz P in, INPUT POWER (dbm) Figure 9 Pulsed CW Output Power versus Input Power η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) V DD = 28 Vdc, I DQ = 350 ma 30 C 25 C f = 880 MHz, N CDMA IS 95 Pilot 85 C Sync, Paging, Traffic Codes Through C C C C C ACPR 30 C G ps 50 T C = 30 C C η D C 5 ALT P out, OUTPUT POWER (WATTS) AVG Figure 10 Single- Carrier N- CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dbc) ALT1, CHANNEL POWER (dbc) 7

8 TYPICAL CHARACTERISTICS G ps, POWER GAIN (db) T C = 30 C 85 C 25 C η D 10 G ps 25 C V DD = 28 Vdc I DQ = 350 ma f = 880 MHz 30 C P out, OUTPUT POWER (WATTS) CW Figure 11 Power Gain and Drain Efficiency versus CW Output Power 85 C η D, DRAIN EFFICIENCY (%) G ps, POWER GAIN (db) V DD = 24 V 28 V P out, OUTPUT POWER (WATTS) CW I DQ = 350 ma f = 880 MHz 32 V Figure 12 Power Gain versus Output Power MTTF (HOURS) T J, JUNCTION TEMPERATURE ( C) 250 This above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 10 W Avg, and η D = 32% MTTF calculator available at Select Tools (Software & Tools)/Calculators to access MTTF calculators by product Figure 13 MTTF versus Junction Temperature 8

9 N-CDMA TEST SIGNAL PROBABILITY (%) IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) MHz Channel Bandwidth Carriers ACPR Measured in 30 khz ±750 khz Offset ALT1 Measured in 30 khz ±198 MHz Offset PAR = % Probability on CCDF PEAK TO AVERAGE (db) Figure 14 Single- Carrier CCDF N- CDMA 10 (db) MHz 20 Channel BW ALT1 in 30 khz +ALT1 in 30 khz Integrated BW Integrated BW ACPR in 30 khz +ACPR in 30 khz Integrated BW Integrated BW f, FREQUENCY (MHz) Figure 15 Single- Carrier N- CDMA Spectrum 9

10 Z o = 5 Ω f = 910 MHz Z source f = 850 MHz f = 850 MHz Z load f = 910 MHz V DD = 28 Vdc, I DQ = 350 ma, P out = 10 W Avg f MHz Z source Ω j j j j074 Z load Ω j j j j j j105 Z source = Test circuit impedance as measured from gate to ground Z load = Test circuit impedance as measured from drain to ground Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 16 Series Equivalent Source and Load Impedance 10

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14 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document REVISION HISTORY Revision Date Description 0 Oct 2007 Initial Release of Data Sheet 14

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