RF LDMOS Wideband Integrated Power Amplifiers

Transcription

1 Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC00 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 270 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W- CDMA. Typical CW Performance at 270 MHz, 28 Volts, I DQ = 2 ma Output Power 900 mw PEP Power Gain 3 db Efficiency 38% High Gain, High Efficiency and High Linearity Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large- Signal Impedance Parameters N Suffix Indicates Lead- Free Terminations In Tape and Reel. R4 Suffix = 00 Units per 2 mm, 7 inch Reel. MW4IC00MR4 Rev. 3, /2005 MW4IC00NR4 MW4IC00MR MHz, 900 mw, 28 V W-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE , STYLE PLD-.5 PLASTIC Table. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V DSS - 0.5, +65 Vdc Gate-Source Voltage V GS - 0.5, +5 Vdc Total Device T C = 25 C Derate above 25 C P D W W/ C Storage Temperature Range T stg - 65 to +50 C Operating Junction Temperature T J 50 C Table 2. Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance, Junction to 85 C R θjc 27.3 C/W Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model Machine Model Charge Device Model 0 (Minimum) M (Minimum) C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A3, IPC/JEDEC J-STD C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., All rights reserved.

2 Table 5. Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current (V DS = 65 Vdc, V GS = 0 Vdc) I DSS 0 µadc Zero Gate Voltage Drain Current (V DS = 28 Vdc, V GS = 0 Vdc) I DSS 0 µadc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc) On Characteristics Gate Threshold Voltage (V DS = 0 V, I D = 50 µa) Gate Quiescent Voltage (V DS = 28 V, I D = 0 ma) Drain-Source On-Voltage (V GS = 0 V, I D = 0.05 A) Forward Transconductance (V DS = 0 V, I D = 0. A) Dynamic Characteristics Output Capacitance (V DS = 28 Vdc ± 30 MHz, V GS = 0 Vdc) Reverse Transfer Capacitance (V DS = 28 Vdc ± 30 MHz, V GS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) Two-Tone Common Source Amplifier Power Gain (V DD = 28 Vdc, P out = 0.9 W PEP, I DQ = 2 ma, f = 270 MHz, Tone Spacing = 00 khz) Two-Tone Drain Efficiency (V DD = 28 Vdc, P out = 0.9 W PEP, I DQ = 2 ma, f = 270 MHz, Tone Spacing = 00 khz) Third Order Intermodulation Distortion (V DD = 28 Vdc, P out = 0.9 W PEP, I DQ = 2 ma, f = 270 MHz, Tone Spacing = 00 khz) Input Return Loss (V DD = 28 Vdc, P out = 0.9 W PEP, I DQ = 2 ma, f = 270 MHz, Tone Spacing = 00 khz) Output Power, db Compression Point, CW (V DD = 28 Vdc, I DQ = 2 ma, f = 270 MHz) Common-Source Amplifier Power Gain (V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 2 ma, f = 270 MHz) Drain Efficiency (V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 2 ma, f = 270 MHz) Input Return Loss (V DD = 28 Vdc, P out = 0.9 W CW, I DQ = 2 ma, f = 270 MHz) I GSS µadc V GS(th) Vdc V GS(Q) Vdc V DS(on) Vdc g fs 0.05 S C oss 45 pf C rss 0.62 pf G ps 3 db η D 29 % IMD -28 dbc IRL -8 db PdB 0.85 W G ps 2 3 db η D % IRL -0-6 db 2

3 V GG RF INPUT Z C9 C C3 C0 Z2 L C2 Z3 Z6 R Z4 R2 C4 Z5 DUT Z8 L2 Z7 Z9 Z0 Z Z2 Z3 C5 C7 C6 + C8 C C2 C3 V DD RF OUTPUT Z.33 x Microstrip Z x Microstrip Z x 0.75 Microstrip Z x 0.95 Microstrip Z x 0.45 Microstrip Z6, Z7.95 x Microstrip Z x 0.4 Microstrip Z x to 0.65 Taper Z x 0.65 Microstrip Z x Microstrip Z x Microstrip Z3.375 x Microstrip PCB Rogers RO4350, 0.020, ε r = 3.5 Figure. MW4IC00NR4(MR4) 900 MHz Test Circuit Schematic Table 6. MW4IC00NR4(MR4) 900 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C, C6 0. µf, 00 V Chip Capacitors C20C04K5RACTR Kemet C2, C3, C5, C7 43 pf, 500 V Chip Capacitors 00B430JP500X ATC C4 2 pf, 500 V Chip Capacitor 00B20JP500X ATC C8 22 µf, 35 V Tantalum Chip Capacitor T49X226K035AS Kemet C9 4.7 pf, 500 V Chip Capacitor 00B4R7CP500X ATC C0, C pf, 500 V Variable Capacitors 2727SL Johanson C2 2.7 pf, 500 V Chip Capacitor 00B2R7CP500X ATC C3 3.3 pf, 500 V Chip Capacitor 00B3R3CP500X ATC L 5.6 nh Chip Inductor 0805 Series AVX L2 0 nh Chip Inductor 008 Series ATC R 00 Chip Resistor CRCW20600F00 Dale R2 20 Chip Resistor CRCW20620R0F00 Dale 3

4 V GG V DD C C2 C6 C7 C8 C9 C0 C3 L R C4 R2 L2 C5 C2 C C3 MW4IC00MR4 900 MHz Rev 2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MW4IC00NR4(MR4) 900 MHz Test Circuit Component Layout 4

5 TYPICAL CHARACTERISTICS MHz η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) IRL η D IM3 G ps f, FREQUENCY (MHz) V DS = 28 Vdc P out = 0.9 W (PEP) I DQ = 4 ma Two Tone Measurement 00 khz Tone Spacing Figure 3. Two-Tone Performance versus Frequency IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) G ps PdB V DS = 28 Vdc 25 4 ma I DQ = 4 ma Two Tone Measurement f = 880 MHz 2 ma 00 khz Tone Spacing P out, OUTPUT POWER (WATTS) η D Figure 4. CW Performance versus Output Power η D, DRAIN EFFICIENCY (%) I DQ = 8 ma 0 ma 8 ma 6 ma V DS = 28 Vdc f = 880 MHz f2 = 880. MHz Figure 5. Intermodulation Distortion versus Output Power rd Order V DS = 28 Vdc I DQ = 4 ma f = 880 MHz f2 = 880. MHz MHz V DS = 28 Vdc 5th Order I DQ = 4 ma MHz f = 880 MHz, Two Tone Measurement 65 Tone f2 = f + Tone Spacing 7th Order 00 khz Tone Spacing Spacing = 00 khz Two Tone Measurement Figure 6. Intermodulation Distortion Products versus Output Power 25 Figure 7. Third Order Intermodulation Distortion versus Output Power 5

6 Z5 V GG RF INPUT + C Z C3 Z2 C2 Z3 Z4 R Z6 Z7 DUT Z8 Z9 Z2 C4 Z Z0 Z3 Z4 Z5 C5 + C6 V DD RF OUTPUT C7 Z Z2 Z3 Z4 Z5 Z6 Z7 Z8.08 x Microstrip x Microstrip x Microstrip.340 x Microstrip 0.92 x Microstrip 0.24 x Microstrip x 0.50 Microstrip x 0.50 Microstrip Z x Microstrip Z x Microstrip Z 0.79 x Microstrip Z2.49 x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Rogers RO4350, 0.020, ε r = 3.5 Figure 8. MW4IC00NR4(MR4) 990 MHz Test Circuit Schematic Table 7. MW4IC00NR4(MR4) 990 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C, C6 22 µf, 35 V Tantalum Capacitors T49X226K035AS Kemet C2, C4 0 pf, 500 V Chip Capacitors 00B00JCA500X ATC C3, C5 0 pf, 500 V Chip Capacitor 600S00JW ATC C pf, 500 V Variable Capacitor 2727SL Johanson R k Chip Resistor CRCW20602F00 Dale V GG V DD C C6 C2 C4 R C3 C5 C7 MW4IC00MR4 990 MHz Rev 3 6 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 9. MW4IC00NR4(MR4) 990 MHz Test Circuit Component Layout

7 TYPICAL CHARACTERISTICS MHz η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) IRL η D G ps IMD V DD = 28 Vdc, P out = 0.9 W (PEP), I DQ = 2 ma Two Tone Measurement, 00 khz Tone Spacing f, FREQUENCY (MHz) Figure 0. Two-Tone Performance versus Frequency IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) G ps η D PdB V DD = 28 Vdc I DQ = 2 ma f = 990 MHz P out, OUTPUT POWER (WATTS) Figure. CW Performance versus Output Power η D, DRAIN EFFICIENCY (%) ma I DQ = 20 ma 2 ma 0. 6 ma V DD = 28 Vdc f = 990 MHz, f2 = 990. MHz Two Tone Measurement 00 khz Tone Spacing Figure 2. Intermodulation Distortion versus Output Power rd Order 5th Order 7th Order OUTPUT POWER (WATTS) PEP Figure 3. Intermodulation Distortion Products versus Output Power THIRD ORDER INTERMODULATION (dbc) 0 MHz 50 MHz V DD = 28 Vdc I DQ = 2 ma V DD = 28 Vdc 55 f = 990 MHz I DQ = 2 ma, f = 990 MHz, f2 = 990. MHz f2 = f + Tone Spacing Two Tone Measurement, 00 khz Tone Spacing khz Two Tone Measurement Figure 4. Third Order Intermodulation Distortion versus Output Power 7

8 Z5 V GG RF INPUT + C Z C3 Z2 C2 Z3 Z4 R Z6 Z7 DUT Z8 Z9 Z2 C4 Z Z0 Z3 Z4 Z5 C5 + C6 V DD RF OUTPUT C7 Z Z2 Z3 Z4 Z5 Z6 Z7 Z8.267 x Microstrip x Microstrip x Microstrip.073 x Microstrip.36 x Microstrip x Microstrip 0.09 x 0.50 Microstrip 0.20 x 0.50 Microstrip Z x Microstrip Z x Microstrip Z x Microstrip Z2.055 x Microstrip Z x Microstrip Z x Microstrip Z x Microstrip PCB Rogers RO4350, 0.020, ε r = 3.5 Figure 5. MW4IC00NR4(MR4) 270 MHz Test Circuit Schematic Table 8. MW4IC00NR4(MR4) 270 MHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C, C6 22 µf, 35 V Tantalum Capacitors T49X226K035AS Kemet C2, C4 0 pf, 500 V Chip Capacitors 00B00JCA500X ATC C3, C5 0 pf, 500 V Chip Capacitor 600S00JW ATC C pf, 500 V Variable Capacitor 2727SL Johanson R k Chip Resistor CRCW20602F00 Dale V GG V DD C C6 C2 C4 R C5 C3 C7 MW4IC00MR4 270 MHz Rev 3 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 6. MW4IC00NR4(MR4) 270 MHz Test Circuit Component Layout 8

9 TYPICAL CHARACTERISTICS MHz η D, DRAIN EFFICIENCY (%), G ps, POWER GAIN (db) IRL η D IMD G ps f, FREQUENCY (MHz) V DD = 28 Vdc P out = 0.9 W (PEP) I DQ = 2 ma Two Tone Measurement, 00 khz Tone Spacing Figure 7. Two-Tone Performance versus Frequency IRL, INPUT RETURN LOSS (db) G ps, POWER GAIN (db) G ps η D PdB 60 V DD = 28 Vdc.8 I DQ = 2mA 0 45 f = 270 MHz 9.6 ma 2 ma Figure 8. CW Performance versus Output Power η D, DRAIN EFFICIENCY (%) V DD = 28 Vdc f = 270 MHz, f2 = 270. MHz Two Tone Measurement 00 khz Tone Spacing I DQ = 7.2 ma 20 ma 6 ma Figure 9. Intermodulation Distortion versus Output Power V DD = 28 Vdc, I DQ = 2 ma, f = 270 MHz, f2 = 270. MHz Two Tone Measurement, 00 khz Tone Spacing 3rd Order 50 5th Order MHz 0 MHz th Order khz Figure 20. Intermodulation Distortion Products versus Output Power THIRD ORDER INTERMODULATION (dbc) V DD = 28 Vdc I DQ = 2 ma f = 270 MHz f2 = f + Tone Spacing Two Tone Measurement Figure 2. Third Order Intermodulation Distortion versus Output Power 9

10 f = 860 MHz f = 900 MHz Z o = 50 Ω f =860 MHz f = 900 MHz V DD = 28 V, I DQ = 4 ma, P out = 0.9 W PEP f MHz Ω j j j j j6.567 Ω j j j j j j j j j j j j j = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Figure 22. Series Equivalent Source and Load Impedance 0

11 f = 920 MHz f = 2000 MHz f = 2000 MHz f = 280 MHz f = 200 MHz f = 280 MHz f = 920 MHz f = 200 MHz Z o = 50 Ω Z o = 50 Ω V DD = 28 V, I DQ = 2 ma, P out = 0.9 W PEP V DD = 28 V, I DQ = 2 ma, P out = 0.9 W PEP f MHz Ω Ω f MHz Ω Ω j j j j j j j j j j j j j j j j j j j j j j j j = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground j j j j j j j j j j j j29.4 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Input Matching Network Device Under Test Output Matching Network Figure 23. Series Equivalent Source and Load Impedance

12 NOTES 2

13 NOTES 3

14 NOTES 4

15 PACKAGE DIMENSIONS A F 3 B ZONE V ZONE W D G Q 4 N K H ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 4 3 ZONE X VIEW Y-Y S 2 2 R U C L 0.35 (0.89) X 45 5 P Y CASE ISSUE C PLD-.5 PLASTIC Y STYLE : PIN. DRAIN 2. GATE 3. SOURCE 4. SOURCE 0 DRAFT E NOTES:. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y4.5M, CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X

16 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) support@freescale.com Japan: Japan Ltd. Headquarters ARCO Tower 5F -8-, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 5405 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. Document Number: MW4IC00MR4 Rev. 3, /2005 6