ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 1.0 GHz, 30 W, 28 V LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CASE 360B 05, STYLE 1 NI 360 MRF182R1 MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DSS 65 Vdc Gate Source Voltage V GS ±20 Vdc Total Device T C = 70 C Derate above 70 C P D Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C THERMAL CHARACTERISTICS W W/ C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.75 C/W CASE 360C 05, STYLE 1 NI 360S MRF182SR1 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) OFF CHARACTERISTICS Drain Source Breakdown Voltage (V GS = 0 Vdc, I D = 1.0 Adc) Characteristic Symbol Min Typ Max Unit V (BR)DSS 65 Vdc Zero Gate Voltage Drain Current (V DS = 28 Vdc, V GS = 0 Vdc) Gate Source Leakage Current (V GS = 20 Vdc, V DS = 0 Vdc) I DSS 1 µadc I GSS 1 µadc NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 11 Motorola, Inc

2 ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Characteristic Symbol Min Typ Max Unit V GS(th) Vdc Gate Quiescent Voltage (V DS = 28 Vdc, I D = 50 ma) Drain Source On Voltage (V GS = 10 Vdc, I D = 3 A) Forward Transconductance (V DS = 10 Vdc, I D = 3 A) DYNAMIC CHARACTERISTICS Input Capacitance (V DS = 28 V, V GS = 0, f = 1 MHz) Output Capacitance (V DS = 28 V, V GS = 0, f = 1 MHz) Reverse Transfer Capacitance (V DS = 28 V, V GS = 0, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common Source Power Gain (V DD = 28 Vdc, P out = 30 W, I DQ = 50 ma, f = 945 MHz) Drain Efficiency (V DD = 28 Vdc, P out = 30 W, I DQ = 50 ma, f = 945 MHz) V GS(Q) Vdc V DS(on) Vdc g fs S C iss 56 pf C oss 28 pf C rss 2.5 pf G ps db h % Load Mismatch (V DD = 28 Vdc, P out = 30 W, I DQ = 50 ma, f = 945 MHz, Load VSWR 5:1 at All Phase Angles) Series Equivalent Input Impedance (V DD = 28 Vdc, P out = 30 W, I DQ = 50 ma, f = 960 MHz) Series Equivalent Output Impedance (V DD = 28 Vdc, P out = 30 W, I DQ = 50 ma, f = 960 MHz) Ψ No Degradation in Output Power Z in j1.6 ohms Z out 2.15 j1.7 ohms 2

3 B1 Short RF Bead Fair Rite C1 18 pf Chip Capacitor C2, C3, C6, C9 43 pf Chip Capacitor C4 100 pf Chip Capacitor C5, C12 10 µf, 50 Vdc Electrolytic Capacitor C7, C pf Chip Capacitor C8, C µf, 50 Vdc Chip Capacitor C µf, 50 Vdc Electrolytic Capacitor C pf Variable Capacitor L1 5 Turns, 20 AWG, IDIA R1 10 kω, 1/4 W Resistor R2 13 kω, 1/4 W Resistor R3 1.0 kω, 1/4 W Chip Resistor R4 4 x 39 Ω, 1/8 W Chip Resistor TL1 TL4 Microstrip Line See Photomaster Ckt Board 1/32 Glass Teflon, ε r = 2.55 ARLON GX Figure 1. MRF182 Schematic 3

4 TYPICAL CHARACTERISTICS Figure 2. Output Power versus Input Power at 1 GHz Figure 3. Power Gain versus Output Power at 1 GHz η Figure 4. Drain Efficiency versus Output Power at 1 GHz Figure 5. Output Power versus Supply Voltage Figure 6. Output Power versus Input Power 4 Figure 7. Capacitance versus Drain Source Voltage

5 Table 1. Typical Common Source S Parameters (V DS = 13.5 V) I D = 1.0 A S 11 S 21 S 12 S f 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ Á ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ Á ÁÁÁ Á ÁÁÁ ÁÁÁ ÁÁÁ 5

6 Table 2. Typical Common Emitter S Parameters (V DS = 28 V) I D = 1.0 A S 11 S 21 S 12 S f 22 MHz S 11 φ S 21 φ S 12 φ S 22 φ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ

7 PACKAGE DIMENSIONS B G 2X Q B (FLANGE) E A 2X D N (LID) M (INSULATOR) A T C 2X K H R (LID) CASE 360B 05 ISSUE F NI 360 MRF182R1 S (INSULATOR) F B B (FLANGE) PIN 3 E A 2X D A (FLANGE) M (INSULATOR) N (LID) T C 2X K H R (LID) S (INSULATOR) CASE 360C 05 ISSUE D NI 360S MRF182SR1 F 7

8 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola, Inc How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado or JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, , Minami Azabu. Minato ku, Tokyo Japan ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong Technical Information Center: HOME PAGE: 8 MRF182/D

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800