LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER

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1 nc. Order this document by MRFIC856/D The MRFIC856 is designed for dual band subscriber equipment applications at in the cellular (800 MHz) and PCS (900 MHz) bands. The device incorporates two phemt GaAs amplifier chains in one package, allowing the most flexibility and highest performance while reducing board space. Target applications include dual band/dual mode handsets for TDMA/AMPS and PCS TDMA cellular phones. Designed to Operate in Frequency Ranges of: 824 to 849 MHz TDMA/AMPS 850 to 9 MHz PCS TDMA Operation dbm Output Power PCS TDMA 3 dbm Output Power TDMA Cellular 3 dbm Output Power AMPS V SS V GA RF ina RF inb V GB Simplified Block Diagram Bias V da V DB V d2a V g3a V D2B V G3B This device contains 8 active transistors. RFoA/V D3A RFoB/V D3B DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER Device SEMICONDUCTOR TECHNICAL DATA PLASTIC PACKAGE CASE 948M (TSSOP EP, Tape & Reel Only) V G3A V DA V SS RF ina V GA V GB RF inb Gnd (Scale 2:) PIN CONNECTIONS V D2A RFoA/V D3A RFoA/V D3A RFoA/V D3A Gnd RFoB/V D3B RFoB/V D3B RFoB/V D3B V DB 9 2 RFoB/V D3B V G3B V D2B (Top View) ORDERING INFORMATION Operating Temp Range Package MRFIC856R2 TC = to TSSOP EP This document contains information on a new product. Specifications and information herein Motorola, Inc. 00 Rev are subject to change without notice. SOLUTIONS RF AND IF DEVICE DATA Go to:

2 MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage VD 4.8 Vdc RF Input Power Pin dbm Gate Voltage Vg 6 to 0.3 Vdc Storage Temperature Range Tstg 65 to 0 C Operating Case Temperature TC to 85 C Thermal Resistance, Junction to Case R JC C/W NOTES:. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 0 V and Machine Model (MM) <50 V. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Limit Unit Frequency Range TDMA/AMPS frf 824 to 849 MHz Frequency Range PCS TDMA frf 850 to 9 MHz Supply Voltage Range VD,2,3A, VD,2,3B 3.0 to 4.8 Vdc Negative Supply Voltage VG 4.5 to 2.5 Vdc ELECTRICAL CHARACTERISTICS (VD,2,3A =,, unless otherwise noted) Characteristic Symbol Min Typ Max Unit TDMA CELLULAR PERFORMANCE (Pout = 3 dbm, f = 840 MHz) Quiescent Supply Current IDQ 0 ma Negative Supply Current ISS 3.0 ma Efficiency PAE % Gain GP 29 Adj Channel Power (± khz) ACP 29 dbc Alt Channel Power (±60 khz) ALT 48 dbc Rx Band Noise ( khz BW) 92 dbm Harmonic Output Power dbc 2fo 34 3fo Spurious Output, : VSWR, all angles on output 60 dbc AMPS PERFORMANCE (Pout = 3 dbm, f = 840 MHz) Quiescent Supply Current IDQ 0 ma Negative Supply Current ISS 3.0 ma Efficiency (Pout = 3 dbm) PAE 48 % Gain GP Harmonic Output Power dbc 2fo 34 3fo Rx Band Noise ( khz BW) 92 dbm Spurious Output, : VSWR, all angles on output 60 dbc PCS TDMA PERFORMANCE (Pout = dbm, f =.88 GHz) Quiescent Supply Current - 0 ma Negative Supply Current 3.0 ma Efficiency 35 % Gain 28 2 SOLUTIONS RF AND IF DEVICE DATA Go to:

3 ELECTRICAL CHARACTERISTICS (continued) (VD,2,3A =,, unless otherwise noted) Characteristic Symbol Min Typ Max Unit PCS TDMA PERFORMANCE (continued) (Pout = dbm, f =.88 GHz) Adj Channel Power (± khz) 29 dbc Alt Channel Power (±60 khz) 48 dbc Rx Band Noise ( khz BW) 94 dbm Harmonic Output Power dbc 2fo 3fo Spurious Output, : VSWR, all angles on output 60 dbc RF InA RF InB C3 C2 C29 L2 V G2 V DB V DA V SS C C4 C C6 C8 V G3A T2 T6 T7 C3 C,C2,C5,C2,C7,0 pf C nf C3,C4,C6,C3,C2 00 pf C7,C8 µf C9,C22,C24 µf C 2 pf C 5. pf C4 22 pf C,C.3 pf R R2 V G3B C Bias Figure. Applications Circuit C6 C25 C27 C29 L,L2,L3 6.2 pf 4.7 pf pf 3.9 pf nh R 50 Ω R2 0 Ω NOTE: C29 added for 2nd harm trap C7 C6 C2 C22 T3 V D2A V D2B T8 L L3 V D3A T4 T5 T T9 T2 T3 T4 T5 T6 T7 T8 T9 T T V D3B C9 C5 C25 C7 C24 T C27 C2 C C C RF OutB 50 Ω, Microstrip, L = 28 mils 50 Ω, Microstrip, L = 50 mils 50 Ω, Microstrip, L = 60 mils 90 Ω, Microstrip, L = 88 mils 90 Ω, Microstrip, L = 600 mils 63 Ω, Microstrip, L = 33 mils 50 Ω, Microstrip, L = 33 mils 50 Ω, Microstrip, L = mils 50 Ω, Microstrip, L = 3 mils 50 Ω, Microstrip, L = 45 mils RF OutA SOLUTIONS RF AND IF DEVICE DATA Go to: 3

4 Figure V Applications Circuit V DB V DA V SS = 3.7 V C RF InA V G/2 RF InB C3 C2 C29 L2 C4 C C6 C8 V G3A T2 T6 T7 C,C2,C5,C2,C7,0 pf C nf C3,C4,C6,C3,C2 00 pf C7,C8 µf C9,C22,C24 µf C 2 pf C 5. pf C4 22 pf C,C.3 pf C3 R R2 V G3B C Bias C6 C25 C27 C29 L,L2,L3 R R2 6.8 pf 4.3 pf pf 3.9 pf nh 50 Ω 0 Ω V D2A V D3A C7 C9 C6 C5 T3 L T4 T5 C T C C2 C 4 T9 T C27 RF OutB 3 C25 2 L3 T8 C7 C2 C24 C22 V D3B V D2B T2 50 Ω, Microstrip, L = 28 mils T3 50 Ω, Microstrip, L = 50 mils T4 50 Ω, Microstrip, L = 60 mils T5 90 Ω, Microstrip, L = 88 mils T6 90 Ω, Microstrip, L = 600 mils T7 63 Ω, Microstrip, L = 33 mils T8 50 Ω, Microstrip, L = 33 mils T9 50 Ω, Microstrip, L = mils T 50 Ω, Microstrip, L = 3 mils T 50 Ω, Microstrip, L = 45 mils RF OutA 4 SOLUTIONS RF AND IF DEVICE DATA Go to:

5 GAIN (db) Pout, OUTPUT POWER (dbm) ACPR, ADJACENT CHANNEL khz OFFSET (dbc) TA = C Figure 3. Gain versus Frequency f, FREQUENCY (MHz) Figure 5. Output Power versus Input Power TA = C 0 Pin, INPUT POWER (dbm) Figure 7. Adjacent Channel Power TA = C,, & TDMA PERFORMANCE GAIN (db) Pout, OUTPUT POWER (dbm) ACPR, ADJACENT CHANNEL khz OFFSET (dbc) Figure 4. Gain versus Frequency VDD = 4.8 V 3.0 V f, FREQUENCY (MHz) Figure 6. Output Power versus Input Power 3.0 V VDD = 4.8 V 0 Pin, INPUT POWER (dbm) Figure 8. Adjacent Channel Power VDD = 3.0 V 4.8 V SOLUTIONS RF AND IF DEVICE DATA Go to: 5

6 TDMA PERFORMANCE ALTERNATE CHANNEL 60 khz OFFSET (dbc) GAIN (db) Pout, OUTPUT POWER (dbm) Figure 9. Alternate Channel Power TA = C f, FREQUENCY (MHz) TA = C Figure. Gain versus Frequency Pin, INPUT POWER (dbm) C Figure 3. Output Power versus Input Power 0 ALTERNATE CHANNEL 60 khz OFFSET (dbc) Pout, OUTPUT POWER (dbm) GAIN (db) Figure. Alternate Channel Power VDD = 3.0 V VDD = 4.8 V 3.0 V f, FREQUENCY (MHz) VDD = 4.8 V 3.0 V Figure 2. Gain versus Frequency Figure 4. Output Power versus Input Power Pin, INPUT POWER (dbm) 4.8 V 0 6 SOLUTIONS RF AND IF DEVICE DATA Go to:

7 ACPR, ADJACENT CHANNEL khz OFFSET (dbc) ALTERNATE CHANNEL 60 khz OFFSET (dbc) Figure. Adjacent Channel Power ACPR, ADJACENT CHANNEL khz OFFSET (dbc) & 25 Figure 7. Alternate Channel Power TA = C TDMA PERFORMANCE C ALTERNATE CHANNEL 60 khz OFFSET (dbc) Figure 6. Adjacent Channel Power VDD = 3.0 V 4.8 V Figure 8. Alternate Channel Power VDD = 3.0 V V SOLUTIONS RF AND IF DEVICE DATA Go to: 7

8 E 0. C B A EXPOSED THERMAL PAD (BOTTOM SURFACE) PIN IDENTIFICATION 0. C B A 0. C GAUGE PLANE c 2X A E/2 A e Freescale Semiconductor, MRFIC856 Inc. N L N P D DETAIL E R OUTLINE DIMENSIONS PLASTIC PACKAGE CASE 948M 0 (TSSOP EP) ISSUE O P X A 0.25 b REF 0. M C B S A S E B c c DETAIL E b b ÇÇÇÇ ÉÉ ÇÇÇÇ ÉÉ SECTION N N H PARTING LINE NOTES: DIMENSIONS ARE IN MILLIMETERS. 2 INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y4.5M, DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0. PER SIDE. 4 DIMENSION E DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5 DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6 TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7 DIMENSIONS D AND E ARE TO BE DETERMINED AT DATUM PLANE H. MILLIMETERS DIM MIN MAX A. A b b c c D E 6.40 BSC E e 0.65 BSC L P 4.80 P 3.00 R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado or JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3, Minami Azabu, Minato ku, Tokyo, Japan Customer Focus Center: ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. HOME PAGE: MRFIC856/D SOLUTIONS RF AND IF DEVICE DATA Go to:

RF LDMOS Wideband Integrated Power Amplifier MHVIC2115R2. Freescale Semiconductor, I. The Wideband IC Line SEMICONDUCTOR TECHNICAL DATA

MOTOROLA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifier The wideband integrated circuit is designed for base station applications.