ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data
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1 Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. Third Order Intercept: 47 dbm Typ Power Gain:.5 db Typ (@ ) Input and Output VSWR 1.5:1 Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications For Use in TDMA, CDMA, QPSK or Analog Systems Replaced MHL9236M. There are no form, fit or function changes with these part replacements. N Suffix Indicates Lead- Free Terminations Document Number: Rev. 7, 8/ MHz 2.5 W,.5 db RF LINEAR LDMOS AMPLIFIER CASE 1AP-02, STYLE 2 Table 1. Absolute Maximum Ratings ( unless otherwise noted) Rating Symbol Value Unit DC Supply Voltage V DD Vdc RF Input Power P in +10 dbm Storage Temperature Range T stg - to +100 C Operating Case Temperature Range T C - 20 to +100 C Table 2. Electrical Characteristics (, ; Ω System) Characteristic Symbol Min Typ Max Unit Supply Current I DD ma Power Gain () db Gain Flatness (f = MHz) db Power 1 db Compression () 34 dbm Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) dbm Noise Figure (f = MHz) NF db NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed., Inc., All rights reserved. 1
2 I TYPICAL CHARACTERISTICS POWER GAIN/RETURN LOSS (db), POWER GAIN (db) ) PHASE( ORL Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 3. Power Gain, I DD versus Temperature IRL f, FREQUENCY (MHz) f, FREQUENCY (MHz) PHASE I DD GROUP DELAY DD, (ma) GROUP DELAY (ns), (dbm) (dbm), GAIN FLATNESS (db) Figure 2., versus Frequency Figure 4., versus Temperature PHASE LINEARITY f = MHz (dbm) PHASE LINEARITY ( ) Figure 5. Phase (1), Group Delay (1) versus Temperature 1. In Production Test Fixture Figure 6. Gain Flatness, Phase Linearity versus Temperature 2
3 I TYPICAL CHARACTERISTICS , POWER GAIN (db) I DD DD (ma) (dbm) (dbm) PHASE ( ) Figure 7. Power Gain, I DD versus Voltage GROUP DELAY Figure 9. Phase (1), Group Delay (1) versus Voltage 1. In Production Test Fixture PHASE GROUP DELAY (ns) PHASE LINEARITY ( ) Figure 8., versus Voltage Figure 10. Phase Linearity, Gain Flatness versus Voltage PHASE LINEARITY f = MHz 32, GAIN FLATNESS (db)
4 PACKAGE DIMENSIONS (0.51) M T A M A G B A S 2X Q () M T S M A M R J S NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. K 4X D (0.51) M T B M 4X P (0.51) M T H L N W F E CASE 1AP-02 ISSUE E C T SEATING PLANE INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F BSC 2.18 BSC G 1.6 BSC BSC H BSC BSC J K L BSC BSC N BSC 9.91 BSC P Q R S W BSC 2.29 BSC STYLE 2: PIN 1. RF OUTPUT 2. VDD2 3. VDD1 4. RF INPUT CASE: GROUND 4
5 How to Reach Us: Home Page: USA/Europe or Locations Not Listed: Technical Information Center, CH N. Alma School Road Chandler, Arizona or Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen Muenchen, Germany (English) (English) (German) (French) Japan: Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo Japan or support.japan@freescale.com Asia/Pacific: Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong support.asia@freescale.com For Literature Requests Only: Literature Distribution Center P.O. Box 55 Denver, Colorado or Fax: LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. reserves the right to make changes without further notice to any products herein. makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customer s technical experts. does not convey any license under its patent rights nor the rights of others. products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death may occur. Should Buyer purchase or use products for any such unintended or unauthorized application, Buyer shall indemnify and hold and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale and the Freescale logo are trademarks of, Inc. All other product or service names are the property of their respective owners., Inc All rights reserved. RF Document Device Number: Data Freescale Rev. 7, 8/2006 Semiconductor 5
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Technical Data RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz Suitable for WiMAX, WiBro
V GS(th) Vdc. V GS(Q) 2.6 Vdc. V GG(Q) Vdc. V DS(on) Vdc
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from
ARCHIVE INFORMATION. RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5. Freescale Semiconductor
Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies
PD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C
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3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
Distributed by: www.jameco.com 1--31-4242 The content and copyrights of the attached material are the property of its owner. Order this document by M3/D The M3 is an integrated circuit featuring wide range
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Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
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Order this document by MC9/D The MC9 is an integrated circuit featuring wide range AGC for use in RF/IF amplifiers and audio amplifiers over the temperature range, to + C. High Power Gain: db Typ at MHz
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain