PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit

Size: px
Start display at page:

Download "PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (1) at 70 C Case RθJC 7.0 C/W. Characteristic Symbol Min Typ Max Unit"

Transcription

1 SEICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for 9 Hz base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Specified Volts, 9 Hz Characteristics Output Power =. Watts inimum Gain =. db Class AB IQ = ma Circuit board photomaster available upon request by contacting RF Tactical arketing in Phoenix, AZ.. W, 9 Hz UHF POWER TRANSISTOR NPN SILICON AXIU RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCER Vdc Collector Base Voltage VCBO Vdc Emitter Base Voltage VEBO. Vdc Collector Current Continuous IC. Adc Total Device TC = C Derate above C PD. Watts W/ C Storage Temperature Range Tstg to + C Operating Junction Temperature TJ C CASE 9, STYLE THERAL CHARACTERISTICS Characteristic Symbol ax Unit Thermal Resistance, Junction to Case () at C Case RθJC. C/W ELECTRICAL CHARACTERISTICS (TC = C unless otherwise noted.) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC = ma, RBE = Ω) Characteristic Symbol in Typ ax Unit V(BR)CER Vdc Emitter Base Breakdown Voltage (IC =. madc) Collector Base Breakdown Voltage (IE = madc) Collector Emitter Leakage (VCE = V, RBE = Ω) ON CHARACTERISTICS DC Current Gain (IC =. Adc, VCE = Vdc) V(BR)EBO. Vdc V(BR)CBO Vdc ICER. ma hfe NOTE:. Thermal resistance is determined under specified RF operating condition. (continued) REV OTOROLA otorola, Inc. 99 RF DEVICE DATA

2 ELECTRICAL CHARACTERISTICS continued (TC = C unless otherwise noted.) DYNAIC CHARACTERISTICS Output Capacitance (VCB = V, IE =, f =. Hz) Characteristic Symbol in Typ ax Unit Cob.. pf FUNCTIONAL TESTS Common Emitter Amplifier Power Gain (VCC = V, Pout =. W, ICQ = ma, f = 9 Hz) Gp. 9. db Load ismatch (VCC = V, Pout =. W, ICQ = ma, Load VSWR = :, at all phase angles) ψ No Degradation in Output Power Before and After Test Collector Efficiency (VCC = V, Pout =. W, f = 9 Hz) ηc % Power Saturation Pin =. W Psat. W T T C + R + C9 + VCC C D C R D* C C C R RF INPUT Ω C D.U.T. C RF OUTPUT Ω *Contact with RF Transistor C Capacitor Chip pf % C, C, C, C Capacitor Chip pf % C, C Capacitor Chip nf % C, C9 Capacitor Chip.,. nf V D, D SD Diode R Chip Resistor. Ω % R Chip Resistor Ω % R Chip Resistor Ω % R to be adjusted for IQ = ma T SD Transistor BCX or Similar T Voltage Regulator Board aterial. mm, Epoxy Glass, Cu Clad, Sides, µm Thick Figure. 9 Hz Test Circuit OTOROLA RF DEVICE DATA

3 VCC = V V f = 9 Hz IQ = ma Pin =. W. W VCC = V IQ = ma Pin, INPUT POWER (WATTS) f, FREQUENCY (Hz) Figure. Output Power versus Input Power Figure. Output Power versus Frequency Pin =. W. W f = 9 Hz IQ = ma Gp, POWER GAIN (db) Gp ηc VCC = V IQ = ma η c, COLLECTOR EFFICIENCY (%) VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (Hz) Figure. Output Power versus Supply Voltage Figure. Typical Broadband Circuit Performance ZOL* f = 9 Hz 9 ZIN f = Hz Pout =. W VCE = V Ω f Hz 9 9 ZIN OHS. + j 9. + j..9 + j. ZOL* OHS. j. j. j. ZOL* = Conjugate of the optimum load ZOL* = impedance. Into which the device ZOL* = operates at a given output power, ZOL* = voltage, and frequency. Figure. Series Equivalent Input/Output Impedances OTOROLA RF DEVICE DATA

4 T C9 C R C C Ä T R D R D C ÄC OUTPUT C C INPUT Figure. Test Circuit Component Locations PACKAGE DIENSIONS IDENTIFICATION NOTCH -A- Q PL L. (.) T A N NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y., 9.. CONTROLLING DIENSION: INCH. H J F B D PL K E. (.) T A N. (.) T A N C -N- -T- SEATING PLANE DI A B C D E F H J K L N Q IN STYLE : PIN. EITTER (COON). BASE (INPUT). EITTER (COON). EITTER (COON). COLLECTOR (OUTPUT). EITTER (COON) INCHES AX ILLIETER IN AX BSC. BSC CASE 9 ISSUE otorola reserves the right to make changes without further notice to any products herein. otorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does otorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. otorola does not convey any license under its patent rights nor the rights of others. otorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the otorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use otorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold otorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that otorola was negligent regarding the design or manufacture of the part. otorola and are registered trademarks of otorola, Inc. otorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: otorola Literature Distribution; P.O. Box 9; Phoenix, Arizona. EUROPE: otorola Ltd.; European Literature Centre; Tanners Drive, Blakelands, ilton Keynes, K BP, England. JAPAN: Nippon otorola Ltd.; --, Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. ASIA PACIFIC: otorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. OTOROLA RF DEVICE /D DATA

5 This datasheet has been download from: Datasheets for electronics components.

PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.

PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output

More information

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.

More information

P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.

P D Storage Temperature Range T stg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 24 Volt UHF large signal, common emitter, class AB linear amplifier applications in industrial and commercial FM/AM equipment

More information

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 5 MHz. Guaranteed

More information

Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db

Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D... for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hfe = 6000 (Typ) @ IC = 3.0 Adc Monolithic

More information

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to

More information

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF26/D The RF Sub Micron Bipolar Line The MRF26 and MRF26S are designed for broadband commercial and industrial applications at frequencies from 1 to

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc

More information

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector

More information

PD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C

PD Storage Temperature Range Tstg 65 to +200 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for

More information

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787 ... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth

More information

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE23/D The MJE23 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery

More information

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and

More information

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector

More information

Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit

Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN955/D Prepared by: Ken Dufour Motorola Power Products Division INTRODUCTION This application note describes a two stage, 30 watt VHF amplifier

More information

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector

More information

NPN Silicon ON Semiconductor Preferred Device

NPN Silicon ON Semiconductor Preferred Device NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector

More information

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)

More information

MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS

MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS ... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage

More information

NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS

NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0

More information

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub Micron Bipolar Line The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by N/D The N, N and N7 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line Designed for wideband large signal amplifier and oscillator applications up to MHz range, in single ended configuration. Guaranteed

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6547/D The 2N6547 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)

More information

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)

More information

100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C

100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C ... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =

More information

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)

1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2) ...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192

2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage

More information

1.0. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 C/W. Characteristic Symbol Min Typ Max Unit.

1.0. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D The RF Line... designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt,

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.8 C/W

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 0.8 C/W SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173/D The RF MOSFET Line N Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 2 MHz frequency range.

More information

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)

More information

NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 madc THERMAL

More information

EB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER

EB W (PEP) AMATEUR RADIO LINEAR AMPLIFIER MOTOROLA Order this document by EB63/D SEMICONDUCTOR ENGINEERING BULLETIN EB63 140 W (PEP) AMATEUR RADIO LINEAR AMPLIFIER 2 30 MHz The popularity of 2 30 MHz, SSB, Solid State, linear amplifiers is increasing

More information

LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA

LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered

More information

For Isolated Package Applications

For Isolated Package Applications SEMONDUCTOR TECHNAL DATA Order this document by BUT11AF/D For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications.

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source

More information

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800

More information

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC

More information

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic

More information

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF Order this document by MC6C/D The MC6C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for use

More information

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142 ... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)

More information

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias

More information

NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

NPN Silicon.  MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous

More information

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters,

More information

P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.

P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit. NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector

More information

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by /D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS)

More information

Designer s Data Sheet Insulated Gate Bipolar Transistor

Designer s Data Sheet Insulated Gate Bipolar Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor

More information

PNP Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION

PNP Silicon.  MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 40 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8020/D The MOC8020 and MOC802 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington

More information

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS Order this document by A26LS32/D otorola s Quad EIA422/3 Receiver features four independent receiver chains which comply with EIA Standards for the Electrical Characteristics of Balanced/Unbalanced Voltage

More information

NSTB1002DXV5T1G, NSTB1002DXV5T5G

NSTB1002DXV5T1G, NSTB1002DXV5T5G NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L. DUAL -OF-4 DECODER/ DEMULTIPLEXER The SN54/ LS55 and SN54/ LS56 are high speed Dual -of-4 Decoder/Demultiplexers. These devices have two decoders with common 2-bit Address inputs and separate gated Enable

More information

EMC5DXV5T1, EMC5DXV5T5

EMC5DXV5T1, EMC5DXV5T5 EMC5DXV5T, EMC5DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor)

More information

Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3

Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions MRF9085SR3/MRF9085LSR3 SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9085/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

More information

MJE18008 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE18008 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state of the art die designed for use in 220 V line operated Switchmode Power supplies

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.

More information

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LSTTL/ MSI SN54/ LS353 is a Dual 4-Input Multiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs.

More information

Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ±20 Vdc Total Device TC = 25 C Derate above 25 C

Rating Symbol Value Unit Drain Source Voltage VDSS 65 Vdc Gate Source Voltage VGS ±20 Vdc Total Device TC = 25 C Derate above 25 C SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies

More information

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Temperature Derating Curve

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Temperature Derating Curve ... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc

More information

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc

More information

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor

More information

Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions

Watts W/ C Storage Temperature Range T stg 65 to +150 C Operating Junction Temperature T J 200 C. Test Conditions SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21125/D The RF Sub Micron MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for W CDMA base station applications with frequencies from

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion

More information

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS ... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)

More information

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage ...designed for general purpose and low speed switching applications. High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 Collector Emitter Sustaining Voltage at 100 madc V CEO(sus) = 80 Vdc (min.) BDX33B,

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features.  MAXIMUM RATINGS THERMAL CHARACTERISTICS MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector

More information

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR Order this document by /D The is an adjustable threeterminal negative voltage regulator capable of supplying in excess of 5 ma over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev. Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information