25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS
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1 ... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max) at Rated Voltage Excellent DC Current Gain h FE = 20 (min) at I C = 10 Adc High Current Gain Bandwidth Product f τ = 4.0 MHz (min) at I C = 1.0 Adc Î MAXIMUM RATINGS (1) 2N5883 Î 2N5884 Rating Symbol 2N5885 2N5886 Unit Î Collector Emitter Voltage V CEO Vdc Î Collector Base Voltage V CB Vdc Î Emitter Base Voltage V EB 5.0 Vdc Collector Current Continuous I C Î 25 Î Peak Î 50 Adc Î Base Current I B ÎÎ 7.5 Adc Î Total Device T C = 25C P D ÎÎ 200 Watts Derate above 25C 1.15 W/C Î Operating and Storage Junction T Î Temperature Range J, T stg 65 to +200 Î C Î THERMAL CHARACTERISTICS Î Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Case θ JC C/W (1) Indicates JEDEC registered data. Units and conditions differ on some parameters and re registration reflecting these changes has been requested. All above values most or exceed present JEDEC registered data. *ON Semiconductor Preferred Device 25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS CASE 1 07 TO 204AA (TO 3) Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 9 1 Publication Order Number: 2N5883/D
2 Î *ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted) Characteristic Symbol Min Î Max Unit Collector Emitter Sustaining Voltage (2) 2N5883, 2N5885 V CEO(sus) 60 Î Vdc (I C = 200 madc, I B = 0) 2N5884, 2N Collector Cutoff Current (V CE = 30 Vdc, I B = 0) 2N5883, 2N5885 I CEO Collector Cutoff Current (V CE = 40 Vdc, I B = 0) 2N5984, 2N5886ÎÎ 2.0 madc Î 2.0 Collector Cutoff Current I CEX madc (V CE = 60 Vdc, V BE(off) = 1.5 Vdc) 2N5883, 2N (V CE = 80 Vdc, V BE(off) = 1.5 Vdc) 2N5884, 2N5886ÎÎ 1.0 Î (V CE = 60 Vdc, V BE(off) = 1.5 Vdc, T C = 150C) 2N5883, 2N (V CE = 80 Vdc, V BE(off) = 1.5 Vdc, T C = 150C) 2N5884, 2N Î Collector Cutoff Current I (V CB = 60 Vdc, I E = 0) 2N5883, 2N5885 CBO madc Î (V CB = 80 Vdc, I E = 0) 2N5884, 2N5886ÎÎ 1.0 Î 1.0 Emitter Cutoff Current (V EB = 5.0 Vdc, I C = 0) I EBO Î 1.0 madc ON CHARACTERISTICS Î DC Current Gain (2) (I C = 3.0 Adc, V CE = 4.0 Vdc) h DC Current Gain (2) (I C = 10 Adc, V CE = 4.0 Vdc) FE Î 100 Î DC Current Gain (2) (I C = 25 Adc, V CE = 4.0 Vdc) ÎÎ 4.0 Î Collector Emitter Saturation Voltage (2) (I C = 15 Adc, I B = 1.5 Adc) V Collector Emitter Saturation Voltage (2) (I C = 25 Adc, I B CE(sat) Î 1.0 Vdc = 6.25 Adc) 4.0 Base Emitter Saturation Voltage (2) (I C = 25 Adc, I B = 6.25 Adc) ÎÎ Î 2.5 Vdc V BE(sat) V BE(on) Base Emitter On Voltage (2) (I C = 10 Adc, V CE = 4.0 Vdc) ÎÎ Î 1.5 Vdc Î DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (3) (I C = 1.0 Adc, V CE = 10 Vdc, f test = 1.0 MHz) f T 4.0 Î MHz Output Capacitance 2N5883, 2N5884 C ob (V CB = 10 Vdc, I E Î 1000 pf = 0, f = 1.0 MHz) 2N5885, 2N Small Signal Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc, f test = 1.0 khz) h fe 20 Î Î SWITCHING CHARACTERISTICS Î Rise Time Î t r Î 0.7 µs Storage Time Î Fall Time (V CC = 30 Vdc, I C = 10 Adc, t =I s 1.0 µs I B1 B2 = 1.0 Adc) t f 0.8 µs Î *Indicates JEDEC Registered Data. (2) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. (3) f T = h fe f test. 2
3 TURN ON TIME µ TURN OFF TIME µ Figure 2. Switching Time Equivalent Test Circuits µ Figure 3. Turn On Time 3
4 θ θ θ θ Figure 4. Thermal Response Figure 5. Active Region Safe Operating Area µ There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. µ Figure 6. Turn Off Time Figure 7. Capacitance 4
5 PNP DEVICES 2N5883 and 2N5884 NPN DEVICES 2N5885 and 2N5886 Figure 8. DC Current Gain Figure 9. Collector Saturation Region Figure 10. On Voltages 5
6 PACKAGE DIMENSIONS CASE 1 07 TO 204AA (TO 3) ISSUE Z V H E 2 1 A N U C D 2 PL K L G Q T Y B 6
7 Notes 7
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 2N5883/D
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