SEMICONDUCTOR TECHNICAL DATA

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain hfe = 25 IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 8 V, 1 Second *Motorola Preferred Device 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 25 VOLTS 2 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 4 Vdc Emitter Base Voltage VEBO 5 Vdc Collector Emitter Voltage 1.5 V VCEX 4 Vdc Collector Current Continuous Collector Current Peak (1) IC 16 3 CASE 34G 2 TO 3PBL Base Current Continuous IB 5 Adc Adc Total Power TC = Derate Above PD Watts W/ C Operating and Storage Junction Temperature Range TJ, Tstg 65 to +15 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC.7 C/W ELECTRICAL CHARACTERISTICS (TC = unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = 1 madc, IB = ) Collector Cutoff Current (VCE = 2 Vdc, IB = ) VCEO(sus) 25 Vdc ICEO 1 µadc (1) Pulse Test: Pulse Width = µs, Duty Cycle 1%. (continued) Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc Motorola Bipolar Power Transistor Device Data 1

2 ELECTRICAL CHARACTERISTICS (TC = unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = ) Collector Cutoff Current (VCE = 25 Vdc, VBE(off) = 1.5 Vdc) IEBO 1 µadc ICEX 1 µadc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 5 Vdc, t = 1 s (non repetitive) (VCE = 8 Vdc, t = 1 s (non repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) hfe VBE(on) 2.2 Vdc Collector Emitter Saturation Voltage (IC = 8 Adc, IB =.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 khz, PLOAD = 1 WRMS (Matched pair hfe = 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 1 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 1 Vdc, IE =, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 3 µs, Duty Cycle 2% hfe unmatched hfe matched THD %.8.8 ft 4 MHz Cob 5 pf f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE = 1 V 5 V ftest = 1 MHz 1 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) ftest = 1 MHz VCE = 5 V 1 1 V Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product 2 Motorola Bipolar Power Transistor Device Data

3 TYPICAL CHARACTERISTICS TJ = 1 C 1 TJ = 1 C VCE = 2 V VCE = 2 V Figure 3. DC Current Gain, VCE = 2 V Figure 4. DC Current Gain, VCE = 2 V TJ = 1 C 1 TJ = 1 C VCE = 5 V VCE = 2 V Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V I C, COLLECTOR CURRENT (A) A IB = 2 A 1 A.5 A I C, COLLECTOR CURRENT (A) IB = 2 A A 25 1 A A VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 3

4 SATURATION VOLTAGE (VOLTS) IC/IB = 1 VBE(sat) VCE(sat) 1 TYPICAL CHARACTERISTICS 1 SATURATION VOLTAGE (VOLTS) IC/IB = 1 VBE(sat) VCE(sat) 1 1 Figure 9. Typical Saturation Voltages Figure 1. Typical Saturation Voltages V BE(on), BASE EMITTER VOLTAGE (VOLTS) 1 VCE = 2 V (SOLID) VCE = 5 V (DASHED) 1 1 V BE(on), BASE EMITTER VOLTAGE (VOLTS) 1 VCE = 2 V (SOLID) VCE = 5 V (DASHED) 1 1 Figure 11. Typical Base Emitter Voltage Figure 12. Typical Base Emitter Voltage I C, COLLECTOR CURRENT (AMPS) 1 1 SEC 1 TC = VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 2 C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 4 Motorola Bipolar Power Transistor Device Data

5 1 TC = 1 Cib TC = Cib C, CAPACITANCE (pf) 1 Cob C, CAPACITANCE (pf) 1 1 f(test) = 1 MHz) 1 VR, REVERSE VOLTAGE (VOLTS) 1 1 Cob f(test) = 1 MHz) 1 VR, REVERSE VOLTAGE (VOLTS) 1 Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance T, TOTAL HARMONIC HD DISTORTION (%) FREQUENCY (Hz) 1 1 Figure 16. Typical Total Harmonic Distortion +5 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 5 Ω DUT.5 Ω.5 Ω 8. Ω DUT 5 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5

6 PACKAGE DIMENSIONS.25 (.1) M T B M R N Y F 2 PL B Q U A L P K W G D 3 PL.25 (.1) M Y Q S J H C T E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC.215 BSC H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 34G 2 TO 3PBL ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 2912; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 135, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJL21193/D