CASE 221A 06 TO 220AB Collector Current Continuous ÎÎÎÎ I Peak(1) I B 4.0

Transcription

1 SEMICONDUCTOR TECHNICAL DATA Order this document by MJE86/D NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF86 have an applications specific state of the art die designed for use in 22 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hfe Fast Switching No Coil Required in Base Circuit for Turn Off (No Current Tail) Tight Parametric Distributions are Consistent Lot to Lot Two Package Choices: Standard TO 22 or Isolated TO 22 MJF86, Case 22D, is UL Recognized at 5 VRMS: File #E6969 MAXIMUM RATINGS ÎÎ Rating Symbol MJE86 MJF86 Unit ÎÎÎ ÎÎÎ Collector Emitter Sustaining Voltage VCEO 45 Vdc Collector Emitter Breakdown Voltage VCESÎ Vdc Emitter Base Voltage 9. ÎÎÎ Vdc Î Î Î CASE 22A 6 Î VEBOÎÎÎ TO 22AB Î Collector Current Continuous I Peak() ICM C ÎÎÎ 6. ÎÎÎ Î Adc MJE86 Î 5 Base Current Continuous I B 4. Î Adc Peak() IBM 8. Î RMS Isolation Voltage(2) Test No. Per Fig. 22a Î (for sec, R.H. < %, Test No. Per Fig. 22b VISOL 45ÎÎÎ ÎÎ Volts 5 TC = 25 C) Test No. Per Fig. 22c Î 5 Total Device Dissipation (TC = 25 C) PD 4 Derate above 25 C ÎÎ Î Watts.8.2 W/ C Operating and Storage Temperature TJ, TstgÎÎÎ 65 to 5 ÎÎÎ C THERMAL CHARACTERISTICS Î Rating Symbol MJE86 MJF86ÎÎÎ Î Unit Thermal Resistance Junction to Case RθJC.25 Junction to Ambient RθJA ÎÎ.25 C/W Maximum Lead Temperature for Soldering ÎÎÎ CASE 22D 2 ISOLATED TO 22 TYPE ÎÎÎ UL RECOGNIZED T Purposes: /8 from Case for 5 Seconds L 26 Î ÎÎ C MJF86 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise specified) Characteristic Symbol Min Typ Max ÎÎÎ Unit ÎÎ OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (IC = ma, L = 25 mh) VCEO(sus) 45 Vdc ÎÎ Collector Cutoff Current (VCE = Rated VCEO, IB = ) ICEO µadc ÎÎÎ Collector Cutoff Current (VCE = Rated VCES, VEB = ) (TC = 25 C) ÎÎ ÎÎÎ ICES µadc 5 ÎÎÎ Collector Cutoff Current (VCE = 8 V, VEB = ) (TC = 25 C) ÎÎ Emitter Cutoff Current (VEB = 9. Vdc, IC = ) IEBO µadc () Pulse Test: Pulse Width = 5. ms, Duty Cycle %. (continued) (2) Proper strike and creepage distance must be provided. Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer s and SWITCHMODE are trademarks of Motorola, Inc. REV *Motorola Preferred Device POWER TRANSISTOR 6. AMPERES VOLTS 4 and WATTS Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data

2 ÎÎ ELECTRICAL CHARACTERISTICS continued (TC = 25 C unless otherwise specified) ÎÎÎ ÎÎ Characteristic Symbol Min Typ Max Unit ÎÎ ON CHARACTERISTICS ÎÎÎ Base Emitter Saturation Voltage (IC =. Adc, IB =. Adc) ÎÎÎ Î VBE(sat).8 Base Emitter Saturation Voltage (IC =. Adc, IB =.6 Adc) ÎÎ.2 Vdc.94. Collector Emitter Saturation Voltage VCE(sat) Î Vdc ÎÎ (IC =. Adc, IB =. Adc).25.6 ÎÎ (TC = 25 C) (IC =. Adc, IB =.6 Adc).27.5 ÎÎÎ.65.7 (TC = 25 C).4.8 ÎÎ DC Current Gain (IC =.5 Adc, VCE = 5. Vdc) hfe 4 ÎÎÎ 4 (TC = 25 C) DC Current Gain (IC =. Adc, VCE =. Vdc) (TC = 25 C) 6. 2 ÎÎÎ ÎÎ ÎÎ DC Current Gain (IC =. Adc, VCE =. Vdc) (TC = 25 to 25 C) 7 ÎÎÎ DC Current Gain (IC = madc, VCE = 5. Vdc) 22 ÎÎ DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC =.5 Adc, VCE = Vdc, f =. MHz) ft 4 ÎÎÎ MHz Output Capacitance (VCB = Vdc, IE =, f =. MHz) Cob 75 2 pf Input Capacitance (VEB = 8. V) Cib 5 pf Î Dynamic Saturation Voltage: (IC =. Adc. µsî VCE(dsat) 5.5 ÎÎÎ Volts (TC = 25 C) 2 Î Determined. µs and ÎÎ IB = madc ÎÎ. µs respectively after VCC = V). µs Î. Î rising (TC = 25 C) 7. IB reaches 9% of Î final ÎÎÎ IB ÎÎ (see Figure 8) (IC =. Adc. µs ÎÎÎ (TC = 25 C) Î 9.5 ÎÎ 4.5 Î Î ÎÎ IB =.6 Adc ÎÎÎ ÎÎ VCC = V). ÎÎÎ µs (TC = 25 C) 2. ÎÎ 7.5 ÎÎ SWITCHING CHARACTERISTICS: Î Resistive Load (D.C. Î %, Pulse Width = 2 µs) Î Turn On Time (IC =. Adc, IB =.6 Adc, ton 9 ÎÎ 8 ns IB2 =.5 Adc, VCC = V) (TC = 25 C) Turn Off Time Î Î Î toff.7 ÎÎÎ (TC = 25 C) ÎÎ 2.5 µs 2. Turn On Time Î (IC =. Adc, IB =. Adc, ton 2 ÎÎ IB2 =.65 Adc, VCC = V) Î (TC = 25 C) ÎÎ ns Turn Off Time ÎÎÎ toff.2 ÎÎ 2.5 µs (TC = 25 C).5 ÎÎ SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = V, VCC = 5 V, L = 2 µh) ÎÎ Fall Time (IC =.5 Adc, IB =. Adc, tfi IB2 =.65 Adc) (TC = 25 C) ÎÎ 8 ns 2 Storage Time Î Î tsi.5 ÎÎ Î (TC = 25 C).9 ÎÎ 2.5 µs Crossover Time ÎÎÎ tc 22 ÎÎ 5 ns (TC = 25 C) 2 ÎÎ Fall Time (IC =. Adc, IB =.6 Adc, tfi 85 IB2 =.5 Adc) (TC = 25 C) ÎÎ 5 ns 2 Storage Time Î Î tsi 2.5 ÎÎ ÎÎÎ (TC = 25 C) ÎÎ.2 µs 2.75 Crossover Time tc 2 ÎÎ ns (TC = 25 C) 2 Motorola Bipolar Power Transistor Device Data

3 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN TJ = 25 C TJ = 2 C VCE = V TJ = 25 C h FE, DC CURRENT GAIN TJ = 2 C VCE = 5 V.. Figure. DC Current Volt.. Figure 2. DC Current 5 Volts 2 V CE, VOLTAGE (VOLTS).5.5 IC = A 2 A A 5 A 6 A V CE, VOLTAGE (VOLTS). IC/IB =.. IB, BASE CURRENT (AMPS) IC/IB = 5... IC COLLECTOR CURRENT (AMPS) TJ = 25 C Figure. Collector Saturation Region Figure 4. Collector Emitter Saturation Voltage V BE, VOLTAGE (VOLTS) TJ = 25 C IC/IB = 5 IC/IB =. C, CAPACITANCE (pf) Cib Cob VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) f = MHz Figure 5. Base Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data

4 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 2 5 VCC = V PW = 2 µs TJ = 25 C 4 5 IC/IB = 5 TJ = 25 C VCC = V PW = 2 µs t, TIME (ns) IC/IB = 5 IC/IB = t, TIME (ns) IC/IB = Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff t, TIME (ns) IC/IB = 5 5 IC/IB = TJ = 25 C IC COLLECTOR CURRENT (AMPS) VCC = 5 V VZ = V LC = 2 µh t si, STORAGE TIME (ns) TJ = 25 C IC = A hfe, FORCED GAIN VCC = 5 V VZ = V LC = 2 µh IC =. A Figure 9. Inductive Storage Time, tsi Figure. Inductive Storage Time, tsi(hfe) 5 25 tc t, TIME (ns) tfi tc t, TIME (ns) 2 5 VCC = 5 V VZ = V LC = 2 µh tfi VCC = 5 V 5 VZ = V LC = 2 µh TJ = 25 C TJ = 25 C Figure. Inductive Switching, tc and tfi IC/IB = 5 Figure 2. Inductive Switching, tc and tfi IC/IB = 4 Motorola Bipolar Power Transistor Device Data

5 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) t fi, FALL TIME (ns) IC = A 4 TJ = 25 C hfe, FORCED GAIN IC =. A VCC = 5 V VZ = V LC = 2 µh T C, CROSSOVER TIME (ns) IC =. A TJ = 25 C IC = A hfe, FORCED GAIN VCC = 5 V VZ = V LC = 2 µh Figure. Inductive Fall Time Figure 4. Inductive Crossover Time I C, COLLECTOR CURRENT (AMPS).. DC (MJE86) 5 ms DC (MJF86) GUARANTEED SAFE OPERATING AREA INFORMATION ms µs µs EXTENDED SOA VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (AMPS) VBE(off) = V 4, 5 V 6 8 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) TC 25 C IC/IB 4 LC = 5 µh 5 V Figure 5. Forward Bias Safe Operating Area Figure 6. Reverse Bias Switching Safe Operating Area POWER DERATING FACTOR,,8,6,4,2, 2 THERMAL DERATING TC, CASE TEMPERATURE ( C) SECOND BREAKDOWN DERATING Figure 7. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when TC 25 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 5 may be found at any case temperature by using the appropriate curve on Figure 7. TJ(pk) may be calculated from the data in Figure 2 and 2. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 6). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Motorola Bipolar Power Transistor Device Data 5

6 VOLTS 5 4 VCE dyn µs 2 dyn µs 2 9% IB µs 4 µs IB TIME Figure 8. Dynamic Saturation Voltage Measurements IC VCLAMP IB % VCLAMP 9% IB tsi TIME % IC Figure 9. Inductive Switching Measurements tc 9% IC tfi +5 V µf 5 Ω W Ω W MTP8P µf VCE PEAK IC PEAK + V COMMON Voff MPF9 5 Ω MPF9 5 µf 5 Ω W MUR5 MJE2 MTP8P MTP2N RB Iout A RB2 µf VCE IB IB V(BR)CEO(sus) L = mh RB2 = VCC = 2 VOLTS IC(pk) = ma IB2 INDUCTIVE SWITCHING L = 2 µh RB2 = VCC = 5 VOLTS RB SELECTED FOR DESIRED IB RBSOA L = 5 µh RB2 = VCC = 5 VOLTS RB SELECTED FOR DESIRED IB Table. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data

7 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED). D = SINGLE PULSE... P(pk) t, TIME (ms) t t 2 DUTY CYCLE, D = t/t2 RθJC(t) = r(t) RθJC RθJC =.25 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t) Figure 2. Typical Thermal Response (ZθJC(t)) for MJE86 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED). D = RθJC(t) = r(t) RθJC RθJC =.2 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t). SINGLE PULSE.. P(pk) t, TIME (ms) t t 2 DUTY CYCLE, D = t/t2 Figure 2. Typical Thermal Response (ZθJC(t)) for MJF86 Motorola Bipolar Power Transistor Device Data 7

8 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS.7 MIN MOUNTED FULLY ISOLATED PACKAGE LEADS.7 MIN HEATSINK HEATSINK HEATSINK. MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4 4 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER NUT Figure 2a. Screw Mounted HEATSINK Figure 2b. Clip Mounted Figure 2. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in. lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4 4 screw, without washers, and applying a torque in excess of 2 in. lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4 4 screws indicate that the screw slot fails between 5 to 2 in. lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding in. lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN4. 8 Motorola Bipolar Power Transistor Device Data

9 PACKAGE DIMENSIONS H Q Z L V G B 4 2 N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V.45.5 Z STYLE : PIN. BASE 2. COLLECTOR. EMITTER 4. COLLECTOR CASE 22A 6 TO 22AB ISSUE Y A K F Q H B 2 G N L D PL Y U.25 (.) M B M Y C T S J R SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G. BSC 2.54 BSC H J K L N.2 BSC 5.8 BSC Q R S U STYLE 2: PIN. BASE 2. COLLECTOR. EMITTER CASE 22D 2 (ISOLATED TO 22 TYPE) UL RECOGNIZED: FILE #E6969 ISSUE D Motorola Bipolar Power Transistor Device Data 9

10 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 292; Phoenix, Arizona F Seibu Butsuryu Center, 4 2 Tatsumi Koto Ku, Tokyo 5, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJE86/D