BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS
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1 NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: Features Integrated HighVoltage Active Clamp Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the 40 C to +25 C Temperature Range Clamping Energy Capability 0% Tested in a Live Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times Offered in Plastic SOT93/TO28 Type or TO220 Packages PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Max Unit CollectorEmitter Sustaining Voltage O 350 Vdc CollectorEmitter Voltage V EBO 6.0 Vdc Collector Current Base Current Continuous Peak Continuous Peak Total Power T C = 25C Derate above 25C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS M 20 I B 3.0 I BM 6.0 P D 50.0 T J, T stg 65 to +75 Adc Adc W W/C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.0 C/W Maximum Lead Temperature for Soldering Purposes: /8 from Case for 5 Seconds C T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 50 WATTS 2 3 BASE 360 V CLAMP COLLECTOR 2,4 4 EMITTER 3 SOT93 CASE 340D STYLE TO247 CASE 340L STYLE 3 NOTE: Effective June 202 this device will be available only in the TO247 package. Reference FPCN# ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 202 May, 202 Rev. 6 Publication Order Number: BU323Z/D
2 MARKING DIAGRAMS TO247 TO28 BU323Z AYWWG AYWWG BU323Z BASE 3 EMITTER BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR BU323Z = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Order Number Package Type Shipping BU323ZG BU323ZG TO28 (PbFree) TO247 (PbFree) 30 Units / Rail 30 Units / Rail 2
3 ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS () CollectorEmitter Clamping Voltage ( = 7.0 A) (T C = 40 C to +25 C) CollectorEmitter Cutoff Current ( = 200 V, I B = 0) EmitterBase Leakage Current (V EB = 6.0 Vdc, = 0) ON CHARACTERISTICS () BaseEmitter Saturation Voltage ( = 8.0 Adc, I B = 0 madc) ( = Adc, I B = 0.25 Adc) CollectorEmitter Saturation Voltage ( = 7.0 Adc, I B = 70 madc) ( = 8.0 Adc, I B = 0. Adc) ( = Adc, I B = 0.25 Adc) (T C = 25 C) (T C = 25 C) BaseEmitter On Voltage ( = 5.0 Adc, = 2.0 Vdc) (T C = 40 C to +25 C) ( = 8.0 Adc, = 2.0 Vdc) Diode Forward Voltage Drop (I F = Adc) V CLAMP Vdc EO 0 Adc I EBO 50 madc V BE(sat) (sat) V BE(on) Vdc Vdc Vdc V F 2.5 Vdc DC Current Gain ( = 6.5 Adc, =.5 Vdc) (T C = 40 C to +25 C) ( = 5.0 Adc, = 4.6 Vdc) h FE DYNAMIC CHARACTERISTICS Current Gain Bandwidth ( = 0.2 Adc, = Vdc, f =.0 MHz) Output Capacitance (V CB = Vdc, I E = 0, f =.0 MHz) Input Capacitance (V EB = 6.0 V) CLAMPING ENERGY (see notes) Repetitive NonDestructive Energy Dissipated at turnoff: ( = 7.0 A, L = 8.0 mh, R BE = 0 ) (see Figures 2 and 4) f T 2.0 MHz C ob 200 pf C ib 550 pf W CLAMP 200 mj SWITCHING CHARACTERISTICS: Inductive Load (L = mh) Fall Time ( = 6.5 A, I B = 45 ma, t fi 625 ns Storage Time V BE(off) = 0, R BE(off) = 0, t si 30 s Crossover Time V CC = 4 V, V Z = 300 V) t c.7 s. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 3
4 I NOM = 6.5 A Output transistor turns on: = 40 ma MERCURY CONTACTS WETTED RELAY L INDUCTANCE (8 mh) MONITOR (V GATE ) CURRENT SOURCE High Voltage Circuit turns on: = 20 ma Avalanche diode turns on: = 0 A 250 V 300 V 340 V Icer Leakage Current V CLAMP NOMINAL = 400 V I B CURRENT SOURCE R BE = 0 V BEoff I B2 SOURCE MONITOR 0. NON INDUCTIVE Figure. = f( ) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a builtin avalanche diode and a special high voltage driving circuit. During an autoprotect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in FBSOA. Because of the builtin zener and associated network, the = f( ) curve exhibits an unfamiliar shape compared to standard products as shown in Figure. The bias parameters, V CLAMP, I B, V BE(off), I B2,, and the inductance, are applied according to the Device Under Test (DUT) specifications. and are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 0% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: (peak) = 7.0 A, H = 5.0 A, L = 0 ma, I B = 0 ma, R BE = 0, V gate = 280 V, L = 8.0 mh IC, COLLECTOR CURRENT (AMPS) T C = 25 C 250ms ms THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED O ms 300s 0 340V, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 00 4
5 PEAK HIGH LOW The shaded area represents the amount of energy the device can sustain, under given DC biases ( /I B /V BE(off) / R BE ), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and PEAK /I B /V BE(off) biases, the remains outside the shaded area and greater than the V GATE minimum limit, Figure 4a. (a) V GATE MIN PEAK HIGH LOW PEAK (b) V GATE MIN HIGH The transistor FAILS if the is less than the V GATE (minimum limit) at any point along the / curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. LOW (c) V GATE MIN PEAK HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the V GATE value, Figure 4d. LOW (d) V GATE MIN Figure 4. Energy Test Criteria for BU323Z 5
6 TYPICAL T J = 25 C hfe, DC CURRENT GAIN C -40 C hfe, DC CURRENT GAIN 00 0 TYP + 6Σ TYP - 6Σ 0 =.5 V 00, COLLECTOR CURRENT (MILLIAMPS) = 5 V, T J = 25 C , COLLECTOR CURRENT (MILLIAMPS) 0000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) = 3 A 5 A 8 A A 7 A I B, BASE CURRENT (MILLIAMPS) T J = 25 C 0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) /I B = C, COLLECTOR CURRENT (AMPS) T J = 25 C Figure 7. Collector Saturation Region Figure 8. CollectorEmitter Saturation Voltage VBE, BASE-EMITTER VOLTAGE (VOLTS) /I B = 50 T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) VBE(on), BASE-EMITTER VOLTAGE (VOLTS) = 2 VOLTS T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) Figure 9. BaseEmitter Saturation Voltage Figure. BaseEmitter ON Voltages 6
7 PACKAGE DIMENSIONS SOT93 (TO28) CASE 340D02 ISSUE E B Q E C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. K S L U V 2 3 G 4 D A J H MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E G H J K 3.00 REF.220 REF L Q S U 4.00 REF 0.57 REF V.75 REF STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TO247 CASE 340L02 ISSUE F N A K F 2 PL B U L 2 3 P Y W J G D 3 PL 0.25 (0.0) M Y Q S C T E H 4 Q 0.63 (0.025) M T B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D E F G 5.45 BSC 0.25 BSC H J K L N P Q U 6.5 BSC BSC W STYLE 3: PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 7
8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative BU323Z/D
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