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5 MJE3009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE3009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEO Collector-Emitter Voltage (I B = 0) 400 V VCEV Collector-Emitter Voltage (VBE = -.5 V) 700 V VEBO Emitter-Base Voltage (IC =0) 9 V I C Collector Current 2 A I CM Collector Peak Current (t p 0 ms) 24 A IB Base Current 6 A IBM Base Peak Current (tp 0 ms) 2 A IE Emitter Current 8 A I EM Emitter Peak Current 36 A P tot Total Power Dissipation at T c 25 o C 00 W Tstg Storage Temperature -65 to 50 Tj Max. Operating Junction Temperature 50 o C o C September 997 /6

6 MJE3009 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV I EBO V CEO(sus) VCE(sat) V BE(sat) Collector Cut-off Current Emitter Cut-off Current (I C =0) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCEV = rated value VBE(off) =.5V VCEV = rated value VEB(off) =.5V Tcase = 00 o C V EB =9V ma I C =0mA I E = V IC =5A IB =A IC=8A IB =.6A IC=2A IB =3A IC =8A IB =.6A Tcase = 00 o C I C =5A I B =A I C =8A I B =.6A I C =8A I B =.6A T case = 00 o C hfe DC Current Gain IC =5A VCE =5V IC=8A VCE =5V f T Transistor Frequency I C = 500 ma V CE =0V 4 MHz COB Output Capacitance VCB =0A IE=0 80 pf f=0.mhz ton ts Turn-on Time Storage Time Fall Time tf Pulsed: Pulse duration = 300µs, duty cycle 2% RESISTIVE LOAD VCC =25V IC=8A IB =-IB2 =.6A tp =25µs Duty Cycle % ma ma V V V V V V V µs µs µs Safe Operating Areas Derating Curve 2/6

7 MJE3009 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6

8 MJE3009 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit () Fast electronic switch (2) Non-inductive Resistor (3) Fast recoveryrectifier 4/6

9 MJE3009 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA P0C 5/6

10 MJE3009 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequencesof use of such information nor for any infringementof patents or other rightsof third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in thispublication are subject to change without notice. This publication supersedes and replacesall informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for useas critical components in life support devices or systems withoutexpress written approval of SGS-THOMSON Microelectonics. 997 SGS-THOMSONMicroelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A... 6/6

11 SEMICONDUCTOR TECHNICAL DATA Order this document by MJE3009/D The MJE3009 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 5 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive TC = 00 C Inductive Switching Matrix 3 to 2 Amp, 25 and 00 C... 8 A, 00 C is 20 ns (Typ). 700 V Blocking Capability SOA and Switching Applications Information. *Motorola Preferred Device 2 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 00 WATTS ÎÎ MAXIMUM RATINGS ÎÎ Rating ÎÎÎ Symbol Value Unit ÎÎ Collector Emitter Voltage ÎÎÎ VCEO(sus) 400 Vdc ÎÎ Collector Emitter Voltage ÎÎÎ VCEV 700 Vdc ÎÎ Emitter Base Voltage ÎÎÎ VEBO 9 Vdc ÎÎ Collector Current Continuous ÎÎÎ IC 2 Adc Peak () ICM 24 ÎÎ Base Current Continuous IB 6 Adc ÎÎ Peak () ÎÎ IBM 2 ÎÎ Emitter Current Continuous ÎÎ IE 8 Adc ÎÎ ÎÎ Peak () IEM 36 Total Power TA = 25 C ÎÎÎ PD 2 Watts Derate above 25 C 6 mw/ C ÎÎ Total Power ÎÎ TC = 25 C ÎÎÎ PD 00 Watts ÎÎÎ Derate above 25 C 800 mw/ C ÎÎ Operating and Storage Junction Temperature Range TJ, Tstg 65 to +50 C ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Ambient RθJA 62.5 C/W ÎÎ Thermal Resistance, Junction to Case RθJC.25 C/W ÎÎ Maximum Lead Temperature for Soldering Purposes: TL 275 C ÎÎ /8 from Case for 5 Seconds Î () Pulse Test: Pulse Width = 5 ms, Duty Cycle 0%. CASE 22A 06 TO 220AB Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer s and SWITCHMODE are trademarks of Motorola, Inc. REV Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data

12 ÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) ÎÎÎ ÎÎÎ Characteristic Symbol Min Typ Max Unit ÎÎ *OFF CHARACTERISTICS Collector Emitter Sustaining Voltage ÎÎÎ VCEO(sus) 400 Vdc ÎÎ (IC = 0 ma, IB = 0) Collector Cutoff Current ÎÎÎ ÎÎ ICEV madc (VCEV = Rated Value, VBE(off) =.5 Vdc) ÎÎÎ (VCEV = Rated Value, VBE(off) =.5 Vdc, TC = 00 C) 5 ÎÎ ÎÎÎ Emitter Cutoff Current IEBO madc (VEB = 9 Vdc, IC = 0) ÎÎ ÎÎ SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure Clamped Inductive SOA with Base Reverse Biased See Figure 2 ÎÎ ÎÎ *ON CHARACTERISTICS DC Current Gain hfe ÎÎ ÎÎ (IC = 5 Adc, VCE = 5 Vdc) 8 40 (IC = 8 Adc, VCE = 5 Vdc) 6 30 ÎÎÎ Collector Emitter Saturation Voltage ÎÎÎ VCE(sat) Vdc (IC = 5 Adc, IB = Adc) ÎÎÎ (IC = 8 Adc, IB =.6 Adc) (IC = 2 Adc, IB = 3 Adc) ÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00 C).5 3 ÎÎÎ 2 Base Emitter Saturation Voltage (IC = 5 Adc, IB = Adc) (IC = 8 Adc, IB =.6 Adc) VBE(sat) ÎÎ Vdc.2 ÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00 C).6 ÎÎÎ ÎÎ.5 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ft 4 ÎÎÎ MHz ÎÎ (IC = 500 madc, VCE = 0 Vdc, f = MHz) Output Capacitance Cob 80 pf (VCB = 0 Vdc, IE = 0, f = 0. MHz) ÎÎ ÎÎ SWITCHING CHARACTERISTICS ÎÎ Resistive Load (Table ) Delay Time ÎÎÎ td ÎÎÎ µs Rise Time Î (VCC = 25 Vdc, IC = 8 A, tr 0.45 ÎÎÎ µs Storage Time Î IB = IB2 =.6 A, tp = 25 µs, Duty Cycle %) ts.3 3 ÎÎÎ µs Fall Time ÎÎÎ tf ÎÎÎ µs ÎÎ Inductive Load, Clamped (Table, Figure 3) Voltage Storage Time ÎÎÎ (IC = 8 A, Vclamp = 300 Vdc, tsv ÎÎÎ µs Crossover Time Î IB =.6 A, VBE(off) = 5 Vdc, TC = 00 C) ÎÎÎ µs *Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. tc Motorola Bipolar Power Transistor Device Data 3 677

13 IC, COLLECTOR CURRENT (AMP) TC = 25 C dc ms THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO µs VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 0 µs IC, COLLECTOR (AMP) TC 00 C IB = 2.5 A 3 V.5 V VBE(off) = 9 V 5 V VCEV, COLLECTOR EMITTER CLAMP VOLTAGE (VOLTS) 800 Figure. Forward Bias Safe Operating Area Figure 2. Reverse Bias Switching Safe Operating Area The Safe Operating Area figures shown in Figures and 2 are specified ratings for these devices under the test conditions shown. POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING TC, CASE TEMPERATURE ( C) Figure 3. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 0% but must be derated when TC 25 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE ZθJC(t) = r(t) RθJC RθJC =.25 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) ZθJC(t) k t, TIME (ms) P(pk) t t 2 DUTY CYCLE, D = t/t2 Figure 4. Typical Thermal Response [ZθJC(t)] Motorola Bipolar Power Transistor Device Data

14 hfe, DC CURRENT GAIN TJ = 50 C C 0 55 C 7 VCE = 5 V IC, COLLECTOR CURRENT (AMP) 0 20 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 2.6 IC = A 3 A 5 A 8 A 2 A TJ = 25 C IB, BASE CURRENT (AMP) Figure 5. DC Current Gain Figure 6. Collector Saturation Region V, VOLTAGE (VOLTS) IC/IB = 3 25 C TJ = 55 C 50 C V, VOLTAGE (VOLTS) IC/IB = 3 TJ = 50 C 25 C 55 C IC, COLLECTOR CURRENT (AMP) Figure 7. Base Emitter Saturation Voltage IC, COLLECTOR CURRENT (AMP) Figure 8. Collector Emitter Saturation Voltage, COLLECTOR CURRENT ( µ A) IC 0K K 00 0 VCE = 250 V TJ = 50 C 25 C 00 C 75 C 50 C 25 C 0. REVERSE FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pf) 4K 2K K Cib Cob VR, REVERSE VOLTAGE (VOLTS) TJ = 25 C Figure 9. Collector Cutoff Region Figure 0. Capacitance Motorola Bipolar Power Transistor Device Data 3 679

15 Table. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS PW 5 V DUTY CYCLE 0% tr, tf 0 ns µf k N µf 270 NOTE PW and V CC Adjusted for Desired I C R B Adjusted for Desired I B k + 5 V N N4933 2N2222 k 2N /2 W V VCC MJE20 L IC RB IB D.U.T. MJE200 VBE(off) MR826* Vclamp *SELECTED FOR kv 5. k VCE V RC TUT RB SCOPE D 4.0 V CIRCUIT VALUES Coil Data: Ferroxcube Core #6656 Full Bobbin (~6 Turns) #6 GAP for 200 µh/20 A Lcoil = 200 µh VCC = 20 V Vclamp = 300 Vdc VCC = 25 V RC = 5 Ω D = N5820 or Equiv. RB = Ω TEST WAVEFORMS IC VCE ICM t VCEM TIME tf CLAMPED tf UNCLAMPED t2 tf t2 t Vclamp OUTPUT WAVEFORMS t ADJUSTED TO OBTAIN IC t t2 L coil (ICM) VCC L coil (ICM) Vclamp Test Equipment Scope Tektronics 475 or Equivalent +0 V 25 µs 0 8 V tr, tf < 0 ns Duty Cycle =.0% RB and RC adjusted for desired IB and IC INTRODUCTION APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS The primary considerations when selecting a power transistor for SWITCHMODE applications are voltage and current ratings, switching speed, and energy handling capability. In this section, these specifications will be discussed and related to the circuit examples illustrated in Table 2.() VOLTAGE REQUIREMENTS Both blocking voltage and sustaining voltage are important in SWITCHMODE applications. Circuits B and C in Table 2 illustrate applications that require high blocking voltage capability. In both circuits the switching transistor is subjected to voltages substantially higher than VCC after the device is completely off (see load line diagrams at IC = Ileakage 0 in Table 2). The blocking capability at this point depends on the base to emitter conditions and the device junction temperature. Since the highest device capability occurs when the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (.5 Volts) both at 25 C and 00 C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn on and turn off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn on and the pulsed forward bias SOA curves (Figure ) are the proper design limits. For inductive loads, high voltage and current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area (Figure 2) which represents voltage current conditions that can be sustained during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. () For detailed information on specific switching applications, see Motorola Application Notes AN 79, AN Motorola Bipolar Power Transistor Device Data

16 VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn on and within the reverse bias SOA curve during turn off are considered safe, with the following assumptions: () The device thermal limitations are not exceeded. (2) The turn on time does not exceed 0 µs (see standard pulsed forward SOA curves in Figure ). (3) The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling t, TIME (ns) K VCC = 25 V IC/IB = 5 TJ = 25 C tr capability and low saturation voltage. On this data sheet, these parameters have been specified at 8 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS RESISTIVE SWITCHING PERFORMANCE In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base emitter junction during turn off. The reverse biased switching characteristics for inductive loads are discussed in Figure and Table 3 and resistive loads in Figures 3 and 4. Usually the inductive load component will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table ) providing correlation between test procedures and actual use conditions. t, TIME (ns) 2K K ts VCC = 25 V IC/IB = 5 TJ = 25 C VBE(off) = 5 V tf IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure. Turn On Time Figure 2. Turn Off Time IC 90% VCEM 90% IC Vclamp tsv trv tfi tti IC VCE IB Vclamp 90% IB 0% VCEM tc 0% ICM 2% I C CURRENT 2 A/DIV VOLTAGE 50 V/DIV IC VCE TIME Figure 3. Inductive Switching Measurements TIME 20 ns/div Figure 4. Typical Inductive Switching Waveforms (at 300 V and 2 A with IB = 2.4 A and VBE(off) = 5 V) Motorola Bipolar Power Transistor Device Data 3 68

17 Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS A SERIES SWITCHING REGULATOR VCC VO Collector Current 24 A TC = 00 C 2 A TURN ON TURN OFF TURN ON (FORWARD BIAS) SOA ton 0 ms DUTY CYCLE 0% PD = 4000 W V TURN OFF (REVERSE BIAS) SOA.5 V VBE(off) 9.0 V DUTY CYCLE 0% IC VCE VCC TIME t VCC 400 V 700 V COLLECTOR VOLTAGE TIME t B RINGING CHOKE INVERTER VCC N VO Collector Current 24 A TC = 00 C 2 A TURN OFF TURN ON TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% PD = 4000 W 2 VCC 400 V 350 V TURN OFF (REVERSE BIAS) SOA TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% 700 V IC VCC + N(Vo) VCE ton VCC toff t LEAKAGE SPIKE VCC + N(Vo) COLLECTOR VOLTAGE t C PUSH PULL INVERTER/CONVERTER VCC VO Collector Current 24 A TC = 00 C 2 A TURN OFF TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% PD = 4000 W V TURN OFF (REVERSE BIAS) SOA TURN ON TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% 2 VCC IC VCE ton 2 VCC VCC toff t VCC 400 V 700 V COLLECTOR VOLTAGE t SOLENOID DRIVER 24 A TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% IC D VCC SOLENOID Collector Current TC = 00 C 2 A TURN OFF TURN ON PD = 4000 W V TURN OFF (REVERSE BIAS) SOA TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% VCC VCE ton toff t VCC 400 V 700 V COLLECTOR VOLTAGE t Motorola Bipolar Power Transistor Device Data

18 Table 3. Typical Inductive Switching Performance Î IC ÎÎ T AMP C tsv trv tfi tti tc C ns ns ns ns ns ÎÎÎ ÎÎ ÎÎ Î ÎÎ ÎÎÎ 2 ÎÎÎ NOTE: All Data recorded In the Inductive Switching Circuit In Table. SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB to 0% VCEM trv = Voltage Rise Time, 0 90% VCEM tfi = Current Fall Time, 90 0% ICM tti = Current Tail, 0 2% ICM tc = Crossover Time, 0% VCEM to 0% ICM An enlarged portion of the turn off waveforms is shown in Figure 3 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN 222: PSWT = /2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 4. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a SWITCHMODE transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 00 C. Motorola Bipolar Power Transistor Device Data 3 683

19 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 22A 06 TO 220AB ISSUE Y Motorola Bipolar Power Transistor Device Data

20 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 2092; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 35, Japan MFAX: RMFAX0@ .sps.mot.com TOUCHTONE (602) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJE3009/D 3 685

21 SEMICONDUCTOR TECHNICAL DATA Order this document by MJE3009/D The MJE3009 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 5 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive TC = 00 C Inductive Switching Matrix 3 to 2 Amp, 25 and 00 C... 8 A, 00 C is 20 ns (Typ). 700 V Blocking Capability SOA and Switching Applications Information. *Motorola Preferred Device 2 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 00 WATTS ÎÎ MAXIMUM RATINGS ÎÎ Rating ÎÎÎ Symbol Value Unit ÎÎ Collector Emitter Voltage ÎÎÎ VCEO(sus) 400 Vdc ÎÎ Collector Emitter Voltage ÎÎÎ VCEV 700 Vdc ÎÎ Emitter Base Voltage ÎÎÎ VEBO 9 Vdc ÎÎ Collector Current Continuous ÎÎÎ IC 2 Adc Peak () ICM 24 ÎÎ Base Current Continuous IB 6 Adc ÎÎ Peak () ÎÎ IBM 2 ÎÎ Emitter Current Continuous ÎÎ IE 8 Adc ÎÎ ÎÎ Peak () IEM 36 Total Power TA = 25 C ÎÎÎ PD 2 Watts Derate above 25 C 6 mw/ C ÎÎ Total Power ÎÎ TC = 25 C ÎÎÎ PD 00 Watts ÎÎÎ Derate above 25 C 800 mw/ C ÎÎ Operating and Storage Junction Temperature Range TJ, Tstg 65 to +50 C ÎÎ THERMAL CHARACTERISTICS ÎÎ Characteristic Symbol Max Unit ÎÎ Thermal Resistance, Junction to Ambient RθJA 62.5 C/W ÎÎ Thermal Resistance, Junction to Case RθJC.25 C/W ÎÎ Maximum Lead Temperature for Soldering Purposes: TL 275 C ÎÎ /8 from Case for 5 Seconds Î () Pulse Test: Pulse Width = 5 ms, Duty Cycle 0%. CASE 22A 06 TO 220AB Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer s and SWITCHMODE are trademarks of Motorola, Inc. REV Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data

22 ÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) ÎÎÎ ÎÎÎ Characteristic Symbol Min Typ Max Unit ÎÎ *OFF CHARACTERISTICS Collector Emitter Sustaining Voltage ÎÎÎ VCEO(sus) 400 Vdc ÎÎ (IC = 0 ma, IB = 0) Collector Cutoff Current ÎÎÎ ÎÎ ICEV madc (VCEV = Rated Value, VBE(off) =.5 Vdc) ÎÎÎ (VCEV = Rated Value, VBE(off) =.5 Vdc, TC = 00 C) 5 ÎÎ ÎÎÎ Emitter Cutoff Current IEBO madc (VEB = 9 Vdc, IC = 0) ÎÎ ÎÎ SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased IS/b See Figure Clamped Inductive SOA with Base Reverse Biased See Figure 2 ÎÎ ÎÎ *ON CHARACTERISTICS DC Current Gain hfe ÎÎ ÎÎ (IC = 5 Adc, VCE = 5 Vdc) 8 40 (IC = 8 Adc, VCE = 5 Vdc) 6 30 ÎÎÎ Collector Emitter Saturation Voltage ÎÎÎ VCE(sat) Vdc (IC = 5 Adc, IB = Adc) ÎÎÎ (IC = 8 Adc, IB =.6 Adc) (IC = 2 Adc, IB = 3 Adc) ÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00 C).5 3 ÎÎÎ 2 Base Emitter Saturation Voltage (IC = 5 Adc, IB = Adc) (IC = 8 Adc, IB =.6 Adc) VBE(sat) ÎÎ Vdc.2 ÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00 C).6 ÎÎÎ ÎÎ.5 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ft 4 ÎÎÎ MHz ÎÎ (IC = 500 madc, VCE = 0 Vdc, f = MHz) Output Capacitance Cob 80 pf (VCB = 0 Vdc, IE = 0, f = 0. MHz) ÎÎ ÎÎ SWITCHING CHARACTERISTICS ÎÎ Resistive Load (Table ) Delay Time ÎÎÎ td ÎÎÎ µs Rise Time Î (VCC = 25 Vdc, IC = 8 A, tr 0.45 ÎÎÎ µs Storage Time Î IB = IB2 =.6 A, tp = 25 µs, Duty Cycle %) ts.3 3 ÎÎÎ µs Fall Time ÎÎÎ tf ÎÎÎ µs ÎÎ Inductive Load, Clamped (Table, Figure 3) Voltage Storage Time ÎÎÎ (IC = 8 A, Vclamp = 300 Vdc, tsv ÎÎÎ µs Crossover Time Î IB =.6 A, VBE(off) = 5 Vdc, TC = 00 C) ÎÎÎ µs *Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. tc Motorola Bipolar Power Transistor Device Data 3 677

23 IC, COLLECTOR CURRENT (AMP) TC = 25 C dc ms THERMAL LIMIT BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO µs VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 0 µs IC, COLLECTOR (AMP) TC 00 C IB = 2.5 A 3 V.5 V VBE(off) = 9 V 5 V VCEV, COLLECTOR EMITTER CLAMP VOLTAGE (VOLTS) 800 Figure. Forward Bias Safe Operating Area Figure 2. Reverse Bias Switching Safe Operating Area The Safe Operating Area figures shown in Figures and 2 are specified ratings for these devices under the test conditions shown. POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING TC, CASE TEMPERATURE ( C) Figure 3. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 0% but must be derated when TC 25 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE ZθJC(t) = r(t) RθJC RθJC =.25 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) ZθJC(t) k t, TIME (ms) P(pk) t t 2 DUTY CYCLE, D = t/t2 Figure 4. Typical Thermal Response [ZθJC(t)] Motorola Bipolar Power Transistor Device Data

24 hfe, DC CURRENT GAIN TJ = 50 C C 0 55 C 7 VCE = 5 V IC, COLLECTOR CURRENT (AMP) 0 20 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 2.6 IC = A 3 A 5 A 8 A 2 A TJ = 25 C IB, BASE CURRENT (AMP) Figure 5. DC Current Gain Figure 6. Collector Saturation Region V, VOLTAGE (VOLTS) IC/IB = 3 25 C TJ = 55 C 50 C V, VOLTAGE (VOLTS) IC/IB = 3 TJ = 50 C 25 C 55 C IC, COLLECTOR CURRENT (AMP) Figure 7. Base Emitter Saturation Voltage IC, COLLECTOR CURRENT (AMP) Figure 8. Collector Emitter Saturation Voltage, COLLECTOR CURRENT ( µ A) IC 0K K 00 0 VCE = 250 V TJ = 50 C 25 C 00 C 75 C 50 C 25 C 0. REVERSE FORWARD VBE, BASE EMITTER VOLTAGE (VOLTS) C, CAPACITANCE (pf) 4K 2K K Cib Cob VR, REVERSE VOLTAGE (VOLTS) TJ = 25 C Figure 9. Collector Cutoff Region Figure 0. Capacitance Motorola Bipolar Power Transistor Device Data 3 679

25 Table. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS PW 5 V DUTY CYCLE 0% tr, tf 0 ns µf k N µf 270 NOTE PW and V CC Adjusted for Desired I C R B Adjusted for Desired I B k + 5 V N N4933 2N2222 k 2N /2 W V VCC MJE20 L IC RB IB D.U.T. MJE200 VBE(off) MR826* Vclamp *SELECTED FOR kv 5. k VCE V RC TUT RB SCOPE D 4.0 V CIRCUIT VALUES Coil Data: Ferroxcube Core #6656 Full Bobbin (~6 Turns) #6 GAP for 200 µh/20 A Lcoil = 200 µh VCC = 20 V Vclamp = 300 Vdc VCC = 25 V RC = 5 Ω D = N5820 or Equiv. RB = Ω TEST WAVEFORMS IC VCE ICM t VCEM TIME tf CLAMPED tf UNCLAMPED t2 tf t2 t Vclamp OUTPUT WAVEFORMS t ADJUSTED TO OBTAIN IC t t2 L coil (ICM) VCC L coil (ICM) Vclamp Test Equipment Scope Tektronics 475 or Equivalent +0 V 25 µs 0 8 V tr, tf < 0 ns Duty Cycle =.0% RB and RC adjusted for desired IB and IC INTRODUCTION APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS The primary considerations when selecting a power transistor for SWITCHMODE applications are voltage and current ratings, switching speed, and energy handling capability. In this section, these specifications will be discussed and related to the circuit examples illustrated in Table 2.() VOLTAGE REQUIREMENTS Both blocking voltage and sustaining voltage are important in SWITCHMODE applications. Circuits B and C in Table 2 illustrate applications that require high blocking voltage capability. In both circuits the switching transistor is subjected to voltages substantially higher than VCC after the device is completely off (see load line diagrams at IC = Ileakage 0 in Table 2). The blocking capability at this point depends on the base to emitter conditions and the device junction temperature. Since the highest device capability occurs when the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (.5 Volts) both at 25 C and 00 C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn on and turn off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn on and the pulsed forward bias SOA curves (Figure ) are the proper design limits. For inductive loads, high voltage and current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area (Figure 2) which represents voltage current conditions that can be sustained during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. () For detailed information on specific switching applications, see Motorola Application Notes AN 79, AN Motorola Bipolar Power Transistor Device Data

26 VOLTAGE REQUIREMENTS (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn on and within the reverse bias SOA curve during turn off are considered safe, with the following assumptions: () The device thermal limitations are not exceeded. (2) The turn on time does not exceed 0 µs (see standard pulsed forward SOA curves in Figure ). (3) The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling t, TIME (ns) K VCC = 25 V IC/IB = 5 TJ = 25 C tr capability and low saturation voltage. On this data sheet, these parameters have been specified at 8 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS RESISTIVE SWITCHING PERFORMANCE In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base emitter junction during turn off. The reverse biased switching characteristics for inductive loads are discussed in Figure and Table 3 and resistive loads in Figures 3 and 4. Usually the inductive load component will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table ) providing correlation between test procedures and actual use conditions. t, TIME (ns) 2K K ts VCC = 25 V IC/IB = 5 TJ = 25 C VBE(off) = 5 V tf IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure. Turn On Time Figure 2. Turn Off Time IC 90% VCEM 90% IC Vclamp tsv trv tfi tti IC VCE IB Vclamp 90% IB 0% VCEM tc 0% ICM 2% I C CURRENT 2 A/DIV VOLTAGE 50 V/DIV IC VCE TIME Figure 3. Inductive Switching Measurements TIME 20 ns/div Figure 4. Typical Inductive Switching Waveforms (at 300 V and 2 A with IB = 2.4 A and VBE(off) = 5 V) Motorola Bipolar Power Transistor Device Data 3 68

27 Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS A SERIES SWITCHING REGULATOR VCC VO Collector Current 24 A TC = 00 C 2 A TURN ON TURN OFF TURN ON (FORWARD BIAS) SOA ton 0 ms DUTY CYCLE 0% PD = 4000 W V TURN OFF (REVERSE BIAS) SOA.5 V VBE(off) 9.0 V DUTY CYCLE 0% IC VCE VCC TIME t VCC 400 V 700 V COLLECTOR VOLTAGE TIME t B RINGING CHOKE INVERTER VCC N VO Collector Current 24 A TC = 00 C 2 A TURN OFF TURN ON TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% PD = 4000 W 2 VCC 400 V 350 V TURN OFF (REVERSE BIAS) SOA TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% 700 V IC VCC + N(Vo) VCE ton VCC toff t LEAKAGE SPIKE VCC + N(Vo) COLLECTOR VOLTAGE t C PUSH PULL INVERTER/CONVERTER VCC VO Collector Current 24 A TC = 00 C 2 A TURN OFF TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% PD = 4000 W V TURN OFF (REVERSE BIAS) SOA TURN ON TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% 2 VCC IC VCE ton 2 VCC VCC toff t VCC 400 V 700 V COLLECTOR VOLTAGE t SOLENOID DRIVER 24 A TURN ON (FORWARD BIAS) SOA TURN ON ton 0 ms TURN ON DUTY CYCLE 0% IC D VCC SOLENOID Collector Current TC = 00 C 2 A TURN OFF TURN ON PD = 4000 W V TURN OFF (REVERSE BIAS) SOA TURN OFF.5 V VBE(off) 9.0 V TURN OFF DUTY CYCLE 0% VCC VCE ton toff t VCC 400 V 700 V COLLECTOR VOLTAGE t Motorola Bipolar Power Transistor Device Data

28 Table 3. Typical Inductive Switching Performance Î IC ÎÎ T AMP C tsv trv tfi tti tc C ns ns ns ns ns ÎÎÎ ÎÎ ÎÎ Î ÎÎ ÎÎÎ 2 ÎÎÎ NOTE: All Data recorded In the Inductive Switching Circuit In Table. SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB to 0% VCEM trv = Voltage Rise Time, 0 90% VCEM tfi = Current Fall Time, 90 0% ICM tti = Current Tail, 0 2% ICM tc = Crossover Time, 0% VCEM to 0% ICM An enlarged portion of the turn off waveforms is shown in Figure 3 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN 222: PSWT = /2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 4. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25 C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a SWITCHMODE transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 00 C. Motorola Bipolar Power Transistor Device Data 3 683

29 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 22A 06 TO 220AB ISSUE Y Motorola Bipolar Power Transistor Device Data

30 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 2092; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 35, Japan MFAX: RMFAX0@ .sps.mot.com TOUCHTONE (602) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJE3009/D 3 685

31 The MJE3009 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. They are particularly suited for 5 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: VCEO(sus) 400 V and 300 V Reverse Bias SOA with Inductive TC = 00C Inductive Switching Matrix 3 to 2 Amp, 25 and 00C 8 A, 00C is 20 ns (Typ). 700 V Blocking Capability SOA and Switching Applications Information. *ON Semiconductor Preferred Device 2 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 00 WATTS Î MAXIMUM RATINGS Î Rating ÎÎÎ Symbol Value Unit Î Collector Emitter Voltage ÎÎ VCEO(sus) 400 Vdc Î Collector Emitter Voltage ÎÎ VCEV 700 Vdc Î Emitter Base Voltage ÎÎ VEBO 9 Vdc Î Collector Current Continuous ÎÎ IC 2 Adc Î Peak () ÎÎÎ ICM 24 Î Base Current Continuous ÎÎÎ IB 6 Adc Peak () IBM 2 Î Emitter Current Continuous IE 8 Adc Î Peak () ÎÎ IEM 36 Î Total Power TA = 25C ÎÎ PD 2 Watts Î Derate above 25C ÎÎ 6 mw/c Î Total Power TC = 25C ÎÎÎ PD 00 Watts Derate above 25C 800 mw/c Î Operating and Storage Junction Temperature Range TJ, Tstg 65 to +50 C Î Î THERMAL CHARACTERISTICS Î Characteristic ÎÎÎ Symbol Max Unit Î Thermal Resistance, Junction to Ambient ÎÎÎ RθJA 62.5 C/W Î Thermal Resistance, Junction to Case ÎÎÎ RθJC.25 C/W Î Maximum Lead Temperature for Soldering Purposes: ÎÎÎ TL 275 C /8 from Case for 5 Seconds () Pulse Test: Pulse Width = 5 ms, Duty Cycle 0%. CASE 22A 09 TO 220AB Semiconductor Components Industries, LLC, 2002 April, 2002 Rev. 6 Publication Order Number: MJE3009/D

32 MJE3009 Î ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) ÎÎÎ Characteristic Î Symbol Min ÎÎÎ Typ Max ÎÎÎ Unit Î *OFF CHARACTERISTICS ÎÎÎ Collector Emitter Sustaining Voltage Î VCEO(sus) ÎÎÎ (IC = 0 ma, IB = 0) Î 400 ÎÎ ÎÎ ÎÎÎ ÎÎ Vdc ÎÎÎ Collector Cutoff Current Î ICEV ÎÎÎ madc (VCEV = Rated Value, VBE(off) =.5 Vdc) ÎÎÎ (VCEV = Rated Value, VBE(off) =.5 Vdc, TC = 00C) ÎÎÎ 5 ÎÎÎ ÎÎÎ Emitter Cutoff Current IEBO ÎÎÎ (VEB = 9 Vdc, IC = 0) Î ÎÎÎ ÎÎ ÎÎÎ madc ÎÎ Î SECOND BREAKDOWN ÎÎÎ Second Breakdown Collector Current with base forward biased Î IS/b ÎÎÎ See Figure Clamped Inductive SOA with Base Reverse Biased See Figure 2 Î *ON CHARACTERISTICS Î DC Current Gain hfe ÎÎÎ (IC = 5 Adc, VCE = 5 Vdc) 8 ÎÎ ÎÎÎ (IC = 8 Adc, VCE = 5 Vdc) 6 ÎÎÎ 40 ÎÎÎ 30 ÎÎÎ ÎÎÎ Collector Emitter Saturation Voltage Î VCE(sat) ÎÎÎ Vdc (IC = 5 Adc, IB = Adc) ÎÎÎ (IC = 8 Adc, IB =.6 Adc) ÎÎÎ.5 ÎÎÎ (IC = 2 Adc, IB = 3 Adc) ÎÎÎ 3 ÎÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00C) 2 Î Base Emitter Saturation Voltage VBE(sat) Vdc ÎÎÎ (IC = 5 Adc, IB = Adc) ÎÎÎ.2 ÎÎÎ (IC = 8 Adc, IB =.6 Adc) ÎÎÎ.6 ÎÎÎ (IC = 8 Adc, IB =.6 Adc, TC = 00C).5 Î Î DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ÎÎÎ ft 4 ÎÎ ÎÎ MHz (IC = 500 madc, VCE = 0 Vdc, f = MHz) ÎÎ Output Capacitance 80 pf ÎÎÎ (VCB = 0 Vdc, IE = 0, f = 0. MHz) ÎÎÎ Î SWITCHING CHARACTERISTICS Î Resistive Load (Table ) Delay Time td ÎÎÎ ÎÎÎ µs Rise Time (VCC = 25 Vdc, IC = 8 A, Î tr ÎÎÎ 0.45 ÎÎÎ µs IB =IB2 =6A.6 A, tp =25µs µs, Storage Time Duty Cycle %) Î ts ÎÎÎ.3 3 ÎÎÎ µs Fall Time tf ÎÎÎ ÎÎÎ µs Î Inductive Load, Clamped (Table, Figure 3) Voltage Storage Time = Vclamp = Î tsv ÎÎÎ ÎÎÎ µs (IC 8 A, 300 Vdc, Crossover Time *Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. Cob IB =.6 A, VBE(off) = 5 Vdc, TC = 00C) Î tc ÎÎÎ ÎÎÎ µs 2

33 MJE3009 µ µ Figure. Forward Bias Safe Operating Area Figure 2. Reverse Bias Switching Safe Operating Area The Safe Operating Area figures shown in Figures and 2 are specified ratings for these devices under the test conditions shown. Figure 3. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 0% but must be derated when TC 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure may be found at any case temperature by using the appropriate curve on Figure 3. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Use of reverse biased safe operating area data (Figure 2) is discussed in the applications information section. 3 θθ θ θ Figure 4. Typical Thermal Response [ZθJC(t)]

34 MJE3009 Figure 5. DC Current Gain Figure 6. Collector Saturation Region Figure 7. Base Emitter Saturation Voltage Figure 8. Collector Emitter Saturation Voltage µ Figure 9. Collector Cutoff Region Figure 0. Capacitance 4

35 MJE3009 Table. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING TEST CIRCUITS µ µ NOTE PW and V CC Adjusted for Desired I C R B Adjusted for Desired I B CIRCUIT VALUES Coil Data: Ferroxcube Core #6656 Full Bobbin (~6 Turns) #6 GAP for 200 µh/20 A Lcoil = 200 µh VCC = 20 V Vclamp = 300 Vdc Ω Ω TEST WAVEFORMS OUTPUT WAVEFORMS Test Equipment Scope Tektronics 475 or Equivalent µ tr, tf < 0 ns Duty Cycle =.0% RB and RC adjusted for desired IB and IC 5

36 MJE3009 APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS INTRODUCTION The primary considerations when selecting a power transistor for SWITCHMODE applications are voltage and current ratings, switching speed, and energy handling capability. In this section, these specifications will be discussed and related to the circuit examples illustrated in Table 2.() VOLTAGE REQUIREMENTS Both blocking voltage and sustaining voltage are important in SWITCHMODE applications. Circuits B and C in Table 2 illustrate applications that require high blocking voltage capability. In both circuits the switching transistor is subjected to voltages substantially higher than VCC after the device is completely off (see load line diagrams at IC = Ileakage 0 in Table 2). The blocking capability at this point depends on the base to emitter conditions and the device junction temperature. Since the highest device capability occurs when the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (.5 Volts) both at 25 C and 00C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching applications occur during turn on and turn off. If the load contains a significant capacitive component, high current and voltage can exist simultaneously during turn on and the pulsed forward bias SOA curves (Figure ) are the proper design limits. For inductive loads, high voltage and current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area (Figure 2) which represents voltage current conditions that can be sustained during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. In the four application examples (Table 2) load lines are shown in relation to the pulsed forward and reverse biased SOA curves. In circuits A and D, inductive reactance is clamped by the diodes shown. In circuits B and C the voltage is clamped by the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the turn off load line within the Reverse Bias SOA curve. Load lines that fall within the pulsed forward biased SOA curve during turn on and within the reverse bias SOA curve during turn off are considered safe, with the following assumptions:. The device thermal limitations are not exceeded. 2. The turn on time does not exceed 0 µs (see standard pulsed forward SOA curves in Figure ). 3. The base drive conditions are within the specified limits shown on the Reverse Bias SOA curve (Figure 2). CURRENT REQUIREMENTS An efficient switching transistor must operate at the required current level with good fall time, high energy handling capability and low saturation voltage. On this data sheet, these parameters have been specified at 8 amperes which represents typical design conditions for these devices. The current drive requirements are usually dictated by the VCE(sat) specification because the maximum saturation voltage is specified at a forced gain condition which must be duplicated or exceeded in the application to control the saturation voltage. SWITCHING REQUIREMENTS In many switching applications, a major portion of the transistor power dissipation occurs during the fall time (tfi). For this reason considerable effort is usually devoted to reducing the fall time. The recommended way to accomplish this is to reverse bias the base emitter junction during turn off. The reverse biased switching characteristics for inductive loads are discussed in Figure and Table 3 and resistive loads in Figures 3 and 4. Usually the inductive load component will be the dominant factor in SWITCHMODE applications and the inductive switching data will more closely represent the device performance in actual application. The inductive switching characteristics are derived from the same circuit used to specify the reverse biased SOA curves, (See Table ) providing correlation between test procedures and actual use conditions. () For detailed information on specific switching applications, see ON Semiconductor Application Notes AN 79, AN

37 MJE3009 RESISTIVE SWITCHING PERFORMANCE Figure. Turn On Time Figure 2. Turn Off Time Figure 3. Inductive Switching Measurements Figure 4. Typical Inductive Switching Waveforms (at 300 V and 2 A with IB = 2.4 A and VBE(off) = 5 V) 7

38 MJE3009 Table 2. Applications Examples of Switching Circuits CIRCUIT LOAD LINE DIAGRAMS TIME DIAGRAMS SERIES SWITCHING REGULATOR A Collector Current B RINGING CHOKE INVERTER Collector Current C PUSH PULL INVERTER/CONVERTER Collector Current SOLENOID DRIVER D Collector Current 8

39 MJE3009 Table 3. Typical Inductive Switching Performance ÎÎÎ IC ÎÎÎ AMP ÎÎ T C tsv trv tfi tti tc C ns ns ns ns ns ÎÎÎ 3 ÎÎÎ ÎÎÎ ÎÎ 5 ÎÎ ÎÎÎ 8 ÎÎ ÎÎ ÎÎÎ 2 ÎÎÎ NOTE: All Data recorded In the Inductive Switching Circuit In Table. SWITCHING TIME NOTES In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB to 0% VCEM trv = Voltage Rise Time, 0 90% VCEM tfi = Current Fall Time, 90 0% ICM tti = Current Tail, 0 2% ICM tc = Crossover Time, 0% VCEM to 0% ICM An enlarged portion of the turn off waveforms is shown in Figure 3 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN 222: PSWT = /2 VCCIC(tc) f Typical inductive switching waveforms are shown in Figure 4. In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a SWITCHMODE transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 00C. 9

40 MJE3009 PACKAGE DIMENSIONS TO 220AB CASE 22A 09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T 0

41 MJE3009 Notes

42 MJE3009 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada 2 JAPAN: ON Semiconductor, Japan Customer Focus Center 4 32 Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r4525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. MJE3009/D

43 MJE3009F MJE3009F High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220F.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V I C Collector Current (DC) 2 A I CP Collector Current (Pulse) 24 A I B Base Current 6 A P C Collector Dissipation (T C =25 C) 50 W T J Junction Temperature 50 C T STG Storage Temperature -65 ~ 50 C Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage I C = 0mA, I B = V I EBO Emitter Cut-off Current V EB = 7V, I C = 0 ma h FE DC Current Gain V CE = 5V, I C = 5A V CE = 5V, I C = 8A V CE (sat) Collector-Emitter Saturation Voltage I C = 5A, I B = A I C = 8A, I B =.6A I C = 2A, I B = 3A V BE (sat) Base-Emitter Saturation Voltage I C = 5A, I B = A I C = 8A, I B =.6A C ob Output Capacitance V CB = 0V, f = 0.MHz 80 pf f T Current Gain Bandwidth Product V CE = 0V, I C = 0.5A 4 MHz t ON Turn ON Time V CC =25V, I C = 8A. µs t STG Storage Time I B = - I B2 =.6A 3 µs t F Fall Time R L = 5,6Ω 0.7 µs * Pulse Test: PW 300µs, Duty Cycle 2% V V V V V 200 Fairchild Semiconductor Corporation Rev. A, February 200

44 Typical Characteristics hfe, DC CURRENT GAIN IC[A], COLLECTOR CURRENT VCE = 5V V BE (sat), V CE (sat)[v], SATURATION VOLTAGE 0 0. V BE (sat) V CE (sat) I C [A], COLLECTOR CURRENT I C = 3 I B MJE3009F Figure. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage V CC =25V I C =5I B C ob [pf], CAPACITANCE 00 0 t R, t D [µs], TURN ON TIME t R t D, V BE (off)=5v V CB [V], COLLECTOR-BASE VOLTAGE I C [A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time t STG, t F [µs], TURN OFF TIME 000 t STG V CC =25V I C =5I B I C [A], COLLECTOR CURRENT 0 0. DC ms 00µs t F I C [A], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE 200 Fairchild Semiconductor Corporation Figure 5. Turn Off Time Figure 6. Safe Operating Area Rev. A, February 200

45 Typical Characteristics (Continued) MJE3009F P C [W], POWER DISSIPATION Tc[ o C], CASE TEMPERATURE Figure. DC current Gain 200 Fairchild Semiconductor Corporation Rev. A, February 200

46 Package Demensions TO-220F MJE3009F 3.30 ± ±0.20 ø3.8 ± ±0.20 (7.00) (0.70) 5.80 ± ±0.20 (.00x45 ) 5.87 ± ±0.30 MAX ±0.0 (30 ) 0.35 ±0.0 # ± TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ± ±0.20 Dimensions in Millimeters 200 Fairchild Semiconductor Corporation Rev. A, February 200

47 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS EnSigna FACT FACT Quiet Series FAST FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series LILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic VCX UHC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. 200 Fairchild Semiconductor Corporation Rev. G

48 Shenzhen SI Semiconductors Co., LTD. MJE LOW VOLTAGE SERIES TRANSISTORS Product Specification MJE3009L FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: SUITABLE FOR 0V CIRCUIT MODE FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY Absolute Maximum Ratings Tc=25 C TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 400 V Collector-Emitter Voltage V CEO 200 V Emitter- Base Voltage V EBO 9 V Collector Current I C 20 A Total Power Dissipation P C 80 W Junction Temperature Tj 50 C Storage Temperature Tstg C Electronic Characteristics Tc=25 C CHARACTERISTICS SYMBOL TEST CONDITION MIN MAX UNIT Collector-Base Cutoff Current I CBO V CB =400V 00 A Collector-Emitter Cutoff Current I CEO V CE =200V,I B =0 250 A Collector-Emitter Voltage V CEO I C =0mA,I B =0 200 V Emitter -Base Voltage V EBO I E =ma,i C =0 9 V I C =2.0A,I B =0.4A 0.5 Collector-Emitter Saturation Voltage Vces I C =8.0A,I B =.6A.0 V I C =2.0A,I B =3.0A 2.0 Base-Emitter Saturation Voltage Vbes I C =5.0A,I B =.0A.5 V DC Current Gain h FE V CE =5V,I C =0 ma 8 V CE =5V,I C =2.0 A 0 40 V CE =5V,I C =5.0 A 5 Si semiconductors