DPAK For Surface Mount Applications

Transcription

1 SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( Suffix) Lead Formed Version in 6 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP and TIP Series MAXIMUM RATINGS MJD MJD Rating Symbol MJD MJDÎÎÎ Unit ollector Emitter Voltage VEO 4 ollector Base Voltage VB 4 Emitter Base Voltage VEB ollector urrent ontinuous I ÎÎ Peak ÎÎÎ ÎÎ Adc Base urrent IB ÎÎÎ Adc ÎÎ Total Power T = PD ÎÎÎ Watts ÎÎ Derate above. W/ Total Power TA = PD ÎÎ.6 ÎÎÎ Watts Derate above. ÎÎ W/ Operating and Storage Junction TJ, Tstg 6 to + ÎÎÎ Temperature Range THERMAL HARATERISTIS haracteristic Symbol Max Unit Thermal Resistance, Junction to ase RθJ 8. /W ÎÎ Thermal Resistance, Junction to Ambient* ÎÎÎ RθJA 8 /W ÎÎ Lead Temperature for Soldering PurposesÎÎ TL 6 * These ratings are applicable when surface mounted on the minimum pad size recommended. *Motorola Preferred Device SILION POWER TRANSISTORS AMPERES 4 AND VOLTS WATTS ASE 69A ASE 69 7 MINIMUM PAD SIZES REOMMENDED FOR SURFAE MOUNTED APPLIATIONS inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV Motorola, Inc. 99 Motorola Bipolar Power Transistor Device Data

2 Î ELETRIAL HARATERISTIS (T = unless otherwise noted) Î haracteristic Î Symbol Min Max Unit Î OFF HARATERISTIS ollector Emitter Sustaining Voltage () Î VEO(sus) ÎÎÎ (I = madc, IB = ) MJD, MJD 4 MJD, MJD ollector utoff urrent IEO (VE = 4, IB = ) MJD, MJD (VE = 6, IB = ) MJD, MJD µadc ollector utoff urrent Î IES µadc ÎÎÎ (VE = Rated VEO, VEB = ) Emitter utoff urrent Î IEBO madc Î (VBE =, I = ) ON HARATERISTIS () Î D urrent Gain hfe ÎÎÎ (I = Adc, VE = 4 ) ÎÎÎ (I = Adc, VE = 4 ) ollector Emitter Saturation Voltage VE(sat). Î (I = Adc, IB = 7 madc) Base Emitter On Voltage Î VBE(on).8 ÎÎÎ Î (I = Adc, VE = 4 ) DYNAMI HARATERISTIS urrent Gain Bandwidth Product () Î ft MHz ÎÎÎ (I = madc, VE =, ftest = MHz) Small Signal urrent Gain Î hfe (I =. Adc, VE =, f = khz) () Pulse Test: Pulse Width µs, Duty ycle %. () ft = hfe ftest. Motorola Bipolar Power Transistor Device Data

3 PD, POWER DISSIPATION (WATTS) TA... T T TA (SURFAE MOUNT) 7 T, TEMPERATURE ( ) TYPIAL HARATERISTIS + V 9 V µs tr, tf ns DUTY YLE = % RB 4 V D V + V R SOPE RB and R VARIED TO OBTAIN DESIRED URRENT LEVELS D MUST BE FAST REOVERY TYPE, e.g.: N8 USED ABOVE IB ma MSD6 USED BELOW IB ma REVERSE ALL POLARITIES FOR PNP. Figure. Power Derating Figure. Switching Time Test ircuit hfe, D URRENT GAIN 7 7 TJ = VE = V t, TIME ( µ s) V = V V = V VBE(off) = V I/IB = TJ = Figure. D urrent Gain Figure 4. Turn On Time V, VOLTAGE (VOLTS) TJ = I/IB = VE = V I/IB = t, TIME ( µ s) V = V V = V ts IB = IB I/IB = ts = ts /8 tf TJ = Figure. On Voltages Figure 6. Turn Off Time Motorola Bipolar Power Transistor Device Data

4 VE, OLLETOR EMITTER VOLTAGE (VOLTS) I =. A TJ = A A IB, BASE URRENT (ma) APAITANE (pf) 7. TJ = + eb cb... 4 VR, REVERSE VOLTAGE (VOLTS) Figure 7. ollector Saturation Region Figure 8. apacitance r(t), TRANSIENT THERMAL RESISTANE (NORMALIZED) D =..... SINGLE PULSE RθJ(t) = r(t) RθJ RθJ = 8. /W MAX D URVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) T = P(pk) θj(t) t, TIME (ms) Figure 9. Thermal Response P(pk) t t DUTY YLE, D = t/t k dc ms WIRE BOND LIMIT THERMAL LIMIT SEOND BREAKDOWN LIMIT URVES APPLY BELOW RATED VEO T = SINGLE PULSE TJ = MJD, MJD MJD, MJD µs µs 7 7 VE, OLLETOR EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I VE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure is based on TJ(pk) = ; T is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided TJ(pk). TJ(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data

5 PAKAGE DIMENSIONS V S F B R 4 G L A K D PL J H. (.) M T T E SEATING PLANE U Z NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.M, 98.. ONTROLLING DIMENSION: INH. INHES MILLIMETERS DIM MIN MAX MIN MAX A B D E F G.8 BS 4.8 BS H J K L.9 BS.9 BS R S....7 U.. V Z.8. STYLE : PIN. BASE. OLLETOR. EMITTER 4. OLLETOR ASE 69A ISSUE W V B R E NOTES:. DIMENSIONING AND TOLERANING PER ANSI Y4.M, 98.. ONTROLLING DIMENSION: INH. T SEATING PLANE S F 4 G A K D PL. (.) M T J H INHES MILLIMETERS DIM MIN MAX MIN MAX A B D E F G.9 BS.9 BS H J K R S V STYLE : PIN. BASE. OLLETOR. EMITTER 4. OLLETOR ASE 69 7 ISSUE K Motorola Bipolar Power Transistor Device Data

6 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLD, Toshikatsu Otsuki, P.O. Box 9; Phoenix, Arizona F Seibu Butsuryu enter, 4 Tatsumi Koto Ku, Tokyo, Japan. 8 MFAX: RMFAX@ .sps.mot.com TOUHTONE (6) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data MJD/D

7 This datasheet has been download from: Datasheets for electronics components.