NSS35200CF8T1G. 35 V, 7 A, Low V CE(sat) PNP Transistor. 35 VOLTS 7.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m
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1 NSSF8T1G V, 7 A, Low V E(sat) PNP Transistor ON Semiconductor s e PowerEdge family of low V E(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V E(sat) ) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DD converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e PowerEdge devices to be driven directly from PMU s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features This is a PbFree Device MAXIMUM RATINGS (T A = ) Rating Symbol Max Unit ollector-emitter Voltage V EO Vdc ollector-base Voltage V BO Vdc Emitter-Base Voltage V EBO. Vdc ollector urrent ontinuous I. Adc ollector urrent Peak I M 7. A Electrostatic Discharge ESD HBM lass MM lass THERMAL HARATERISTIS haracteristic Symbol Max Unit Total Device Dissipation T A = Derate above P D (Note 1).1 mw mw/ Thermal Resistance, JunctiontoAmbient Total Device Dissipation T A = Derate above Thermal Resistance, JunctiontoAmbient R JA (Note 1) P D (Note ) R JA (Note ) /W W mw/ 9 /W Thermal Resistance, JunctiontoLead #1 R JL 1 /W Total Device Dissipation (Single Pulse < 1 sec) Junction and Storage Temperature Range P Dsingle (Notes & ) T J, T stg.7 W to +1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating onditions is not implied. Extended exposure to stresses above the Recommended Operating onditions may affect device reliability mm, 1 oz copper traces.. mm, 1 oz copper traces.. Thermal response. VOLTS 7. AMPS PNP LOW V E(sat) TRANSISTOR EQUIVALENT R DS(on) 78 m BASE PIN ONNETIONS E OLLETOR 1,,,, 7, 8 B EMITTER hipfet ASE 1A STYLE MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping NSSF8T1G G = Specific Device ode M = Month ode = PbFree Package For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 1 hipfet (PbFree) G M 8 7 / Tape & Reel Semiconductor omponents Industries, LL, March, Rev. 1 Publication Order Number: NSSF8T1G/D
2 NSSF8T1G ELETRIAL HARATERISTIS (T A = unless otherwise noted) haracteristic Symbol Min Typical Max Unit OFF HARATERISTIS ollector Emitter Breakdown Voltage (I = 1 madc, I B = ) ollector Base Breakdown Voltage (I =.1 madc, I E = ) Emitter Base Breakdown Voltage (I E =.1 madc, I = ) ollector utoff urrent (V B = Vdc, I E = ) ollectoremitter utoff urrent (V ES = Vdc) Emitter utoff urrent (V EB =. Vdc) ON HARATERISTIS D urrent Gain (Note ) (I = 1. A, V E =. V) (I = 1. A, V E =. V) (I =. A, V E =. V) ollector Emitter Saturation Voltage (Note ) (I =.1 A, I B =.1 A) (I = 1. A, I B =.1 A) (I =. A, I B =. A) Base Emitter Saturation Voltage (Note ) (I = 1. A, I B =.1 A) Base Emitter Turnon Voltage (Note ) (I =. A, V E =. V) utoff Frequency (I = 1 ma, V E =. V, f = 1 MHz) V (BR)EO V (BR)BO V (BR)EBO. 7. I BO..1 I ES..1 I EBO.1.1 h FE V E(sat).1.1. V BE(sat).8.8 V BE(on) f T 1 Vdc Vdc Vdc Adc Adc Adc V V V MHz Input apacitance (V EB =. V, f = 1. MHz) ibo pf Output apacitance (V B =. V, f = 1. MHz) obo 8 1 pf Turnon Time (V = 1 V, I B1 = 1 ma, I = 1 A, R L = ) t on ns Turnoff Time (V = 1 V, I B1 = I B = 1 ma, I = 1 A, R L = ) t off ns. Pulsed ondition: Pulse Width = sec, Duty ycle %
3 NSSF8T1G V E(sat), OLLETOR EMITTER SATURATION VOLTAGE (VOLTS) I /I B = 1 1 V E(sat), OLLETOR EMITTER SATURATION VOLTAGE (VOLTS) I /I B = I, OLLETOR URRENT (A) I, OLLETOR URRENT (A) 1 Figure 1. ollector Emitter Saturation Voltage versus ollector urrent Figure. ollector Emitter Saturation Voltage versus ollector urrent, D URRENT GAIN FE h ( V) 1 ( V) ( V) ( V) ( V) ( V) V BE(sat), BASE EMITTER SATURATION VOLTAGE (VOLTS) I, OLLETOR URRENT (A) I, OLLETOR URRENT (A) Figure. D urrent Gain versus ollector urrent Figure. Base Emitter Saturation Voltage versus ollector urrent V BE(on), BASE EMITTER TURNON VOLTAGE (VOLTS) ibo, INPUT APAITANE (pf) I, OLLETOR URRENT (A) V EB, EMITTER BASE VOLTAGE (V) Figure. Base Emitter TurnOn Voltage versus ollector urrent Figure. Input apacitance
4 NSSF8T1G obo, OUTPUT APAITANE (pf) V B, OLLETOR BASE VOLTAGE (V) Figure 7. Output apacitance I, (A) 1 1 ms 1 s 1 ms 1. 1 ms Thermal Limits V E, (Vdc) Figure 8. Safe Operating Area R (t), TRANSIENT THERMAL RESISTANE D =. D =. D =.1 Single Pulse D =. D =.1 t 1, TIME (Sec) Figure 9. Normalized Thermal Response P(pk) t 1 t Duty ycle = D = t 1 /t J = 17 /W
5 NSSF8T1G PAKAGE DIMENSIONS hipfet ASE 1A ISSUE PRELIMINARY S A B M K NOTES: 1. DIMENSIONING AND TOLERANING PER ANSI Y1.M, ONTROLLING DIMENSION: MILLIMETER.. MOLD GATE BURRS SHALL NOT EXEED.1 MM PER SIDE.. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTIAL SHALL NOT EXEED.8 MM.. DIMENSIONS A AND B EXLUSIVE OF MOLD GATE BURRS.. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFAE. L G D J. (.) STYLE : PIN 1. OLLETOR. OLLETOR. OLLETOR. BASE. EMITTER. OLLETOR 7. OLLETOR 8. OLLETOR MILLIMETERS INHES DIM MIN MAX MIN MAX A B D G. BS. BS J K L. BS. BS M NOM NOM S SOLDERING FOOTPRINT* SALE :1 mm inches SALE :1 mm inches Basic Style *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
6 NSSF8T1G hipfet is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 11, Phoenix, Arizona 8811 USA Phone: or 88 Toll Free USA/anada Fax: or 887 Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: 8898 Toll Free USA/anada Japan: ON Semiconductor, Japan ustomer Focus enter 91 Kamimeguro, Meguroku, Tokyo, Japan 11 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NSSF8T1G/D
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NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
NSVT65011MW6T1G. Dual Matched General Purpose Transistor. NPN Matched Pair
ual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultrasmall SOT363 package ideally suited for portable products. They are assembled to create a pair of devices
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications
MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed
MUN5316DW1, NSBC143TPDXV6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN and PNP Transistors with Monolithic Bias Resistor Network
MUN3W, NSB3TPXV omplementary Bias Resistor Transistors R =.7 k, R2 = k NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
NTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223
NTF955 Power MOSFET V,. A, Single P Channel SOT Features TMOS7 Design for low R DS(on) Withstands High Energy in Avalanche and Commutation Modes Pb Free Package is Available Applications Power Supplies
MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors R1 = 10 k, R2 = 47 k
MUN524W, NSB4YXV6, NSB4YP6 ual NPN Bias Resistor Transistors R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W
N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
MC GHz Low Power Prescaler With Stand-By Mode
2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized
MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors
MMUNLTG, SMMUNLTG, NSVMMUNLTG Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace
MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals
BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications.
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features
BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications