2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier

Transcription

1 2N396 / MMBT396 / PZT396 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of ma to ma. EB Ordering Information 2N396 MMBT396 PZT396 TO-92 SOT-23 B SOT-223 Mark:2A E B E Part Number Marking Package Packing Method Pack Quantity 2N396BU 2N396 TO-92 3L Bulk 2N396TA 2N396 TO-92 3L Ammo 2 2N396TAR 2N396 TO-92 3L Ammo 2 2N396TF 2N396 TO-92 3L Tape and Reel 2 2N396TFR 2N396 TO-92 3L Tape and Reel 2 MMBT396 2A SOT-23 3L Tape and Reel 3 PZT SOT-223 4L Tape and Reel 25 2 Semiconductor omponents Industries, LL. October-27, Rev. 2 Publication Order Number: PZT396/D

2 Absolute Maximum Ratings () Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 unless otherwise noted. Symbol Parameter Value Unit V EO ollector-emitter Voltage -4 V V BO ollector-base Voltage -4 V V EBO Emitter-Base Voltage -5. V I ollector urrent - ontinuous -2 ma T J, T STG Operating and Storage Junction Temperature Range -55 to +5 Note:. These ratings are based on a maximum junction temperature of 5. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal haracteristics Values are at T A = 25 unless otherwise noted. Symbol Parameter Maximum 2N396 (3) MMBT396 (2) PZT396 (3) Total Device Dissipation , mw P D Derate Above mw/ R θj Thermal Resistance, Junction to ase 83.3 /W R θja Thermal Resistance, Junction to Ambient /W Unit Notes: 2. Device is mounted on FR-4 PB.6 inch X.6 inch X.6 inch. 3. PB size: FR-4, 76 mm x 4 mm x.57 mm (3. inch x 4.5 inch x.62 inch) with minimum land pattern size. 2

3 Electrical haracteristics Values are at T A = 25 unless otherwise noted. Symbol Parameter onditions Min. Max. Unit OFF HARATERISTIS V (BR)EO ollector-emitter Breakdown Voltage (4) I = -. ma, I B = -4 V V (BR)BO ollector-base Breakdown Voltage I = - μa, I E = -4 V V (BR)EBO Emitter-Base Breakdown Voltage I E = - μa, I = -5. V I BL Base ut-off urrent V E = -3 V, V BE = 3. V -5 na I EX ollector ut-off urrent V E = -3 V, V BE = 3. V -5 na ON HARATERISTIS I = -. ma, V E = -. V 6 I = -. ma, V E = -. V 8 h FE D urrent Gain (4) I = - ma, V E = -. V 3 I = -5 ma, V E = -. V 6 I = - ma, V E = -.V 3 V E (sat) ollector-emitter Saturation I = - ma, I B = -. ma -.25 Voltage I = -5 ma, I B = -5. ma -.4 V V BE (sat) Base-Emitter Saturation Voltage I = - ma, I B = -. ma I = -5 ma, I B = -5. ma -.95 V SMALL SIGNAL HARATERISTIS I f T urrent Gain - Bandwidth Product = - ma, V E = -2 V, f = MHz 25 MHz V obo Output apacitance B = -5. V, I E =, f = khz 4.5 pf V ibo Input apacitance EB = -.5 V, I =, f = khz. pf I = - μa, V E = -5. V, NF Noise Figure R S =. kω, f = Hz to 5.7 khz 4. db SWITHING HARATERISTIS t d Delay Time V = -3. V, V BE = -.5 V 35 ns t r Rise Time I = - ma, I B = -. ma 35 ns t s Storage Time V = -3. V, I = - ma, 225 ns t f Fall Time I B = I B2 = -. ma 75 ns Note: 4. Pulse test: pulse width 3 μs, duty cycle 2.%. 3

4 Typical Performance haracteristics h - TYPIAL PULSED URRENT GAIN FE I - OLLETOR URRENT (ma) V =.V E Figure. Typical Pulsed urrent Gain vs. ollector urrent V - BASE EMITTER VOLTAGE (V) BESAT β = 2 I - OLLETOR URRENT (ma) V - OLLETOR EMITTER VOLTAGE (V) ESAT β = 2 I - OLLETOR URRENT (ma) Figure 2. ollector-emitter Saturation Voltage vs. ollector urrent V - BASE EMITTER ON VOLTAGE (V) BE( ON) I - OLLETOR URRENT (ma) V E = V Figure 3. Base-Emitter Saturation Voltage vs. ollector urrent Figure 4. Base-Emitter On Voltage vs. ollector urrent I - OLLETOR URRENT (na) BO. V = 25V B T A - AMBIENT TEMPERATURE ( ) Figure 5. ollector ut-off urrent vs. Ambient Temperature APAITANE (pf) obo ibo. REVERSE BIAS VOLTAGE (V) Figure 6. ommon-base Open ircuit Input and Output apacitance vs. Reverse Bias Voltage 4

5 Typical Performance haracteristics (ontinued) NF - NOISE FIGURE (db) TIME (ns) V = 5.V E I = μa, R S = 2Ω I =. ma, R = 2Ω S I = μa, R = 2. kω S. f - FREQUENY (khz) 5 Figure 7. Noise Figure vs. Frequency I c I B= I B2= I - OLLETOR URRENT (ma) Figure 9. Switching Times vs. ollector urrent t s t f t r t d NF - NOISE FIGURE (db) TIME (ns) I =. ma V E = 5.V f =. khz I = μa. R S - SOURE RESISTANE ( kω ) Figure 8. Noise Figure vs. Source Resistance 5 I c t on I B = V =.5V BE(OFF) I c t off I B= I B2= t off t on I - OLLETOR URRENT (ma) Figure. Turn-On and Turn-Off Times vs. ollector urrent P - POWER DISSIPATION (W) D TO-92 SOT-23 SOT o TEMPERATURE ( ) Figure. Power Dissipation vs. Ambient Temperature 5

6 μ Ω Typical Performance haracteristics (ontinued) h - VOLTAGE FEEDBAK RATIO (x ) _ 4 re h - OUTPUT ADMITTANE ( mhos) oe. I - OLLETOR URRENT (ma) Figure 2. Voltage Feedback Ratio. I - OLLETOR URRENT (ma) Figure 4. Output Admittance V E = V f =. khz h - INPUT IMPEDANE (k ) ie h - URRENT GAIN fe.. I - OLLETOR URRENT (ma) Figure 3. Input Impedance Figure 5. urrent Gain V E = V f =. khz V E = V f =. khz. I - OLLETOR URRENT (ma) 6

7 Physical Dimensions TO-92 (Bulk) D Figure 6. 3-LEAD, TO92, JEDE TO-92 OMPLIANT STRAIGHT LEAD ONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 7

8 Physical Dimensions (ontinued) TO-92 (Ammo, Tape and Reel) Figure 7. 3-LEAD, TO92, MOLDED.2 IN LINE SPAING LEAD FORM (J6Z OPTION) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 8

9 Physical Dimensions (ontinued) (.29).2 MAX (.93) GAGE PLANE MIN 2.92± (.55) SOT A B.25 SEATING PLANE SEE DETAIL A LAND PATTERN REOMMENDATION 2.4±.3 NOTES: UNLESS OTHERWISE SPEIFIED 2.2. A) REFERENE JEDE REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. ) DIMENSIONS ARE INLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANING PER ASME Y4.5M E) DRAWING FILE NAME: MA3DREV SALE: 2X Figure 8. 3-LEAD, SOT23, JEDE TO-236, LOW PROFILE Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 9

10 Physical Dimensions (ontinued) SOT-223 4L Figure 9. MOLDED PAKAGE, SOT-223, 4-LEAD Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products.

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