MC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA
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1 Micropower Undervoltage Sensing ircuits The M33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended battery life is required. A choice of several threshold voltages from.9 to 4. are available. These devices feature a very low quiescent bias current of.8 μa typical. The M33464 series features a highly accurate voltage reference, a comparator with precise thresholds and built in hysteresis to prevent erratic reset operation, a choice of output configurations between open drain or complementary MOS, and guaranteed operation below. with extremely low standby current. These devices are available in either SOT 89 3 pin or SOT 23 pin surface mount packages. Applications include direct monitoring of the MPU/logic power supply used in portable, appliance, automotive and industrial equipment. Extremely Low Standby urrent of.8 μa at in =. Wide Input oltage Range (.7 to ) Monitors Power Supply oltages from. to. High Accuracy Detector Threshold (±2.%) Two Output Types (Open Drain or omplementary Drive) Two Surface Mount Packages (SOT 89 or SOT 23 Pin) Device ORDERING INFORMATION Threshold oltage Type Marking M33464H 9AT.9 T9A M33464H 2AT M33464H 27AT M33464H 3AT 2.7 Open Drain T2A T27A T3A M33464H 4AT 4. T4A M33464H 9T.9 T9 M33464H 2T T2 ompl. M33464H 27T 2.7 T27 MOS M33464H 3T T3 M33464H 43T 4.3 T43 M33464H 4T 4. T4 Other voltages from.9 to 6., in. increments, are available. onsult factory for information. Package (Qty/Reel) SOT 89 () MIROPOWER UNDEROLTAGE SENSING IRUITS SEMIONDUTOR TEHNIAL DATA Input Ground TAB H SUFFIX PLASTI PAKAGE ASE 23 (SOT 89) 2 3 (Top iew) Tab N SUFFIX PLASTI PAKAGE ASE 22 (SOT 23 ) (Tab is connected to Pin 2) Input 2 N/ Ground 3 4 N/ (Top iew) Semiconductor omponents Industries, LL, 26 July, 26 Rev. 3 Publication Order Number: M33464/D
2 Device ORDERING INFORMATION Threshold oltage Type Marking M33464N 9ATR.9 9N M33464N 2ATR R M33464N 2ATR M33464N 27ATR M33464N 3ATR Open Drain R 7R S M33464N 4ATR 4. T M33464N 48ATR 4.8 8T M33464N 9TR.9 9F M33464N 2TR ompl. J M33464N 27TR 2.7 MOS 7J M33464N 3TR K M33464N 4TR 4. L Other voltages from.9 to 6., in. increments, are available. onsult factory for information. Package (Qty/Reel) SOT 23 (3) Representative Block Diagrams M33464X YYATZ Open Drain onfiguration M33464X YYTZ omplementary Drive onfiguration X Denotes Package Type YY Denotes Threshold oltage TZ Denotes Taping Type This device contains 2 active transistors. MAXIMUM RATINGS (T = 2, unless otherwise noted.) Rating Symbol alue Unit Power Input Supply oltage in to ÁÁÁ Output oltage O.3 to ÁÁÁ Output urrent (Source or Sink) I O 7 ÁÁÁ ma Power Dissipation and Thermal haracteristics Maximum Power Dissipation ase 22 (SOT 23) N Suffix P D mw Thermal Resistance, Junction to Ambient R θja 667 /W Maximum Power Dissipation ase 23 (SOT 89) H suffix P D 3 mw Thermal Resistance, Junction to Ambient R θja 333 /W Operating Junction Temperature T J +2 ÁÁÁ Operating Ambient Temperature T A 4 to +8ÁÁÁ Storage Temperature Range T stg 4 to +2ÁÁÁ Lead Temperature (Soldering) T solder 26, sááá 2
3 ELETRIAL HARATERISTIS (For all values (Note ), unless otherwise noted.) haracteristic Symbol Min Typ Max Unit OMPARATOR Threshold oltage High State Output ( in Decreasing) IH 9 Suffix Suffix.9 2 Suffix Suffix Suffix Suffix Suffix Suffix Á Threshold Hysteresis H 9 Suffix Suffix Suffix Suffix Suffix Suffix Suffix Suffix Threshold oltage Temperature oefficient T ± PPM/ RESET OUTPUT Output oltage High State (omplementary Output: I source =. ma) OH in 2. in. in Low State (omplementary or Open Drain: I sink =. ma) OL.2. Output Sink urrent ( in =., OL =. ) Output Source urrent ( in = 4., OL = 2.4 ) TOTAL DEIE Operating Input oltage Range ÁÁÁ ÁÁ I OL. ÁÁÁ ma I OH. ÁÁÁ ma in.7 to Quiescent Input urrent I in μa in = in = Propagation Delay Time (Note 2) Á t p ÁÁÁ μs NOTES:. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 2. Propagation delay time is measured from the rising or falling edge of the input voltage to the point where the output voltage has transitioned to % of its final value. 3
4 O, OUTPUT OLTAGE () I in, QUIESENT BIAS URRENT ( μ A), OUTPUT DELAY TIME (ms) t p Figure. Quiescent urrent versus Input oltage. M33464H 4T in, INPUT OLTAGE () in, THRESHOLD OLTAGE () in, INPUT OLTAGE () Figure 3. Output oltage versus Input oltage M33464H 4ATR R L = 47 k to in. Figure. Output Delay Time versus Load apacitance.. LOAD APAITANE (μf) T A = 8 T A = 3. M33464H 4ATR R L = 47 k to in in Increasing in Decreasing 4... I O, OUTPUT URRENT (ma) I OL, OUTPUT SINK URRENT (ma) Figure 2. Detector Threshold versus Temperatur 4.8 M33464H 4T Upper Threshold in Increasing T A, AMBIENT TEMPERATURE ( ) Figure 4. Output oltage versus Sink urrent M33464H 4T OL, OUTPUT SINK OLTAGE () Figure 6. Output Sink urrent versus Input oltage.. M33464H 4T Hysteresis oltage in =. T A = 3 T A = 8 in = 4. in = 2. in, INPUT OLTAGE () in = Lower Threshold in Decreasing in = in =
5 Figure 7. Microprocessor ircuit with Delay 47 k Microprocessor in Delay A time delayed reset can be accomplished with the addition of Delay. Figure provides a graph of time delays, for both rising and falling output waveform edges, as a function of Delay. If another value of pullup resistance is used, the time delay can be calculated by using the equation: t Delay R Delay th(mpu) in t p where th MPU is the microprocessor reset input threshold voltage and t p is the propagation delay internal to the M Figure 8. Microprocessor ircuit in Microprocessor
6 OUTLINE DIMENSIONS H SUFFIX PLASTI PAKAGE ASE 23 (SOT 89) ISSUE O A D D B A2 NOTES:. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANING PER ASME Y4.M, DATUM IS A SEATING PLANE. E L e e B E. M B S B 2X. M B S A S A S MILLIMETERS DIM MIN MAX A2.4.6 B.37.7 B D D..7 E 4.2 E e. BS e BS L.8 E A L D e e B E B X. M B S A N SUFFIX PLASTI PAKAGE ASE 22 (SOT 23 ) ISSUE O S A2. S A L NOTES:. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANES PER ASME Y4.M, DATUM IS A SEATING PLANE. MILLIMETERS DIM MIN MAX A.. A2..3 B D 2.8 E 2. E..8 e.9 BS e.9 BS L L Recommended Footprint for Surface Mount Applications.7 MAX (Unit: mm) (Unit: mm) SOT 89 SOT 23 6
7 ON Semiconductor and are registered trademarks of Semiconductor omponents Industries, LL (SILL). SILL reserves the right to make changes without further notice to any products herein. SILL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SILL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SILL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SILL does not convey any license under its patent rights nor the rights of others. SILL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SILL product could create a situation where personal injury or death may occur. Should Buyer purchase or use SILL products for any such unintended or unauthorized application, Buyer shall indemnify and hold SILL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SILL was negligent regarding the design or manufacture of the part. SILL is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLIATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution enter for ON Semiconductor P.O. Box 63, Denver, olorado 827 USA Phone: or Toll Free USA/anada Fax: or Toll Free USA/anada orderlit@onsemi.com N. American Technical Support: Toll Free USA/anada Europe, Middle East and Africa Technical Support: Phone: Japan ustomer Focus enter Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative M33464/D
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MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
Characteristic Symbol Max Unit P D 625 mw
Advance Information Integrated Relay/Solenoid Driver Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 625 mw at 3 V to 5 V Features Low
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
General Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NCP A Low Dropout Linear Regulator
1.5 A Low Dropout Linear Regulator The NCP566 low dropout linear regulator will provide 1.5 A at a fixed output voltage. The fast loop response and low dropout voltage make this regulator ideal for applications
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88
NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic
ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit
5V μp Power Supply Monitor and Reset Circuit General Description The ASM1232LP/LPS is a fully integrated microprocessor Supervisor. It can halt and restart a hung-up microprocessor, restart a microprocessor
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
SA5.0A Series 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
5 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors Unidirectional The SA5.A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications