NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
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1 Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input drivers while the TT compatible outputs offer improved switching noise performance. Features Extremely High Speed: t PD ns (typical) at = 5. Designed for to Operation Overvoltage Tolerant Inputs TT Compatible Interface Capability with 5. TT ogic with = ( 3.3) CMOS Compatible 4 ma Balanced Output Sink and Source Capability at = Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 7; Equivalent Gate = 8 Pb Free Package is Available IN A 6 OUT Y SC 88/SOT 363/SC 7 DF SUFFIX CASE 49B MARKING DIAGRAM MX M Pin MX = Specific Device Code M = Date Code* = Pb Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. 5 ORDERING INFORMATION IN A 3 4 OUT Y Device Package Shipping N7WZ7DFT SC 88 3/Tape & Reel Figure. Pinout (Top iew) N7WZ7DFTG SC 88 (Pb Free) 3/Tape & Reel IN A IN A OUT Y OUT Y For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Figure. ogic Symbol PIN ASSIGNMENT IN A 3 IN A 4 OUT Y 5 FUNCTION TABE A Input Y Output H H 6 OUT Y Semiconductor Components Industries, C, 8 April, 8 Rev. 6 Publication Order Number: N7WZ7/D
2 MAXIMUM RATINGS Symbol Characteristics alue Unit DC Supply oltage to 7. I DC Input oltage I 7. O DC Output oltage Output in Z or OW State (Note ) O 7. I IK DC Input Diode Current I < 5 ma I OK DC Output Diode Current O < 5 ma I O DC Output Sink Current 5 ma I CC DC Supply Current per Supply Pin ma I DC Ground Current per Ground Pin ma T STG Storage Temperature Range 65 to 5 C P D Power Dissipation in Still Air mw JA Thermal Resistance 333 C/W T ead Temperature, mm from case for s 6 C T J Junction Temperature under Bias 5 C ESD ESD Withstand oltage Human Body Model (Note ) Machine Model (Note 3) Charged Device Model (Note 4) I atch Up > 5 N/A atch Up Performance Above and Below at 85 C (Note 5) 5 ma Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. I O absolute maximum rating must be observed.. Tested to EIA/JESD A4 A 3. Tested to EIA/JESD A5 A 4. Tested to JESD C A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit Supply oltage Operating Data Retention Only I Input oltage O Output oltage (High or OW State) T A Operating Free Air Temperature C t/ Input Transition Rise or Fall Rate =.5. = = 5. ns/
3 DC EECTRICA CHARACTERISTICS Symbol Parameter Condition () T A = 5 C 55 C T A 5 C Min Typ Max Min Max Unit T Positive Input Threshold oltage T Negative Input Threshold oltage H Input Hysteresis oltage OH O High evel Output oltage IN = IH or I ow evel Output oltage IN = IH or I I OH = A I OH = ma I OH = 8. ma I OH = ma I OH = 6 ma I OH = 4 ma I OH = 3 ma I O = A I O = 4. ma I O = 8. ma I O = ma I O = 6 ma I O = 4 ma I O = 3 ma I IN Input eakage Current IN = or to A I OFF Power Off Output eakage Current OUT = A I CC Quiescent Supply Current IN = or A AC EECTRICA CHARACTERISTICS (Input t r = t f = ns) Symbol Parameter Condition t PH t PH Propagation Delay Input A to Y () R = M C = 5 pf R = 5 C = 5 pf T A = 5 C 55 C T A 5 C Min Typ Max Min Max Unit ns CAPACITIE CHARACTERISTICS Symbol Parameter Condition Typical Unit C IN Input Capacitance =, I = or 7. pf C PD Power Dissipation Capacitance MHz, = 3.3, I = or MHz, =, I = or 9. pf 3
4 A or B 5% INPUT R C OUTPUT t PH t PH Y 5% Figure 3. Switching Waveforms A MHz square input wave is recommended for propagation delay tests. Figure 4. Test Circuit T, TYPICA INPUT THRESHOD OTAGE (OTS) 4 3 ( T ) H typ ( T ) , POWER SUPPY OTAGE (OTS) H typ = ( T typ) ( T typ) Figure 5. Typical Input Threshold, T, T versus Power Supply oltage in H T T in H T T OH OH out out O O (a) A Schmitt Trigger Squares Up Inputs With Slow Rise and Fall Times (b) A Schmitt Trigger Offers Maximum Noise Immunity Figure 6. Typical Schmitt Trigger Applications 4
5 PACKAGE DIMENSIONS H E D e E b 6 P. (.8) M E M SC 88/SOT 363/SC7 6 DF SUFFIX CASE 49B ISSUE W A3 NOTES:. DIMENSIONING AND TOERANCING PER ANSI YM, 98.. CONTROING DIMENSION: INCH B OBSOETE, NEW STANDARD 49B. MIIMETERS DIM MIN NOM MAX A.95. A..5 A3 b. C 4.5 D.8 E 5.35 e 5 BSC. H E. INCHES MIN NOM MAX REF.8 REF BSC A C A SODERING FOOTPRINT* SCAE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INFORMATION ITERATURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 87 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan 53 5 Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative. N7WZ7/D
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NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
MM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break
NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MC100EPT V LVTTL/LVCMOS to LVPECL Translator
MCEPT622 3.3V VTT/VCMOS to VPEC Translator Description The MCEPT622 is a 0 Bit VTT/VCMOS to VPEC translator. Because VPEC (Positive EC) levels are used only +3.3 V and ground are required. The device has
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
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NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
MMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage