MC10H645. 1:9 TTL Clock Driver
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1 MC :9 TT Clock Driver Description The MC10645 is a single supply, low skew, TT I/O 1:9 Clock Driver. Devices in the 600 clock driver family utilizes the PCC 28 for optimal power and signal pin placement. The device features a 24 ma TT output stage with AC performance specified into a 50 pf load capacitance. A 2:1 input Mux is provided on chip to allow for distributing both system and diagnostic clock signals or designing clock redundancy into a system. With the SE input held OW the DO input will be selected, while the input is selected when the SE input is forced IG. Features ow Skew Typically 0.65 Within Device Guaranteed Skew Spec 1.25 Part to Part Input Clock Muxing Differential EC Internal Design Single Supply Extra TT and EC Power/Ground Pi Pb Free Packages are Available* PCC FN SUFFI CASE 776 MARKING DIAGRAM MC10645G AWYYWW A W YY WW G = Assembly ocation = Wafer ot = Year = Work Week = Pb Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimeio section on page 4 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. Semiconductor Components Industries, C, 2006 February, 2006 Rev. 6 1 Publication Order Number: MC10645/D
2 MC10645 TT Outputs Q6 Q7 Q8 TT Inputs Q MU Q Q Q Q2 Q3 Q5 Q E S S Q SE SE Q5 Q6 Q GE Q7 Q2 Q1 Q0 Figure 1. ogic Diagram Q8 Figure 2. Pinout: 28 ead PCC (Top iew) Table 1. PIN NAMES PIN FUTION E GE Dn Q0 Q8 SE EC CC (+5.0 ) EC Ground (0 ) TT Signal Input TT Signal Outputs TT Mux Select Table 2. PIN DESCRIPTIONS Pin Symbol Description Pin Symbol Description Q4 Q3 Q2 Q1 Q0 GE SE No Connection EC Ground Select Input (TT) E Q8 Q7 Q6 Q5 EC CC (+5.0 ) Signal Input (TT) Signal Input (TT) No Connection Table 3. TRUT TABE SE Q 2
3 MC10645 Table 4. ABSOUTE RATINGS (Do not exceed) Symbol Characteristic alue Unit E (EC) Power Supply oltage to +7.0 (TT) Power Supply oltage to +7.0 I (TT) Input oltage to +7.0 out Disabled 3 State Output 0.0 to T T stg Storage Temperature 65 to 150 C T amb Operating Temperature 0.0 to +85 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditio) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Table 5. DC CARACTERISTICS ( = E = 5.0 ±5%) 0 C 25 C 85 C Symbol Characteristic Min Max Min Max Min Max Unit Condition I EE Power Supply Current EC ma E Pin I CC TT ma Total all pi I CC ma O Output IG oltage I O = 3.0 ma I O = 15 ma O Output OW oltage I O = 24 ma I OS Output Short Circuit Current ma OUT = 0 NOTE: Device will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. Device specification limit values are applied individually under normal operating conditio and not valid simultaneously. Table 6. TT DC CARACTERISTICS ( = E = 5.0 ±5%) 0 C 25 C 85 C Symbol Characteristic Min Max Min Max Min Max Unit Condition I I Input IG oltage Input OW oltage I I Input IG Current A IN = 2.7 IN = 7.0 I I Input OW Current ma IN = O Output IG oltage I O = 3.0 ma I O = 24 ma O Output OW oltage I O = 24 ma IK Input Clamp oltage I IN = 18 ma I OS Output Short Circuit Current ma OUT = 0 NOTE: Device will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. Device specification limit values are applied individually under normal operating conditio and not valid simultaneously. 3
4 MC10645 Table 7. AC CARACTERISTICS ( = E = 5.0 ±5%) 0 C 25 C 85 C Symbol Characteristic Min Max Min Max Min Max Unit Condition t P t P D 0 to Output Only D 1 to Output Q0 Q C = 50 pf t P D 0 to Output D 1 to Output t skpp Part to Part Skew D 0 to Output Only t skwd * Within Device Skew D 0 to Output Only t P SE to Q Q0 Q C = 50 pf t r t f Output Rise/Fall Time 0.8 to Q0 Q8 C = 50 pf t S Setup Time SE to D NOTE: Device will meet the specificatio after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained traverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditio is not implied. Device specification limit values are applied individually under normal operating conditio and not valid simultaneously. *Within Device Skew defined as identical traitio on similar paths through a device. Table 8. DUTY CYCE SPECIFICATIONS (0 C T A 85 C; Duty Cycle Measured Relative to 1.5 ) Symbol Characteristic Min Nom Max Unit Condition PW Range of CC and C to Meet Min Pulse Width (IG or OW) at f out 50Mz CC C PW pf All Outputs ORDERING INFORMATION Device Package Shipping MC10645FN PCC Units / Rail MC10645FNG PCC 28 (Pb Free) 37 Units / Rail MC10645FNR2 PCC / Tape & Reel MC10645FNR2G PCC 28 (Pb Free) 500 / Tape & Reel For information on tape and reel specificatio, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specificatio Brochure, BRD8011/D. 4
5 MC10645 PACKAGE DIMENSIONS PCC 28 FN SUFFI CASE ISSUE E N Y BRK B (0.180) M T M S N S U (0.180) M T M S N S D M Z 28 1 W D IEW D D G (0.250) S T M S N S Z A R (0.180) M T M S N S (0.180) M T M S N S (0.180) M T M S N S C E K1 G G1 J IEW S (0.100) T SEATING PANE K F (0.180) M T M S N S (0.250) S T M S N S IEW S NOTES: 1. DATUMS, M, AND N DETERMINED WERE TOP OF EAD SOUDER EITS PASTIC BODY AT MOD PARTING INE. 2. DIMENSION G1, TRUE POSITION TO BE MEASURED AT DATUM T, SEATING PANE. 3. DIMENSIONS R AND U DO NOT IUDE MOD FAS. AOWABE MOD FAS IS (0.250) PER SIDE. 4. DIMENSIONING AND TOERAING PER ANSI Y14.5M, CONTROING DIMENSION: I. 6. TE PACKAGE TOP MAY BE SMAER TAN TE PACKAGE BOTTOM BY UP TO (0.300). DIMENSIONS R AND U ARE DETERMINED AT TE OUTERMOST ETREMES OF TE PASTIC BODY ECUSIE OF MOD FAS, TIE BAR BURRS, GATE BURRS AND INTEREAD FAS, BUT IUDING ANY MISMATC BETWEEN TE TOP AND BOTTOM OF TE PASTIC BODY. 7. DIMENSION DOES NOT IUDE DAMBAR PROTRUSION OR INTRUSION. TE DAMBAR PROTRUSION(S) SA NOT CAUSE TE DIMENSION TO BE GREATER TAN (0.940). TE DAMBAR INTRUSION(S) SA NOT CAUSE TE DIMENSION TO BE SMAER TAN (0.635). IES MIIMETERS DIM MIN MA MIN MA A B C E F G BSC 1.27 BSC J K R U W Y Z G K
6 MC10645 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, coequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any licee under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICATION ORDERING INFORMATION ITERATURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@oemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative. MC10645/D
7 Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & ifecycle Information: ON Semiconductor: MC10645FN MC10645FNR2
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MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
The MC10109 is a dual 4 5 input OR/NOR gate. P D = 30 mw typ/gate (No Load) t pd = 2.0 ns typ t r, t f = 2.0 ns typ (20% 80%)
The MC10109 is a dual 5 input OR/NOR gate. P D = 0 mw typ/gate (No Load) t pd =.0 ns typ t r, t f =.0 ns typ (0% 0%) LOGIC DIAGRAM MARKING DIAGRAMS CDIP 16 L SUFFIX CASE 60 PDIP 16 P SUFFIX CASE 6 PLCC
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM
Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL
Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MC10EP57, MC100EP V / 5V ECL 4:1 Differential Multiplexer
3.3V / 5V ECL 4:1 Differential Multiplexer Description The MC10/100EP57 is a fully differential 4:1 multiplexer. By leaving the SEL1 line open (pulled LOW via the input pulldown resistors) the device can
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W
NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
MARKING DIAGRAMS LOGIC DIAGRAM ORDERING INFORMATION DIP PIN ASSIGNMENT CDIP 16 L SUFFIX CASE 620 MC10124L AWLYYWW
The MC024 is a quad translator for interfacing data and control signals between a saturated logic section and the MECL section of digital systems. The MC024 has TTL compatible inputs, and MECL complementary
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
MUR120 Series. SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 ULTRAFAST RECTIFIERS 1.0 AMPERE, VOLTS
MUR12 Series SWITCHMODE Power Rectifiers MUR15, MUR11, MUR115, MUR12, MUR13, MUR14, MUR16 The MUR12 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and
Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High