MC10H352. Quad CMOS to PECL* Translator
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1 Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is available. The MC10H352 has CMOS compatible inputs and PECL complementary open emitter outputs that allow use as an inverting/non inverting translator or as a differential line driver. When the common strobe input is at a low logic level, it forces all true outputs to the PECL low logic state ( +3.2 V) and all inverting outputs to the PECL high logic state ( +4.1 V). The MC10H352 can also be used with the MC10H350 to transmit and receive CMOS information differentially via balanced twisted pair lines. Features Single +5.0 V Power Supply All V CC Pins Isolated On Chip Differentially Drive Balanced Lines t pd = 1.3 nsec Typical Pb Free Packages are Available* PDIP P SUFFIX CASE 738 MARKING DIAGRAMS* 1 10H352G AWLYYWW 1 MC10H352P AWLYYWWG 1 PLLC FN SUFFIX CASE 775 A WL YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb Free Package *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 06 February, 06 Rev. 7 1 Publication Order Number: MC10H352/D
2 1 ECL V CC B IN A IN D IN C IN C OUT COMMON STROBE 9 18 C OUT V CC (+5.0 VDC) = PINS 6, 11, 15, GND = PIN 10 Figure 1. Logic Diagram N.C. V CC B IN A IN COMMON STROBE GND C OUT C OUT V CC 2 C IN N.C. Pin assignment is for Dual in Line Package. For PLCC pin assignment, see the Pin Conversion Tables on page 18 of the ON Semiconductor MECL Data Book (DL122/D). Figure 2. Pin Assignment D IN CMOS V CC Table 1. MAXIMUM RATINGS Symbol Characteristic Rating Unit V CC Power Supply 0 to +7.0 Vdc V I Input Voltage (V CC = 5.0 V) 0 to V CC Vdc I out Output Current Continuous Surge T A Operating Temperature Range 0 to +75 C T stg Storage Temperature Range Plastic Ceramic to to +165 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ma C 2
3 Table 2. ELECTRICAL CHARACTERISTICS (V CC = V CC1 = V CC2 = 5.0 V ± 5.0%) (Note 1) Symbol Characteristic Min Max Min Max Min Max Unit ECL Power Supply ma TTL Current 15 ma I R I F V (BR)in V I V OH V OL Reverse Current Pins 7, 8, 12, 14 Pin 9 Forward Current Pins 7, 8, 12, 14 Pin 9 Input Voltage Breakdown Input Clamp Voltage (I in = 18 ma) High Output Voltage (Note 2) Low Output Voltage (Note 2) Vdc A ma Vdc Vdc Vdc V IH High Input Voltage Vdc V IL Low Input Voltage Vdc *Positive Emitter Coupled Logic 1. Each MECL 10H series circuit has been designed to meet the dc specifications shown in the test table, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained. Outputs are terminated through a 50 resistor to V CC 2.0 Vdc. 2. With V CC at 5.0 V. V OH /V OL change 1:1 with V CC. Table 3. AC PARAMETERS Symbol Characteristic Min Max Min Max Min Max Unit t pd Propagation Delay (Note 3) ns t r Rise Time (% to 80%) ns t f Fall Time (80% to %) ns f max Maximum Operating Frequency MHz NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Propagation delay is measured on this circuit from V CC /2 on the input waveform to the 50% point on the output waveform. 3
4 ORDERING INFORMATION Device Package Shipping MC10H352FN PLLC 46 Units / Rail MC10H352FNG PLLC (Pb Free) 46 Units / Rail MC10H352FNR2 PLLC 500 / Tape & Reel MC10H352FNR2G PLLC (Pb Free) 500 / Tape & Reel MC10H352P PDIP 18 Unit / Rail MC10H352PG PDIP (Pb Free) 18 Unit / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 4
5 PACKAGE DIMENSIONS LEAD PLLC CASE ISSUE E B N Y BRK U D L M Z W 1 D X G (0.250) S T L M S N S V VIEW D D A Z R H C G G (0.250) S T L M S N S E (0.100) J T SEATING PLANE VIEW S K1 K VIEW S NOTES: 1. DIMENSIONS AND TOLERANCING PER ANSI Y14.5M, DIMENSIONS IN INCHES. 3. DATUMS L, M, AND N DETERMINED WHERE TOP OF LEAD SHOULDER EXITS PLASTIC BODY AT MOLD PARTING LINE. 4. DIMENSION G1, TRUE POSITION TO BE MEASURED AT DATUM T, SEATING PLANE. 5. DIMENSIONS R AND U DO NOT INCLUDE MOLD FLASH. ALLOWABLE MOLD FLASH IS (0.250) PER SIDE. 6. DIMENSIONS IN THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM BY UP TO (0.300). DIMENSIONS R AND U ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 7. DIMENSION H DOES NOT INCLUDE DAMBAR PROTRUSION OR INTRUSION. THE DAMBAR PROTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE GREATER THAN (0.940). THE DAMBAR INTRUSION(S) SHALL NOT CAUSE THE H DIMENSION TO BE SMALLER THAN (0.635). F INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C E F G BSC 1.27 BSC H J K R U V W X Y Z G K
6 PACKAGE DIMENSIONS T SEATING PLANE 1 G E A F D PL N B PDIP P SUFFIX PLASTIC DIP PACKAGE CASE ISSUE E K C 0.25 (0.010) M T A M L M J PL 0.25 (0.010) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E BSC 1.27 BSC F G BSC 2.54 BSC J K L BSC 7.62 BSC M N MECL 10H is a trademark of Motorola, Inc. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MC10H352/D
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Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MC10H645. 1:9 TTL Clock Driver
MC10645 1:9 TT Clock Driver Description The MC10645 is a single supply, low skew, TT I/O 1:9 Clock Driver. Devices in the 600 clock driver family utilizes the PCC 28 for optimal power and signal pin placement.
MC10E V, -5V Dual ECL Output Comparator with Latch
5V, -5V Dual ECL Output Comparator with Latch The MC10E1652 is fabricated using ON Semiconductor s advanced MOSAIC III process and is output compatible with 10H logic devices. In addition, the device is
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors
BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD, MJDC (NPN), MJD, MJDC (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS
MPS65, MPS65, MPS, MPS, MPS65 and MPS are Preferred Devices Amplifier Transistors Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol MPS65 MPS MPS65 MPS Unit Collector Emitter Voltage
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
MJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
TCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
.0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers
NBXDBA V, MHz / MHz LVPECL Clock Oscillator
. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W
NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.
2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W
N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators
, LM293, LM293, LM293V, NCV293 Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors
MJD4, NJMJD4T4G (NPN), MJD, NJMJDT4G (PNP) High oltage Power Transistors for Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications