LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators

Size: px
Start display at page:

Download "LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators"

Transcription

1 , LM293, LM293, LM293V, NCV293 Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed to permit a common mode rangetoground level with single supply operation. Input offset voltage specifications as low as 2. mv make this device an excellent selection for many applications in consumer, automotive, and industrial electronics. Features Wide SingleSupply Range: 2. Vdc to 36 Vdc SplitSupply Range: ±. Vdc to ± Vdc Very Low Current Drain Independent of Supply Voltage:.4 ma Low Input Bias Current: 25 na Low Input Offset Current: 5. na Low Input Offset Voltage: 5. mv (max) LM293/393 Input Common Mode Range to Ground Level Differential Input Voltage Range Equal to Power Supply Voltage Output Voltage Compatible with DTL, ECL, TTL, MOS, and CMOS Logic Levels ESD Clamps on the Inputs Increase the Ruggedness of the Device without Affecting Performance NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes PbFree Packages are Available + Input Input Output PDIP N SUFFIX CASE 626 SOIC D SUFFIX CASE 75 PIN CONNECTIONS (Top View) Micro DM SUFFIX CASE 46A Output A 2 7 Output B Inputs A Inputs B GND 4 5 F Q3 R4 2. k Q4 Q5 R2 2. k Q6 Q4 DEVICE MARKING & ORDERING INFORMATION See detailed ordering and shipping information and marking information in the package dimensions section on pages 6 and 7 of this data sheet. R 4.6 k Q Q2 Q Q9 Q Q Q2 Q5 Q6 Figure. Representative Schematic Diagram (Diagram shown is for comparator) Semiconductor Components Industries, LLC, 24 October, 24 Rev. 5 Publication Order Number: /D

2 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage +36 or ± Vdc Input Differential Voltage Range V IDR 36 Vdc Input Common Mode Voltage Range V ICR.3 to +36 Vdc Output Short CircuittoGround Output Sink Current (Note ) Power T A = 25 C Derate above 25 C Operating Ambient Temperature Range LM293 LM293 LM293V, NCV293 (Note 2) Maximum Operating Junction Temperature, 293, LM293V LM293, NCV293 I SC I Sink Continuous 2 P D 57 /R JA 5.7 T A 25 to +5 to +7 4 to +5 4 to +25 T J(max) 5 5 ma mw mw/ C C C Storage Temperature Range T stg 65 to +5 C ESD Protection at any Pin Human Body Model Machine Model V esd 2 2 V Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. The maximum output current may be as high as 2 ma, independent of the magnitude of, output short circuits to can cause excessive heating and eventual destruction. 2. NCV293 is qualified for automotive use. 2

3 ELECTRICAL CHARACTERISTICS ( = 5. Vdc, T low T A T high, unless otherwise noted.) LM293, LM293, LM293V, NCV293 Characteristic Symbol Min Typ Max Min Typ Max Unit Input Offset Voltage (Note 4) V IO mv T A = 25 C ±. ±5. ±2. ±7. T low T A T high Input Offset Current I IO na T A = 25 C ±5. ±5 ±5. ±5 T low T A T high ±5 ±5 ±2 Input Bias Current (Note 5) I IB na T A = 25 C T low T A T high Input Common Mode Voltage Range (Note 5) V ICR V T A = 25 C.5.5 T low T A T high Voltage Gain A VOL V/mV R L 5 k, = 5 Vdc, T A = 25 C Large Signal Response Time 3 3 ns V in = TTL Logic Swing, V ref =.4 Vdc V RL = 5. Vdc, R L = 5. k, T A = 25 C Response Time (Note 7) t TLH.3.5 s V RL = 5. Vdc, R L = 5. k, T A = 25 C Input Differential Voltage (Note ) V ID V All V in GND or V Supply (if used) Output Sink Current I Sink ma V in. Vdc, V in+ = Vdc, V O.5 Vdc T A = 25 C Output Saturation Voltage V OL mv V in. Vdc, V in+ =, I Sink 4. ma, T A = 25 C T low T A T high Output Leakage Current I OL na V in = V, V in+. Vdc, V O = 5. Vdc, T A = 25 C.. V in = V, V in+. Vdc, V O = 3 Vdc, T low T A T high Supply Current I CC ma R L = Both Comparators, T A = 25 C R L = Both Comparators, = 3 V LM293 T low = 25 C, T high = +5 C T low = C, T high = +7 C LM293 T low = 4 C, T high = +5 C LM293V & NCV293 T low = 4 C, T high = +25 C NCV293 is qualified for automotive use. 3. The maximum output current may be as high as 2 ma, independent of the magnitude of, output short circuits to can cause excessive heating and eventual destruction. 4. At output switch point, V O.4 Vdc, R S = with from 5. Vdc to 3 Vdc, and over the full input common mode range ( V to =.5 V). 5. Due to the PNP transistor inputs, bias current will flow out of the inputs. This current is essentially constant, independent of the output state, therefore, no loading changes will exist on the input lines. 6. Input common mode of either input should not be permitted to go more than.3 V negative of ground or minus supply. The upper limit of common mode range is.5 V. 7. Response time is specified with a mv step and 5. mv of overdrive. With larger magnitudes of overdrive faster response times are obtainable.. The comparator will exhibit proper output state if one of the inputs becomes greater than, the other input must remain within the common mode range. The low input state must not be less than.3 V of ground or minus supply. 3

4 I IB, INPUT BIAS CURRENT (na) V OL, SATURATION VOLTAGE (Vdc) I CC, SUPPLY CURRENT (ma) LM293/ , SUPPLY VOLTAGE (Vdc)... Figure 2. Input Bias Current versus Power Supply Voltage T A = +25 C T A = +25 C Out of Saturation I Sink, OUTPUT SINK CURRENT (ma) Figure 4. Output Saturation Voltage versus Output Sink Current, SUPPLY VOLTAGE (Vdc) T A = 55 C T A = 55 C R L = T A = 55 C T A = C T A = +7 C T A = C T A = +7 C T A = +25 C Figure 6. Power Supply Current versus Power Supply Voltage I CC, SUPPLY CURRENT (ma) V OL, SATURATION VOLTAGE (Vdc) I IB, INPUT BIAS CURRENT (na) LM293 T A = 4 C T A = +5 C , SUPPLY VOLTAGE (Vdc) Figure 3. Input Bias Current versus Power Supply Voltage T A = C T A = 4 C T A = C T A = +5 C Out of Saturation I Sink, OUTPUT SINK CURRENT (ma) Figure 5. Output Saturation Voltage versus Output Sink Current , SUPPLY VOLTAGE (Vdc) R L = T A = 4 C T A = C T A = +5 C Figure 7. Power Supply Current versus Power Supply Voltage 4

5 APPLICATIONS INFORMATION These dual comparators feature high gain, wide bandwidth characteristics. This gives the device oscillation tendencies if the outputs are capacitively coupled to the inputs via stray capacitance. This oscillation manifests itself during output transitions (V OL to V OH ). To alleviate this situation, input resistors < k should be used. The addition of positive feedback (< mv) is also recommended. It is good design practice to ground all unused pins. Differential input voltages may be larger than supply voltage without damaging the comparator s inputs. Voltages more negative than.3 V should not be used. +5 V V in R.2 k R D R4 22 k 6. k R2 R5 22 k k + V in V in(min) 5 k R3 M V in k D prevents input from going negative by more than.6 V. R + R2 = R3 R3 R5 for small error in zero crossing. V EE V O V EE V in(min).4 V peak for % phase distortion (). Figure. Zero Crossing Detector (Single Supply) Figure 9. Zero Crossing Detector (Split Supply) VCC. F. M R L k V O t + V C C R R L + V O 5 k 5 k + 5 k V O ON for t t O + t where: t = RC n ( V ref ) + V ref V in V O V ref t V C t O V ref t Figure. FreeRunning SquareWave Oscillator Figure. Time Delay Generator R S = R R2 V ref R R S + R2 R L V th = V ref + V th2 = V ref ( V ref ) R R + R2 + R L (V ref V O Low) R R + R2 Figure 2. Comparator with Hysteresis 5

6 MARKING DIAGRAMS N AWL YYWW PDIP N SUFFIX CASE 626 LM293N AWL YYWW x93 AYW Micro DM SUFFIX CASE 46A 293 AYW SOIC D SUFFIX CASE 75 LMx93 ALYW 293 ALYW 293V ALYW * x = 2 or 3 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week *This marking diagram also applies to NCV293DR2. 6

7 ORDERING INFORMATION Device Package Shipping LM293D SOIC 9 Units / Rail LM293DR2 SOIC 25 Units / Reel LM293DR2G SOIC LM293DMR2 Micro 4 Tape and Reel D SOIC 9 Units / Rail DG SOIC DR2 SOIC 25 Units / Reel DR2G SOIC N PDIP 5 Units / Rail NG PDIP DMR2 Micro 4 Tape and Reel DMR2G Micro LM293D SOIC 9 Units / Reel LM293DR2 SOIC 25 Units /Reel LM293N PDIP 5 Units / Rail LM293DMR2 Micro 4 Tape and Reel LM293VD SOIC 9 Units / Reel LM293VDG SOIC LM293VDR2 SOIC 25 Units /Reel LM293VDR2G SOIC LM293VN PDIP 5 Units / Rail NCV293DR2 (Note 9) SOIC 25 Tape and Reel NCV293DR2G (Note 9) SOIC NCV293DMR2 (Note 9) Micro 4 Tape and Reel 9. NCV293 is qualified for automotive use. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D. 7

8 PACKAGE DIMENSIONS PDIP N SUFFIX CASE 6265 ISSUE L 5 B NOTES:. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 92. NOTE 2 T SEATING PLANE H 4 F A C N D K G.3 (.5) M T A M B M L J M MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G 2.54 BSC. BSC H J K L 7.62 BSC.3 BSC M N

9 SOIC D SUFFIX CASE 757 ISSUE AC X B Y Z H G A D 5 4 S C.25 (.) M Z Y S X S.25 (.) M SEATING PLANE Y. (.4) M N X 45 M K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 756 ARE OBSOLETE. NEW STANDARD IS 757. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M N S SOLDERING FOOTPRINT* SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9

10 PACKAGE DIMENSIONS PIN ID K T SEATING PLANE.3 (.5) G A B D PL. (.3) M T B S A S C Micro DM SUFFIX CASE 46A2 ISSUE F H J L NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.25 (.) PER SIDE A OBSOLETE, NEW STANDARD 46A2. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C..43 D G.65 BSC.26 BSC H J K L SOLDERING FOOTPRINT*.4 X X X.256 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Micro is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 632, Phoenix, Arizona 5232 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. /D

11 This datasheet has been download from: Datasheets for electronics components.

LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators

LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators , LM293, LM293, LM293V, NCV293 Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed

More information

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators

LM393, LM293, LM2903, LM2903V, NCV2903, NCV2903V. Low Offset Voltage Dual Comparators , LM293, LM293, LM293V, NCV293, NCV293V Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are

More information

LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators

LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators LM393, LM293, LM2903, LM2903V, NCV2903 Low Offset Voltage Dual Comparators The LM393 series are dual independent precision voltage comparators capable of single or split supply operation. These devices

More information

LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators

LM339, LM239, LM2901, LM2901V, NCV2901, MC3302. Single Supply Quad Comparators LM339, LM239, LM290, LM290V, NCV290, MC3302 Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer, automotive,

More information

LM339S, LM2901S. Single Supply Quad Comparators

LM339S, LM2901S. Single Supply Quad Comparators LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features

More information

PIN CONNECTIONS

PIN CONNECTIONS Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/v EE, and single

More information

MC3488A. Dual EIA 423/EIA 232D Line Driver

MC3488A. Dual EIA 423/EIA 232D Line Driver Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard

More information

MC34164, MC33164, NCV33164

MC34164, MC33164, NCV33164 MC3464, MC3364, NCV3364 Micropower Undervoltage Sensing Circuits The MC3464 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based

More information

LM258, LM358, LM358A, LM2904, LM2904A, LM2904V, NCV2904. Single Supply Dual Operational Amplifiers

LM258, LM358, LM358A, LM2904, LM2904A, LM2904V, NCV2904. Single Supply Dual Operational Amplifiers LM25, LM35, LM35A, LM2904, LM2904A, LM2904V, NCV2904 Single Supply Dual Operational Amplifiers Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers

More information

TCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers

TCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers .0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers

More information

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator

More information

Output. Single Supply. Output. Input polarity is reversed when GND pin is used as an output. Load Referred to Negative Supply. Output.

Output. Single Supply. Output. Input polarity is reversed when GND pin is used as an output. Load Referred to Negative Supply. Output. Single Comparators The ability to operate from a single power supply of. V to V or V split supplies, as commonly used with operational amplifiers, makes the LM/LM a truly versatile comparator. Moreover,

More information

MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION PDIP 8 N SUFFIX CASE 626 LM311D AWL YYWW SO 8 98 Units/Rail

MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION PDIP 8 N SUFFIX CASE 626 LM311D AWL YYWW SO 8 98 Units/Rail The ability to operate from a single power supply of 5.0 V to 30 V or 15 V split supplies, as commonly used with operational amplifiers, makes the LM211/LM311 a truly versatile comparator. Moreover, the

More information

MC10H352. Quad CMOS to PECL* Translator

MC10H352. Quad CMOS to PECL* Translator Quad CMOS to PECL* Translator Description The MC10H352 is a quad translator for interfacing data between a CMOS logic section and the PECL section of digital systems when only a +5.0 Vdc power supply is

More information

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

NCV1009ZG. 2.5 Volt Reference

NCV1009ZG. 2.5 Volt Reference V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance

More information

MAXIMUM RATINGS (T A = +25 C, unless otherwise noted.) PIN CONNECTIONS

MAXIMUM RATINGS (T A = +25 C, unless otherwise noted.) PIN CONNECTIONS The LM324 series are low cost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply applications.

More information

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier

NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier 4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference

More information

MC34064, MC33064, NCV33064

MC34064, MC33064, NCV33064 MC3464, MC3364, NCV3364 Undervoltage Sensing Circuit The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessorbased systems. It offers the designer

More information

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching

More information

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component

More information

NSTB1002DXV5T1G, NSTB1002DXV5T5G

NSTB1002DXV5T1G, NSTB1002DXV5T5G NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

LM258, LM358, LM358A, LM358E, LM2904, LM2904A, LM2904E, LM2904V, NCV2904, NCV2904V. Single Supply Dual Operational Amplifiers

LM258, LM358, LM358A, LM358E, LM2904, LM2904A, LM2904E, LM2904V, NCV2904, NCV2904V. Single Supply Dual Operational Amplifiers LM25, LM35, LM35A, LM35E, LM2904, LM2904A, LM2904E, LM2904V, NCV2904, Single Supply Dual Operational Amplifiers Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

MARKING DIAGRAMS ORDERING INFORMATION Figure 1. Representative Schematic Diagram (Each Amplifier) DUAL MC33078P

MARKING DIAGRAMS ORDERING INFORMATION Figure 1. Representative Schematic Diagram (Each Amplifier) DUAL MC33078P The MC33078/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications.

More information

P2I2305NZ. 3.3V 1:5 Clock Buffer

P2I2305NZ. 3.3V 1:5 Clock Buffer 3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series B Suffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.

BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6. Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value

More information

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet.

ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. The MC3320/2/4 family of operational amplifiers provide railtorail operation on both the input and output. The inputs can be driven as high as 200 mv beyond the supply rails without phase reversal on the

More information

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8

NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual

More information

MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS

MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use

More information

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

Audio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment. Features PIN CONNECTIONS

Audio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment.   Features PIN CONNECTIONS NE3, SA3, SE3, NE3A, SA3A, SE3A Single Low Noise Operational Amplifier The NE/SA/SE3/3A are single high-performance low noise operational amplifiers. Compared to other operational amplifiers, such as TL3,

More information

NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8

NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8 NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM Preferred Device General Purpose Transistor PNP Silicon Features PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Collector Base Voltage V CBO 4

More information

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier MC3334 Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier The MC3334 is a monolithic bipolar operational amplifier. This low voltage rail to rail amplifier has both a rail to rail input and output

More information

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

MC33078, MC MARKING DIAGRAMS. Features

MC33078, MC MARKING DIAGRAMS. Features MC337, MC3379 Low Noise Dual/Quad Operational Amplifiers The MC337/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for

More information

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

More information

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series

BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

More information

MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION

MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION The MC346/MC336 are universal voltage monitors intended for use in a wide variety of voltage sensing applications. These devices offer the circuit designer an economical solution for positive and negative

More information

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75 Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

More information

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NSQA6V8AW5T2 Series Transient Voltage Suppressor Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

More information

MARKING DIAGRAMS ORDERING INFORMATION DUAL MC33272AP AWL YYWW PDIP 8 P SUFFIX CASE 626 SO 8 D SUFFIX CASE ALYWA QUAD

MARKING DIAGRAMS ORDERING INFORMATION DUAL MC33272AP AWL YYWW PDIP 8 P SUFFIX CASE 626 SO 8 D SUFFIX CASE ALYWA QUAD The MC33272/74 series of monolithic operational amplifiers are quality fabricated with innovative Bipolar design concepts. This dual and quad operational amplifier series incorporates Bipolar inputs along

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break

NTD7N ELECTRICAL CHARACTERISTICS ( unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Break NTD7N Power MOSFET V, 8 A, Single N Channel, Features Low R DS(on) High Current Capability Low Gate Charge These are Pb Free Devices Applications Electronic Brake Systems Electronic Power Steering Bridge

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8 NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

More information

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W

2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features

More information

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators

MC34063A, MC33063A, NCV33063A. 1.5 A, Step Up/Down/ Inverting Switching Regulators MC3403A, MC3303A, NCV3303A.5 A, Step Up/Down/ Inverting Switching Regulators The MC3403A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These

More information

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MMBT3906TT1G. General Purpose Transistors. PNP Silicon GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT General Purpose Transistors PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT46/SC75 package which is designed for low power surface mount applications.

More information

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70 NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

More information

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75 NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

More information

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for

More information

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m

NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of

More information

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

MPSA18G. NPN Silicon. Pb Free Packages are Available* Features.  MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45

More information

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4. NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection

More information

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications

MJD2955, NJVMJD2955T4G (PNP) MJD3055, NJVMJD3055T4G (NPN) Complementary Power Transistors DPAK For Surface Mount Applications MJD9, NJVMJD9T4G (PNP) MJD3, NJVMJD3T4G (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed

More information

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B

MC14001B Series. B Suffix Series CMOS Gates MC14001B, MC14011B, MC14023B, MC14025B, MC14071B, MC14073B, MC14081B, MC14082B MC4B Series BSuffix Series CMOS Gates MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B, MC4B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure

More information

NTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223

NTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223 NTF955 Power MOSFET V,. A, Single P Channel SOT Features TMOS7 Design for low R DS(on) Withstands High Energy in Avalanche and Commutation Modes Pb Free Package is Available Applications Power Supplies

More information

Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

More information

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS

2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

More information

BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D

NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital

More information

MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient

More information

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

More information

MC33201, MC33202, MC33204, NCV33202, NCV Low Voltage, Rail-to-Rail Operational Amplifiers

MC33201, MC33202, MC33204, NCV33202, NCV Low Voltage, Rail-to-Rail Operational Amplifiers MC332, MC3322, MC3324, NCV3322, NCV3324 Low Voltage, Rail-to-Rail Operational Amplifiers The MC332/2/4 family of operational amplifiers provide railtorail operation on both the input and output. The inputs

More information

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features. MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution

More information

MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors

MMUN2111LT1G, SMMUN21xxLT3G. NSVMMUN2111LT1G Series. Bias Resistor Transistors MMUNLTG, SMMUNLTG, NSVMMUNLTG Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace

More information

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

More information

MARKING DIAGRAMS Split Supplies Single Supply PIN CONNECTIONS MAXIMUM RATINGS ORDERING INFORMATION SO 14 D SUFFIX CASE 751A

MARKING DIAGRAMS Split Supplies Single Supply PIN CONNECTIONS MAXIMUM RATINGS ORDERING INFORMATION SO 14 D SUFFIX CASE 751A The MC3403 is a low cost, quad operational amplifier with true differential inputs. The device has electrical characteristics similar to the popular MC1741C. However, the MC3403 has several distinct advantages

More information

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET

NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer . V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

More information

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF

More information

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK

NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and

More information