Audio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment. Features PIN CONNECTIONS
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1 NE3, SA3, SE3, NE3A, SA3A, SE3A Single Low Noise Operational Amplifier The NE/SA/SE3/3A are single high-performance low noise operational amplifiers. Compared to other operational amplifiers, such as TL3, they show better noise performance, improved output drive capability, and considerably higher small-signal and power bandwidths. This makes the devices especially suitable for application in high quality and professional audio equipment, in instrumentation and control circuits and telephone channel amplifiers. The op amps are internally compensated for gain equal to, or higher than, three. The frequency response can be optimized with an external compensation capacitor for various applications (unity gain amplifier, capacitive load, slew rate, low overshoot, etc.). Features Small-Signal Bandwidth: MHz Output Drive Capability:, V RMS at V S = V Input Noise Voltage: nv Hz DC Voltage Gain: AC Voltage Gain: at khz Power Bandwidth: khz Slew Rate: 3 V/ s Large Supply Voltage Range: 3. to V Applications Audio Equipment Instrumentation and Control Circuits Telephone Channel Amplifiers Medical Equipment BALANCE INVERTING INPUT NON-INVERTING PIN CONNECTIONS V 3 D, N Packages Top View SOIC D SUFFIX CASE 7 PDIP N SUFFIX CASE ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. 7 BALANCE/ COMPENSATION V+ OUTPUT COMPENSATION DEVICE MARKING INFORMATION See general marking information in the device marking section on page of this data sheet. Semiconductor Components Industries, LLC, September, Rev. Publication Order Number: NE3/D
2 7 3 Figure. Equivalent Schematic MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage V S V Input Voltage V IN V Supply V Differential Input Voltage (Note ) V DIFF. V Operating Temperature Range NE SA SE T amb to +7 to + to + Storage Temperature Range T stg to + C Junction Temperature T j C Power Dissipation at C Thermal Resistance, JunctiontoAmbient N Package D Package N Package D Package P D 7 R JA 3 Output Short-Circuit Duration (Note ) Indefinite Lead Soldering Temperature ( sec max) T sld 3 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input voltage exceeds. V. Maximum current should be limited to ma.. Output may be shorted to ground at V S = V, T amb = C. Temperature and/or supply voltages must be limited to ensure dissipation rating is not exceeded. C mw C/W
3 DC ELECTRICAL CHARACTERISTICS (T amb = C; V S = V, unless otherwise noted. ) (Notes 3, and ) NE/SA3/3A SE3/3A Characteristic Symbol Test Conditions Min Typ Max Min Typ Max Unit V OS.... mv Offset Voltage Overtemperature. 3. mv V OS / T.. V/ C I OS 3 na Offset Current Overtemperature na I OS / T pa/ C I B na Input Current Overtemperature na Supply Current Per Op Amp I B / T.. na/ C I CC Overtemperature Common Mode Input Range V CM 3 3 V Common Mode Rejection Ratio CMRR 7 db Power Supply Rejection Ratio PSRR V/V Large-Signal Voltage Gain A VOL R L Ω, V/mV V O = V Overtemperature Output Swing V OUT R L 3 3 V Overtemperature R L ; V S = V R L. k Overtemperature.. Input Resistance R IN 3 k Output Short Circuit Current I SC 3 3 ma 3. For NE3/3A, T MIN = C, T MAX = 7 C.. For SA3/3A, T MIN = C, T MAX = + C.. For SE3/3A, T MIN = C, T MAX = + C. ma 3
4 AC ELECTRICAL CHARACTERISTICS (T amb = C; V S = V, unless otherwise noted. ) NE/SA3/3A SE3/3A Characteristic Symbol Test Conditions Min Typ Max Min Typ Max Unit Output Resistance R OUT A V = 3 db closed-loop f = khz; R L = ; C C = pf Transient Response Voltage-follower, V IN = mv R L = C C = pf, C L = pf.3.3 Rise Time t R ns Overshoot % Transient Response V IN = mv, R L = C C = 7 pf, C L = pf Rise Time t R ns Overshoot 3 3 % Gain A V f = khz, C C =.. V/mV f = khz,.. C C = pf Gain Bandwidth Product GBW C C = pf, C L = pf MHz Slew Rate SR C C = 3 3 V/ s C C = pf.. Power Bandwidth V OUT = V, C C = pf V OUT = V, C C = pf V OUT = V, R L = C C = pf, V CC = V khz ELECTRICAL CHARACTERISTICS (T amb = C; V S = V, unless otherwise noted. ) NE/SA/SE3 NE/SA/SE3A Characteristic Symbol Test Conditions Min Typ Max Min Typ Max Unit Input Noise Voltage V NOISE f O = 3 Hz f O =. khz nv/ Hz Input Noise Current I NOISE f O = 3 Hz f O =. khz.... pa/ Hz Broadband Noise Figure f = Hz to khz; R S =. k Channel Separation f =. khz; R S =. k.9 db db
5 ICAL PERFORMANCE CHARACTERISTICS GAIN (db) C C = pf ICAL VALUES C C = S (V/µs) V S = +V C C GAIN (db) C C = ; RF = kω; RE = Ω C C = ; RF = 9kΩ; RE = kω ICAL VALUES C C = pf; RF = kω; RE = f (Hz) Figure. Open-Loop Frequency Response C C (pf) Figure 3. Slew Rate as a Function of Compensation Capacitance f (Hz) Figure. ClosedLoop Frequency Response 3 V S = +V ICAL VALUES, V S = +V V S = +V, (V) Vo(p-p) C C = pf pf 7pF I O (ma) I I (µa),, 3 7 f (Hz) Figure. LargeSignal Frequency Response T amb (o C) T amb (o C) Figure. Output ShortCircuit Current Figure 7. Input Bias Current 3 ICAL VALUES I O = V IN (V) NEG POS I P I N (ma) (nv Hz ) Vp; -V N (V) Figure. Input CommonMode Voltage Range Vp; -V N (V) Figure 9. Supply Current Per Op Amp 3 f (Hz) Figure. Input Noise Voltage Density
6 ICAL PERFORMANCE CHARACTERISTICS ICAL VALUES ICAL VALUES (nv Hz ) In(rms) (pa Hz ) 3 f (Hz) Figure. Input Noise Current Density Vn(rms) 3 khz THERMAL NOISE OF SOURCE RESISTANCE 3 R S (Ω) Hz Figure. Total Input Noise Density Vn(rms) (µv) Hz TO khz Hz TO khz R S (Ω) Figure 3. Broadband Input Noise Voltage
7 TEST LOAD CIRCUITS kω V+ C C kω - 3 C C 7 R S Ω V I R F R E pf Ω 3 + V- Figure. Frequency Compensation and Offset Voltage Adjustment Circuit Figure. Closed-Loop Frequency Response CAL OSC Ω POWER SUPPLY +V CC -V CC + DUT - kω CAL METER +db BANDPASS AT khz (nv Hz ) (nv Hz ) Ω TEST BOARD BANDPASS AT 3Hz GND Figure. Noise Test Block Diagram 7
8 ORDERING INFORMATION Device Description Temperature Range Shipping NE3AD Pin Plastic Small Outline Package to +7 C 9 Units/Rail NE3ADR Pin Plastic Small Outline Package to +7 C Tape & Reel NE3AN Pin Plastic Dual InLine Package to +7 C Units/Rail NE3D Pin Plastic Small Outline Package to +7 C 9 Units/Rail NE3DR Pin Plastic Small Outline Package to +7 C Tape & Reel NE3N Pin Plastic Dual InLine Package to +7 C Units/Rail SA3AD Pin Plastic Small Outline Package to + C 9 Units/Rail SA3ADR Pin Plastic Small Outline Package to + C Tape & Reel SA3AN Pin Plastic Dual InLine Package to + C Units/Rail SA3N Pin Plastic Dual InLine Package to + C Units/Rail SE3AN Pin Plastic Dual InLine Package to + C Units/Rail SE3N Pin Plastic Dual InLine Package to + C Units/Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD/D.
9 PACKAGE DIMENSIONS SOIC NB D SUFFIX CASE 77 ISSUE AB Y B X A S. (.) M Y M K NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9.. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.. MAXIMUM MOLD PROTRUSION. (.) PER SIDE.. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.7 (.) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.. 7 THRU 7 ARE OBSOLETE. NEW STANDARD IS 77. Z H G D C. (.) M Z Y S X S SEATING PLANE. (.) N X M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.7 BSC. BSC H.... J K..7.. M N.... S.... PDIP N SUFFIX CASE ISSUE L B NOTES:. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL.. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 9. NOTE T SEATING PLANE H F A C N D K G.3 (.) M T A M B M L J M MILLIMETERS INCHES DIM MIN MAX MIN MAX A B.... C D.3... F G. BSC. BSC H J..3.. K L 7. BSC.3 BSC M N
10 MARKING DIAGRAMS SOIC D SUFFIX CASE 7 N3 ALYWA S3 ALYWA N3 ALYW PDIP N SUFFIX CASE NE3AN NE3N SA3AN SA3N SE3AN SE3N A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 3, Phoenix, Arizona 3 USA Phone: 977 or 33 Toll Free USA/Canada Fax: 9779 or 337 Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: 9 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 3 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. NE3/D
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NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
PIN CONNECTIONS
Utilizing the circuit designs perfected for Quad Operational Amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to ground/v EE, and single
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NTF2955. Power MOSFET. 60 V, 2.6 A, Single P Channel SOT 223
NTF955 Power MOSFET V,. A, Single P Channel SOT Features TMOS7 Design for low R DS(on) Withstands High Energy in Avalanche and Commutation Modes Pb Free Package is Available Applications Power Supplies
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
LM393, LM293, LM2903, LM2903V, NCV2903. Low Offset Voltage Dual Comparators
, LM293, LM293, LM293V, NCV293 Low Offset Voltage Dual Comparators The series are dual independent precision voltage comparators capable of single or split supply operation. These devices are designed
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier
NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv
MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D
Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
CS8183. Dual Micropower 200 ma Low Dropout Tracking Regulator/Line Driver
Dual Micropower ma Low Dropout Tracking Regulator/Line Driver The is a dual low dropout tracking regulator designed to provide adjustable buffered output voltages that closely track (±1 mv) the reference
MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Col
MD9 (PNP) MD3 (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NCS MHz Voltage Feedback Op Amp
75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
MMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection
3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A