NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier

Size: px
Start display at page:

Download "NCS2004, NCS2004A. 3.5 MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier"

Transcription

1 NCS, NCSA. MHz, Wide Supply, Rail-to-Rail Output Operational Amplifier The NCS operational amplifier provides rail to rail output operation. The output can swing within 7 mv to the positive rail and mv to the negative rail. This rail to rail operation enables the user to make optimal use of the entire supply voltage range while taking advantage of. MHz bandwidth. The NCS can operate on supply voltage as low as. V over the temperature range of C to C. The high bandwidth provides a slew rate of. V/ s while only consuming a typical 9 A of quiescent current. Likewise the NCS can run on a supply voltage as high as 6 V making it ideal for a broad range of battery operated applications. Since this is a CMOS device it has high input impedance and low bias currents making it ideal for interfacing to a wide variety of signal sensors. In addition it comes in either a small SC 88A or UDFN package allowing for use in high density PCB s. Features Rail To Rail Output Wide Bandwidth:. MHz High Slew Rate:. V/ s Wide Power Supply Range:. V to 6 V Low Supply Current: 9 A Low Input Bias Current: pa Wide Temperature Range: C to C Small Packages: Pin SC 88A and UDFN6.6x.6 These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Applications Notebook Computers Portable Instruments SC 88A (SC 7 ) SN SUFFIX CASE 9A MARKING DIAGRAMS ADK = Specific Device Code M = Date Code = Pb Free Package (Note: Microdot may be in either location) 6 IN+ V SS IN UDFN6 CASE 7AP xx = Specific Device Code AA for NCS AC for NCSA M = Date Code = Pb Free Package PIN CONNECTIONS + SC 88A (Top View) ADK M xx M (Note: Microdot may be in either location) V SS NC IN V DD 6 OUT + V DD IN+ OUT UDFN (Top View) ORDERING INFORMATION Device Package Shipping NCSSQTG NCSMUTAG, NCSAMUTAG SC 88A (Pb Free) UDFN6 (Pb Free) / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, October, Rev. 9 Publication Order Number: NCS/D

2 NCS, NCSA MAXIMUM RATINGS Symbol Rating Value Unit V DD Supply Voltage 6. V V ID Input Differential Voltage Supply Voltage V V I Input Common Mode Voltage Range. V to (V DD +. V) V I I Maximum Input Current ma I O Output Current Range ma Continuous Total Power Dissipation (Note ) mw T J Maximum Junction Temperature C JA Thermal Resistance C/W T stg Operating Temperature Range (free air) to C T stg Storage Temperature 6 to C Mounting Temperature (Infrared or Convection sec) 6 C V ESD Machine Model Human Body Model V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of C. Output currents in excess of ma over long term may adversely affect reliability. Shorting output to either V+ or V will adversely affect reliability. DC ELECTRICAL CHARACTERISTICS (V DD =. V,. V, V and V, T A = C, R L k unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Input Offset Voltage V IO VIC = V DD /, V O = V DD /, R L = k, R S =.. mv (NCS) T A = C to + C 7. Input Offset Voltage (NCSA) V IO VIC = V DD /, V O = V DD /, R L = k, R S =. mv T A = C to + C. Offset Voltage Drift ICV OS VIC = V DD /, V O = V DD /, R L = k, R S =. V/ C Common Mode Rejection Ratio Power Supply Rejection Ratio Large Signal Voltage Gain CMRR V VIC V DD. V, R S = V DD =. V 9 db T A = C to + C V VIC V DD. V, R S = V DD = V 6 T A = C to + C 6 V VIC V DD. V, R S = V DD = V 69 T A = C to + C 66 PSRR V DD =. V to 6 V, VIC = V DD /, No Load 7 db T A = C to + C 6 A VD V O(pp) = V DD /, R L = k V DD =. V 9 db T A = C to + C 76 V O(pp) = V DD /, R L = k V DD =. V 9 T A = C to + C 76 V O(pp) = V DD /, R L = k V DD = V 9 7 T A = C to + C 86 V O(pp) = V DD /, R L = k V DD = V 9 T A = C to + C 9

3 NCS, NCSA DC ELECTRICAL CHARACTERISTICS (V DD =. V,. V, V and V, T A = C, R L k unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Input Bias Current I B V DD = V, VIC = V DD /, V O = V DD /, R S = Input Offset Current I IO V DD = V, VIC = V DD /, V O = V DD /, R S = Differential Input Resistance T A = C pa T A = C T A = C pa T A = C r i(d) G Common mode Input Capacitance Output Swing (High level) Output Swing (Low level) C IC f = khz 8. pf V OH VIC = V DD /, I OH = ma V DD =. V.. V T A = C to + C.8 VIC = V DD /, I OH = ma V DD =. V.. T A = C to + C. VIC = V DD /, I OH = ma V DD = V.8.9 T A = C to + C.7 VIC = V DD /, I OH = ma V DD = V.9.96 T A = C to + C.9 VIC = V DD /, I OH = ma V DD =. V.7. V T A = C to + C. VIC = V DD /, I OH = ma V DD =. V..89 T A = C to + C. VIC = V DD /, I OH = ma V DD = V..68 T A = C to + C. VIC = V DD /, I OH = ma V DD = V.7.78 T A = C to + C.6 V OL VIC = V DD /, I OL = ma V DD =. V.. V T A = C to + C. VIC = V DD /, I OL = ma V DD =. V.. T A = C to + C. VIC = V DD /, I OL = ma V DD = V.. T A = C to + C. VIC = V DD /, I OL = ma V DD = V..8 T A = C to + C. VIC = V DD /, I OL = ma V DD =. V..7 V T A = C to + C. VIC = V DD /, I OL = ma V DD =. V..7 T A = C to + C. VIC = V DD /, I OL = ma V DD = V.. T A = C to + C. VIC = V DD /, I OL = ma V DD = V.6. T A = C to + C.

4 NCS, NCSA DC ELECTRICAL CHARACTERISTICS (V DD =. V,. V, V and V, T A = C, R L k unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Output Current I O V O =. V from rail, V DD =. V Positive rail. ma Power Supply Quiescent Current Negative rail. V O =. V from rail, V DD = V Positive rail 7. Negative rail 8. V O =. V from rail, V DD = V Positive rail Negative rail I DD V O = V DD / V DD =. V 8 6 A V DD =. V 8 6 V DD = V 9 66 V DD = V 8 T A = C to + C AC ELECTRICAL CHARACTERISTICS (V DD =. V, V, & V, T A = C, and R L k unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Unity Gain Bandwidth UGBW R L = k, C L = pf V DD =. V. MHz V DD = V to V. Slew Rate at Unity Gain SR V O(pp) = V DD /, R L = k, C L = pf V DD =. V.. V/ S T A = C to + C V O(pp) = V DD /, R L = k, C L = pf V DD = V.. T A = C to + C. V O(pp) = V DD /, R L = k, C L = pf V DD = V.8.6 T A = C to + C. Phase Margin m R L = k, C L = pf Gain Margin R L = k, C L = pf db Settling Time to.% t S V step(pp) = V, AV =, R L = k, C L = pf V DD =. V.9 S V step(pp) = V, AV =, R L = k, C L = 68 pf V DD = V, V. Total Harmonic Distortion plus Noise Input Referred Voltage Noise Input Referred Current Noise THD+N V DD =. V, V O(pp) = V DD /, R L = k, f = khz V DD = V, V, V O(pp) = V DD /, R L = k, f = khz AV =. % AV =. AV =. AV =. AV =. AV =. e n f = khz nv/ Hz f = khz i n f = khz.6 fa/ Hz

5 NCS, NCSA CMRR (db) 6 7 R L = k C. V.7 V V 8 V 9 k k k M INPUT BIAS AND OFFSET CURRENT (pa) Input Bias Input Offset LOW LEVEL OUTPUT VOLTAGE (V)... FREQUENCY (Hz) Figure. CMRR vs. Frequency V DD =. V C C C HIGH LEVEL OUTPUT VOLTAGE (V)... FREE AIR TEMPERATURE ( C) Figure. Input Bias and Offset Current vs. Temperature C C C V DD =. V LOW LEVEL OUTPUT CURRENT (ma) LOW LEVEL OUTPUT CURRENT (ma) Figure.. V V OL vs. I out Figure.. V V OH vs. I out LOW LEVEL OUTPUT VOLTAGE (V). V DD =. V.7 C. C..8. C LOW LEVEL OUTPUT CURRENT (ma) Figure.. V V OL vs. I out HIGH LEVEL OUTPUT VOLTAGE (V). V DD =. V.7.. C.8. C..9.6 C HIGH LEVEL OUTPUT CURRENT (ma) Figure 6.. V V OH vs. I out

6 NCS, NCSA LOW LEVEL OUTPUT VOLTAGE (V) V DD =. V C C C HIGH LEVEL OUTPUT VOLTAGE (V) V DD =. V C C C LOW LEVEL OUTPUT CURRENT (ma) HIGH LEVEL OUTPUT CURRENT (ma) Figure 7. V OL vs. I out Figure 8. V OH vs. I out LOW LEVEL OUTPUT VOLTAGE (V) V DD = V C C C HIGH LEVEL OUTPUT VOLTAGE (V) C C C V DD = V 9 LOW LEVEL OUTPUT CURRENT (ma) HIGH LEVEL OUTPUT CURRENT (ma) Figure 9. V V OL vs. I out Figure. V V OH vs. I out V out P P (V) AV = V DD = V R L = k C L = pf 9 T A = C 8 THD = % 7 6 V DD = V V DD =.7 V V DD =. V.. k k SUPPLY CURRENT / Ch ( A) C C C 6 8 FREQUENCY (khz) SUPPLY VOLTAGE (V) Figure. Peak to Peak Output vs. Supply vs. Frequency Figure. Supply Current vs. Supply Voltage 6

7 NCS, NCSA PSRR (db) R L = k, Input = mv pp, AV =, V DD =. V to V, T A = C k k k FREQUENCY (Hz) Figure. PSRR vs. Frequency OPEN LOOP GAIN (db) 8 6 Gain V Gain V Phase V Phase.7 V Phase V Gain.7 V k k k M M FREQUENCY (Hz) Figure. Open Loop Gain and Phase vs. Frequency 8 9 PHASE MARGIN ( C). C C FREQUENCY (MHz)...7 V R L = k C L = pf V V. V 6 8 TEMPERATURE ( C) Figure. Gain Bandwidth Product vs. Temperature SLEW RATE (V/ s) C C C C.... SUPPLY VOLTAGE (V) Figure 6. Slew Rate vs. Supply Voltage 7

8 NCS, NCSA SLEW RATE (V/ s) SR V SR+ V SR+.7 V SR V SR.7 V SR+ V VOLTAGE NOISE (nv Hz) k k V S = ±. V V in = GND, Av = RTI FREE AIR TEMPERATURE ( C) Figure 7. Slew Rate vs. Temperature k k k FREQUENCY (Hz) Figure 8. Voltage Noise vs. Frequency V S = ±. V Av = R L = k V S = +. V Av = + R L = k mv/div mv/div ns/div Figure 9.. V Inverting Large Signal Pulse Response ns/div Figure.. V Non Inverting Large Signal Pulse Response V S = ±. V Av = R L = k V S = +. V Av = + R L = k mv/div mv/div ns/div Figure.. V Inverting Small Signal Pulse Response ns/div Figure.. V Non Inverting Small Signal Pulse Response 8

9 NCS, NCSA V S = ±. V Av = R L = k V S = + V Av = + R L = k mv/div mv/div ns/div Figure. V Inverting Large Signal Pulse Response ns/div Figure. V Non Inverting Large Signal Pulse Response V S = ±. V Av = R L = k V S = + V Av = + R L = k mv/div mv/div ns/div Figure. V Inverting Small Signal Pulse Response ns/div Figure 6. V Non Inverting Small Signal Pulse Response V S = ± V Av = R L = k V S = +6 V Av = + R L = k mv/div mv/div ns/div Figure 7. 6 V Inverting Large Signal Pulse Response ns/div Figure 8. 6 V Non Inverting Large Signal Pulse Response 9

10 NCS, NCSA V S = +6 V Av = R L = k V S = +6 V Av = + R L = k mv/div mv/div ns/div Figure 9. 6 V Inverting Small Signal Pulse Response ns/div Figure. 6 V Non Inverting Small Signal Pulse Response

11 NCS, NCSA APPLICATIONS k R. k V DD MC R. V NCS + V DD V O V O. V( R R ) V ref V ref V DD k R V DD NCS + R C C V O f O RC For: f o =. khz R = 6 k C =. F Figure. Voltage Reference Figure. Wien Bridge Oscillator V DD V in R C C R C O R Hysteresis R NCS + V ref V O CO = C V ref V in V OH R + V O NCS V O V OL V inl V inh V in L R R R V in H R R R H R R R V ref (V OL V ref) V ref (V OH V ref) V ref (V OH V OL ) Figure. Comparator with Hysteresis Given: f o = center frequency A(f o ) = gain at center frequency Choose value f o, C Then : R Q f O C R R A(f O ) R R R Q R R For less than % error from operational amplifier, ((Q O f O )/BW) <. where f o and BW are expressed in Hz. If source impedance varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. Figure. Multiple Feedback Bandpass Filter

12 NCS, NCSA PACKAGE DIMENSIONS SC 88A (SC 7 /SOT ) CASE 9A ISSUE L S A G B D PL. (.8) M B M N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. 9A OBSOLETE. NEW STANDARD 9A.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B.... C...8. D.... G.6 BSC.6 BSC H J.... K.... N.8 REF. REF S C J H K SOLDER FOOTPRINT SCALE : mm inches

13 NCS, NCSA PACKAGE DIMENSIONS UDFN6.6x.6,.P CASE 7AP ISSUE O 6X X. C PIN ONE REFERENCE X. C. C D ÉÉ DETAIL B. C DETAIL A 6X L TOP VIEW SIDE VIEW A D A B E (A) A C SEATING PLANE L EXPOSED Cu A L DETAIL A OPTIONAL CONSTRUCTION ÉÉÉ DETAIL B OPTIONAL CONSTRUCTION MOLD CMPD A NOTES:. DIMENSIONING AND TOLERANCING PER ASME Y.M, 99.. CONTROLLING DIMENSION: MILLIMETERS.. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN. AND. mm FROM TERMINAL.. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS DIM MIN MAX A.. A.. A. REF b.. D.6 BSC E.6 BSC e. BSC D.. E..6 K. L.. L.. SOLDERMASK DEFINED MOUNTING FOOTPRINT*.6 E 6X K 6 e BOTTOM VIEW 6X b. C A B. C NOTE 6X PITCH 6X. DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Denver, Colorado 87 USA Phone: 67 7 or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 79 9 Japan Customer Focus Center Phone: 8 87 ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative NCS/D

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output

NCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output

More information

LM321. Single Channel Operational Amplifier

LM321. Single Channel Operational Amplifier Single Channel Operational Amplifier LM32 is a general purpose, single channel op amp with internal compensation and a true differential input stage. This op amp features a wide supply voltage ranging

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package

NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.

7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints. 2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power

More information

NTLUF4189NZ Power MOSFET and Schottky Diode

NTLUF4189NZ Power MOSFET and Schottky Diode NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

LM339S, LM2901S. Single Supply Quad Comparators

LM339S, LM2901S. Single Supply Quad Comparators LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features

More information

P2I2305NZ. 3.3V 1:5 Clock Buffer

P2I2305NZ. 3.3V 1:5 Clock Buffer 3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes , Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors

More information

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m

NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (

More information

NCP ma, 10 V, Low Dropout Regulator

NCP ma, 10 V, Low Dropout Regulator 15 ma, 1 V, Low Dropout Regulator The is a CMOS Linear voltage regulator with 15 ma output current capability. The device is capable of operating with input voltages up to 1 V, with high output voltage

More information

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75 Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N

More information

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88 NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

More information

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.

NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)

More information

NCS MHz Voltage Feedback Op Amp

NCS MHz Voltage Feedback Op Amp 75 MHz Voltage Feedback Op Amp NCS255 is a 75 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture

More information

NSQA6V8AW5T2 Series Transient Voltage Suppressor

NSQA6V8AW5T2 Series Transient Voltage Suppressor Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m

NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise

More information

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

More information

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features. MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

More information

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

More information

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface

More information

NCP304A. Voltage Detector Series

NCP304A. Voltage Detector Series Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where

More information

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features

NVTFS4C13N. Power MOSFET. 30 V, 9.4 m, 40 A, Single N Channel, 8FL Features NVTFS4C3N Power MOSFET 3 V, 9.4 m, 4 A, Single N Channel, 8FL Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

More information

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device

NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC

More information

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low

More information

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

More information

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer . V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

More information

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

More information

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23 NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint

More information

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k MUN224, MMUN224L, MUN524, DTC4YE, DTC4YM, NSBC4YF Digital Transistors (BRT) R = 0 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL

NTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices

More information

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel

NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k MUN22, MMUN22L, MUN52, DTC44EE, DTC44EM, NSBC44EF Digital Transistors (BRT) R = 47 k, R2 = 47 k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual

NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance

More information

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching

More information

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23

NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23 NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device

P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE

More information

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel

NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen

More information

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site

More information

NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability

NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable

More information

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices

More information

NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems

More information

NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability

NS5S1153. DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability DPDT USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NS5S1153 is a DPDT switch for combined true ground audio and USB 2.0 high speed data applications. It allows portable systems to

More information

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70 NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications

More information

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection 4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver

More information

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k MUN, MMUNL, MUN5, DTA4EE, DTA4EM, NSBA4EF Digital Transistors (BRT) R = 4.7 k, R = 4.7 k PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace

More information

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3

NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,

More information

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75 NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant

More information

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high

More information

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and

More information

NB2879A. Low Power, Reduced EMI Clock Synthesizer

NB2879A. Low Power, Reduced EMI Clock Synthesizer Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic

More information

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.

More information

NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches

NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.

More information

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package

NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution

More information

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection

NCP A, Low Dropout Linear Regulator with Enhanced ESD Protection 3.0 A, Low Dropout Linear Regulator with Enhanced ESD Protection The NCP5667 is a high performance, low dropout linear regulator designed for high power applications that require up to 3.0 A current. A

More information

NLAS6234. Audio DPDT Switch with Noise Suppression

NLAS6234. Audio DPDT Switch with Noise Suppression Audio DPDT Switch with Noise Suppression Description The NLAS6234 is a DPDT switch featuring Popless noise suppression circuitry designed to prevent pass through of undesirable transient signals known

More information

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier

MC Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier MC3334 Low Voltage Rail-To-Rail Sleep Mode Operational Amplifier The MC3334 is a monolithic bipolar operational amplifier. This low voltage rail to rail amplifier has both a rail to rail input and output

More information

Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

More information

NCP ma, Wide Input Voltage Range, Low Dropout Regulator

NCP ma, Wide Input Voltage Range, Low Dropout Regulator 5 ma, Wide Input Voltage Range, Low Dropout Regulator The NCP4623 is a CMOS Linear Voltage Regulator designed for wide input voltage range. The maximum operating input voltage is up to 24 V with a minimum

More information

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver

More information

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70

NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70 NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint

More information

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features BC846ALTG Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level: ESD Rating Human Body Model: >4 V ESD Rating Machine Model: >4 V S and NSV Prefix for Automotive and Other

More information

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8 NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

More information

NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch

NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),

More information

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed

More information

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection

MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for

More information

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features

NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky

More information

BC846BM3T5G. General Purpose Transistor. NPN Silicon

BC846BM3T5G. General Purpose Transistor. NPN Silicon General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter

More information

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS

P SUFFIX CASE 646 Single Supply Split Supplies SO-14 D SUFFIX CASE 751A PIN CONNECTIONS Dual Operational Amplifier and Dual Comparator The MC05 contains two differential-input operational amplifiers and two comparators, each set capable of single supply operation. This operational amplifier-comparator

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor

More information

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

UMC2NT1, UMC3NT1, UMC5NT1

UMC2NT1, UMC3NT1, UMC5NT1 UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor

More information

NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel

NTMFS5H409NL. Power MOSFET. 40 V, 1.1 m, 270 A, Single N Channel Power MOSFET 4 V,. m, 7 A, Single N Channel Features Small Footprint (5x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These evices are

More information

NLHV18T Channel Level Shifter

NLHV18T Channel Level Shifter 18-Channel Level Shifter The NLHV18T3244 is an 18 channel level translator designed for high voltage level shifting applications such as displays. The 18 channels are divided into twelve and two three

More information

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf

More information

NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D

NLAS323. Dual SPST Analog Switch, Low Voltage, Single Supply A4 D Dual SPST Analog Switch, Low Voltage, Single Supply The NLAS323 is a dual SPST (Single Pole, Single Throw) switch, similar to /2 a standard 466. The device permits the independent selection of 2 analog/digital

More information

NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel

NTMFS5C604NL. Power MOSFET. 60 V, 1.2 m, 276 A, Single N Channel NTMFSC64NL Power MOSFET 6 V,. m, 76 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses These

More information

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF

More information