NCV1009ZG. 2.5 Volt Reference
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- Myron Lane
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1 V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by onchip trimming which minimizes voltage tolerance and temperature drift. A third terminal allows the reference voltage to be adjusted ±5.% to calibrate out system errors. In many applications, the V9Z can be used as a pintopin replacement of the LT9CZ and the LM36Z2.5 with the external trim network eliminated. Features.2% Initial Tolerance Max. Guaranteed Temperature Stability Maximum.6 Dynamic Impedance Wide Operating Current Range Directly Interchangeable with LT9 and LM36 for Improved Performance No Adjustments Needed for Minimum Temperature Coefficient Meets Mil Std 883C ESD Requirements Extended Operating Temperature Range for Use in Automotive Applications V Prefix, for Automotive and Other Applications Requiring Site and Change Control PbFree Packages are Available 8 A = Assembly Location L = Wafer Lot Y = Year WW, W = Work Week = PbFree Package GND SOIC8 D SUFFIX CASE 75 TO92 Z SUFFIX CASE 29 PIN CONNECTIONS 8 MARKING DIAGRAMS 8 9D ALYW 9Z ALYWW (Note: Microdot may be in either location) V REF ADJ. PIN 5. V35 V 3.6 k V REF ADJ GND k TRIM V9D Device Package Shipping V9DR2 2 3 Pin ORDERING INFORMATION SOIC8 SOIC8. ADJ. PIN 2. V REF 3. GND 95 Units/Rail 25 Tape & Reel *±5.% Trim Range If the external trim resistor is not used, the ADJ. PIN should be left floating. The k trim potentiometer does not effect the temperature coefficient of the device. Figure. Application Diagram V9DR2G V9Z V9ZG SOIC8 (PbFree) TO92 TO92 (PbFree) 25 Tape & Reel 2 Units/Rail 2 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 26 February, 26 Rev. 9 Publication Order Number: V9/D
2 V9 V REF pf P3 N4 N6 5 pf P 4 k P2 TRIM 2 k 2 k 2 pf.5 k N N2 N5 N3 N6 N4 63 k N9 N7 N8 N2 N.4 k.4 k N3 N 3 k k N5 D ADJ SUBSTRATE GND Figure 2. Block Diagram 2
3 V9 MAXIMUM RATINGS* Rating Value Unit Reverse Current 2 ma Forward ma Package Thermal Resistance, SOIC8: JunctiontoCase, R JC JunctiontoAmbient, R JA Package Thermal Resistance, TO92: JunctiontoCase, R JC JunctiontoAmbient, R JA Operating Temperature Range 4 to +25 C Storage Temperature Range 65 to +5 C Lead Temperature Soldering: Wave Solder (through hole styles only) (Note ) Reflow: (SMD styles only) (Notes 2, 3) 26 peak 24 peak Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *The maximum package power dissipation must be observed.. second maximum 2. 6 second maximum above 83 C C / + C allowable conditions. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Reverse Breakdown Voltage I R =. ma V Reverse Breakdown Voltage 4 C T A 25 C V C C Reverse Breakdown Voltage Change with Current 4 A I R ma (Note 4) mv mv Reverse Dynamic Impedance I R =. ma (Note 4) Temperature Stability Average Temperature Coefficient C T A 7 C, (Note 5) C T A 7 C, (Note 5).8 5 mv ppm/ C Long Term Stabilty T A = 25 C ±. C, I R =. ma 2 ppm/khr 4. Denotes the specifications which apply over full operating temperature range. 5. Average temperature coefficient is defined as the total voltage change divided by the specified temperature range. 3
4 REVERSE CURRENT (A) V9 TYPICAL PERFORMAE CHARACTERISTICS REVERSE VOLTAGE CHANGE (mv) T J = 25 C REVERSE VOLTAGE (V) REVERSE CURRENT (ma) Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Change in Reverse Voltage vs. Reverse Current FORWARD VOLTAGE (V) T J = 25 C DYNAMIC IMPEDAE () FORWARD CURRENT (ma) Figure 5. Forward Voltage vs. Forward Current. k k k FREQUEY (Hz) Figure 6. Dynamic Impedance vs. Frequency FORWARD VOLTAGE (V) NOISE (nv/ HZ) I R = ImA T J = 25 C 5. k k k FREQUEY (Hz) Figure 7. Zener Noise Voltage vs. Frequency VOLTAGE SWING (V) k INPUT OUTPUT 2 TIME (s) Figure 8. Response Time 4
5 V9 PACKAGE DIMENSIONS SOIC8 CASE 757 ISSUE AG Y B X 8 A 5 4 S.25 (.) M Y M K NOTES:. DIMENSIONING AND TOLERAING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT ILUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT ILUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 756 ARE OBSOLETE. NEW STANDARD IS 757. Z H G D C.25 (.) M Z Y S X S SEATING PLANE. (.4) N X 45 M J MILLIMETERS IHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M 8 8 N S SOLDERING FOOTPRINT* SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 5
6 V9 PACKAGE DIMENSIONS TO92 CASE 29 ISSUE AL SEATING PLANE R A X X H V G P N B L K C D J SECTION XX NOTES:. DIMENSIONING AND TOLERAING PER ANSI Y4.5M, CONTROLLING DIMENSION: IH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UONTROLLED. 4. LEAD DIMENSION IS UONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. IHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 632, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. V9/D
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