CS1124. Dual Variable Reluctance Sensor Interface IC
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1 Dual VariableReluctance Sensor Interface IC The CS1124 is a monolithic integrated circuit designed primarily to condition signals used to monitor rotating parts. The CS1124 is a dual channel device. Each channel interfaces to a Variable Reluctance Sensor, and monitors the signal produced when a metal object is moved past that sensor. An output is generated that is a comparison of the input voltage and the voltage produced at the IN Adj lead. The resulting squarewave is available at the OUT pin. When the DIAG pin is high, the reference voltage at IN Adj is increased. This then requires a larger signal at the input to trip the comparator, and provides for a procedure to test for an open sensor. Features Dual Channel Capability BuiltIn Test Mode OnChip Input Voltage Clamping Works from 5.0 V Supply Accurate BuiltIn Hysteresis PbFree Packages are Available R1 R RS DIAG IN1 C1 INP1 Active Clamp IN Adj + COMP1 OUT1 To P CS1124 A L Y W SOIC8 CASE 751 MARKING DIAGRAM CS112 ALYW4 = Device Code = Assembly Location = Wafer Lot = Year = Work Week = PbFree Package V RS Variable Reluctance Sensor R2 R RS IN2 C2 INP2 Active Clamp + COMP2 OUT2 To P PIN CONNECTIONS IN Adj IN1 IN2 GND 1 8 OUT1 OUT2 DIAG V RS Variable Reluctance Sensor R Adj GND ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Figure 1. Block Diagram Semiconductor Components Industries, LLC, 2006 February, 2006 Rev. 8 1 Publication Order Number: CS1124/D
2 MAXIMUM RATINGS Rating Value Unit Storage Temperature Range 65 to 150 C Ambient Operating Temperature 40 to 125 C Supply Voltage Range (continuous) 0.3 to 7.0 V Input Voltage Range (at any input, R1 = R2 = 22 k) 250 to 250 V Maximum Junction Temperature 150 C ESD Susceptibility (Human Body Model) 2.0 kv Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) 230 peak C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected second maximum above 183 C. ELECTRICAL CHARACTERISTICS (4.5 V < < 5.5 V, 40 C < T A < 125 C, V DIAG = 0; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit SUPPLY Operating Current Supply = 5.0 V 5.0 ma Sensor Inputs Input Threshold Positive V DIAG = Low V DIAG = High mv mv Input Threshold Negative V DIAG = Low V DIAG = High mv mv Input Bias Current (INP1, INP2) V IN = V A Input Bias Current (DIAG) V DIAG = 0 V 1.0 A Input Bias Current Factor (K I ) (IN Adj = INP K I ) V IN = V, V DIAG = Low V IN = V, V DIAG = High %INP %INP Bias Current Matching INP1 or INP2 to IN Adj, V IN = V A Input Clamp Negative I IN = 50 A I IN = 12 ma V V Input Clamp Positive I IN = +12 ma V Output Low Voltage I OUT = 1.6 ma V Output High Voltage I OUT = 1.6 ma V Mode Change Time Delay 0 20 s Input to Output Delay I OUT = 1.0 ma s Output Rise Time C LOAD = 30 pf s Output Fall Time C LOAD = 30 pf s OpenSensor Positive Threshold V DIAG = High, R IN(Adj) = 40 k. Note k Logic Inputs DIAG Input Low Threshold 0.2 V DIAG Input High Threshold 0.7 V DIAG Input Resistance V IN = 0.3, = 5.0 V V IN =, = 5.0 V k k 2. This parameter is guaranteed by design, but not parametrically tested in production. 2
3 PACKAGE PIN DESCRIPTION PIN # SOIC8 PIN SYMBOL FUNCTION 1 IN Adj External resistor to ground that sets the trip levels of both channels. Functions for both diagnostic and normal mode 2 IN1 Input to channel 1 3 IN2 Input to channel 2 4 GND Ground 5 DIAG Diagnostic mode switch. Normal mode is low 6 OUT2 Output of channel 2 7 OUT1 Output of channel 1 8 Positive 5.0 volt supply input ORDERING INFORMATION Device Package Shipping CS1124YD8 SOIC8 NB 96 Units / Rail CS1124YD8G SOIC8 NB (PbFree) 96 Units / Rail CS1124YDR8 SOIC8 NB 96 Units / Rail CS1124YDR8G SOIC8 NB (PbFree) 96 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. R1 R RS DIAG C1 IN1 INP1 Active Clamp IN Adj + COMP1 OUT1 To P V RS Variable Reluctance Sensor GND R Adj Figure 2. Application Diagram 3
4 THEORY OF OPERATION NORMAL OPERATION Figure 2 shows one channel of the CS1124 along with the necessary external components. Both channels share the IN Adj pin as the negative input to a comparator. A brief description of the components is as follows: V RS Ideal sinusoidal, ground referenced, sensor output amplitude usually increases with frequency, depending on loading. R RS Source impedance of sensor. R1/R Adj External resistors for current limiting and biasing. INP1/IN Adj Internal current sources that determine trip points via R1/R Adj. COMP1 Internal comparator with builtin hysteresis set at 160 mv. OUT1 Output 0 V 5.0 V square wave with the same frequency as V RS. By inspection, the voltage at the (+) and () terminals of COMP1 with V RS = 0V are: V+ INP1(R1 RRS) (1) V INAdj RAdj (2) As V RS begins to rise and fall, it will be superimposed on the DC biased voltage at V +. V+ INP1(R1 RRS) VRS (3) To get comparator COMP1 to trip, the following condition is needed when crossing in the positive direction, V+ V VHYS (4) (V HYS is the builtin hysteresis set to 160 mv), or when crossing in the negative direction, V+ V VHYS (5) Combining equations 2, 3, and 4, we get: INP1(R1 RRS) VRS INAdj RAdj VHYS (6) therefore, VRS(+TRP) INAdj RAdj INP1(R1 RRS) VHYS (7) It should be evident that tripping on the negative side is: VRS(TRP) INAdj RAdj INP1(R1 RRS) VHYS (8) In normal mode, We can now rewrite equation (7) as: INP1 INAdj (9) VRS(+TR) INP1(RAdj R1 RRS) VHYS (10) By making RAdj R1 RRS (11) you can detect signals with as little amplitude as V HYS. A design example is given in the applications section. OPEN SENSOR PROTECTION The CS1124 has a DIAG pin that when pulled high (5.0 V), will increase the IN Adj current source by roughly 50%. Equation (7) shows that a larger V RS(+TRP) voltage will be needed to trip comparator COMP1. However, if no V RS signal is present, then we can use equations 1, 2, and 4 (equation 5 does not apply in this mode) to get: INP1(R1 RRS) INP1 KI RAdj VHYS (12) Since R RS is the only unknown variable we can solve for R RS, RRS INP1 K I RAdj VHYS R1 (13) INP1 Equation (13) shows that if the output switches states when entering the diag mode with V RS = 0, the sensor impedance must be greater than the above calculated value. This can be very useful in diagnosing intermittent sensor. INPUT PROTECTION As shown in Figure 2, an active clamp is provided on each input to limit the voltage on the input pin and prevent substrate current injection. The clamp is specified to handle ±12 ma. This puts an upper limit on the amplitude of the sensor output. For example, if R1 = 20 k, then VRS(MAX) 20 k 12 ma 240 V Therefore, the V RS(pkpk) voltage can be as high as 480 V. The CS1124 will typically run at a frequency up to 1.8 MHz if the input signal does not activate the positive or negative input clamps. Frequency performance will be lower when the positive or negative clamps are active. Typical performance will be up to a frequency of 680 khz with the clamps active. 4
5 CIRCUIT DESCRIPTION Figure 3 shows the part operating near the minimum input thresholds. As the sin wave input threshold is increased, the low side clamps become active (Figure 4). Increasing the amplitude further (Figure 5), the highside clamp becomes active. These internal clamps allow for voltages up to 250 V and 250 V on the sensor side of the setup (with R1 = R2 = 22 k) (reference the diagram page 1). Figure 6 shows the effect using the diagnostic (DIAG) function has on the circuit. The input threshold (negative) is switched from a threshold of 160 mv to +160 mv when DIAG goes from a low to a high. There is no hysteresis when DIAG is high. IN1, 200 mv/div OUT1, 2.0 V/div IN1, 5.0 V/div 20 ms/div Figure 5. Low and HighSide Clamps DIAG 5.0 V/div OUT1, 2.0 V/div IN1 1.0 V/div 20 ms/div Figure 3. Minimum Threshold Operation OUT1 5.0 V/div OUT1, 2.0 V/div IN1, 5.0 V/div 20 ms/div Figure 6. Diagnostic Operation 20 ms/div Figure 4. LowSide Clamp 5
6 APPLICATION INFORMATION Referring to Figure 2, the following will be a design example given these system requirements: RRS 1.5 k ( 12 k is considered open) VRS(MAX) 120 Vpk VRS(MIN) 250 mvpk FVRS 10 VRS(MIN) 40 Vpkpk 1. Determine tradeoff between R1 value and power rating. (use 1/2 watt package) PD 1 2 W R1 Set R1 = 15 k. (The clamp current will then be 120/15 k = 8.0 ma, which is less than the 12 ma limit.) 2. Determine R Adj Set R Adj as close to R1 + R RS as possible. Therefore, R Adj = 17 k. 3. Determine V RS(+TRP) using equation (7). VRS(+TRP) 11 A 17 k 11 A(15 k 1.5 k) 160 m VRS(+TRP) 166 mv typical (easily meets 250 mv minimum) 4. Calculate worst case V RS(+TRP) Examination of equation (7) and the spec reveals the worst case trip voltage will occur when: V HYS = 180 mv IN Adj = 16 A INP1 = 15 A R1 = k (5% low) R Adj = k (5% High) VRS(+)MAX 16 A(17.85 k) 15 A(14.25 k 1.5 k) 180 mv 229 mv which is still less than the 250 mv minimum amplitude of the input. 5. Calculate C1 for low pass filtering Since the sensor guarantees 40 V 10 khz, a low pass filter using R1 and C1 can be used to eliminate high frequency noise without affecting system performance. Gain Reduction 0.29 V 20 V db Therefore, a cutoff frequency, f C, of 145 Hz could be used. Set C1 = F. C F 2 fcr1 6. Calculate the minimum R RS that will be indicated as an open circuit. (DIAG = 5.0 V) Rearranging equation (7) gives V HYS [INP1 KI RAdj] VRS(+TRP) RRS R1 INP1 But, V RS = 0 during this test, so it drops out. Using the following as worst case Low and High: Worst Case Low (R RS ) Worst Case High (R RS ) IN Adj 23.6 A = 15 A A = 7.0 A 1.53 R Adj k k V HYS 135 mv 185 mv INP1 16 A 6.0 A R k k K I and, 135 mv 23.6 A k RRS k 16 A 16.5 k Therefore, RRS(MIN) 16.5 k (meets 12 k system spec) 185 mv 10.7 A k RRS(MAX) k 6.0 A 48.4 k 6
7 PACKAGE DIMENSIONS SOIC8 NB CASE ISSUE AG X B Y Z H 8 1 G A D 5 4 S C 0.25 (0.010) M Z Y S X S 0.25 (0.010) M SEATING PLANE Y 0.10 (0.004) M N X 45 M K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU ARE OBSOLETE. NEW STANDARD IS MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G 1.27 BSC BSC H J K M N S SOLDERING FOOTPRINT* SCALE 6:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE THERMAL DATA Parameter SOIC8NB Unit R JC Typical 45 C/W R JA Typical 165 C/W 7
8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. CS1124/D
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MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
BS107, BS107A. Small Signal MOSFET 250 mamps, 200 Volts N Channel TO ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.
Preferred Device Small Signal MOSFET 250 mamps, 200 Volts NChannel Features PbFree Package is Available* 250 ma, 200 V R DS(on) = 14 (BS107) R DS(on) = 6.4 (BS107A) MAXIMUM RATINGS Rating Symbol Value
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors
EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
MJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
TCA0372, TCA0372B. 1.0 A Output Current, Dual Power Operational Amplifiers
.0 A Output Current, Dual Power Operational Amplifiers The TCA0372 is a monolithic circuit intended for use as a power operational amplifier in a wide range of applications, including servo amplifiers
NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V
NGD8NCLB Ignition IGBT 8 Amps, Volts N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection for use in
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
MPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS
MPS65, MPS65, MPS, MPS, MPS65 and MPS are Preferred Devices Amplifier Transistors Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol MPS65 MPS MPS65 MPS Unit Collector Emitter Voltage
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS
Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and
NTHD2102PT1G. Power MOSFET. 8.0 V, 4.6 A Dual P Channel ChipFET
NTHDP Power MOSFET. V,. A Dual PChannel ChipFET Features Offers an Ultra Low R DS(on) Solution in the ChipFET Package Miniature ChipFET Package % Smaller Footprint than TSOP making it an Ideal Device for
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MPSA13, MPSA14. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc Collector
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
MD9 (PNP) MD3 (NPN) ÎÎ ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) ÎÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS Î Col
MD9 (PNP) MD3 (NPN) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount Applications
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
NTGS3443T1. Power MOSFET 2 Amps, 20 Volts. P Channel TSOP 6. 2 AMPERES 20 VOLTS R DS(on) = 65 m
NTGST Power MOSFET, Volts PChannel TSOP Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Miniature TSOP Surface Mount Package PbFree Package is Available Applications Power Management
MPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
J309, J310. N Channel Depletion. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
J39, Preferred Device JFET VHF/UHF Amplifiers NChannel Depletion Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V DS 25 Vdc Gate Source Voltage V GS