MC34164, MC33164, NCV33164
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1 MC3464, MC3364, NCV3364 Micropower Undervoltage Sensing Circuits The MC3464 series are undervoltage sensing circuits specifically designed for use as reset controllers in portable microprocessor based systems where extended battery life is required. These devices offer the designer an economical solution for low voltage detection with a single external resistor. The MC3464 series features a bandgap reference, a comparator with precise thresholds and builtin hysteresis to prevent erratic reset operation, an open collector reset output capable of sinking in excess of 6. ma, and guaranteed operation down to. V input with extremely low standby current. The MC devices are packaged in 3pin TO226AA, micro size TSOP5, 8pin and surface mount packages. The NCV device is packaged in. Applications include direct monitoring of the 3. V or 5. V MPU/logic power supply used in appliance, automotive, consumer, and industrial equipment. Temperature Compensated Reference Monitors 3. V (MC34643) or 5. V (MC34645) Power Supplies Precise Comparator Thresholds Guaranteed Over Temperature Comparator Hysteresis Prevents Erratic Output Capable of Sinking in Excess of 6. ma Internal Clamp Diode for Discharging Delay Capacitor Guaranteed Operation With. V Input Extremely Low Standby Current: As Low as 9. A Economical TO226AA, TSOP5, and Surface Mount Packages NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes PbFree Packages are Available Input 2 3 TO226AA P SUFFIX CASE 29 8 DM SUFFIX CASE 846A Pin TSOP5 Ground 8 N.C. Input 2 7 N.C. N.C N.C. N.C. (Top View) 8 PIN CONNECTIONS. Ground 2. Input NC 5. NC 5 D SUFFIX CASE 75 TSOP5 SN SUFFIX CASE 483 TO226AA Pin. 2. Input 3. Ground ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet..2 V ref = Sink Only Positive True Logic DEVICE MARKING INFORMATION See general marking information in the device marking section on page 9 of this data sheet. GND Figure. Representative Block Diagram This device contains 28 active transistors. Semiconductor Components Industries, LLC, 25 July, 25 Rev. 5 Publication Order Number: MC3464/D
2 MAXIMUM RATINGS Rating Symbol Value Unit Power Input Supply Voltage V in. to 2 V Output Voltage V O. to 2 V Output Sink Current I Sink Internally Limited Clamp Diode Forward Current, to Input Pin (Note ) IF ma ma Power Dissipation and Thermal Characteristics P Suffix, Plastic Package Maximum Power Thermal Resistance, JunctiontoAir D Suffix, Plastic Package Maximum Power Thermal Resistance, JunctiontoAir DM Suffix, Plastic Package Maximum Power Thermal Resistance, JunctiontoAir P D R JA P D R JA P D R JA mw C/W mw C/W mw C/W Operating Junction Temperature T J +5 C Operating Ambient Temperature Range MC3464 Series MC3364 Series, NCV3364 T A to +7 4 to +25 Storage Temperature Range T stg 65 to +5 C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MC34643, MC33643 SERIES, NCV33643 ELECTRICAL CHARACTERISTICS (For typical values, for min/max values T A is the operating ambient temperature range that applies [Notes 2 & 3], unless otherwise noted.) Characteristic Symbol Min Typ Max Unit COMPARATOR Threshold Voltage V High State Output (V in Increasing) Low State Output (V in Decreasing) Hysteresis (I Sink = A) V IH V IL V H RESET OUTPUT Output Sink Saturation (V in = 2.4 V, I Sink =. ma) (V in =. V, I Sink =.25 ma) Output Sink Current (V in, = 2.4 V) I Sink ma Output OffState Leakage (V in, = 3. V) (V in, = V) V OL I R(leak) Clamp Diode Forward Voltage, to Input Pin (I F = 5. ma) V F V TOTAL DEVICE Operating Input Voltage Range V in. to V Quiescent Input Current V in = 3. V V in = 6. V. Maximum package power dissipation limits must be observed. 2. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 3. T low = C for MC3464 T high = +7 C for MC3464 = 4 C for MC3364, NCV3364 = +25 C for MC3364, NCV3364 I in ESD C V V A A 2
3 MC34645, MC33645 SERIES, NCV33645 ELECTRICAL CHARACTERISTICS (For typical values, for min/max values T A is the operating ambient temperature range that applies [Notes 5 & 6], unless otherwise noted.) Characteristic Symbol Min Typ Max Unit COMPARATOR Threshold Voltage V High State Output (V in Increasing) Low State Output (V in Decreasing) Hysteresis (I Sink = A) V IH V IL V H RESET OUTPUT Output Sink Saturation (V in = 4. V, I Sink =. ma) (V in =. V, I Sink =.25 ma) Output Sink Current (V in, = 4. V) I Sink ma Output OffState Leakage (V in, = 5. V) (V in, = V) V OL I R(leak) Clamp Diode Forward Voltage, to Input Pin (I F = 5. ma) V F V TOTAL DEVICE Operating Input Voltage Range V in. to V Quiescent Input Current V in = 5. V V in = V 4. Maximum package power dissipation limits must be observed. 5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible. 6. T low = C for MC3464 T high = +7 C for MC3464 = 4 C for MC3364, NCV3364 = +25 C for MC3364, NCV NCV prefix is for automotive and other applications requiring site and change control. I in V A A V O, OUTPUT VOLTAGE (V) R L = 82 k to V in V O, OUTPUT VOLTAGE (V) R L = 82 k to V in V in, INPUT VOLTAGE (V) V in, INPUT VOLTAGE (V) Figure 2. MC3X643 Output Voltage versus Input Voltage Figure 3. MC3X645 Output Voltage versus Input Voltage 3
4 5. 5. V O, OUTPUT VOLTAGE (V) R L = 82 k to V in V in, INPUT VOLTAGE (V) V O, OUTPUT VOLTAGE (V) R L = 82 k to V in V in, INPUT VOLTAGE (V) Figure 4. MC3X643 Output Voltage versus Input Voltage Figure 5. MC3X645 Output Voltage versus Input Voltage V in, THRESHOLD VOLTAGE (V) Upper Threshold High State Output Lower Threshold Low State Output V in, THRESHOLD VOLTAGE (V) Lower Threshold Low State Output Upper Threshold High State Output T A, AMBIENT TEMPERATURE ( C) T A, AMBIENT TEMPERATURE ( C) Figure 6. MC3X643 Comparator Threshold Voltage versus Temperature Figure 7. MC3X645 Comparator Threshold Voltage versus Temperature 5 5 I in, INPUT CURRENT ( μ A) T A = C T A = 7 C I in, INPUT CURRENT ( μ A) T A = C T A = 7 C V in, INPUT VOLTAGE (V) V in, INPUT VOLTAGE (V) Figure 8. MC3X643 Input Current versus Input Voltage Figure 9. MC3X645 Input Current versus Input Voltage 4
5 V OL, OUTPUT SATURATION (V) V in = 2.4 V T A = C T A = 7 C T A = 7 C T A = C V OL, OUTPUT SATURATION (V) V in, = 4 V T A = C T A = 7 C T A = 7 C T A = C V Sink, SINK CURRENT (ma) I Sink, SINK CURRENT (ma) Figure. MC3X643 Output Saturation versus Sink Current Figure. MC3X645 Output Saturation versus Sink Current I F, FORWARD CURRENT (ma) V in = V 9% 5. V 4. V % 5.V 4.V V in V in 43k V in = 5. V to 4. V R L = 43 k Ref V F, FORWARD VOLTAGE (V) Figure 2. Clamp Diode Forward Current versus Voltage 5. s/div Figure 3. Delay Time (MC3X645 Shown) Power Supply Input R Microprocessor Circuit C DLY.2 V ref GND t DLY = R CDLY In V th(mpu) V in A time delayed reset can be accomplished with the addition of C DLY. For systems with extremely fast power supply rise times (< 5 ns) it is recommended that the RCDLY time constant be greater than 5. s. V th(mpu) is the microprocessor reset input threshold. Figure 4. Low Voltage Microprocessor 5
6 R H Test Data Power Supply I in V in.2 V ref MC3X645 GND R L V H 4.3 R H +.6 R L Microprocessor Circuit V th(lower) R H x 6 where: R H. k 43 k R L 4.3 k V H (mv) V th (mv) R H ( ) R L (k ) Comparator hysteresis can be increased with the addition of resistor R H. The hysteresis equation has been simplified and does not account for the change of input current I in as V in crosses the comparator threshold (Figure 8). An increase of the lower threshold V th(lower) will be observed due to I in which is typically A at 4.3 V. The equations are accurate to ±% with R H less than. k and R L between 4.3 k and 43 k. Figure 5. Low Voltage Microprocessor With Additional Hysteresis (MC3X645 Shown) Power Supply Input. k Input.2 V ref GND.2 V ref GND Solar Cells Figure 6. Voltage Monitor Figure 7. Solar Powered Battery Charger V CC 4.3V Input 27 R L MTP355EL.2 V ref Overheating of the logic level power MOSFET due to insufficient gate voltage can be prevented with the above circuit. When the input signal is below the 4.3 V threshold of the MC3X645, its output grounds the gate of the L 2 MOSFET. GND MC3X645 Figure 8. MOSFET Low Voltage Gate Drive Protection Using the MC3X645 6
7 ORDERING INFORMATION MC3364D3 MC3364D3G Device Package Shipping 98 Units / Rail MC3364D3R2 MC3364D3R2G NCV3364D3R2* NCV3364D3R2G* MC3364DM3R2 MC3364DM3R2G MC3364P3 MC3364P3G MC3364P3RA MC3364P3RAG MC3364P3RP MC3364P3RPG MC3364D5 MC3364D5G MC3364D5R2 MC3364D5R2G NCV3364D5R2* NCV3364D5R2G* MC3364DM5R2 MC3364DM5R2G MC3364P5 MC3364P5G MC3364P5RA MC3364P5RAG MC3364P5RP MC3364P5RPG MC3464D3 MC3464D3G MC3464D3R2 MC3464D3R2G 25 Units / Tape & Reel 4 Units / Tape & Reel 2 Units / Tape & Reel 2 Units / Pack 98 Units / Rail 25 Units / Tape & Reel 4 Units / Tape & Reel 2 Units / Tape & Reel 98 Units / Rail 25 Units / Tape & Reel 7
8 ORDERING INFORMATION MC3464DM3R2 MC3464DM3R2G Device Package Shipping 4 Units / Tape & Reel MC3464P3 2 Units / Box MC3464P3G 2 Units /Tape & Reel MC3464P3RP 2 Units / Pack MC3464P3RPG MC3464D5 MC3464D5G 2 Units / Tape & Reel 98 Units / Rail MC3464D5R2 25 Units / Tape & Reel MC3464D5R2G 25 Units / Tape & Reel MC3464DM5R2 4 Units / Tape & Reel MC3464DM5R2G MC3464SN5T MC3464SN5TG TSOP5 TSOP5 25 Units / Tape & Reel 3 Units / Tape & Reel MC3464P5 2 Units / Box MC3464P5G MC3464P5RA MC3464P5RAG 2 Units / Tape & Reel 2 Units / Tape & Reel MC3464P5RP 2 Units / Pack MC3464P5RPG 2 Units / Tape & Reel *NCV3364: T low = 4 C, T high = +25 C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 8
9 TSOP5 SN SUFFIX CASE SRCYW D SUFFIX CASE 75 3x64 ALYWy PIN CONNECTIONS AND MARKING DIAGRAMS MC3364DM CASE 846A 8 MIy YWW AWL MC3464DM CASE 846A 8 MCy YWW AWL MC3x64Py CASE 29 MC3x 64Py YWW MC3x64PyRA MC3x64PyRP CASE 29 MC3x 64Py YWW SRC = Device Code x = Device Number 3 or 4 y = Suffix Number 3 or 5 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week = PbFree
10 PACKAGE DIMENSIONS TO226AA P SUFFIX CASE 29 ISSUE AL SEATING PLANE R A X X H V N G P N B L K C D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V
11 PACKAGE DIMENSIONS.5 (.2) S H D L G A C B K J TSOP5 SN SUFFIX PLASTIC PACKAGE CASE 4832 ISSUE D M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. A AND B DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G H J K L M S SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
12 PACKAGE DIMENSIONS D SUFFIX CASE 757 ISSUE AG Y B X 8 A 5 4 S.25 (.) M Y M K NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.5 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.27 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION THRU 756 ARE OBSOLETE. NEW STANDARD IS 757. Z H G D C.25 (.) M Z Y S X S SEATING PLANE. (.4) N X 45 M J MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D G.27 BSC.5 BSC H J K M 8 8 N S SOLDERING FOOTPRINT* SCALE 6: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 2
13 PACKAGE DIMENSIONS DM SUFFIX CASE 846A2 ISSUE F PIN ID K T SEATING PLANE.38 (.5) G A B D 8 PL.8 (.3) M T B S A S C H J L NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED.5 (.6) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED.25 (.) PER SIDE A OBSOLETE, NEW STANDARD 846A2. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C..43 D G.65 BSC.26 BSC H J K L SOLDERING FOOTPRINT*.4 8X X X.256 SCALE 8: mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3
14 is a trademark of International Rectifier. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 632, Phoenix, Arizona USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan 535 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MC3464/D
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