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1 The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over dissipation they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to 5. V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1. A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4. kv of electrostatic discharge. The inputs may be driven directly from either TTL or CMOS (3. V to 18 V). In addition, 3 mv of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. Features Tough CMOS Construction High Peak Output Current (9. A) High Continuous Output Current (2. A Max) Fast Rise and Fall Times: 3 ns with 4,7 pf Load 18 ns with 47, pf Load Short Internal Delays (3 nsec Typ) Low Output Impedance (1.4 Ω Typ) Applications Line Drivers for Extra Heavily Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver PDIP 8 P SUFFIX CASE 626 TO 22 T SUFFIX CASE 314D PIN CONNECTIONS V DD 1 8 V DD INPUT NC GND 8 Pin Plastic DIP Pin TO 22 7 OUTPUT 6 OUTPUT 5 GND FUNCTIONAL BLOCK DIAGRAM INVERTING V DD Tab is common to V DD 3 mv OUTPUT INPUT GND VDD GND OUTPUT INPUT GND 4.7 V EFFECTIVE INPUT C = 2 pf NONINVERTING NCP4421/NCP4422 Inverting/Noninverting NOTE: Duplicate pins must both be connected for proper operation. NC = No connection ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 22 August, 22 Rev. 1 1 Publication Order Number: NCP4421/D
2 ABSOLUTE MAXIMUM RATINGS* Power Dissipation (T A 7 C) PDIP 5 Pin TO 22 Power Dissipation (T C 25 C) 5 Pin TO 22 (With Heat Sink) Derating Factors (To Ambient) PDIP 5 Pin TO 22 Rating Symbol Value Unit W 12.5 W mw/ C Thermal Impedance (To Case) 1 C/W 5 Pin TO 22 R θjc Storage Temperature T stg 65 to +15 C Operating Temperature (Chip) 15 C Operating Temperature (Ambient) TO 22 Version PDIP Version to +7 to +85 Lead Temperature (1 Seconds) 3 C Supply Voltage V CC 2 V Input Voltage V DD +3. to GND 5. Input Current (V IN V DD ) 5 ma *Static sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. C V ELECTRICAL CHARACTERISTICS (T A = 25 C with 4.5 V V DD 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit Input Logic 1 Input Voltage V IH V Logic Input Voltage V IL V Input Current V V IN V DD I IN 1 1 µa Output High Output Voltage See Figure 1 V OH V DD.25 V Low Output Voltage See Figure 1 V OL.25 V Output Resistance, High V DD = 18 V, I O = 1 ma R O 1.4 Ω Output Resistance, Low V DD = 18 V, I O = 1 ma R O Ω Peak Output Current V DD = 18 V I PK 9. A Continuous Output Current 1 V V DD 18 V, T C = 25 (TC4421/22 CAT only) I DC 2. A Latch Up Protection Duty Cycle 2% Withstand Reverse Current I REV 15 t 3 µs ma Switching Time (Note 1) Rise Time Figure 1, C L = 1, pf t R 6 75 nsec Fall Time Figure 1, C L = 1, pf t F 6 75 nsec Delay Time Figure 1 t D1 3 6 nsec Delay Time Figure 1 t D nsec 1. Switching times guaranteed by design. 2
3 ELECTRICAL CHARACTERISTICS (continued) (T A = 25 C with 4.5 V V DD 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit Power Supply Power Supply Current V IN = 3. V V IN = V I S ma µa Operating Input Voltage V DD V Input Logic 1 Input Voltage V IH 2.4 V Logic Input Voltage V IL.8 V Input Current V V IN V DD I IN 1 1 µa ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with 4.5 V V S 18 V unless otherwise specified.) Characteristics Test Conditions Symbol Min Typ Max Unit Input Logic 1 Input Voltage V IH 2.4 V Logic Input Voltage V IL.8 V Input Current V V IN V DD I IN 1 1 µa Output High Output Voltage See Figure 1 V OH V DD.25 V Low Output Voltage See Figure 1 V OL.25 V Output Resistance, High V DD = 18 V, I O = 1 ma R O W Output Resistance, Low V DD = 18 V, I O = 1 ma R O W Switching Time (Note 1) Rise Time Figure 1, C L = 1, pf t R 6 12 nsec Fall Time Figure 1, C L = 1, pf t F 6 12 nsec Delay Time Figure 1 t D1 5 8 nsec Delay Time Figure 1 t D nsec Power Supply Power Supply Current V IN = 3. V V IN = V I S ma Operating Input Voltage V DD V 1. Switching times guaranteed by design. 3
4 V DD = 18 V.1 µf µf.1 µf +5 V INPUT V +18 V 1% t D1 9% t F 9% t D2 t R 9% INPUT OUTPUT OUTPUT V 1% 1% NCP4421 C L = 25 pf INPUT: khz, square wave, t RISE = t FALL 1 ns 4 5 Figure 1. Switching Time Test Circuit 4
5 TYPICAL ELECTRICAL CHARACTERISTICS t RISE (ns) pf pf 47 pf pf t FALL (ns) pf 12 8 pf 6 47 pf 2 pf V DD V DD Figure 2. Rise Time vs. Supply Voltage Figure 3. Fall Time vs. Supply Voltage t RISE (ns) V 5 V 25 1 V 1 V 2 t FALL (ns) V 15 V 5 1 k 1 k k 1 k 1 k k C LOAD (pf) C LOAD (pf) Figure 4. Rise Time vs. Capacitive Load Figure 5. Fall Time vs. Capacitive Load 9 8 C LOAD = pf V DD = 15 V 5 45 C LOAD = pf TIME (ns) t RISE TIME (ns) 35 t D1 t D2 3 t FALL 8 12 T A ( C) Figure 6. Rise and Fall Times vs. Temperature V DD Figure 7. Propagation Delay vs. Supply Voltage 5
6 TYPICAL ELECTRICAL CHARACTERISTICS I SUPPLY (ma) MHz MHz 632 khz 2 khz 2 khz 63.2 khz 1 k 1 k k C LOAD (pf) Figure 8. Supply Current vs. Capacitive Load (V DD = 18 V) I SUPPLY (ma) µf 47 pf pf 22 pf 47 pf 1 1 k FREQUENCY (khz) 47 pf Figure 9. Supply Current vs. Frequency (V DD = 18 V) I SUPPLY (ma) MHz MHz 63.2 khz 2 khz I SUPPLY (ma) µf 22 pf pf 47 pf 47 pf khz 2 khz 2 47 pf 1 k 1 k k 1 1 k C LOAD (pf) FREQUENCY (khz) Figure 1. Supply Current vs. Capacitive Load (V DD = 12 V) Figure 11. Supply Current vs. Frequency (V DD = 12 V) I SUPPLY (ma) MHz 632 khz 63.2 khz 2 khz 2 khz pf 1 k 1 k k 1 1 k C LOAD (pf) FREQUENCY (khz) Figure 12. Supply Current vs. Capacitive Load (V DD = 6 V) I SUPPLY (ma) pf.1 µf 47 pf 22 pf pf Figure 13. Supply Current vs. Frequency (V DD = 6 V) 6
7 TIME (ns) NCP4421, NCP4422 TYPICAL ELECTRICAL CHARACTERISTICS V DD = 1 V C LOAD = pf t D2 5 t D2 3 t D1 3 t D INPUT (V) Figure 14. Propagation Delay vs. Input Amplitude TIME (ns) T A ( C) Figure 15. Propagation Delay vs. Temperature 1 6 NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by V DD = 18 V A sec 1 7 I QUIESCENT (µa) 1 2 INPUT = 1 INPUT = V DD T J ( C) Figure 16. Crossover Energy vs. Supply Voltage Figure 17. Quiescent Supply Current vs. Temperature R DS(ON) (Ω) T A = 25 C T J = 15 C R DS(ON) (Ω) T A = 25 C T J = 15 C V DD (V) V DD (V) Figure 18. High State Output Resistance vs. Supply Voltage Figure 19. Low State Output Resistance vs. Supply Voltage 7
8 MARKING DIAGRAMS NCP442x 9914XY CO NCP442x 9914XY CO x = 1 or 2 X = Assembly ID Code Y = Year CO = Country of Origin ORDERING INFORMATION Device Package Temperature Range Shipping NCP4421T 5 Pin TO 22 C to + 7 C 5 Units/Rail NCP4421P 8 Pin PDIP C to + 85 C 5 Units/Rail NCP4422T 5 Pin TO 22 C to + 7 C 5 Units/Rail NCP4422P 8 Pin PDIP C to + 85 C 5 Units/Rail 8
9 Notes 9
10 Notes 1
11 PACKAGE DIMENSIONS PDIP P SUFFIX CASE ISSUE K B NOTE 2 T H F A G C N D K L J M TO 22 T SUFFIX CASE 314D 4 ISSUE E Q B U K D 5 PL A G L E J H C T 11
12 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center Kamimeguro, Meguro ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 12 NCP4421/D
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PIN CONNECTIONS
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MMSZVT Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
ULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
NPN Silicon ON Semiconductor Preferred Device
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device Dissipation
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
Characteristic Symbol Max Unit P D 625 mw
Advance Information Integrated Relay/Solenoid Driver Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 625 mw at 3 V to 5 V Features Low
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
N-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
TC4421/TC A High-Speed MOSFET Drivers. General Description. Features. Applications. Package Types (1)
9A High-Speed MOSFET Drivers Features High Peak Output Current: 9A Wide Input Supply Voltage Operating Range: - 4.5V to 18V High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 3 ns with
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
N-Channel 700-V (D-S) MOSFET
AMN7P N-Channel 7-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed PRODUCT SUMMARY r DS(on) (Ω) ID (A) 7 @ V GS = V a VDS (V) Typical Applications:
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
TC4427 TC A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4426 GENERAL DESCRIPTION FEATURES
FEATURES High Peak Output Current....A Wide Operating Range....V to V High Capacitive Load Drive Capability... pf in nsec Short Delay Time... < nsec Typ. Consistent Delay Times With Changes in Supply Voltage
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MAXIMUM RATINGS (T A = +25 C, unless otherwise noted.) PIN CONNECTIONS
The LM324 series are low cost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply applications.
CMOS Micro-Power Comparator plus Voltage Follower
Freescale Semiconductor Technical Data Rev 2, 05/2005 CMOS Micro-Power Comparator plus Voltage Follower The is an analog building block consisting of a very-high input impedance comparator. The voltage