TC4421/TC A High-Speed MOSFET Drivers. General Description. Features. Applications. Package Types (1)

Transcription

1 9A High-Speed MOSFET Drivers Features High Peak Output Current: 9A Wide Input Supply Voltage Operating Range: - 4.5V to 18V High Continuous Output Current: 2A Max Fast Rise and Fall Times: - 3 ns with 4,7 pf Load - 18 ns with 47, pf Load Short Propagation Delays: 3 ns (typ) Low Supply Current: - With Logic 1 Input 2 µa (typ) - With Logic Input 55 µa (typ) Low Output Impedance: 1.4Ω (typ) Latch-Up Protected: Will Withstand 1.5A Output Reverse Current Input Will Withstand Negative Inputs Up To 5V Pin-Compatible with the TC442/TC4429 6A MOSFET Driver Space-saving 8-Pin 6x5 DFN Package Applications Line Drivers for Extra Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver General Description The TC4421/TC4422 are high-current buffer/drivers capable of driving large MOSFETs and IGBTs. These devices are essentially immune to any form of upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within their power and voltage ratings. These parts are not subject to damage or improper operation when up to 5V of ground bounce is present on their ground terminals. They can accept, without damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to 4 kv of electrostatic discharge. The TC4421/TC4422 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 3 mv of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. With both surface-mount and pin-through-hole packages and four operating temperature range offerings, the TC4421/22 family of 9A MOSFET drivers fit into most any application where high gate/line capacitance drive is required. Package Types (1) V DD INPUT NC GND 8-Pin PDIP/ TC4421 SOIC TC4421 TC TC4422 V DD V DD OUTPUT OUTPUT OUTPUT OUTPUT GND GND V DD INPUT NC GND 8-Pin DFN (2) TC TC TC4421 TC4422 V DD V DD OUTPUT OUTPUT OUTPUT OUTPUT GND GND 5-Pin TO-22 TC4421 TC4422 Tab is Common to V DD Note 1: Duplicate pins must both be connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated. INPUT GND V DD GND OUTPUT 24 Microchip Technology Inc. DS2142D-page 1

2 Functional Block Diagram V DD TC4421 Inverting 2 µa 3 mv Output Input 4.7V TC4422 Non-Inverting GND Effective Input C = 25 pf DS2142D-page 2 24 Microchip Technology Inc.

3 1. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Supply Voltage...+2V Input Voltage... (V DD +.3V) to (GND 5V) Input Current (V IN > V DD )... 5 ma Package Power Dissipation (T A 7 C) 5-Pin TO W DFN... Note 2 PDIP mw SOIC mw Package Power Dissipation (T A 25 C) 5-Pin TO-22 (With Heatsink) W Thermal Impedances (To Case) 5-Pin TO-22 R θj-c...1 C/W Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T A = +25 C with 4.5V V DD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage V IH V Logic, Low Input Voltage V IL V Input Current I IN 1 +1 µa V V IN V DD Output High Output Voltage V OH V DD.25 V DC TEST Low Output Voltage V OL.25 V DC TEST Output Resistance, High R OH 1.4 Ω I OUT = 1 ma, V DD = 18V Output Resistance, Low R OL Ω I OUT = 1 ma, V DD = 18V Peak Output Current I PK 9. A V DD = 18V Continuous Output Current I DC 2 A 1V V DD 18V, T A = +25 C (TC4421/TC4422 CAT only) (Note 3) Latch-Up Protection I REV >1.5 A Duty cycle 2%, t 3 µsec Withstand Reverse Current Switching Time (Note 1) Rise Time t R 6 75 ns Figure 4-1, C L = 1, pf Fall Time t F 6 75 ns Figure 4-1, C L = 1, pf Delay Time t D1 3 6 ns Figure 4-1 Delay Time t D ns Figure 4-1 Power Supply Power Supply Current I S ma µa V IN = 3V V IN = V Operating Input Voltage V DD V Note 1: Switching times ensured by design. 2: Package power dissipation is dependent on the copper pad area on the PCB. 3: Tested during characterization, not production tested. 24 Microchip Technology Inc. DS2142D-page 3

4 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V V DD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic 1, High Input Voltage V IH 2.4 V Logic, Low Input Voltage V IL.8 V Input Current I IN 1 +1 µa V V IN V DD Output High Output Voltage V OH V DD.25 V DC TEST Low Output Voltage V OL.25 V DC TEST Output Resistance, High R OH Ω I OUT = 1 ma, V DD = 18V Output Resistance, Low R OL Ω I OUT = 1 ma, V DD = 18V Switching Time (Note 1) Rise Time t R 6 12 ns Figure 4-1, C L = 1, pf Fall Time t F 6 12 ns Figure 4-1, C L = 1, pf Delay Time t D1 5 8 ns Figure 4-1 Delay Time t D ns Figure 4-1 Power Supply Power Supply Current I S TEMPERATURE CHARACTERISTICS 3.2 Operating Input Voltage V DD V Note 1: Switching times ensured by design. ma V IN = 3V V IN = V Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V V DD 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) T A +7 C Specified Temperature Range (E) T A C Specified Temperature Range (V) T A C Maximum Junction Temperature T J +15 C Storage Temperature Range T A C Package Thermal Resistances Thermal Resistance, 5L-TO-22 θ JA 71 C/W Thermal Resistance, 8L-6x5 DFN θ JA 33.2 C/W Typical 4-layer board with vias to ground plane Thermal Resistance, 8L-PDIP θ JA 125 C/W Thermal Resistance, 8L-SOIC θ JA 12 C/W DS2142D-page 4 24 Microchip Technology Inc.

5 2. TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T A = +25 C with 4.5V V DD 18V. t RISE (nsec) , pf , pf pf pf V DD (V) t FALL (nsec) , pf , pf 6 47 pf pf V DD (V) FIGURE 2-1: Voltage. Rise Time vs. Supply FIGURE 2-4: Voltage. Fall Time vs. Supply V 25 5V t RISE (nsec) V 15V t FALL (nsec) V 15V , 1, C LOAD (pf) FIGURE 2-2: Rise Time vs. Capacitive Load , 1, C LOAD (pf) FIGURE 2-5: Fall Time vs. Capacitive Load C LOAD = 1, pf V DD = 15V 45 C LOAD = 1 pf Time (nsec) t RISE t FALL Time (nsec) t D1 t D T A ( C) V DD (V) FIGURE 2-3: Temperature. Rise and Fall Times vs. FIGURE 2-6: Supply Voltage. Propagation Delay vs. 24 Microchip Technology Inc. DS2142D-page 5

6 Note: Unless otherwise indicated, T A = +25 C with 4.5V V DD 18V. I SUPPLY (ma) V DD = 18V 2 MHz MHz 63.2 khz 632 khz 2 khz 2 khz 1 1, 1, C LOAD (pf) FIGURE 2-7: Supply Current vs. Capacitive Load (V DD = 18V). I SUPPLY (ma) 18 V DD = 12V MHz khz MHz khz 2 khz 2 2 khz 1 1 1, 1, C LOAD (pf) FIGURE 2-8: Supply Current vs. Capacitive Load (V DD = 12V). I SUPPLY (ma) V DD = 6V 2 khz khz 3 2 MHz 632 khz khz 1 1 1, 1, C LOAD (pf) FIGURE 2-9: Supply Current vs. Capactive Load (V DD = 6V). I SUPPLY (ma) V DD = 18V 47, pf 22, pf 14 1, pf µf pf 2 47 pf Frequency (khz) FIGURE 2-1: Supply Current vs. Frequency (V DD = 18V). I SUPPLY (ma) 18 V DD = 12V 22, pf 16 1, pf 14 47, pf µf 47 pf 47 pf Frequency (khz) FIGURE 2-11: Supply Current vs. Frequency (V DD = 12V). I SUPPLY (ma) 12 V DD = 6V 47, pf 1 22, pf 8 1, pf 47 pf µf 2 47 pf Frequency (khz) FIGURE 2-12: Supply Current vs. Frequency (V DD = 6V). DS2142D-page 6 24 Microchip Technology Inc.

7 Note: Unless otherwise indicated, T A = +25 C with 4.5V V DD 18V. Time (nsec) V DD = 1V 1 C LOAD = 1, pf t D2 4 3 t D Input Amplitude (V) Time (nsec) V DD = 18V C LOAD = 1, pf V IN = 5V t D2 t D T A ( C) FIGURE 2-13: Amplitude. Propagation Delay vs. Input FIGURE 2-16: Temperature. Propagation Delay vs V DD = 18V A sec 1-7 I QUIESCENT (µa) 1 2 Input = 1 Input = NOTE: FIGURE 2-14: Supply Voltage. R DS(ON) (Ω) V DD (V) The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. T J = 25 C Crossover Energy vs. T J = 15 C V DD (V) FIGURE 2-15: High-State Output Resistance vs. Supply Voltage T J ( C) FIGURE 2-17: Quiescent Supply Current vs. Temperature. R DS(ON) (Ω) T J = 15 C T J = 25 C V DD (V) FIGURE 2-18: Low-State Output Resistance vs. Supply Voltage. 24 Microchip Technology Inc. DS2142D-page 7

8 3. PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. 8-Pin PDIP, SOIC Pin No. 8-Pin DFN Pin No. 5-Pin TO-22 Symbol Description 1 1 V DD Supply input, 4.5V to 18V INPUT Control input, TTL/CMOS compatible input 3 3 NC No connection GND Ground GND Ground OUTPUT CMOS push-pull output 7 7 OUTPUT CMOS push-pull output V DD Supply input, 4.5V to 18V PAD NC Exposed metal pad TAB V DD Metal tab is at the V DD potential 3.1 Supply Input (V DD ) The V DD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pin. The V DD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1. µf is suggested. 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS compatible input. The input also has 3 mv of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. 3.3 CMOS Push-Pull Output The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 9.A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 Ground The ground pins are the return path for the bias current and for the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. DS2142D-page 8 24 Microchip Technology Inc.

9 4. APPLICATIONS INFORMATION.1 µf Input V DD = 18V µf Input: 1 khz, square wave, t RISE = t FALL 1 nsec 4.7 µf Output C L = 1, pf +5V Input V +18V Output V +5V Input V +18V Output V 1% t D1 t F t D2 9% 9% 9% 1% 1% Inverting Driver TC4421 9% 1% t 9% 9% D1 t D2 t R t F 1% 1% t R Note: Pinout shown is for the DFN, PDIP and SOIC packages. Non-Inverting Driver TC4422 FIGURE 4-1: Switching Time Test Circuits. 24 Microchip Technology Inc. DS2142D-page 9

10 5. PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-22 Example: XXXXXXXXX XXXXXXXXX YYWWNNN TC4421CAT XXXXXXXXX Lead DFN Example: XXXXXXX XXXXXXX XXYYWW NNN TC4421 EMF Lead PDIP (3 mil) XXXXXXXX XXXXXNNN YYWW Example: TC4421 CPA Lead SOIC (28 mil) Example: XXXXXXXX XXXXXXXX YYWWNNN GTC4421 ESM Legend: XX...X Customer specific information* YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week 1 ) NNN Alphanumeric traceability code Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * Standard OTP marking consists of Microchip part number, year code, week code, and traceability code. DS2142D-page 1 24 Microchip Technology Inc.

11 5-Lead Plastic Transistor Outline (AT) (TO-22) L H1 Q b e1 e e3 E EJECTOR PIN ØP a (5X) J1 C1 D A F *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.1" (.254mm) per side. JEDEC equivalent: TO-22 Drawing No. C4-36 Units INCHES* MILLIMETERS Dimension Limits MIN MAX MIN MAX Lead Pitch e Overall Lead Centers e Space Between Leads e Overall Height A Overall Width E Overall Length D Flag Length H Flag Thickness F Through Hole Center Q Through Hole Diameter P Lead Length L Base to Bottom of Lead J Lead Thickness C Lead Width b Mold Draft Angle a Microchip Technology Inc. DS2142D-page 11

12 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) Saw Singulated DS2142D-page Microchip Technology Inc.

13 8-Lead Plastic Dual In-line (P) 3 mil (PDIP) E1 2 D n 1 α E A A2 c A1 L β eb B1 B p Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p Top to Seating Plane A Molded Package Thickness A Base to Seating Plane A Shoulder to Shoulder Width E Molded Package Width E Overall Length D Tip to Seating Plane L Lead Thickness c Upper Lead Width B Lower Lead Width B Overall Row Spacing eb Mold Draft Angle Top α Mold Draft Angle Bottom β * Controlling Parameter Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.1 (.254mm) per side. JEDEC Equivalent: MS-1 Drawing No. C Microchip Technology Inc. DS2142D-page 13

14 8-Lead Plastic Small Outline (SM) Medium, 28 mil Body (SOIJ) (JEITA/EIAJ Standard, Formerly called SOIC) E E1 p 2 D B n 1 α c A A2 β L φ A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p Overall Height A Molded Package Thickness A Standoff A Overall Width E Molded Package Width E Overall Length D Foot Length L Foot Angle φ Lead Thickness c Lead Width B Mold Draft Angle Top α Mold Draft Angle Bottom β *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed.1" (.254mm) per side. Drawing No. C4-56 DS2142D-page Microchip Technology Inc.

15 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX Device Temperature Range Package Device: TC4421: 9A High-Speed MOSFET Driver, Inverting TC4422: 9A High-Speed MOSFET Driver, Non-Inverting Temperature Range: C = C to +7 C (PDIP and TO-22 Only) E = -4 C to +85 C V = -4 C to +125 C Package: AT = TO-22, 5-lead (C-Temp Only) MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) PA = Plastic DIP (3 mil Body), 8-lead SM = Plastic SOIC (28 mil Body), 8-lead SM713 = Plastic SOIC (28 mil Body), 8-lead (Tape and Reel) PB Free G = Lead-Free device = Blank XXX Tape & Reel * Available on selected packages. Contact your local sales representative for availability X PB Free Examples: a) TC4421CAT: 9A High-Speed Inverting MOSFET Driver, TO-22 package, C to +7 C. b) TC4421ESMG: 9A High-Speed Inverting MOSFET Driver, PB Free SOIC package, -4 C to +85 C. c) TC4421VMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -4 C to +125 C. a) TC4422VPA: 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -4 C to +125 C. b) TC4422EPA: 9A High-Speed Non-Inverting MOSFET Driver, PDIP package, -4 C to +85 C. c) TC4422EMF: 9A High-Speed Inverting MOSFET Driver, DFN package, -4 C to +85 C. 24 Microchip Technology Inc. DS2142D-page 15